JPS5580318A - Electron-beam exposure - Google Patents
Electron-beam exposureInfo
- Publication number
- JPS5580318A JPS5580318A JP15455578A JP15455578A JPS5580318A JP S5580318 A JPS5580318 A JP S5580318A JP 15455578 A JP15455578 A JP 15455578A JP 15455578 A JP15455578 A JP 15455578A JP S5580318 A JPS5580318 A JP S5580318A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- amount
- decreased
- width
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Beam Exposure (AREA)
Abstract
PURPOSE: To prevent a film from expansion and shrinkage after development and to obtain a fine pattern, by varying the amount of dose of an electron beam or the width of the pattern described by the beam depending on the thickness of a resist film caused by the concave and convex portions of a substrate.
CONSTITUTION: In obtaining a pattern with a uniform width by eliminating swelling and thinning of the pattern caused by the concave and convex portions of the foundation, at first, a negative resist film is applied on the foundation. Then, the amount of does or the width of the mask pattern are varied depending on the film thickness. If the amount of dose is decreased, the absorption energy is decreased, the developing surface retreats, and the swelling of the pattern can be prevented. That is to say, at the portion with a thickness of 2μm, the amount of does is decreased by ΔD; and at the portion which is in the vicinity of a step portion 7 and whose thickness is thin, the amount of does is increased by ΔD'. Or, the pattern width which is described by an electron beam may be decreased at the swelling portion and increased at the thinning portion.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15455578A JPS5580318A (en) | 1978-12-12 | 1978-12-12 | Electron-beam exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15455578A JPS5580318A (en) | 1978-12-12 | 1978-12-12 | Electron-beam exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5580318A true JPS5580318A (en) | 1980-06-17 |
Family
ID=15586803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15455578A Pending JPS5580318A (en) | 1978-12-12 | 1978-12-12 | Electron-beam exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5580318A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842229A (en) * | 1981-09-07 | 1983-03-11 | Fujitsu Ltd | Resist pattern forming method |
| EP0165055A2 (en) * | 1984-06-14 | 1985-12-18 | Microelectronics Center of North Carolina | Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge |
| WO2022138079A1 (en) * | 2020-12-21 | 2022-06-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Drawing device, drawing system, and drawing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5254377A (en) * | 1975-10-30 | 1977-05-02 | Toshiba Corp | Electron beam exposure method |
| JPS52119078A (en) * | 1976-03-31 | 1977-10-06 | Fujitsu Ltd | Field-junction electron beam expoure device |
-
1978
- 1978-12-12 JP JP15455578A patent/JPS5580318A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5254377A (en) * | 1975-10-30 | 1977-05-02 | Toshiba Corp | Electron beam exposure method |
| JPS52119078A (en) * | 1976-03-31 | 1977-10-06 | Fujitsu Ltd | Field-junction electron beam expoure device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842229A (en) * | 1981-09-07 | 1983-03-11 | Fujitsu Ltd | Resist pattern forming method |
| JPH0336291B2 (en) * | 1981-09-07 | 1991-05-31 | Fujitsu Ltd | |
| EP0165055A2 (en) * | 1984-06-14 | 1985-12-18 | Microelectronics Center of North Carolina | Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge |
| WO2022138079A1 (en) * | 2020-12-21 | 2022-06-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Drawing device, drawing system, and drawing method |
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