[go: up one dir, main page]

JPS5372452A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5372452A
JPS5372452A JP14805076A JP14805076A JPS5372452A JP S5372452 A JPS5372452 A JP S5372452A JP 14805076 A JP14805076 A JP 14805076A JP 14805076 A JP14805076 A JP 14805076A JP S5372452 A JPS5372452 A JP S5372452A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
injection
oxide film
channelling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14805076A
Other languages
Japanese (ja)
Inventor
Tsuguo Inada
Hidetoshi Nishi
Tsuneo Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14805076A priority Critical patent/JPS5372452A/en
Publication of JPS5372452A publication Critical patent/JPS5372452A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To increase the effect of injection, by sufficiently removing the surface oxide film in advance, and after that, by preventing the oxide film formation until the injection, in applying the channelling ion injection method.
JP14805076A 1976-12-08 1976-12-08 Manufacture for semiconductor device Pending JPS5372452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14805076A JPS5372452A (en) 1976-12-08 1976-12-08 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14805076A JPS5372452A (en) 1976-12-08 1976-12-08 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372452A true JPS5372452A (en) 1978-06-27

Family

ID=15444014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14805076A Pending JPS5372452A (en) 1976-12-08 1976-12-08 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372452A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403452B1 (en) 1999-02-22 2002-06-11 Kabushiki Kaisha Toshiba Ion implantation method and ion implantation equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403452B1 (en) 1999-02-22 2002-06-11 Kabushiki Kaisha Toshiba Ion implantation method and ion implantation equipment
US6693023B2 (en) 1999-02-22 2004-02-17 Kabushiki Kaisha Toshiba Ion implantation method and ion implantation equipment

Similar Documents

Publication Publication Date Title
JPS5372452A (en) Manufacture for semiconductor device
JPS5253673A (en) Device and production for semiconductor
JPS5242079A (en) Process for producing semiconductor
JPS5228879A (en) Semiconductor device and method for its production
JPS5214374A (en) Treatment equpment for ion beam
JPS51138394A (en) Semiconductor device
JPS5269266A (en) Production of semiconductor device
JPS5397765A (en) Production of semiconductor device
JPS5329086A (en) Production of semiconductor device
JPS5212579A (en) Ion injection method and ion injector
JPS5249781A (en) Process for production of semiconductor device
JPS5379372A (en) Production of silicon semoconductor device
JPS5412566A (en) Production of semiconductor device
JPS51132767A (en) Formation method of semiconductor device
JPS5242368A (en) Process for production of semiconductor device
JPS5344181A (en) Production of semiconductor device
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS5230171A (en) Method for fabrication of semiconductor device
JPS51115771A (en) Selective ion injection method
JPS51138166A (en) Production method of semiconductor device
JPS51151081A (en) Mos type semiconductor apparatus and that manufacturing method
JPS5386569A (en) Semiconductor pellet forming method
JPS52127078A (en) Semiconductor device
JPS51131270A (en) Semi-conductor manufacturing unit
JPS5335386A (en) Production of semiconductor device