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JPS5582459A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5582459A
JPS5582459A JP15582178A JP15582178A JPS5582459A JP S5582459 A JPS5582459 A JP S5582459A JP 15582178 A JP15582178 A JP 15582178A JP 15582178 A JP15582178 A JP 15582178A JP S5582459 A JPS5582459 A JP S5582459A
Authority
JP
Japan
Prior art keywords
dielectrics
metallic
transistor
condenser
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15582178A
Other languages
Japanese (ja)
Inventor
Shigekazu Hori
Naotaka Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15582178A priority Critical patent/JPS5582459A/en
Publication of JPS5582459A publication Critical patent/JPS5582459A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To simplify the constitution of external matching circuits, by forming a condenser on a substrate with high concentration except the active regions of a bipolar or field-effect transistor by means of dielectrics and metallic electrodes, and by connecting a transistor electrode an condenser electrodes.
CONSTITUTION: In a bipolar transistor in a shape that bases are earthed, dielectrics 17, such as, oxide films, etc. are made up on a n+ or p+ substrate 13 except active regions 14, which consist of emitters, bases and collectors mounted onto the substrate 13, and metallic films 18 are further built up on the upper portions, and the condenser electrodes 18 and a base electrode 16 of the transistor are connected by means of a metallic film 19. According to such constitution, this structure becomes equivalent to an impedance circuit containing a condenser 21 formed by means of the metallic films 18 and the dielectrics 17 and an inductor 20 by the metallic electrode 19 on the dielectrics 17, and an external matching circuit can be simplified by optimally selecting the inductance of the inductor 20.
COPYRIGHT: (C)1980,JPO&Japio
JP15582178A 1978-12-19 1978-12-19 Transistor Pending JPS5582459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15582178A JPS5582459A (en) 1978-12-19 1978-12-19 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15582178A JPS5582459A (en) 1978-12-19 1978-12-19 Transistor

Publications (1)

Publication Number Publication Date
JPS5582459A true JPS5582459A (en) 1980-06-21

Family

ID=15614213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15582178A Pending JPS5582459A (en) 1978-12-19 1978-12-19 Transistor

Country Status (1)

Country Link
JP (1) JPS5582459A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175155A (en) * 1983-03-25 1984-10-03 Toshiba Corp Circuit substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175155A (en) * 1983-03-25 1984-10-03 Toshiba Corp Circuit substrate

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