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JPS5546520A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5546520A
JPS5546520A JP11921178A JP11921178A JPS5546520A JP S5546520 A JPS5546520 A JP S5546520A JP 11921178 A JP11921178 A JP 11921178A JP 11921178 A JP11921178 A JP 11921178A JP S5546520 A JPS5546520 A JP S5546520A
Authority
JP
Japan
Prior art keywords
layer
film
flattened
becomes
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11921178A
Other languages
Japanese (ja)
Other versions
JPS6327857B2 (en
Inventor
Sunao Shibata
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11921178A priority Critical patent/JPS5546520A/en
Priority to US06/077,272 priority patent/US4267011A/en
Publication of JPS5546520A publication Critical patent/JPS5546520A/en
Publication of JPS6327857B2 publication Critical patent/JPS6327857B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To enable accurate etching in accordance with a resist pattern, by irradiating laser light upon a polysilicon layer, which becomes an electrode or a wiring, so that the surface of the layer is flattened.
CONSTITUTION: A field oxide film 12 and another oxide film 13, which becomes a gate oxide film, are produced on a substrate 11. A polysilicon layer 14 is produced on the films 12, 13. Laser light 30 is irradiated upon the layer 14. A photoresist film 15 is selectively made on the layer 14. The layer 14 is etched so that it is patterned and a polysilicon which becomes a gate electrode and a wiring is left. At that time, the layer 14 is flattened. Therefore, optional patterning can be effected. The film 13 is partly removed, thereby providing a source region 16 and a drain region 17. At that time, an impurity for making regions 16, 17 is not diffused to the substrate 11 through the polysilicon layer 14 and the film 13 because the layer 14 is flattened.
COPYRIGHT: (C)1980,JPO&Japio
JP11921178A 1978-09-29 1978-09-29 Method of manufacturing semiconductor device Granted JPS5546520A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11921178A JPS5546520A (en) 1978-09-29 1978-09-29 Method of manufacturing semiconductor device
US06/077,272 US4267011A (en) 1978-09-29 1979-09-20 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11921178A JPS5546520A (en) 1978-09-29 1978-09-29 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5546520A true JPS5546520A (en) 1980-04-01
JPS6327857B2 JPS6327857B2 (en) 1988-06-06

Family

ID=14755679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11921178A Granted JPS5546520A (en) 1978-09-29 1978-09-29 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5546520A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120058713A1 (en) * 2009-04-15 2012-03-08 Lee Shura Method for construction, strengthening and homogenization of a wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085874A (en) * 1973-12-03 1975-07-10
JPS5328385A (en) * 1976-08-27 1978-03-16 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085874A (en) * 1973-12-03 1975-07-10
JPS5328385A (en) * 1976-08-27 1978-03-16 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120058713A1 (en) * 2009-04-15 2012-03-08 Lee Shura Method for construction, strengthening and homogenization of a wafer

Also Published As

Publication number Publication date
JPS6327857B2 (en) 1988-06-06

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