JPS5238841A - Charge pump device and integrated memory cells - Google Patents
Charge pump device and integrated memory cellsInfo
- Publication number
- JPS5238841A JPS5238841A JP50115116A JP11511675A JPS5238841A JP S5238841 A JPS5238841 A JP S5238841A JP 50115116 A JP50115116 A JP 50115116A JP 11511675 A JP11511675 A JP 11511675A JP S5238841 A JPS5238841 A JP S5238841A
- Authority
- JP
- Japan
- Prior art keywords
- charge pump
- pump device
- memory cells
- integrated memory
- dsa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a memory unit with small area and high preformance by integrating DSA charge pump device with the same process as DSA transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50115116A JPS5238841A (en) | 1975-09-23 | 1975-09-23 | Charge pump device and integrated memory cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50115116A JPS5238841A (en) | 1975-09-23 | 1975-09-23 | Charge pump device and integrated memory cells |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5238841A true JPS5238841A (en) | 1977-03-25 |
Family
ID=14654629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50115116A Pending JPS5238841A (en) | 1975-09-23 | 1975-09-23 | Charge pump device and integrated memory cells |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5238841A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158403A (en) * | 1978-06-05 | 1979-12-14 | Osaka Gas Co Ltd | Charging hole lid for coke oven |
US4613883A (en) * | 1979-06-29 | 1986-09-23 | Siemens Aktiengesellschaft | Dynamic semiconductor memory cell and method for its manufacture |
US5311049A (en) * | 1991-10-17 | 1994-05-10 | Rohm Co., Ltd. | Non-volatile semiconductor memory with outer drain diffusion layer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4829191A (en) * | 1971-08-14 | 1973-04-18 | ||
JPS49120587A (en) * | 1973-03-19 | 1974-11-18 |
-
1975
- 1975-09-23 JP JP50115116A patent/JPS5238841A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4829191A (en) * | 1971-08-14 | 1973-04-18 | ||
JPS49120587A (en) * | 1973-03-19 | 1974-11-18 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158403A (en) * | 1978-06-05 | 1979-12-14 | Osaka Gas Co Ltd | Charging hole lid for coke oven |
US4613883A (en) * | 1979-06-29 | 1986-09-23 | Siemens Aktiengesellschaft | Dynamic semiconductor memory cell and method for its manufacture |
US5311049A (en) * | 1991-10-17 | 1994-05-10 | Rohm Co., Ltd. | Non-volatile semiconductor memory with outer drain diffusion layer |
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