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JPS52104879A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS52104879A
JPS52104879A JP2114276A JP2114276A JPS52104879A JP S52104879 A JPS52104879 A JP S52104879A JP 2114276 A JP2114276 A JP 2114276A JP 2114276 A JP2114276 A JP 2114276A JP S52104879 A JPS52104879 A JP S52104879A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
mask
drain regions
preventing film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2114276A
Other languages
Japanese (ja)
Inventor
Yoshiaki Kamigaki
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2114276A priority Critical patent/JPS52104879A/en
Publication of JPS52104879A publication Critical patent/JPS52104879A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase gate withstanding voltage and to decrease variation of threshold voltage by forming a preventing film for impurity doping on a gate electrode for using as a mask, before forming source and drain regions.
COPYRIGHT: (C)1977,JPO&Japio
JP2114276A 1976-03-01 1976-03-01 Manufacture of semiconductor device Pending JPS52104879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2114276A JPS52104879A (en) 1976-03-01 1976-03-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2114276A JPS52104879A (en) 1976-03-01 1976-03-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS52104879A true JPS52104879A (en) 1977-09-02

Family

ID=12046635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2114276A Pending JPS52104879A (en) 1976-03-01 1976-03-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52104879A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671973A (en) * 1979-11-16 1981-06-15 Nec Corp Preparation method of semiconductor system
JPS5832466A (en) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Manufacture of mosfet
JPS6035576A (en) * 1984-04-25 1985-02-23 Hitachi Ltd Manufacturing method of MOS semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671973A (en) * 1979-11-16 1981-06-15 Nec Corp Preparation method of semiconductor system
JPH0442833B2 (en) * 1979-11-16 1992-07-14 Nippon Electric Co
JPS5832466A (en) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Manufacture of mosfet
JPS6035576A (en) * 1984-04-25 1985-02-23 Hitachi Ltd Manufacturing method of MOS semiconductor device

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