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GB1382529A - Production of crystalline bodies of complex geometries - Google Patents

Production of crystalline bodies of complex geometries

Info

Publication number
GB1382529A
GB1382529A GB4986172A GB4986172A GB1382529A GB 1382529 A GB1382529 A GB 1382529A GB 4986172 A GB4986172 A GB 4986172A GB 4986172 A GB4986172 A GB 4986172A GB 1382529 A GB1382529 A GB 1382529A
Authority
GB
United Kingdom
Prior art keywords
film
melt
pulling
seed
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4986172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of GB1382529A publication Critical patent/GB1382529A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1382529 Crystal pulling TYCO LABORATORIES INC 30 Oct 1972 [8 Nov 1971] 49861/72 Heading BIS A "substantially monocrystalline" elongated body twisted along a selected axis is made by pulling a seed from a thin liquid film of material on a horizontal surface which terminates in sharp edges and has an edge configuration conforming to the desired cross-sectional configuration desired and simultaneously rotating the crystalline body about a selected axis whilst supplying material to the surface to maintain the film. The temperature of the film is controlled so that it is hottest near the surface. By "substantially monocrystalline" is meant a crystalline body comprised of a single crystal or two or more crystals growing together longitudinally but separated by a grain boundary of less than about 4‹. The material may be alumina ruby, spinel, beryllia, barium titanate, ythrium aluminium garnet, lithium niobate, lithium fluoride or calcium fluoride. The body may be a round rod with a spiral hole extending lengthwise, a hollow tube with a twist, a helical rod or tube, or a plate of dual axis curvature. Using the apparatus of figures 1 and 3, a monocrystalline tube of rectangular cross-section and having an axial twist is made by mounting a seed crystal 24, in chuck 22 with pulling rod 20 axially aligned with rod 38 of the die assembly shown in Figure 3. The crucible 12 is then filled with an inert gas and the R.F. coil 6 energized to melt the charge. The capillaries 46, fill with melt from melt 27 and the heating is adjusted so that the upper surface 44 of the die is about 10-40‹C higher than the melting point of the seed after which the seed crystal is lowered into contact with surface 44 and held there until connected with the melt in and from the capillaries by a film 48 (Figure 4) of the order of 0.1 mm. thickness. When the film is conected the pulling mechanism 18 is actuated to pull seed 24 upwards from the surface 44 without any rotation until growth is occurring from all points of the film, then the pulling mechanism is rotated. Growth is generally continued until the supply of melt is exhausted. Complex shapes can be produced by combining rotation of the seed crystal with a pulling movement of the type illustrated in Figures 11-13 (not shown), or by reverse rotation of the seed crystal.
GB4986172A 1971-11-08 1972-10-30 Production of crystalline bodies of complex geometries Expired GB1382529A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00196449A US3846082A (en) 1971-11-08 1971-11-08 Production of crystalline bodies of complex geometries

Publications (1)

Publication Number Publication Date
GB1382529A true GB1382529A (en) 1975-02-05

Family

ID=22725468

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4986172A Expired GB1382529A (en) 1971-11-08 1972-10-30 Production of crystalline bodies of complex geometries

Country Status (11)

Country Link
US (1) US3846082A (en)
JP (1) JPS5215075B2 (en)
BE (1) BE791024A (en)
BR (1) BR7207786D0 (en)
CA (1) CA974859A (en)
CH (1) CH576283A5 (en)
DE (1) DE2254616C3 (en)
FR (1) FR2159339B1 (en)
GB (1) GB1382529A (en)
IT (1) IT973428B (en)
NL (1) NL7215097A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139917A (en) * 1983-05-19 1984-11-21 Mobil Solar Energy Corp Efg process and apparatus

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
JPS55144338A (en) * 1979-03-20 1980-11-11 Aida Eng Ltd Transfer driving device
US4612972A (en) * 1982-01-04 1986-09-23 Olin Corporation Method and apparatus for electro-magnetic casting of complex shapes
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
JPH0733310B2 (en) * 1987-03-27 1995-04-12 モービル・ソラー・エナージー・コーポレーション Crystal growth equipment
US5346883A (en) * 1987-08-21 1994-09-13 The Furukawa Electric Co., Ltd. Method of manufacturing superconductive products
WO1992001091A1 (en) * 1990-07-10 1992-01-23 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
AU9034491A (en) * 1990-08-15 1992-03-17 Mobil Solar Energy Corporation Method of growing cylindrical tubular crystalline bodies
US5266151A (en) * 1992-03-04 1993-11-30 Advanced Crystal Products Corporation Inside edge defined, self-filling (IESF) die for crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
FR2712608B1 (en) * 1993-11-16 1996-01-12 Commissariat Energie Atomique Method for manufacturing parts of polycrystalline or monocrystalline material by growth from a molten bath.
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
US6722873B2 (en) * 2001-09-10 2004-04-20 Recot, Inc. Apparatus for producing a curly puff extrudate
US20050034581A1 (en) * 2003-08-12 2005-02-17 Eugenio Bortone Method and apparatus for cutting a curly puff extrudate
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7584689B2 (en) * 2005-06-10 2009-09-08 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite armor
KR101225470B1 (en) * 2006-09-22 2013-01-24 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 C-plane sapphire apparatus
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
RU2451117C2 (en) * 2010-06-09 2012-05-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Device to grow profiled crystals from melt in form of hollow rotary bodies
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (en) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Process for the production of the purest silicon for semiconductor devices
NL121446C (en) * 1958-11-17
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
NL238924A (en) * 1959-05-05
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
BE638262A (en) * 1962-10-18
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
DE1519897B2 (en) * 1966-08-06 1974-07-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method and device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
DE1935372C3 (en) * 1969-07-11 1980-06-19 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Method and device for drawing a crystalline body of predetermined cross section from a melt

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139917A (en) * 1983-05-19 1984-11-21 Mobil Solar Energy Corp Efg process and apparatus
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies

Also Published As

Publication number Publication date
CA974859A (en) 1975-09-23
BE791024A (en) 1973-05-07
DE2254616A1 (en) 1973-05-10
JPS4875482A (en) 1973-10-11
US3846082A (en) 1974-11-05
BR7207786D0 (en) 1973-09-27
NL7215097A (en) 1973-05-10
DE2254616C3 (en) 1975-07-10
FR2159339A1 (en) 1973-06-22
IT973428B (en) 1974-06-10
FR2159339B1 (en) 1977-07-29
CH576283A5 (en) 1976-06-15
JPS5215075B2 (en) 1977-04-26
DE2254616B2 (en) 1974-11-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years