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JPS5326580A - Semiconductor unit - Google Patents

Semiconductor unit

Info

Publication number
JPS5326580A
JPS5326580A JP10056976A JP10056976A JPS5326580A JP S5326580 A JPS5326580 A JP S5326580A JP 10056976 A JP10056976 A JP 10056976A JP 10056976 A JP10056976 A JP 10056976A JP S5326580 A JPS5326580 A JP S5326580A
Authority
JP
Japan
Prior art keywords
type layer
semiconductor unit
type
epigrow
bury
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10056976A
Other languages
Japanese (ja)
Inventor
Naonobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10056976A priority Critical patent/JPS5326580A/en
Publication of JPS5326580A publication Critical patent/JPS5326580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: A N+(P+)type layer and a N(P) type layer are laminated and made epigrow on a P(N) type substrate, and a concave part is provided in the surface to bury a P(N) type layer. A NPN(PNP) transistor where the emitter is the P(N) type layer contacting with the N+(P+) type layer are incorporated, so that complementary transistors can be obtained which are easy to treat the large current in the same ft.
COPYRIGHT: (C)1978,JPO&Japio
JP10056976A 1976-08-25 1976-08-25 Semiconductor unit Pending JPS5326580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10056976A JPS5326580A (en) 1976-08-25 1976-08-25 Semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10056976A JPS5326580A (en) 1976-08-25 1976-08-25 Semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5326580A true JPS5326580A (en) 1978-03-11

Family

ID=14277529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10056976A Pending JPS5326580A (en) 1976-08-25 1976-08-25 Semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5326580A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5282665A (en) * 1975-12-29 1977-07-11 Mitsubishi Heavy Ind Ltd Assistant device for connecting and disconnecting pivot shaft of rolling apparatus
JPS5974672A (en) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
US5023195A (en) * 1989-05-19 1991-06-11 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit including a bipolar transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5282665A (en) * 1975-12-29 1977-07-11 Mitsubishi Heavy Ind Ltd Assistant device for connecting and disconnecting pivot shaft of rolling apparatus
JPS5426509B2 (en) * 1975-12-29 1979-09-04
JPS5974672A (en) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
US5023195A (en) * 1989-05-19 1991-06-11 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit including a bipolar transistor

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