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JPS5565428A - Direct formation of thin film pattern - Google Patents

Direct formation of thin film pattern

Info

Publication number
JPS5565428A
JPS5565428A JP13783778A JP13783778A JPS5565428A JP S5565428 A JPS5565428 A JP S5565428A JP 13783778 A JP13783778 A JP 13783778A JP 13783778 A JP13783778 A JP 13783778A JP S5565428 A JPS5565428 A JP S5565428A
Authority
JP
Japan
Prior art keywords
substrate
thin film
film pattern
carrier gas
volatile compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13783778A
Other languages
Japanese (ja)
Inventor
Akihiko Kuroiwa
Mikio Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP13783778A priority Critical patent/JPS5565428A/en
Publication of JPS5565428A publication Critical patent/JPS5565428A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a thin film pattern on the substrate exactly same as what has been formed on the substrate after light irradiation by irradiating light of size and shape required on the substrate when gasifying a volatile compound and when sending it to the substrate by mixing it with a carrier gas.
CONSTITUTION: A susceptor 4 is arranged in a horizontal type reaction chamber 3 having a cross section required, and a silicon substrate 1 is fixed on the susceptor 4. Diborane and phosphine as a volatile compound, and H2 as a carrier gas are used. After mixing the volatile compound with H2 as a carrier gas, the mixture is sent to the reaction chamber 3 from the direction of an arrow at the flowing ratio required. At this time, a laser beam 2 with the wave length required is vertically irradiated on the substrate 1; the beam of the size and shape required is irradiated on the substrate to form the thin film pattern exactly same as what has been formed after light irradiation.
COPYRIGHT: (C)1980,JPO&Japio
JP13783778A 1978-11-10 1978-11-10 Direct formation of thin film pattern Pending JPS5565428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13783778A JPS5565428A (en) 1978-11-10 1978-11-10 Direct formation of thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13783778A JPS5565428A (en) 1978-11-10 1978-11-10 Direct formation of thin film pattern

Publications (1)

Publication Number Publication Date
JPS5565428A true JPS5565428A (en) 1980-05-16

Family

ID=15207978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13783778A Pending JPS5565428A (en) 1978-11-10 1978-11-10 Direct formation of thin film pattern

Country Status (1)

Country Link
JP (1) JPS5565428A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59140366A (en) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol Method and device for producing thin film
JPS59140369A (en) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol Method and device for producing thin film
JPS59163831A (en) * 1983-03-09 1984-09-14 Fujitsu Ltd Manufacture of semiconductor device and manufacturing apparatus therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499589A (en) * 1972-03-23 1974-01-28
JPS49111585A (en) * 1973-02-23 1974-10-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499589A (en) * 1972-03-23 1974-01-28
JPS49111585A (en) * 1973-02-23 1974-10-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163831A (en) * 1983-03-09 1984-09-14 Fujitsu Ltd Manufacture of semiconductor device and manufacturing apparatus therefor
JPS59140366A (en) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol Method and device for producing thin film
JPS59140369A (en) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol Method and device for producing thin film

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