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JPS55121686A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS55121686A
JPS55121686A JP2892379A JP2892379A JPS55121686A JP S55121686 A JPS55121686 A JP S55121686A JP 2892379 A JP2892379 A JP 2892379A JP 2892379 A JP2892379 A JP 2892379A JP S55121686 A JPS55121686 A JP S55121686A
Authority
JP
Japan
Prior art keywords
layer
generating sections
electrodes
disposed
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2892379A
Other languages
Japanese (ja)
Other versions
JPS5910593B2 (en
Inventor
Yukinori Kuwano
Terutoyo Imai
Masakazu Umetani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP54028923A priority Critical patent/JPS5910593B2/en
Priority to US06/116,402 priority patent/US4281208A/en
Publication of JPS55121686A publication Critical patent/JPS55121686A/en
Publication of JPS5910593B2 publication Critical patent/JPS5910593B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To effectively eliminate leakage current of a photovoltaic device such as a battery for generating high voltage of a structure in which a plurality of electrodes are disposed interposing both surfaces of an amorphous silicon layer by modifying the quality of the part of the silicon layer disposed between the generating sections to an insulating layer. CONSTITUTION:A p-type layer 3 disposed between electrodes 12 and 13, a non impurity added layer 4, and an n-type layer 5 as an amorphous silicon layer 11 are formed as a plurality of generating sections 8, 9, 10 on a light transmitting substrate 7. The terminals 14, 15 of the electrodes 12, 13 of the respective generating sections are connected each other, and series suerimposed voltages of the respective generating sections are picked up from the terminals 16, 15'. The layer 11 is continuously formed on the entire surface of the substrate 7 formed with the electrode 12. The part or entirety of the silicon layer disposed between the respective generating sections is modified into an insulator 20 by an ion implantation of oxygen or nitrogen or the like. Thus, it can effectively eliminate the leakage current between the adjacent electrodes 12 and 12 or 13 and 13.
JP54028923A 1979-02-09 1979-03-12 Method of manufacturing photovoltaic device Expired JPS5910593B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP54028923A JPS5910593B2 (en) 1979-03-12 1979-03-12 Method of manufacturing photovoltaic device
US06/116,402 US4281208A (en) 1979-02-09 1980-01-29 Photovoltaic device and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54028923A JPS5910593B2 (en) 1979-03-12 1979-03-12 Method of manufacturing photovoltaic device

Publications (2)

Publication Number Publication Date
JPS55121686A true JPS55121686A (en) 1980-09-18
JPS5910593B2 JPS5910593B2 (en) 1984-03-09

Family

ID=12261913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54028923A Expired JPS5910593B2 (en) 1979-02-09 1979-03-12 Method of manufacturing photovoltaic device

Country Status (1)

Country Link
JP (1) JPS5910593B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155973A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS607778A (en) * 1983-06-27 1985-01-16 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS6014479A (en) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device manufacturing method
JPS6095980A (en) * 1983-10-31 1985-05-29 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPS60211817A (en) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd Apparatus for photoelectric conversion
JPS60211881A (en) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61139072A (en) * 1984-12-11 1986-06-26 Agency Of Ind Science & Technol Method of manufacturing photovoltaic device
KR100416139B1 (en) * 2001-04-04 2004-01-31 삼성에스디아이 주식회사 Solar battery module

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155973A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS607778A (en) * 1983-06-27 1985-01-16 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS6014479A (en) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device manufacturing method
JPS6095980A (en) * 1983-10-31 1985-05-29 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPS60211817A (en) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd Apparatus for photoelectric conversion
JPS60211881A (en) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61139072A (en) * 1984-12-11 1986-06-26 Agency Of Ind Science & Technol Method of manufacturing photovoltaic device
JPH0515073B2 (en) * 1984-12-11 1993-02-26 Kogyo Gijutsuin
KR100416139B1 (en) * 2001-04-04 2004-01-31 삼성에스디아이 주식회사 Solar battery module

Also Published As

Publication number Publication date
JPS5910593B2 (en) 1984-03-09

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