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JPS55153387A - Composite semiconductor laser device - Google Patents

Composite semiconductor laser device

Info

Publication number
JPS55153387A
JPS55153387A JP6199679A JP6199679A JPS55153387A JP S55153387 A JPS55153387 A JP S55153387A JP 6199679 A JP6199679 A JP 6199679A JP 6199679 A JP6199679 A JP 6199679A JP S55153387 A JPS55153387 A JP S55153387A
Authority
JP
Japan
Prior art keywords
reflection means
light
composite layers
layers
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6199679A
Other languages
Japanese (ja)
Inventor
Shigeo Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6199679A priority Critical patent/JPS55153387A/en
Priority to US06/142,743 priority patent/US4318058A/en
Publication of JPS55153387A publication Critical patent/JPS55153387A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To extract many lights varied in the wavelength on the single axis by varying the band gap energy of the respective region areas from each other with the first to third reflection means adapted to reflect light in different directions provided in plural active region layers parallel with each other on the semiconductor substrate. CONSTITUTION:Composite layers 2-5 are formed on the surface of the GaAs substrate. With the composition ratio of the composite layers 3-5 set as specified, the plane cleavages 6 and 7 to a substrate 1, the reflection means 8-10 for respective composite layers 3-5 and an absorbing body 11 are provided. The frequency oscillated from the laser oscillator varies according to the composition ratio of the composite layers 3-5. In addition, projected toward the end of active region layer of the reflection means 8-10, the light is reflected with a reflection means formed both horizontal and vertical, a means of reflecting the light in the same direction and a means of reflecting the light from the reflection means so as to vary the band gap energy of the respective active region layers from each other whereby many lights varied in the wavelength can be obtained on the same axis.
JP6199679A 1979-04-24 1979-05-18 Composite semiconductor laser device Pending JPS55153387A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6199679A JPS55153387A (en) 1979-05-18 1979-05-18 Composite semiconductor laser device
US06/142,743 US4318058A (en) 1979-04-24 1980-04-22 Semiconductor diode laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6199679A JPS55153387A (en) 1979-05-18 1979-05-18 Composite semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55153387A true JPS55153387A (en) 1980-11-29

Family

ID=13187317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6199679A Pending JPS55153387A (en) 1979-04-24 1979-05-18 Composite semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55153387A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966181A (en) * 1982-10-07 1984-04-14 Sumitomo Electric Ind Ltd Integrated semiconductor laser gyro

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244192A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Optical integrated circuit
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244192A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Optical integrated circuit
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966181A (en) * 1982-10-07 1984-04-14 Sumitomo Electric Ind Ltd Integrated semiconductor laser gyro

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