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JPS5543847A - Forming method of multilayer interconnection - Google Patents

Forming method of multilayer interconnection

Info

Publication number
JPS5543847A
JPS5543847A JP11653178A JP11653178A JPS5543847A JP S5543847 A JPS5543847 A JP S5543847A JP 11653178 A JP11653178 A JP 11653178A JP 11653178 A JP11653178 A JP 11653178A JP S5543847 A JPS5543847 A JP S5543847A
Authority
JP
Japan
Prior art keywords
layer
wiring
insulating film
polysilicon
widths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11653178A
Other languages
Japanese (ja)
Inventor
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11653178A priority Critical patent/JPS5543847A/en
Publication of JPS5543847A publication Critical patent/JPS5543847A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To flatten the contact zone of a multilayer interconnection, stabilize a semiconductor device for contamination and also to obtain a higher integration by applying liquid galss with polysilicon layer of the lower wiring open sufficiently around.
CONSTITUTION: In a semiconductor device with a field insulating film 2 by Si oxide, a gate insulating film 9, a polysilicon gate 10, a diffusion wiring layer 11, a polysilicon wiring 3 and a layer insulating film 4 consisting of PSG formed on a main surface of Si crystal plate 1, there is perforated a contact hole 6 which exposes a contact zone of the wiring 3 and the layer 11, and widths D1, D2 of the contact hole are formed larger than widths d1, d2 of the wiring 3 and the layer 11. Next, layers 12a, 12b are formed by applying a liquid glass according to rotational application process. Only the thin glass layer is then removed through etching, and thus the thick glass layer 12a remains.
COPYRIGHT: (C)1980,JPO&Japio
JP11653178A 1978-09-25 1978-09-25 Forming method of multilayer interconnection Pending JPS5543847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11653178A JPS5543847A (en) 1978-09-25 1978-09-25 Forming method of multilayer interconnection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11653178A JPS5543847A (en) 1978-09-25 1978-09-25 Forming method of multilayer interconnection

Publications (1)

Publication Number Publication Date
JPS5543847A true JPS5543847A (en) 1980-03-27

Family

ID=14689422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11653178A Pending JPS5543847A (en) 1978-09-25 1978-09-25 Forming method of multilayer interconnection

Country Status (1)

Country Link
JP (1) JPS5543847A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031243A (en) * 1983-08-01 1985-02-18 Nec Corp Semiconductor device
JPS62247549A (en) * 1986-04-18 1987-10-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JP2011192662A (en) * 2010-03-03 2011-09-29 Napura:Kk Substrate for electronic device and electronic device
US8415784B2 (en) 2009-06-02 2013-04-09 Napra Co., Ltd. Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031243A (en) * 1983-08-01 1985-02-18 Nec Corp Semiconductor device
JPH0226375B2 (en) * 1983-08-01 1990-06-08 Nippon Electric Co
JPS62247549A (en) * 1986-04-18 1987-10-28 Mitsubishi Electric Corp Manufacture of semiconductor device
US8415784B2 (en) 2009-06-02 2013-04-09 Napra Co., Ltd. Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method
US8759211B2 (en) 2009-06-02 2014-06-24 Napra Co., Ltd. Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method
JP2011192662A (en) * 2010-03-03 2011-09-29 Napura:Kk Substrate for electronic device and electronic device

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