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JPS54114981A - Zener semiconductor device - Google Patents

Zener semiconductor device

Info

Publication number
JPS54114981A
JPS54114981A JP2266178A JP2266178A JPS54114981A JP S54114981 A JPS54114981 A JP S54114981A JP 2266178 A JP2266178 A JP 2266178A JP 2266178 A JP2266178 A JP 2266178A JP S54114981 A JPS54114981 A JP S54114981A
Authority
JP
Japan
Prior art keywords
capacitance
layer
semiconductor substrate
insulation film
ground terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2266178A
Other languages
Japanese (ja)
Inventor
Hiroo Wakaumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2266178A priority Critical patent/JPS54114981A/en
Publication of JPS54114981A publication Critical patent/JPS54114981A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE: To obtain stable Zener voltage, by increasing the load capacitance of common ground of the voltage constant device.
CONSTITUTION: The diffusion layer 14 of n+ manufactured in thermal diffusion process on a part of the semiconductor substrate 20, is connected to the ground terminal 13. At the boundary of the semiconductor substrate 20 beneath the insulation film 15', the inversion layer having the same potential as the diffusion layer 14 is formed, and the capacitance coupling due to the insulation film 15' is produced between the conductive layer 16 and the inversion layer. As a result, the pulsive inductive noise caused by the capacitance coupling between the bias electrodes is absorbed to the ground terminal 13 via the AC impedance smaller formed with the greater coupling capacitance.
COPYRIGHT: (C)1979,JPO&Japio
JP2266178A 1978-02-27 1978-02-27 Zener semiconductor device Pending JPS54114981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2266178A JPS54114981A (en) 1978-02-27 1978-02-27 Zener semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2266178A JPS54114981A (en) 1978-02-27 1978-02-27 Zener semiconductor device

Publications (1)

Publication Number Publication Date
JPS54114981A true JPS54114981A (en) 1979-09-07

Family

ID=12089022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2266178A Pending JPS54114981A (en) 1978-02-27 1978-02-27 Zener semiconductor device

Country Status (1)

Country Link
JP (1) JPS54114981A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225661A (en) * 1982-06-23 1983-12-27 Hitachi Ltd Time constant element of integrated circuit
JPS5965997A (en) * 1982-10-06 1984-04-14 Matsushita Electronics Corp Semiconductor storage device
JP2014211882A (en) * 2009-01-16 2014-11-13 株式会社半導体エネルギー研究所 Bias circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284987A (en) * 1976-01-07 1977-07-14 Hitachi Ltd Voltage dividing circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284987A (en) * 1976-01-07 1977-07-14 Hitachi Ltd Voltage dividing circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225661A (en) * 1982-06-23 1983-12-27 Hitachi Ltd Time constant element of integrated circuit
JPS5965997A (en) * 1982-10-06 1984-04-14 Matsushita Electronics Corp Semiconductor storage device
JP2014211882A (en) * 2009-01-16 2014-11-13 株式会社半導体エネルギー研究所 Bias circuit
US9092042B2 (en) 2009-01-16 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Regulator circuit and RFID tag including the same

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