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JPS5394734A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5394734A
JPS5394734A JP869977A JP869977A JPS5394734A JP S5394734 A JPS5394734 A JP S5394734A JP 869977 A JP869977 A JP 869977A JP 869977 A JP869977 A JP 869977A JP S5394734 A JPS5394734 A JP S5394734A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
dummy cell
resides
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP869977A
Other languages
Japanese (ja)
Other versions
JPS5819139B2 (en
Inventor
Isao Ogura
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52008699A priority Critical patent/JPS5819139B2/en
Publication of JPS5394734A publication Critical patent/JPS5394734A/en
Publication of JPS5819139B2 publication Critical patent/JPS5819139B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To realize a high-reliable dynamic memory by providing the read-write gate extended from the top of the capacitor electrode of a dummy cell and by using the dummy cell where no junction capacitor, etc., resides.
JP52008699A 1977-01-31 1977-01-31 semiconductor storage device Expired JPS5819139B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52008699A JPS5819139B2 (en) 1977-01-31 1977-01-31 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52008699A JPS5819139B2 (en) 1977-01-31 1977-01-31 semiconductor storage device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP58243728A Division JPS59188166A (en) 1983-12-26 1983-12-26 Semiconductor memory
JP58243726A Division JPS59188165A (en) 1983-12-26 1983-12-26 Manufacture of semiconductor memory
JP58243727A Division JPS59130464A (en) 1983-12-26 1983-12-26 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5394734A true JPS5394734A (en) 1978-08-19
JPS5819139B2 JPS5819139B2 (en) 1983-04-16

Family

ID=11700167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52008699A Expired JPS5819139B2 (en) 1977-01-31 1977-01-31 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5819139B2 (en)

Also Published As

Publication number Publication date
JPS5819139B2 (en) 1983-04-16

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