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JPS5341191A - Electric charge transfer device - Google Patents

Electric charge transfer device

Info

Publication number
JPS5341191A
JPS5341191A JP11616876A JP11616876A JPS5341191A JP S5341191 A JPS5341191 A JP S5341191A JP 11616876 A JP11616876 A JP 11616876A JP 11616876 A JP11616876 A JP 11616876A JP S5341191 A JPS5341191 A JP S5341191A
Authority
JP
Japan
Prior art keywords
electric charge
transfer device
charge transfer
electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11616876A
Other languages
Japanese (ja)
Inventor
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11616876A priority Critical patent/JPS5341191A/en
Publication of JPS5341191A publication Critical patent/JPS5341191A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:The first insulator layer of thickness T is provided between a semiconductor substrate and each electrode of the first electrode group, and the first and seconnd insulator layers of T+ T' thick are installed under each electrode of the second electrode group respectively. As a result, a storage region is formed under each of the first electrodes, and a transfer region featuring a higher threshold voltage than the strage region is ormed under each of the second electrodes. Thus, an electric charge transfer device which is sutably applied for a ailid state pickup unit can be obtained.
JP11616876A 1976-09-28 1976-09-28 Electric charge transfer device Pending JPS5341191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11616876A JPS5341191A (en) 1976-09-28 1976-09-28 Electric charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11616876A JPS5341191A (en) 1976-09-28 1976-09-28 Electric charge transfer device

Publications (1)

Publication Number Publication Date
JPS5341191A true JPS5341191A (en) 1978-04-14

Family

ID=14680464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11616876A Pending JPS5341191A (en) 1976-09-28 1976-09-28 Electric charge transfer device

Country Status (1)

Country Link
JP (1) JPS5341191A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261745A (en) * 1979-02-09 1981-04-14 Toyo Kohan Co., Ltd. Method for preparing a composite metal sintered article
JPS56153579U (en) * 1980-04-18 1981-11-17

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261745A (en) * 1979-02-09 1981-04-14 Toyo Kohan Co., Ltd. Method for preparing a composite metal sintered article
JPS56153579U (en) * 1980-04-18 1981-11-17
JPS6019899Y2 (en) * 1980-04-18 1985-06-14 株式会社城南製作所 Automotive window regulator

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