JPS5543847A - Forming method of multilayer interconnection - Google Patents
Forming method of multilayer interconnectionInfo
- Publication number
- JPS5543847A JPS5543847A JP11653178A JP11653178A JPS5543847A JP S5543847 A JPS5543847 A JP S5543847A JP 11653178 A JP11653178 A JP 11653178A JP 11653178 A JP11653178 A JP 11653178A JP S5543847 A JPS5543847 A JP S5543847A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- insulating film
- polysilicon
- widths
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To flatten the contact zone of a multilayer interconnection, stabilize a semiconductor device for contamination and also to obtain a higher integration by applying liquid galss with polysilicon layer of the lower wiring open sufficiently around.
CONSTITUTION: In a semiconductor device with a field insulating film 2 by Si oxide, a gate insulating film 9, a polysilicon gate 10, a diffusion wiring layer 11, a polysilicon wiring 3 and a layer insulating film 4 consisting of PSG formed on a main surface of Si crystal plate 1, there is perforated a contact hole 6 which exposes a contact zone of the wiring 3 and the layer 11, and widths D1, D2 of the contact hole are formed larger than widths d1, d2 of the wiring 3 and the layer 11. Next, layers 12a, 12b are formed by applying a liquid glass according to rotational application process. Only the thin glass layer is then removed through etching, and thus the thick glass layer 12a remains.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11653178A JPS5543847A (en) | 1978-09-25 | 1978-09-25 | Forming method of multilayer interconnection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11653178A JPS5543847A (en) | 1978-09-25 | 1978-09-25 | Forming method of multilayer interconnection |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5543847A true JPS5543847A (en) | 1980-03-27 |
Family
ID=14689422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11653178A Pending JPS5543847A (en) | 1978-09-25 | 1978-09-25 | Forming method of multilayer interconnection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543847A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6031243A (en) * | 1983-08-01 | 1985-02-18 | Nec Corp | Semiconductor device |
JPS62247549A (en) * | 1986-04-18 | 1987-10-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JP2011192662A (en) * | 2010-03-03 | 2011-09-29 | Napura:Kk | Substrate for electronic device and electronic device |
US8415784B2 (en) | 2009-06-02 | 2013-04-09 | Napra Co., Ltd. | Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method |
-
1978
- 1978-09-25 JP JP11653178A patent/JPS5543847A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6031243A (en) * | 1983-08-01 | 1985-02-18 | Nec Corp | Semiconductor device |
JPH0226375B2 (en) * | 1983-08-01 | 1990-06-08 | Nippon Electric Co | |
JPS62247549A (en) * | 1986-04-18 | 1987-10-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US8415784B2 (en) | 2009-06-02 | 2013-04-09 | Napra Co., Ltd. | Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method |
US8759211B2 (en) | 2009-06-02 | 2014-06-24 | Napra Co., Ltd. | Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method |
JP2011192662A (en) * | 2010-03-03 | 2011-09-29 | Napura:Kk | Substrate for electronic device and electronic device |
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