JPS5571034A - Measuring method for resistance distribution of compound semiconductor single crystal - Google Patents
Measuring method for resistance distribution of compound semiconductor single crystalInfo
- Publication number
- JPS5571034A JPS5571034A JP14459878A JP14459878A JPS5571034A JP S5571034 A JPS5571034 A JP S5571034A JP 14459878 A JP14459878 A JP 14459878A JP 14459878 A JP14459878 A JP 14459878A JP S5571034 A JPS5571034 A JP S5571034A
- Authority
- JP
- Japan
- Prior art keywords
- probes
- wafer
- compound semiconductor
- single crystal
- contacted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000523 sample Substances 0.000 abstract 5
- 239000002826 coolant Substances 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 2
Landscapes
- Measurement Of Resistance Or Impedance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To effect measurement simple and high in reliability on a compound semiconductor single srystal for resistance distribution by a method whrerin said single crystal wafer is soaked in a coolant, at least two pieces of probes are contacted with the wafer surface at given intervals under a constant pressure, and then current is carried between the probes.
CONSTITUTION: A compound semiconductor single crystal wafer 14 is soaked in a coolant 15. Next, at least two pieces of probes 19a, 19b are contacted with the surface of the wafer 14 at given intervals under a constant pressure. Then, a current is carried between lead wires 20a, 20b from an external supply to measure resistance between portion of the wafer 14 with which the probes 19a, 19b are contacted. After the first measurment for resistance is over, the probes 19a, 19b are moved upward by operating a slide shaft 23 to slide to a given spot, they are again contacted with the wafer 14 to a measurement of resistance values as described above.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14459878A JPS5571034A (en) | 1978-11-22 | 1978-11-22 | Measuring method for resistance distribution of compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14459878A JPS5571034A (en) | 1978-11-22 | 1978-11-22 | Measuring method for resistance distribution of compound semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5571034A true JPS5571034A (en) | 1980-05-28 |
Family
ID=15365765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14459878A Pending JPS5571034A (en) | 1978-11-22 | 1978-11-22 | Measuring method for resistance distribution of compound semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5571034A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141865U (en) * | 1982-03-19 | 1983-09-24 | 富士通株式会社 | Resistance measuring device for conductive paint film |
| CN102156222A (en) * | 2011-04-01 | 2011-08-17 | 宁波大学 | Stress resistance effect measuring method for material in high strain rate state |
| CN104251935A (en) * | 2013-06-26 | 2014-12-31 | 中芯国际集成电路制造(上海)有限公司 | Apparatus and method for measuring resistivity of wafers |
| CN111103525A (en) * | 2019-12-26 | 2020-05-05 | 奥士康科技股份有限公司 | Method for quickly finding point of abnormal resistance value of carbon wire |
-
1978
- 1978-11-22 JP JP14459878A patent/JPS5571034A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141865U (en) * | 1982-03-19 | 1983-09-24 | 富士通株式会社 | Resistance measuring device for conductive paint film |
| CN102156222A (en) * | 2011-04-01 | 2011-08-17 | 宁波大学 | Stress resistance effect measuring method for material in high strain rate state |
| CN104251935A (en) * | 2013-06-26 | 2014-12-31 | 中芯国际集成电路制造(上海)有限公司 | Apparatus and method for measuring resistivity of wafers |
| CN111103525A (en) * | 2019-12-26 | 2020-05-05 | 奥士康科技股份有限公司 | Method for quickly finding point of abnormal resistance value of carbon wire |
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