JPS57120378A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57120378A JPS57120378A JP56005879A JP587981A JPS57120378A JP S57120378 A JPS57120378 A JP S57120378A JP 56005879 A JP56005879 A JP 56005879A JP 587981 A JP587981 A JP 587981A JP S57120378 A JPS57120378 A JP S57120378A
- Authority
- JP
- Japan
- Prior art keywords
- metals
- crystal
- wiring
- schottky junction
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 8
- 239000002184 metal Substances 0.000 abstract 8
- 150000002739 metals Chemical class 0.000 abstract 8
- 239000013078 crystal Substances 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 238000000926 separation method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To facilitate effective separation at the places where electrical separation is required such as between wiring metals, by forming the wiring metals to make Schottky junction against a semi-insulative GaAs substrate crystal. CONSTITUTION:Wiring metals 2, 3 are placed in parallel on a semi-insulative GaAs substrate crystal 1. An element 4 is formed on the substrate crystal 1 by selective ion implantation and annealing process. Electrode metals 5, 6 are formed on the element 4. Electrical separation between metals 2, 3 is made effectively if material for metals 2, 3 is selected a good Schottky junction against GaAs crystal. In GaAs crystal, metamorphic layer 7 is formed in the region not implanted with ion which is likely to prove conductive. Schottky junction of the metals 2, 3 electrically separates each wiring metals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56005879A JPS57120378A (en) | 1981-01-20 | 1981-01-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56005879A JPS57120378A (en) | 1981-01-20 | 1981-01-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57120378A true JPS57120378A (en) | 1982-07-27 |
Family
ID=11623186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56005879A Pending JPS57120378A (en) | 1981-01-20 | 1981-01-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57120378A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6158274A (en) * | 1984-08-28 | 1986-03-25 | Sharp Corp | Manufacturing method of semiconductor device |
-
1981
- 1981-01-20 JP JP56005879A patent/JPS57120378A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6158274A (en) * | 1984-08-28 | 1986-03-25 | Sharp Corp | Manufacturing method of semiconductor device |
| JPH0354851B2 (en) * | 1984-08-28 | 1991-08-21 |
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