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JPS52123879A - Mos type semiconductor device and its production - Google Patents

Mos type semiconductor device and its production

Info

Publication number
JPS52123879A
JPS52123879A JP4045776A JP4045776A JPS52123879A JP S52123879 A JPS52123879 A JP S52123879A JP 4045776 A JP4045776 A JP 4045776A JP 4045776 A JP4045776 A JP 4045776A JP S52123879 A JPS52123879 A JP S52123879A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
mos type
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4045776A
Other languages
Japanese (ja)
Inventor
Takeshi Kimura
Michihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4045776A priority Critical patent/JPS52123879A/en
Publication of JPS52123879A publication Critical patent/JPS52123879A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a short-channel element with simple construction and without reducing gate size by forming a gate layer of npn structure through insulation film at the middle of two n type regions on a p type substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP4045776A 1976-04-09 1976-04-09 Mos type semiconductor device and its production Pending JPS52123879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4045776A JPS52123879A (en) 1976-04-09 1976-04-09 Mos type semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4045776A JPS52123879A (en) 1976-04-09 1976-04-09 Mos type semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS52123879A true JPS52123879A (en) 1977-10-18

Family

ID=12581162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4045776A Pending JPS52123879A (en) 1976-04-09 1976-04-09 Mos type semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS52123879A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633881A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Manufacture of semiconductor device
JPS60242675A (en) * 1984-10-24 1985-12-02 Hitachi Ltd Manufacture of insulated gate type field-effect semiconductor device
JPS61272972A (en) * 1985-05-28 1986-12-03 Toshiba Corp Semiconductor device and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633881A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Manufacture of semiconductor device
JPS60242675A (en) * 1984-10-24 1985-12-02 Hitachi Ltd Manufacture of insulated gate type field-effect semiconductor device
JPS61272972A (en) * 1985-05-28 1986-12-03 Toshiba Corp Semiconductor device and its manufacturing method

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