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JPS5518023A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS5518023A
JPS5518023A JP9049678A JP9049678A JPS5518023A JP S5518023 A JPS5518023 A JP S5518023A JP 9049678 A JP9049678 A JP 9049678A JP 9049678 A JP9049678 A JP 9049678A JP S5518023 A JPS5518023 A JP S5518023A
Authority
JP
Japan
Prior art keywords
layer
separated
layers
selectively
selectively opened
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9049678A
Other languages
Japanese (ja)
Other versions
JPS6149824B2 (en
Inventor
Mitsuru Ogawa
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9049678A priority Critical patent/JPS5518023A/en
Priority to DE19792927824 priority patent/DE2927824A1/en
Priority to US06/056,239 priority patent/US4348804A/en
Publication of JPS5518023A publication Critical patent/JPS5518023A/en
Publication of JPS6149824B2 publication Critical patent/JPS6149824B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To encircle a semiconductor under an extension os an insulating gate electrode by a linear dielectric separation layer along the peripheral edge of the extension part to reduce the capacity coupling thereby to prevent short-circuiting or the like. CONSTITUTION:A P-type Si semiconductor layer 2 is formed on a saphire substrate 1 and SiO27 is prepared selectively by a two-layer mask of SiO2 and Si3N4, and the layer 2 is separated. By removing the mask, the layer 2 is covered with SiO28, and selectively opened and a polysilicon membrane 10 is laminated thereon. Then, the membrane 10 is selectively opened to be separated into a plurality of members 10a to 10d, and P diffusion is carried at high concentration and n' layers 21b and 22b are fabricated through a layer 10 on a layer 8 to make the layer conductive. Then, SiO213 is applied on the layer 10, and selectively opened to expose a p layer 2a, layers 10d, 10e and 10f. Then, an Al layer 16 is applied on the layer 13, and selectively etched to be separated into layers 16a through 16u. According to this organization, p-type layer is mutually separated by the insulating layer 7, and hence any fault in the circuit device can be prevented and undesired electrical coupling can be also prevented.
JP9049678A 1978-07-12 1978-07-26 Semiconductor device and method of fabricating the same Granted JPS5518023A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9049678A JPS5518023A (en) 1978-07-26 1978-07-26 Semiconductor device and method of fabricating the same
DE19792927824 DE2927824A1 (en) 1978-07-12 1979-07-10 SEMICONDUCTOR DEVICES AND THEIR PRODUCTION
US06/056,239 US4348804A (en) 1978-07-12 1979-07-10 Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9049678A JPS5518023A (en) 1978-07-26 1978-07-26 Semiconductor device and method of fabricating the same

Publications (2)

Publication Number Publication Date
JPS5518023A true JPS5518023A (en) 1980-02-07
JPS6149824B2 JPS6149824B2 (en) 1986-10-31

Family

ID=14000107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9049678A Granted JPS5518023A (en) 1978-07-12 1978-07-26 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5518023A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171864A (en) * 1982-03-31 1983-10-08 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171864A (en) * 1982-03-31 1983-10-08 Fujitsu Ltd Semiconductor device
JPH0547993B2 (en) * 1982-03-31 1993-07-20 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6149824B2 (en) 1986-10-31

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