JPS55113370A - Semicondcutor device - Google Patents
Semicondcutor deviceInfo
- Publication number
- JPS55113370A JPS55113370A JP2046879A JP2046879A JPS55113370A JP S55113370 A JPS55113370 A JP S55113370A JP 2046879 A JP2046879 A JP 2046879A JP 2046879 A JP2046879 A JP 2046879A JP S55113370 A JPS55113370 A JP S55113370A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- diffusion
- type
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To make the electrical characteristic of the obtained device such that a high electric field is available in spite of a low voltage application by a method wherein a constant current elements to ve provided at a semicondcutor, device are formed along the logitudinal direction of the device.
CONSTITUTION: An n+-type buried region 2 is formed by diffusion on a p-type substrate and a n--type layer 3 is formed all over the surface with epitaxial growth and with the same process the region 2 is made to develop beneath the layer 3. Next thereto the layer 3 including the region 2 is isolated by a isolation region to shape the island region and at a edge of it an n+-type contact region 6 which is connected to the region 2 is formed by diffusion. On the other hand above the another edge of the layer 2 on the region 3 an n+-type contact region 5 is formed by diffusion in the same way, and at this edge thickness W of the layer 3 between region 5 and 3 is made to be narrower. After this process all surface is covered by a field insulating layer 4 and openings are provided on the region 5 and 6 and the electrodes 7 and 8 are connected and a electric source 9 is connected between them disposed electrode 7 as positive. Thus only low voltage is needed to raise the necessary field strength for obtaining constant current characteristic and an element utilizing scattering limited velocity is available.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2046879A JPS55113370A (en) | 1979-02-23 | 1979-02-23 | Semicondcutor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2046879A JPS55113370A (en) | 1979-02-23 | 1979-02-23 | Semicondcutor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55113370A true JPS55113370A (en) | 1980-09-01 |
Family
ID=12027920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2046879A Pending JPS55113370A (en) | 1979-02-23 | 1979-02-23 | Semicondcutor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113370A (en) |
-
1979
- 1979-02-23 JP JP2046879A patent/JPS55113370A/en active Pending
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