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JPS5529110A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5529110A
JPS5529110A JP10178278A JP10178278A JPS5529110A JP S5529110 A JPS5529110 A JP S5529110A JP 10178278 A JP10178278 A JP 10178278A JP 10178278 A JP10178278 A JP 10178278A JP S5529110 A JPS5529110 A JP S5529110A
Authority
JP
Japan
Prior art keywords
layer
oxide film
mask
film
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10178278A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10178278A priority Critical patent/JPS5529110A/en
Publication of JPS5529110A publication Critical patent/JPS5529110A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To build a field oxide film by combining the technique of mask evaporating poly Si and the one which selectively oxidizing a Si layer at low temperatures.
CONSTITUTION: After placing PSG film 14 on the SiO2 film 12 of a p--Si substrate, a disfigurement UD is made by etching the film 14 with a resist mask 16. Then p+ channel preventive layer 18 is built by injecting B ions, and the mask 16 is removed by coating poly Si 22A at low temperatures. If a mask 14 is removed and wetly oxidized at about 750°C while increasing the oxidizing speed by adding P to the layer 22A, which changes in quality to SiO2 where a thick field oxide film 24B is formed without re-diffusion of p+-layer, thus SiO2 12 prevents the P of the layer 22A from diffusing. A gate oxide film 24b is newly built up, and IGFET is also formed according to the normal method. In this method, a field oxide film with a smooth edge can be obtained while preventing disconnection as well as re-diffusion of the B within the layer 18 by oxidation at low temperatures, and therefore the source drain does not overlap the layer 18, thus improving resisting pressure, at the same time, reducing parasitic capacity.
COPYRIGHT: (C)1980,JPO&Japio
JP10178278A 1978-08-23 1978-08-23 Manufacturing of semiconductor device Pending JPS5529110A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10178278A JPS5529110A (en) 1978-08-23 1978-08-23 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10178278A JPS5529110A (en) 1978-08-23 1978-08-23 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529110A true JPS5529110A (en) 1980-03-01

Family

ID=14309752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10178278A Pending JPS5529110A (en) 1978-08-23 1978-08-23 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529110A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52134380A (en) * 1976-05-06 1977-11-10 Nippon Telegr & Teleph Corp <Ntt> Production of mis type semiconductor circuits
JPS5320775A (en) * 1976-08-10 1978-02-25 Toshiba Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52134380A (en) * 1976-05-06 1977-11-10 Nippon Telegr & Teleph Corp <Ntt> Production of mis type semiconductor circuits
JPS5320775A (en) * 1976-08-10 1978-02-25 Toshiba Corp Production of semiconductor device

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