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JPS5496382A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5496382A
JPS5496382A JP269678A JP269678A JPS5496382A JP S5496382 A JPS5496382 A JP S5496382A JP 269678 A JP269678 A JP 269678A JP 269678 A JP269678 A JP 269678A JP S5496382 A JPS5496382 A JP S5496382A
Authority
JP
Japan
Prior art keywords
layer
curvature radius
type diffusion
resistance
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP269678A
Other languages
Japanese (ja)
Inventor
Shigeo Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP269678A priority Critical patent/JPS5496382A/en
Publication of JPS5496382A publication Critical patent/JPS5496382A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the input dielectric strength of the resistance by setting the curvature radius under the input terminal of the diffusion resistance element larger than the other parts. CONSTITUTION:N-epitaxial layer 12 is isolated via P<+>-layer 13 on P-type substrate 3 containing N<+>-buried layer 11. The P-type diffusion is given selectively to isolated island 14 to form breakdown preventing layer 15 with the curvature radius Rij<4mu. Then diode layer 16, resis tance layer 17b and transistor base layer 18B are formed selectively within the island through the P-type diffusion, with the curvature radius Rzj<3mu. After this, emitter 18E and collector connection layer 18C are formed through the N-type diffusion with the electrode formed. In this constitution, an IC device containing the resistor layer of a high dielectric strength can be formed with no change of the resistance value as well as the mask pattern area of the existing resistance region.
JP269678A 1978-01-17 1978-01-17 Semiconductor integrated circuit device Pending JPS5496382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP269678A JPS5496382A (en) 1978-01-17 1978-01-17 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP269678A JPS5496382A (en) 1978-01-17 1978-01-17 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5496382A true JPS5496382A (en) 1979-07-30

Family

ID=11536432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP269678A Pending JPS5496382A (en) 1978-01-17 1978-01-17 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5496382A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108771A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor device
JPS5635470A (en) * 1979-08-30 1981-04-08 Nec Corp Semiconductor device
JPS56105661A (en) * 1980-01-29 1981-08-22 Nec Corp Semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108771A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor device
JPS5635470A (en) * 1979-08-30 1981-04-08 Nec Corp Semiconductor device
JPS56105661A (en) * 1980-01-29 1981-08-22 Nec Corp Semiconductor integrated circuit device
JPH0368537B2 (en) * 1980-01-29 1991-10-28 Nippon Electric Co

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