[go: up one dir, main page]

JPS54113277A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54113277A
JPS54113277A JP1981778A JP1981778A JPS54113277A JP S54113277 A JPS54113277 A JP S54113277A JP 1981778 A JP1981778 A JP 1981778A JP 1981778 A JP1981778 A JP 1981778A JP S54113277 A JPS54113277 A JP S54113277A
Authority
JP
Japan
Prior art keywords
wiring
layer
adhere
production
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1981778A
Other languages
Japanese (ja)
Inventor
Isao Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1981778A priority Critical patent/JPS54113277A/en
Publication of JPS54113277A publication Critical patent/JPS54113277A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To prevent the second wiring layer from being exfoliated, by causing the first Al wiring and the second Al wiring layer to adhere to each other in the through hole part of a PIQ resin layer by heating.
CONSTITUTION: PIQ resin is laminated on the substrate where the first Al wiring, and the second Al wiring layer is laminated. Next, when the substrate is heated at a temperature where the first and the second wiring layers are alloyed and caused to adhere to each other, the Al layer and PIQ resin are caused to adhere to each other. After that, when Al is selectively etched to form a wiring pattern, exfoliation is prevented.
COPYRIGHT: (C)1979,JPO&Japio
JP1981778A 1978-02-24 1978-02-24 Production of semiconductor device Pending JPS54113277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981778A JPS54113277A (en) 1978-02-24 1978-02-24 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981778A JPS54113277A (en) 1978-02-24 1978-02-24 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54113277A true JPS54113277A (en) 1979-09-04

Family

ID=12009865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981778A Pending JPS54113277A (en) 1978-02-24 1978-02-24 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54113277A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779648A (en) * 1980-11-05 1982-05-18 Sanyo Electric Co Ltd Multilayer wiring of semiconductor device
JPS63289839A (en) * 1987-05-21 1988-11-28 Nec Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779648A (en) * 1980-11-05 1982-05-18 Sanyo Electric Co Ltd Multilayer wiring of semiconductor device
JPS6146056B2 (en) * 1980-11-05 1986-10-11 Sanyo Denki Kk
JPS63289839A (en) * 1987-05-21 1988-11-28 Nec Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5365088A (en) Semiconductor device
JPS5314580A (en) Production of semiconductor device
JPS54113277A (en) Production of semiconductor device
JPS5748249A (en) Semiconductor device
JPS5378789A (en) Manufacture of semiconductor integrated circuit
JPS5258469A (en) Resin-molded type semiconductor device
JPS5553441A (en) Semiconductor device
JPS5524477A (en) Integrated circuit
JPS5522865A (en) Manufacturing methof of semiconductor device
JPS5272571A (en) Production of semiconductor device
JPS5374392A (en) Multi-layer coat formation method
JPS54158884A (en) Manufacture of semiconductor device
JPS558057A (en) Semiconductor
JPS5779648A (en) Multilayer wiring of semiconductor device
JPS5563843A (en) Formation of wiring conductive layer in semiconductor i.c. device
JPS533066A (en) Electrode formation method
JPS52102691A (en) Formation of wiring on insulating layer having steps
JPS5384693A (en) Production of semiconductor device
JPS5578540A (en) Manufacture of semiconductor device
JPS57206049A (en) Manufacture of semiconductor device
JPS5324287A (en) Production of semiconductor element
JPS5317286A (en) Production of semiconductor device
JPS5321568A (en) Production of semiconductor device
JPS5352388A (en) Semiconductor device
JPS5314564A (en) Bonding method of s# chip and substrate