JPH11512888A - 流体容器内で基板を処理するための装置 - Google Patents
流体容器内で基板を処理するための装置Info
- Publication number
- JPH11512888A JPH11512888A JP9541437A JP54143797A JPH11512888A JP H11512888 A JPH11512888 A JP H11512888A JP 9541437 A JP9541437 A JP 9541437A JP 54143797 A JP54143797 A JP 54143797A JP H11512888 A JPH11512888 A JP H11512888A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- container
- fluid
- fluid container
- ultrasonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 150
- 239000012530 fluid Substances 0.000 title claims abstract description 103
- 238000012545 processing Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims description 29
- 230000000295 complement effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000013016 damping Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 13
- 238000002604 ultrasonography Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 238000000527 sonication Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.流体容器(1)内で基板(5)を超音波によって処理するための装置であっ て、処理過程中に基板(5)が流体容器(1)内で可動である形式のものにおい て、 流体容器(1)の少なくとも1つの容器壁(3,4)の内面に、基板(5) のためのガイド(7)が設けられており、容器壁(3,4)の少なくとも1つの 領域が、流体容器(1)内に挿入された基板(5)を超音波処理するために超音 波放射装置として形成されていることを特徴とする、流体容器内で基板を処理す るための装置。 2.基板(5)が流体容器(1)内で処理中に昇降可能である、請求項1記載の 装置。 3.基板(5)が、流体容器(1)の可動な基板収容装置(6)に配置されてい る、請求項1及び2記載の装置。 4.基板収容装置(6)がウエブであって、該ウエブは、基板(5)の下側に、 基板面に対して鉛直方向に位置していて、前記ウエブの上に基板(5)が載置さ れている、請求項3記載の装置。 5.基板収容装置(6)が保持領域を有している、請求項3又は4記載の装置。 6.ガイド(7)が、スリット及び/又はウエブ及び /又はピン及び/又は突起である、請求項5記載の装置。 7.流体容器(1)の側壁(3,4)の内面が、ガイドを有していない領域を有 している、請求項5又は6記載の装置。 8.ガイドを有していない側壁(3,4)の内面の領域が、流入開口及び/又は 噴霧ノズル及び/又はディフューザ及び/又は紫外線光源及び/又は超音波放射 装置を有している、請求項4から7までのいずれか1項記載の装置。 9.基板(5)が流体容器(1)内で、処理過程中に回転可能である、請求項1 から8までのいずれか1項記載の装置。 10.基板収容装置(6)が、基板(5)を保持するために少なくとも2つの保持 領域を有している、請求項1から9までのいずれか1項記載の装置。 11.基板(5)が基板収容装置(6)内に保持されている、請求項10記載の装 置。 12.基板収容装置(6)がスリットを有している、請求項10又は11記載の装 置。 13.スリットが、基板のエッジ形状に対して相補的に形成されている、請求項1 0から12までのいずれか1項記載の装置。 14.スリットの幅が、スリット開口部からスリット底部に向かって減少している 、請求項10から13ま でのいずれか1項記載の装置。 15.スリットの第1の壁は鉛直であって、スリットの第2の壁は、鉛直に対して 第1の規定された角度だけ傾けられている、請求項10から14までのいずれか 1項記載の装置。 16.少なくとも1つの基板保持装置が、基板(5)の上方縁部領域に設けられて いる、請求項1から15までのいずれか1項記載の装置。 17.容器底部(2)が、超音波放射装置として形成されている、請求項1から1 6までのいずれか1項記載の装置。 18.超音波放射装置として形成された容器底部(2)及び/又は超音波放射装置 として形成された容器壁(3,4)に、流体ノズルを有した領域が形成されてい る、請求項17に記載の装置。 19.容器底部(2)及び/又は少なくとも1つの容器壁(3,4)が、流体ノズ ル放射面として形成されていて、少なくとも1つの領域が超音波放射装置として 形成されている、請求項1から16までのいずれか1項記載の装置。 20.流体ノズル(12)が超音波放射装置(11)と音波伝達結合している、請 求項17から19までのいずれか1項記載の装置。 21.流体ノズル(12)が超音波放射装置(11)と音波伝達結合していない、 請求項17から19まで のいずれか1項記載の装置。 22.流体ノズル(12)が、超音波緩衝材料(17)に配置されている、請求項 17から19までのいずれか1項記載の装置。 23.超音波緩衝材料(17)が、流体ノズル支持ストリップとして、超音波放射 装置(11)に相補的に形成された切欠(18)内に挿入又は押し込み可能であ る、請求項22記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19621587.0 | 1996-05-29 | ||
DE19621587 | 1996-05-29 | ||
PCT/EP1997/001576 WO1997045860A1 (de) | 1996-05-29 | 1997-03-27 | Vorrichtung zum behandeln von substraten in einem fluid-behälter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11512888A true JPH11512888A (ja) | 1999-11-02 |
JP3699485B2 JP3699485B2 (ja) | 2005-09-28 |
Family
ID=7795610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54143797A Expired - Fee Related JP3699485B2 (ja) | 1996-05-29 | 1997-03-27 | 流体容器内で基板を処理するための装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6240938B1 (ja) |
EP (1) | EP0956583A1 (ja) |
JP (1) | JP3699485B2 (ja) |
KR (1) | KR100338895B1 (ja) |
DE (1) | DE19722423C2 (ja) |
ID (1) | ID16917A (ja) |
TW (1) | TW461828B (ja) |
WO (1) | WO1997045860A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6630052B1 (en) * | 1996-06-26 | 2003-10-07 | Lg. Philips Lcd Co., Ltd. | Apparatus for etching glass substrate |
DE19644255C1 (de) | 1996-10-24 | 1998-04-30 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten und Verwendung der Vorrichtung |
DE19758267A1 (de) * | 1997-12-31 | 1999-07-08 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zum Behandeln von Substraten |
DE10030718A1 (de) * | 2000-06-23 | 2002-01-10 | Univ Ilmenau Tech | Verfahren und Vorrichtung zum Reinigen von Gegenständen mit Schallwellen |
US6726848B2 (en) * | 2001-12-07 | 2004-04-27 | Scp Global Technologies, Inc. | Apparatus and method for single substrate processing |
US20090029560A1 (en) * | 2001-12-07 | 2009-01-29 | Applied Materials, Inc. | Apparatus and method for single substrate processing |
US20070079932A1 (en) * | 2001-12-07 | 2007-04-12 | Applied Materials, Inc. | Directed purge for contact free drying of wafers |
US20070272657A1 (en) * | 2001-12-07 | 2007-11-29 | Eric Hansen | Apparatus and method for single substrate processing |
US20080000495A1 (en) * | 2001-12-07 | 2008-01-03 | Eric Hansen | Apparatus and method for single substrate processing |
US7373941B2 (en) * | 2003-03-28 | 2008-05-20 | Taiwan Semiconductor Manufacturing Co. Ltd | Wet cleaning cavitation system and method to remove particulate wafer contamination |
DE102005012244B4 (de) | 2005-03-15 | 2008-12-24 | Rena Sondermaschinen Gmbh | Verfahren zur Reinigung von Gegenständen mittels Ultraschall |
US8070884B2 (en) * | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
US20070107748A1 (en) * | 2005-11-16 | 2007-05-17 | Donald Gray | Vacuum cavitational streaming |
KR101244896B1 (ko) * | 2006-06-05 | 2013-03-19 | 삼성디스플레이 주식회사 | 기판 식각장치 |
US7775219B2 (en) * | 2006-12-29 | 2010-08-17 | Applied Materials, Inc. | Process chamber lid and controlled exhaust |
US20080236615A1 (en) * | 2007-03-28 | 2008-10-02 | Mimken Victor B | Method of processing wafers in a sequential fashion |
EP2515323B1 (en) * | 2011-04-21 | 2014-03-19 | Imec | Method and apparatus for cleaning semiconductor substrates |
EP4016597A1 (en) * | 2019-12-20 | 2022-06-22 | Semsysco GmbH | Module for chemically processing a substrate |
Family Cites Families (33)
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US3276459A (en) * | 1965-03-08 | 1966-10-04 | John J Harrison | Washing unit providing an up-and-down movement of a workpiece in a cleaning bath |
US3702795A (en) * | 1968-02-21 | 1972-11-14 | Grace W R & Co | Apparatus for ultrasonic etching of polymeric printing plates |
US4671206A (en) * | 1983-06-20 | 1987-06-09 | Hoppestad Lamont I | Article support rack |
JPS60130832A (ja) * | 1983-12-19 | 1985-07-12 | Mitsubishi Electric Corp | 半導体ウエハの水洗装置 |
US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
JPS61189642A (ja) * | 1985-02-18 | 1986-08-23 | Mitsubishi Electric Corp | プラズマ反応装置 |
JPS61189647A (ja) * | 1985-02-19 | 1986-08-23 | Toshiba Ceramics Co Ltd | 半導体ウエハ洗浄用ウエハボ−ト |
US4902350A (en) | 1987-09-09 | 1990-02-20 | Robert F. Orr | Method for rinsing, cleaning and drying silicon wafers |
JPH01304733A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 半導体ウエハの洗浄装置 |
JPH02117135A (ja) * | 1988-10-26 | 1990-05-01 | Mitsubishi Electric Corp | ウエハ洗浄槽 |
JP2653511B2 (ja) * | 1989-03-30 | 1997-09-17 | 株式会社東芝 | 半導体装置の洗浄方法及びその洗浄装置 |
US5133376A (en) * | 1989-05-17 | 1992-07-28 | Samarin Igor A | Device for ultrasonic machining or articles in liquid medium |
JP2549735B2 (ja) | 1989-07-14 | 1996-10-30 | 株式会社東芝 | 流液式超音波洗浄装置 |
JPH0366124A (ja) * | 1989-08-04 | 1991-03-20 | Fujitsu Ltd | 洗浄装置 |
JPH03231428A (ja) * | 1990-02-07 | 1991-10-15 | Hitachi Cable Ltd | 半導体ウエハの洗浄方法 |
JPH0437131A (ja) * | 1990-06-01 | 1992-02-07 | Fuji Electric Co Ltd | 半導体ウエハの純水水洗槽及び水洗方法 |
US5090432A (en) | 1990-10-16 | 1992-02-25 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
US5275184A (en) | 1990-10-19 | 1994-01-04 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and system for treating surface of a wafer by dipping the same in a treatment solution and a gate device for chemical agent used in the apparatus and the system |
JPH04245432A (ja) | 1991-01-31 | 1992-09-02 | Fujitsu Ltd | 基板の洗浄方法 |
US5088510A (en) * | 1991-02-04 | 1992-02-18 | Bannon John H | Ultrasonic parts cleaning container |
JP2901098B2 (ja) | 1991-04-02 | 1999-06-02 | 東京エレクトロン株式会社 | 洗浄装置および洗浄方法 |
US5488964A (en) | 1991-05-08 | 1996-02-06 | Tokyo Electron Limited | Washing apparatus, and washing method |
JPH05109685A (ja) * | 1991-10-15 | 1993-04-30 | Toshiba Corp | 超音波洗浄装置 |
JPH05129268A (ja) * | 1991-10-31 | 1993-05-25 | Fuji Electric Co Ltd | ウエーハ洗浄装置 |
US5327921A (en) | 1992-03-05 | 1994-07-12 | Tokyo Electron Limited | Processing vessel for a wafer washing system |
US5427622A (en) * | 1993-02-12 | 1995-06-27 | International Business Machines Corporation | Method for uniform cleaning of wafers using megasonic energy |
US5383484A (en) | 1993-07-16 | 1995-01-24 | Cfmt, Inc. | Static megasonic cleaning system for cleaning objects |
JPH07263397A (ja) * | 1994-03-25 | 1995-10-13 | Hitachi Ltd | 超音波洗浄方法 |
DE4413077C2 (de) | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur chemischen Behandlung von Substraten |
US5520205A (en) * | 1994-07-01 | 1996-05-28 | Texas Instruments Incorporated | Apparatus for wafer cleaning with rotation |
DE4428169C2 (de) | 1994-08-09 | 1996-07-11 | Steag Micro Tech Gmbh | Träger für Substrate |
US5593505A (en) * | 1995-04-19 | 1997-01-14 | Memc Electronic Materials, Inc. | Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface |
DE19616402C2 (de) * | 1996-04-24 | 2001-11-29 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten in einem Fluid-Behälter |
-
1996
- 1996-12-06 US US08/761,717 patent/US6240938B1/en not_active Expired - Fee Related
-
1997
- 1997-03-27 KR KR1019980704777A patent/KR100338895B1/ko not_active IP Right Cessation
- 1997-03-27 WO PCT/EP1997/001576 patent/WO1997045860A1/de not_active Application Discontinuation
- 1997-03-27 JP JP54143797A patent/JP3699485B2/ja not_active Expired - Fee Related
- 1997-03-27 EP EP97915452A patent/EP0956583A1/de not_active Withdrawn
- 1997-05-13 TW TW086106386A patent/TW461828B/zh not_active IP Right Cessation
- 1997-05-16 ID IDP971632A patent/ID16917A/id unknown
- 1997-05-28 DE DE19722423A patent/DE19722423C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19990076665A (ko) | 1999-10-15 |
EP0956583A1 (de) | 1999-11-17 |
US6240938B1 (en) | 2001-06-05 |
TW461828B (en) | 2001-11-01 |
DE19722423A1 (de) | 1997-12-11 |
ID16917A (id) | 1997-11-20 |
KR100338895B1 (ko) | 2002-07-18 |
WO1997045860A1 (de) | 1997-12-04 |
DE19722423C2 (de) | 1999-04-22 |
JP3699485B2 (ja) | 2005-09-28 |
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