[go: up one dir, main page]

JPS53135578A - Mark protection method - Google Patents

Mark protection method

Info

Publication number
JPS53135578A
JPS53135578A JP5051677A JP5051677A JPS53135578A JP S53135578 A JPS53135578 A JP S53135578A JP 5051677 A JP5051677 A JP 5051677A JP 5051677 A JP5051677 A JP 5051677A JP S53135578 A JPS53135578 A JP S53135578A
Authority
JP
Japan
Prior art keywords
mark
exposure
protection method
section
mark protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5051677A
Other languages
Japanese (ja)
Other versions
JPS5538052B2 (en
Inventor
Seigo Igaki
Masahiro Okabe
Noriaki Nakayama
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5051677A priority Critical patent/JPS53135578A/en
Publication of JPS53135578A publication Critical patent/JPS53135578A/en
Publication of JPS5538052B2 publication Critical patent/JPS5538052B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To avoid the distorted mark, by coating the resist film on the substrate where the mark is formed, by performing the over-exposure for the mark section and the painting-out exposure and the soaking exposure for the region in contact with the mark section, so that only the resist for the over-exposure section is left by development, where the metallic mask is provided.
COPYRIGHT: (C)1978,JPO&Japio
JP5051677A 1977-04-30 1977-04-30 Mark protection method Granted JPS53135578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5051677A JPS53135578A (en) 1977-04-30 1977-04-30 Mark protection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5051677A JPS53135578A (en) 1977-04-30 1977-04-30 Mark protection method

Publications (2)

Publication Number Publication Date
JPS53135578A true JPS53135578A (en) 1978-11-27
JPS5538052B2 JPS5538052B2 (en) 1980-10-02

Family

ID=12861127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5051677A Granted JPS53135578A (en) 1977-04-30 1977-04-30 Mark protection method

Country Status (1)

Country Link
JP (1) JPS53135578A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795627A (en) * 1980-12-05 1982-06-14 Nippon Telegr & Teleph Corp <Ntt> Method for arranging mark in electron beam exposure
JPS57184222A (en) * 1981-05-08 1982-11-12 Nec Corp Preserving method for stacking mark
JPS57186334A (en) * 1981-05-04 1982-11-16 Fairchild Camera Instr Co Matching mark in electron beam drawing system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795627A (en) * 1980-12-05 1982-06-14 Nippon Telegr & Teleph Corp <Ntt> Method for arranging mark in electron beam exposure
JPS57186334A (en) * 1981-05-04 1982-11-16 Fairchild Camera Instr Co Matching mark in electron beam drawing system
JPH0363207B2 (en) * 1981-05-04 1991-09-30 Fueachairudo Kamera Endo Insutsurumento Corp
JPS57184222A (en) * 1981-05-08 1982-11-12 Nec Corp Preserving method for stacking mark

Also Published As

Publication number Publication date
JPS5538052B2 (en) 1980-10-02

Similar Documents

Publication Publication Date Title
JPS5339075A (en) Step and repeat exposure method of masks
JPS53135578A (en) Mark protection method
JPS52119185A (en) Electron beam exposure equipment
JPS52139375A (en) Mask for x-ray exposure
JPS5431282A (en) Pattern formation method
JPS5389673A (en) Fine pattern forming method of semiconductor device
JPS5380168A (en) Exposure method for electronic beam
JPS52117077A (en) Electron beam-exposing method
JPS53117385A (en) Exposure mask for patterning
JPS52143772A (en) Alignment method of masks using special reference marks
JPS5387668A (en) Forming method of patterns
JPS5421272A (en) Metal photo mask
JPS5429975A (en) Photo mask
JPS53105982A (en) Micropattern formation method
JPS52152171A (en) Wafer alignment method
JPS5432978A (en) Correcting method for pattern
JPS5255381A (en) Photo exposure method
JPS5381079A (en) Mask forming method
JPS5255866A (en) Etching method
JPS5422155A (en) Manufacture of correction filter for exposure device
JPS545659A (en) Manufacture of semiconductor device
JPS5255867A (en) Exposure method
JPS53108773A (en) Production of semiconductor device
JPS53114676A (en) Electron beam exposure method
JPS533821A (en) Exposure method