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JPS56105661A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56105661A
JPS56105661A JP906180A JP906180A JPS56105661A JP S56105661 A JPS56105661 A JP S56105661A JP 906180 A JP906180 A JP 906180A JP 906180 A JP906180 A JP 906180A JP S56105661 A JPS56105661 A JP S56105661A
Authority
JP
Japan
Prior art keywords
region
type
resistance
diffusion
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP906180A
Other languages
Japanese (ja)
Other versions
JPH0368537B2 (en
Inventor
Yoichi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP906180A priority Critical patent/JPS56105661A/en
Publication of JPS56105661A publication Critical patent/JPS56105661A/en
Publication of JPH0368537B2 publication Critical patent/JPH0368537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent a rupture of a transistor element caused when an abnormal voltage is applied to a resistance element by a method wherein when the transistor element and resistance element are formed on a same semiconductor device, the resistance element is formed in a region of high impurity density rather than in a base region of the transistor element. CONSTITUTION:An N<+> type region 10 for decreasing a collector series resistance is diffusion-formed in an NPN-transistor forming region of a P type Si substrate 9, and an N type layer 11 is epitaxially grown on the whole surface including the region 10. Then, the layer 11 is separated in island-shape by a P<+> type insulated separation region 12 reaching the substrate 9, and the P<+> type insulated separation region 12a made a groundwork of the resistance element is diffusion-formed in the same way in the island-shaped layer 11 until reaching the substrate 9. Thereafter, a P<+> type base region 13b is formed corresponded to a region 11a in the layer 11, a P type region 13a for steepening a backward yielding characteristic of a P-N junction of a resistance region being formed in the region 12a, an N<+> type emitter region 14b being diffusion-formed in the region 13b and a resistance element 14a of an N<+> type low resistance being diffusion-formed in the region 13a, respectively.
JP906180A 1980-01-29 1980-01-29 Semiconductor integrated circuit device Granted JPS56105661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP906180A JPS56105661A (en) 1980-01-29 1980-01-29 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP906180A JPS56105661A (en) 1980-01-29 1980-01-29 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56105661A true JPS56105661A (en) 1981-08-22
JPH0368537B2 JPH0368537B2 (en) 1991-10-28

Family

ID=11710093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP906180A Granted JPS56105661A (en) 1980-01-29 1980-01-29 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56105661A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086857A (en) * 1983-10-19 1985-05-16 Matsushita Electronics Corp semiconductor integrated circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013076A (en) * 1973-06-04 1975-02-10
JPS53140981A (en) * 1977-04-27 1978-12-08 Rca Corp Ic protector
JPS5496382A (en) * 1978-01-17 1979-07-30 Toshiba Corp Semiconductor integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013076A (en) * 1973-06-04 1975-02-10
JPS53140981A (en) * 1977-04-27 1978-12-08 Rca Corp Ic protector
JPS5496382A (en) * 1978-01-17 1979-07-30 Toshiba Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086857A (en) * 1983-10-19 1985-05-16 Matsushita Electronics Corp semiconductor integrated circuit

Also Published As

Publication number Publication date
JPH0368537B2 (en) 1991-10-28

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