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JPS5582515A - Transistor amplifier - Google Patents

Transistor amplifier

Info

Publication number
JPS5582515A
JPS5582515A JP15582278A JP15582278A JPS5582515A JP S5582515 A JPS5582515 A JP S5582515A JP 15582278 A JP15582278 A JP 15582278A JP 15582278 A JP15582278 A JP 15582278A JP S5582515 A JPS5582515 A JP S5582515A
Authority
JP
Japan
Prior art keywords
capacitor
substrate
constitution
inductor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15582278A
Other languages
Japanese (ja)
Inventor
Shigekazu Hori
Naotaka Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15582278A priority Critical patent/JPS5582515A/en
Publication of JPS5582515A publication Critical patent/JPS5582515A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To simplify the constitution of the internal matching circuit at the output side, by forming the DC blocking capacitor on the high concentration substrate of transistor other than the active region by using the dielectric substance such as oxide film and metal electrodes. CONSTITUTION:The transistor active region 25 consisting of the emitter, base and collector is formed on the upper part of the N<+> substrate 24, the dielectric substances 26a, 26b such as oxide film are formed on a part of the upper part of the substrate 24 and the metal electrodes 27a, 27b are formed on its upper part. Accordingly, capacitor is constitution between the substrate 24 and the electrodes 27a, 27b. Further to use the capacitor as DC blocking, the inductor is connected to the ground conductor of the capacitor and the package. Thus, this inductor performs the same operation as the inductor in parallel connection with the output side.
JP15582278A 1978-12-19 1978-12-19 Transistor amplifier Pending JPS5582515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15582278A JPS5582515A (en) 1978-12-19 1978-12-19 Transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15582278A JPS5582515A (en) 1978-12-19 1978-12-19 Transistor amplifier

Publications (1)

Publication Number Publication Date
JPS5582515A true JPS5582515A (en) 1980-06-21

Family

ID=15614237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15582278A Pending JPS5582515A (en) 1978-12-19 1978-12-19 Transistor amplifier

Country Status (1)

Country Link
JP (1) JPS5582515A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791542A (en) * 1980-11-29 1982-06-07 Toshiba Corp High frequency transistor device
JP2015088975A (en) * 2013-10-31 2015-05-07 三菱電機株式会社 Amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791542A (en) * 1980-11-29 1982-06-07 Toshiba Corp High frequency transistor device
JP2015088975A (en) * 2013-10-31 2015-05-07 三菱電機株式会社 Amplifier

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