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JPS52111373A - Method of testing electrooactive defects in semiconductor substrates - Google Patents

Method of testing electrooactive defects in semiconductor substrates

Info

Publication number
JPS52111373A
JPS52111373A JP1940477A JP1940477A JPS52111373A JP S52111373 A JPS52111373 A JP S52111373A JP 1940477 A JP1940477 A JP 1940477A JP 1940477 A JP1940477 A JP 1940477A JP S52111373 A JPS52111373 A JP S52111373A
Authority
JP
Japan
Prior art keywords
electrooactive
defects
testing
semiconductor substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1940477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5320380B2 (de
Inventor
Ruisu Deinzu Jiyon
Robaato Poponiaku Mikaeru
Otsutoo Shiyuenkaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS52111373A publication Critical patent/JPS52111373A/ja
Publication of JPS5320380B2 publication Critical patent/JPS5320380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP1940477A 1976-03-15 1977-02-25 Method of testing electrooactive defects in semiconductor substrates Granted JPS52111373A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66723276A 1976-03-15 1976-03-15

Publications (2)

Publication Number Publication Date
JPS52111373A true JPS52111373A (en) 1977-09-19
JPS5320380B2 JPS5320380B2 (de) 1978-06-26

Family

ID=24677379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1940477A Granted JPS52111373A (en) 1976-03-15 1977-02-25 Method of testing electrooactive defects in semiconductor substrates

Country Status (6)

Country Link
JP (1) JPS52111373A (de)
CA (1) CA1069221A (de)
DE (1) DE2707372C2 (de)
FR (1) FR2344847A1 (de)
GB (1) GB1514697A (de)
IT (1) IT1118013B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008042133A (ja) * 2006-08-10 2008-02-21 Shindengen Electric Mfg Co Ltd 半導体基板の検査方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (fr) * 1982-09-08 1984-03-09 Comp Generale Electricite Procede et dispositif pour obtenir des caracteristiques physiques d'un materiau semi-conducteur
JPS6066920A (ja) * 1983-09-22 1985-04-17 北興化工機株式会社 可搬式サイレ−ジ容器
DE3917702A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Verfahren zur ortsaufgeloesten bestimmung der diffusionslaenge von minoritaetsladungstraegern in einem halbleiterkristallkoerper mit hilfe einer elektrolytischen zelle
DE59006874D1 (de) * 1989-05-31 1994-09-29 Siemens Ag Verfahren zur Bestimmung der Rekombinationsgeschwindigkeit von Minoritätsträgern an Grenzflächen zwischen Halbleitern und anderen Substanzen.
DE59010140D1 (de) * 1989-05-31 1996-03-28 Siemens Ag Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten
DE4328083A1 (de) * 1993-08-20 1994-03-31 Ignaz Eisele Verfahren zur mikroskopischen Messung von Topographie und lateralen Potentialverteilungen an einer Oberfläche mit einer Feldeffektanordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008042133A (ja) * 2006-08-10 2008-02-21 Shindengen Electric Mfg Co Ltd 半導体基板の検査方法

Also Published As

Publication number Publication date
FR2344847B1 (de) 1979-09-28
DE2707372C2 (de) 1985-08-22
GB1514697A (en) 1978-06-21
FR2344847A1 (fr) 1977-10-14
DE2707372A1 (de) 1977-09-22
CA1069221A (en) 1980-01-01
JPS5320380B2 (de) 1978-06-26
IT1118013B (it) 1986-02-24

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