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JPS55141779A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS55141779A
JPS55141779A JP4981379A JP4981379A JPS55141779A JP S55141779 A JPS55141779 A JP S55141779A JP 4981379 A JP4981379 A JP 4981379A JP 4981379 A JP4981379 A JP 4981379A JP S55141779 A JPS55141779 A JP S55141779A
Authority
JP
Japan
Prior art keywords
light
reflecting
semiconductor laser
active layer
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4981379A
Other languages
Japanese (ja)
Inventor
Shigeo Matsushita
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4981379A priority Critical patent/JPS55141779A/en
Publication of JPS55141779A publication Critical patent/JPS55141779A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide an oscillation light of desired wavelength readily by a semiconductor laser by providing a reflecting mirror which is selectively strongly reflecting the light wave on the outside of an active layer varying in single mode along the resonance axial direction in band gap energy. CONSTITUTION:An active layer 3 containing a composition of AlXGa1-XAs is a layer varying in single mode from 0-0.1 in Al containing ratio in resonance axial direction. Reflection preventive films 5, 6 are operated to prevent reflection of a light having 0.8mum of wavelength. Reflecting mirrors 7, 8 selectively reflect the light having a wavelength of 0.85mum. Since a mirror for selectively reflecting a light wave is provided on the outside of the active layer, it can, not only obtain the oscillation light having desired wavelength readily, but realize a composite semiconductor laser for generating the oscillation lights having a number of desired wavelengths from one substrate.
JP4981379A 1979-04-24 1979-04-24 Semiconductor laser Pending JPS55141779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4981379A JPS55141779A (en) 1979-04-24 1979-04-24 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4981379A JPS55141779A (en) 1979-04-24 1979-04-24 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS55141779A true JPS55141779A (en) 1980-11-05

Family

ID=12841555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4981379A Pending JPS55141779A (en) 1979-04-24 1979-04-24 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55141779A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242093A (en) * 1985-03-14 1986-10-28 マツクス‐プランク‐ゲゼルシヤフト　ツール　フオエルデルングデール　ヴイセンシヤフテン　エー．フアオ Improved simiconductor laser device
EP0907229A2 (en) * 1997-09-26 1999-04-07 Ando Electric Co., Ltd. External resonator light source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321589A (en) * 1976-08-12 1978-02-28 Gni I Puroekutonui I Redokomet Hetero junction semiconductor device and method of producing same
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321589A (en) * 1976-08-12 1978-02-28 Gni I Puroekutonui I Redokomet Hetero junction semiconductor device and method of producing same
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242093A (en) * 1985-03-14 1986-10-28 マツクス‐プランク‐ゲゼルシヤフト　ツール　フオエルデルングデール　ヴイセンシヤフテン　エー．フアオ Improved simiconductor laser device
EP0907229A2 (en) * 1997-09-26 1999-04-07 Ando Electric Co., Ltd. External resonator light source
EP0907229A3 (en) * 1997-09-26 1999-05-06 Ando Electric Co., Ltd. External resonator light source
US6343091B1 (en) 1997-09-26 2002-01-29 Ando Electric Co., Ltd. External resonator light source

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