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JPS5298479A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5298479A
JPS5298479A JP1512876A JP1512876A JPS5298479A JP S5298479 A JPS5298479 A JP S5298479A JP 1512876 A JP1512876 A JP 1512876A JP 1512876 A JP1512876 A JP 1512876A JP S5298479 A JPS5298479 A JP S5298479A
Authority
JP
Japan
Prior art keywords
semiconductor device
base
conductivity type
made possible
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1512876A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1512876A priority Critical patent/JPS5298479A/en
Publication of JPS5298479A publication Critical patent/JPS5298479A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: Base resistance is reduced and desired transistor operation of multi emitter transistors is made possible by providing buried layers of the same conductivity type as base layer directly under a dielectric layer.
COPYRIGHT: (C)1977,JPO&Japio
JP1512876A 1976-02-14 1976-02-14 Semiconductor device Pending JPS5298479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1512876A JPS5298479A (en) 1976-02-14 1976-02-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1512876A JPS5298479A (en) 1976-02-14 1976-02-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5298479A true JPS5298479A (en) 1977-08-18

Family

ID=11880175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1512876A Pending JPS5298479A (en) 1976-02-14 1976-02-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5298479A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc HIGH POWER SWITCHING TRANSISTOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc HIGH POWER SWITCHING TRANSISTOR

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