JPS5339882A - Production of vertical field effect transistor - Google Patents
Production of vertical field effect transistorInfo
- Publication number
- JPS5339882A JPS5339882A JP11508076A JP11508076A JPS5339882A JP S5339882 A JPS5339882 A JP S5339882A JP 11508076 A JP11508076 A JP 11508076A JP 11508076 A JP11508076 A JP 11508076A JP S5339882 A JPS5339882 A JP S5339882A
- Authority
- JP
- Japan
- Prior art keywords
- production
- field effect
- effect transistor
- vertical field
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To produce a vertical FET of a large hFE without decreasing drain saturation current by making grating-form P type gate layers in the N epitaxial layer on an N type substrate and making gate lead-out layers by covering said layer with an N epitacial layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11508076A JPS5339882A (en) | 1976-09-24 | 1976-09-24 | Production of vertical field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11508076A JPS5339882A (en) | 1976-09-24 | 1976-09-24 | Production of vertical field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5339882A true JPS5339882A (en) | 1978-04-12 |
Family
ID=14653678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11508076A Pending JPS5339882A (en) | 1976-09-24 | 1976-09-24 | Production of vertical field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5339882A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153169A (en) * | 1984-01-23 | 1985-08-12 | Agency Of Ind Science & Technol | ballistic transistor |
JP2002299350A (en) * | 2001-03-30 | 2002-10-11 | Denso Corp | Silicon carbide semiconductor device and its manufacturing method |
-
1976
- 1976-09-24 JP JP11508076A patent/JPS5339882A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153169A (en) * | 1984-01-23 | 1985-08-12 | Agency Of Ind Science & Technol | ballistic transistor |
JP2002299350A (en) * | 2001-03-30 | 2002-10-11 | Denso Corp | Silicon carbide semiconductor device and its manufacturing method |
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