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JPS54124678A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPS54124678A
JPS54124678A JP3269878A JP3269878A JPS54124678A JP S54124678 A JPS54124678 A JP S54124678A JP 3269878 A JP3269878 A JP 3269878A JP 3269878 A JP3269878 A JP 3269878A JP S54124678 A JPS54124678 A JP S54124678A
Authority
JP
Japan
Prior art keywords
junction part
lead
junction
thermal expansion
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3269878A
Other languages
Japanese (ja)
Inventor
Manabu Bonshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3269878A priority Critical patent/JPS54124678A/en
Publication of JPS54124678A publication Critical patent/JPS54124678A/en
Pending legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the element destruction dependent upon thermal expansion by forming the element junction part and the lead by individual materials and joining the element junction part to a part of the lead so that the junction part surface and the lead surface may be parallel to each other.
CONSTITUTION: Lead 2 is formed by plating copper or iron nickel with gold. Eelement junction part 4 is formed by Mo, W or alumina ceramic obtained by metallizing Mo or W. Si element 6 is fixed to junction part 4, which is connected by junction part holding part 3 and terminal part 5, by soldering metal 7, and wiring 8 is provided, and resin seal 9 in performed. When the Ni and Au-plated Mo plate is used for junction part 4, the Si element can be joined easily by Au-Si. Further, the element destruction dependent upon temperature change is not generated because the thermal expansion coefficient of Mo is approximately equal to that of Si, and thermal conductivity is good, so that the element can be prevented from having a high temperature, and a high-reliability device can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP3269878A 1978-03-20 1978-03-20 Lead frame Pending JPS54124678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3269878A JPS54124678A (en) 1978-03-20 1978-03-20 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3269878A JPS54124678A (en) 1978-03-20 1978-03-20 Lead frame

Publications (1)

Publication Number Publication Date
JPS54124678A true JPS54124678A (en) 1979-09-27

Family

ID=12366062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3269878A Pending JPS54124678A (en) 1978-03-20 1978-03-20 Lead frame

Country Status (1)

Country Link
JP (1) JPS54124678A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614437U (en) * 1984-06-14 1986-01-11 矢崎総業株式会社 Lead frame for semiconductor devices
US5113240A (en) * 1990-02-22 1992-05-12 Sgs-Thomson Microelectronics S.R.L. Leadframe with heat dissipator connected to s-shaped fingers
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
USRE37707E1 (en) 1990-02-22 2002-05-21 Stmicroelectronics S.R.L. Leadframe with heat dissipator connected to S-shaped fingers
JP2011054607A (en) * 2009-08-31 2011-03-17 Denso Corp Resin sealing type semiconductor device, and method of manufacturing the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614437U (en) * 1984-06-14 1986-01-11 矢崎総業株式会社 Lead frame for semiconductor devices
US5113240A (en) * 1990-02-22 1992-05-12 Sgs-Thomson Microelectronics S.R.L. Leadframe with heat dissipator connected to s-shaped fingers
USRE37707E1 (en) 1990-02-22 2002-05-21 Stmicroelectronics S.R.L. Leadframe with heat dissipator connected to S-shaped fingers
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5653891A (en) * 1992-06-03 1997-08-05 Seiko Epson Corporation Method of producing a semiconductor device with a heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5891759A (en) * 1993-12-16 1999-04-06 Seiko Epson Corporation Method of making a multiple heat sink resin sealing type semiconductor device
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
JP2011054607A (en) * 2009-08-31 2011-03-17 Denso Corp Resin sealing type semiconductor device, and method of manufacturing the same

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