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JPS51147271A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS51147271A
JPS51147271A JP50070832A JP7083275A JPS51147271A JP S51147271 A JPS51147271 A JP S51147271A JP 50070832 A JP50070832 A JP 50070832A JP 7083275 A JP7083275 A JP 7083275A JP S51147271 A JPS51147271 A JP S51147271A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
memory cell
composing
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50070832A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Mitsumasa Koyanagi
Ryoichi Hori
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50070832A priority Critical patent/JPS51147271A/en
Publication of JPS51147271A publication Critical patent/JPS51147271A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To allow reduction in size of a memory cell by composing a dynamic memory cell with a capacitor and a MOST having its inner wall of the etched hole as the channel.
JP50070832A 1975-06-13 1975-06-13 Semiconductor memory device Pending JPS51147271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070832A JPS51147271A (en) 1975-06-13 1975-06-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070832A JPS51147271A (en) 1975-06-13 1975-06-13 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS51147271A true JPS51147271A (en) 1976-12-17

Family

ID=13442931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070832A Pending JPS51147271A (en) 1975-06-13 1975-06-13 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS51147271A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136369A (en) * 1983-12-26 1985-07-19 Toshiba Corp Semiconductor device and its manufacturing method
JPS6346760A (en) * 1986-08-14 1988-02-27 Toshiba Corp Manufacture of semiconductor memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136369A (en) * 1983-12-26 1985-07-19 Toshiba Corp Semiconductor device and its manufacturing method
JPS6145390B2 (en) * 1983-12-26 1986-10-07 Tokyo Shibaura Electric Co
JPS6346760A (en) * 1986-08-14 1988-02-27 Toshiba Corp Manufacture of semiconductor memory

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