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JPS4875482A - - Google Patents

Info

Publication number
JPS4875482A
JPS4875482A JP47111956A JP11195672A JPS4875482A JP S4875482 A JPS4875482 A JP S4875482A JP 47111956 A JP47111956 A JP 47111956A JP 11195672 A JP11195672 A JP 11195672A JP S4875482 A JPS4875482 A JP S4875482A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47111956A
Other languages
Japanese (ja)
Other versions
JPS5215075B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4875482A publication Critical patent/JPS4875482A/ja
Publication of JPS5215075B2 publication Critical patent/JPS5215075B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP47111956A 1971-11-08 1972-11-08 Expired JPS5215075B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00196449A US3846082A (en) 1971-11-08 1971-11-08 Production of crystalline bodies of complex geometries

Publications (2)

Publication Number Publication Date
JPS4875482A true JPS4875482A (en) 1973-10-11
JPS5215075B2 JPS5215075B2 (en) 1977-04-26

Family

ID=22725468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47111956A Expired JPS5215075B2 (en) 1971-11-08 1972-11-08

Country Status (11)

Country Link
US (1) US3846082A (en)
JP (1) JPS5215075B2 (en)
BE (1) BE791024A (en)
BR (1) BR7207786D0 (en)
CA (1) CA974859A (en)
CH (1) CH576283A5 (en)
DE (1) DE2254616C3 (en)
FR (1) FR2159339B1 (en)
GB (1) GB1382529A (en)
IT (1) IT973428B (en)
NL (1) NL7215097A (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
JPS55144338A (en) * 1979-03-20 1980-11-11 Aida Eng Ltd Transfer driving device
US4612972A (en) * 1982-01-04 1986-09-23 Olin Corporation Method and apparatus for electro-magnetic casting of complex shapes
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
JPH0733310B2 (en) * 1987-03-27 1995-04-12 モービル・ソラー・エナージー・コーポレーション Crystal growth equipment
US5346883A (en) * 1987-08-21 1994-09-13 The Furukawa Electric Co., Ltd. Method of manufacturing superconductive products
WO1992001091A1 (en) * 1990-07-10 1992-01-23 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
AU9034491A (en) * 1990-08-15 1992-03-17 Mobil Solar Energy Corporation Method of growing cylindrical tubular crystalline bodies
US5266151A (en) * 1992-03-04 1993-11-30 Advanced Crystal Products Corporation Inside edge defined, self-filling (IESF) die for crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
FR2712608B1 (en) * 1993-11-16 1996-01-12 Commissariat Energie Atomique Method for manufacturing parts of polycrystalline or monocrystalline material by growth from a molten bath.
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
US6722873B2 (en) * 2001-09-10 2004-04-20 Recot, Inc. Apparatus for producing a curly puff extrudate
US20050034581A1 (en) * 2003-08-12 2005-02-17 Eugenio Bortone Method and apparatus for cutting a curly puff extrudate
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7584689B2 (en) * 2005-06-10 2009-09-08 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite armor
KR101225470B1 (en) * 2006-09-22 2013-01-24 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 C-plane sapphire apparatus
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
RU2451117C2 (en) * 2010-06-09 2012-05-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Device to grow profiled crystals from melt in form of hollow rotary bodies
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (en) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Process for the production of the purest silicon for semiconductor devices
NL121446C (en) * 1958-11-17
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
NL238924A (en) * 1959-05-05
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
BE638262A (en) * 1962-10-18
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
DE1519897B2 (en) * 1966-08-06 1974-07-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method and device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
DE1935372C3 (en) * 1969-07-11 1980-06-19 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Method and device for drawing a crystalline body of predetermined cross section from a melt

Also Published As

Publication number Publication date
CA974859A (en) 1975-09-23
GB1382529A (en) 1975-02-05
BE791024A (en) 1973-05-07
DE2254616A1 (en) 1973-05-10
US3846082A (en) 1974-11-05
BR7207786D0 (en) 1973-09-27
NL7215097A (en) 1973-05-10
DE2254616C3 (en) 1975-07-10
FR2159339A1 (en) 1973-06-22
IT973428B (en) 1974-06-10
FR2159339B1 (en) 1977-07-29
CH576283A5 (en) 1976-06-15
JPS5215075B2 (en) 1977-04-26
DE2254616B2 (en) 1974-11-28

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