[go: up one dir, main page]

JPS5368180A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5368180A
JPS5368180A JP14374476A JP14374476A JPS5368180A JP S5368180 A JPS5368180 A JP S5368180A JP 14374476 A JP14374476 A JP 14374476A JP 14374476 A JP14374476 A JP 14374476A JP S5368180 A JPS5368180 A JP S5368180A
Authority
JP
Japan
Prior art keywords
semiconductor device
single crystal
crystal layer
saphire
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14374476A
Other languages
Japanese (ja)
Other versions
JPS5510982B2 (en
Inventor
Katsutoshi Izumi
Yuki Shimada
Masanobu Doken
Akira Ariyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14374476A priority Critical patent/JPS5368180A/en
Publication of JPS5368180A publication Critical patent/JPS5368180A/en
Publication of JPS5510982B2 publication Critical patent/JPS5510982B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent leakage current and make parasitic capacity negligible by selectively converting the Si single crystal layer on saphire to an insulation layer and form an island form Si single crystal layer and forming an FET in this region.
COPYRIGHT: (C)1978,JPO&Japio
JP14374476A 1976-11-30 1976-11-30 Semiconductor device Granted JPS5368180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14374476A JPS5368180A (en) 1976-11-30 1976-11-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14374476A JPS5368180A (en) 1976-11-30 1976-11-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5368180A true JPS5368180A (en) 1978-06-17
JPS5510982B2 JPS5510982B2 (en) 1980-03-21

Family

ID=15345996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14374476A Granted JPS5368180A (en) 1976-11-30 1976-11-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5368180A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160026842A1 (en) * 2014-07-25 2016-01-28 Qualcomm Technologies, Inc. High-resolution electric field sensor in cover glass

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939236A (en) * 1972-08-21 1974-04-12
JPS5158876A (en) * 1974-11-19 1976-05-22 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939236A (en) * 1972-08-21 1974-04-12
JPS5158876A (en) * 1974-11-19 1976-05-22 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160026842A1 (en) * 2014-07-25 2016-01-28 Qualcomm Technologies, Inc. High-resolution electric field sensor in cover glass
US9558390B2 (en) * 2014-07-25 2017-01-31 Qualcomm Incorporated High-resolution electric field sensor in cover glass
US10268864B2 (en) 2014-07-25 2019-04-23 Qualcomm Technologies, Inc High-resolution electric field sensor in cover glass

Also Published As

Publication number Publication date
JPS5510982B2 (en) 1980-03-21

Similar Documents

Publication Publication Date Title
JPS51135373A (en) Semiconductor device
JPS5425175A (en) Integrated circuit device
JPS5368180A (en) Semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS52128063A (en) Manufacture of semiconductor device
JPS5327371A (en) Sos semiconductor device
JPS5317068A (en) Semiconductor device and its production
JPS52141573A (en) Manufacture of semiconductor device
JPS5373979A (en) Transistor device
JPS52135273A (en) Mos type semiconductor device
JPS51145267A (en) Manufacture of semiconductor device
JPS535580A (en) Field effect type semiconductor device
JPS5384575A (en) Semicocductor device
JPS5384690A (en) Field effect transistor
JPS5376769A (en) Simiconductor device
JPS5286092A (en) Semiconductor integrated circuit
JPS5324279A (en) Semiconductor device
JPS5375777A (en) Mos type semiconductor device
JPS536579A (en) Semiconductor device
JPS536586A (en) Semiconductor device having thin film resistors
JPS51122381A (en) Semiconductor device for ultra low temperature
JPS5317284A (en) Production of semiconductor device
JPS5390773A (en) Silcon semiconductor device on sapphire
JPS5354968A (en) Semiconductor device