JPH11256349A - Plating method with high adhesion property on resin base and copper plating liquid to be used for that - Google Patents
Plating method with high adhesion property on resin base and copper plating liquid to be used for thatInfo
- Publication number
- JPH11256349A JPH11256349A JP7126698A JP7126698A JPH11256349A JP H11256349 A JPH11256349 A JP H11256349A JP 7126698 A JP7126698 A JP 7126698A JP 7126698 A JP7126698 A JP 7126698A JP H11256349 A JPH11256349 A JP H11256349A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- acid
- copper plating
- electroless copper
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 88
- 239000010949 copper Substances 0.000 title claims abstract description 88
- 238000007747 plating Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229920005989 resin Polymers 0.000 title claims abstract description 25
- 239000011347 resin Substances 0.000 title claims abstract description 25
- 239000007788 liquid Substances 0.000 title claims abstract 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 30
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 28
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 25
- 150000003839 salts Chemical class 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 15
- 238000001556 precipitation Methods 0.000 claims abstract description 15
- 239000008139 complexing agent Substances 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000009713 electroplating Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims description 21
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 10
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 7
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N thiocyanic acid Chemical compound SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims description 6
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims description 6
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 claims description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- HTKFORQRBXIQHD-UHFFFAOYSA-N allylthiourea Chemical compound NC(=S)NCC=C HTKFORQRBXIQHD-UHFFFAOYSA-N 0.000 claims description 5
- 229960001748 allylthiourea Drugs 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 230000003197 catalytic effect Effects 0.000 abstract 1
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 abstract 1
- 229940046817 hypophosphorus acid Drugs 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 16
- 239000003054 catalyst Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 238000007772 electroless plating Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- -1 EDTA tetrahydrate Chemical class 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 229940116357 potassium thiocyanate Drugs 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
Landscapes
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、樹脂基材上に密着
性の良い金属被膜を形成することのできる高密着性めっ
き方法およびこのために利用しうる無電解銅めっき液に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-adhesion plating method capable of forming a metal film having good adhesion on a resin substrate, and an electroless copper plating solution usable for this purpose.
【0002】[0002]
【従来の技術】近年、電子機器の傾向として小型化、軽
薄化、高速化、高性能化などに伴い、プリント配線板も
薄型化、多層化と高密度化の要求が高まっている。この
ような要求に対応するために現在、ビルドアップ工法が
注目され、絶縁層と導体層を一層毎に積み上げてその都
度層間を接続して多層配線板を作製している 。また、
多層配線板を作製する上で層間絶縁材料、ビアホールの
形成、ファインパターンの形成など、さまざまな要素技
術があり、その中の層間絶縁材料においては、絶縁層と
導体層の密着性が良いことは非常に重要である。2. Description of the Related Art In recent years, with the tendency of electronic equipment to become smaller, lighter, thinner, faster, and more sophisticated, there is an increasing demand for thinner printed wiring boards, multilayers and higher densities. At present, attention has been paid to the build-up method in order to respond to such a demand, and an insulating layer and a conductor layer are stacked for each layer, and the layers are connected each time to manufacture a multilayer wiring board. Also,
There are various element technologies such as interlayer insulating materials, formation of via holes, formation of fine patterns, etc. in manufacturing multilayer wiring boards. Among them, the interlayer insulating material has good adhesion between the insulating layer and the conductor layer. Very important.
【0003】一般にプリント配線板において、樹脂基材
上の導体層は、無電解及び電気めっきを順次行うことに
より形成されることが多く、例えば、金属銅層(導体
層)を形成するための方法は、樹脂基材表面の粗化、パ
ラジウム触媒付与、無電解銅めっき、電解銅めっきの順
で行われるのが一般的である。 そして、樹脂基材と銅
めっき層の密着性は、粗化により生じた樹脂基材上の微
細な凹孔内に無電解銅めっきが錨のように入り込むこと
による効果、いわゆるアンカー効果に依存するとされて
いる。In general, in a printed wiring board, a conductor layer on a resin substrate is often formed by sequentially performing electroless plating and electroplating. For example, a method for forming a metal copper layer (conductor layer) is often used. Is generally performed in the order of roughening the surface of the resin substrate, applying a palladium catalyst, electroless copper plating, and electrolytic copper plating. And, the adhesion between the resin substrate and the copper plating layer depends on the effect of the electroless copper plating penetrating into the fine recesses on the resin substrate caused by the roughening, the so-called anchor effect. Have been.
【0004】このように、現在、密着性を向上させるた
めに、絶縁層の表面を酸化剤で粗化し、アンカー効果を
得ることで密着強度を向上させているが、高い密着強度
を安定して得ることは難しく、プリント配線板作製の上
での隘路の一つとなっている。As described above, at present, in order to improve the adhesiveness, the surface of the insulating layer is roughened with an oxidizing agent to obtain an anchor effect, thereby improving the adhesive strength. It is difficult to obtain, and it is one of the bottlenecks in manufacturing printed wiring boards.
【0005】[0005]
【発明が解決しようとする課題】従って、簡便に、安定
して樹脂基材と導体層間の高い密着強度を得ることので
きる手段の開発が強く求められていた。Therefore, there has been a strong demand for the development of means that can easily and stably obtain a high adhesion strength between a resin substrate and a conductive layer.
【0006】[0006]
【課題を解決するための手段】本発明者は、プリント配
線板における、樹脂基材と導体層間の密着性に関連する
要素について、種々研究を行っていたところ、樹脂表面
に形成された微細凹孔の大きさと無電解銅めっきの銅上
での析出速度が密着性に大きな影響を与えていることを
見出した。The inventor of the present invention has conducted various studies on factors relating to the adhesion between the resin base material and the conductor layer in the printed wiring board. It was found that the pore size and the deposition rate of electroless copper plating on copper had a great influence on the adhesion.
【0007】すなわち、微細凹孔が小さすぎ、しかも、
銅上での無電解銅めっきの析出速度が速すぎるとブリッ
ジ状の析出が発生し、樹脂表面に形成された微細凹孔内
部にめっきが付き回ることなく成膜されるため、十分な
密着性が得られないことを知った。 一方、これを避
け、無電解銅めっきの付き回りを良くしようと、樹脂基
材を甘めに粗化すれば、当然のことながらアンカー効果
が失われる結果となる。That is, the fine concave hole is too small, and
If the deposition rate of electroless copper plating on copper is too high, bridge-like deposition occurs, and the film is formed without plating inside the fine concave holes formed on the resin surface, so sufficient adhesion I knew I couldn't get it. On the other hand, if this is avoided and the resin base material is roughened slightly to improve the coverage of the electroless copper plating, the anchor effect is naturally lost.
【0008】本発明者は、この矛盾を解消すべく更に研
究を重ねた結果、無電解銅めっきにおいて、最初にパラ
ジウム触媒上に析出した金属銅上には最早析出せず、残
ったパラジウム触媒上に選択的に析出するような無電解
銅めっき液を利用すれば、微細凹孔の内部にも無電解銅
が付き回り、十分なアンカー効果が得られるであろうこ
とを着想した。 そして、無電解銅めっき液の組成や配
合成分について種々検討した結果、このような目的に合
ったものを見出し、本発明を完成した。The inventor of the present invention has conducted further studies in order to resolve this contradiction. As a result, in electroless copper plating, no metal was first deposited on metal copper deposited on a palladium catalyst first, and the remaining palladium catalyst was not deposited. It has been conceived that if an electroless copper plating solution that selectively precipitates is used, the electroless copper will adhere to the inside of the fine concave hole and a sufficient anchor effect will be obtained. Then, as a result of various studies on the composition and the components of the electroless copper plating solution, they found one that meets such a purpose, and completed the present invention.
【0009】すなわち本発明の目的は、触媒化処理をし
た樹脂基材上に、銅上におけるめっき析出速度を0.5
μm/30分以下に制御した無電解銅めっきを施し、次
いで電気めっきを施す樹脂基材への高密着性めっき方法
を提供することである。[0009] That is, an object of the present invention is to reduce the rate of plating deposition on copper by 0.5 on a resin substrate that has been catalyzed.
An object of the present invention is to provide a method for plating a resin substrate on which electroless copper plating is performed at a rate of not more than μm / 30 minutes or less, followed by electroplating.
【0010】また本発明の他の目的は、上記方法に使用
される、銅イオン、銅イオンの錯化剤、還元剤としてホ
ルムアルデヒドまたはグリオキシル酸および析出制御剤
を含み、pHが12〜13の範囲である無電解銅めっき
液を提供することである。Another object of the present invention is to contain copper ion, a complexing agent of copper ion, formaldehyde or glyoxylic acid as a reducing agent, and a precipitation controlling agent, which are used in the above method, and have a pH in the range of 12 to 13. An electroless copper plating solution is provided.
【0011】更に、本発明の別の目的は、前記方法に用
いられる銅イオン、銅イオンの錯化剤としてのクエン酸
またはその塩および還元剤として次亜リン酸またはその
塩を含み、pH8.0〜11.0の範囲である無電解銅め
っき液を提供することである。Further, another object of the present invention is to contain copper ions used in the above-mentioned method, citric acid or a salt thereof as a complexing agent for copper ions and hypophosphorous acid or a salt thereof as a reducing agent, and have a pH of 8. An object of the present invention is to provide an electroless copper plating solution having a range of 0 to 11.0.
【0012】[0012]
【発明の実施の形態】本発明においては、無電解銅めっ
きがパラジウム触媒上に析出した銅めっき被膜上にはそ
れ以上析出せず、まだ銅が析出しないパラジウム触媒上
には通常の速度で析出するように調整することが重要で
ある。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, electroless copper plating does not further deposit on a copper plating film deposited on a palladium catalyst and deposits at a normal rate on a palladium catalyst on which copper has not yet deposited. It is important to adjust to
【0013】このためには、無電解銅めっきの銅上での
析出速度を0.5μm/30分以下に制御することが必
要である。For this purpose, it is necessary to control the deposition rate of electroless copper plating on copper to 0.5 μm / 30 minutes or less.
【0014】上記の条件を満たす無電解銅めっきであれ
ば、その浴組成等に関係なく本発明に利用することがで
きるが、このような無電解銅めっき液の例の一つとして
は、銅イオン、銅イオンの錯化剤、還元剤としてホルム
アルデヒドまたはグリオキシル酸および析出制御剤を含
み、pHが12〜13の範囲である無電解銅めっき液が
挙げられる。Any electroless copper plating that satisfies the above conditions can be used in the present invention irrespective of the bath composition and the like. One example of such an electroless copper plating solution is copper electroless plating. An electroless copper plating solution containing formaldehyde or glyoxylic acid and a precipitation controlling agent as a complexing agent and a reducing agent for ions and copper ions and having a pH in the range of 12 to 13 is exemplified.
【0015】この無電解銅めっき液に添加される析出制
御剤は、銅上への無電解銅めっきの析出を抑制するもの
であり、具体的には、チオ尿素、アリルチオ尿素、チオ
リンゴ酸、チオグリコール酸もしくはチオシアン酸また
はそれらの塩が挙げられる。この中でもチオ尿素、アリ
ルチオ尿素、チオリンゴ酸もしくはそれらの塩の効果が
もっとも優れている。 この析出抑制剤は、一般には0.
1〜1000ppm程度配合される。The precipitation control agent added to the electroless copper plating solution suppresses the deposition of electroless copper plating on copper. Specifically, thiourea, allylthiourea, thiomalic acid, thiomalic acid, Glycolic acid or thiocyanic acid or salts thereof may be mentioned. Among them, the effects of thiourea, allylthiourea, thiomalic acid or salts thereof are the most excellent. This precipitation inhibitor is generally used in an amount of 0.1.
About 1 to 1000 ppm is blended.
【0016】一方、上記無電解めっき液において、銅イ
オン源としては硫酸銅、塩化第二銅、硝酸銅等が、銅イ
オンの錯化剤としては、EDTA、酒石酸、リンゴ酸、
クエン酸、クワドロール、グリシン等やそれらの塩が挙
げられる。 これらは、いずれもホルムアルデヒドを還
元剤として使用する無電解銅めっき浴で一般に用いられ
ているものである。 また、これらの配合量も従来のホ
ルムアルデヒドを用いた無電解銅めっき浴と同程度でよ
い。On the other hand, in the above electroless plating solution, copper sulfate, cupric chloride, copper nitrate and the like are used as copper ion sources, and EDTA, tartaric acid, malic acid and the like are used as copper ion complexing agents.
Citric acid, quadrol, glycine and the like and salts thereof. These are all commonly used in electroless copper plating baths using formaldehyde as a reducing agent. The amounts of these components may be the same as those of a conventional electroless copper plating bath using formaldehyde.
【0017】上記の無電解銅めっき液の銅皮膜上への析
出速度は、ホルムアルデヒドを還元剤とし、pH12〜
13の一般的な無電解銅めっきと比べ約1/2以下であ
り、0.5μm/30分以下の析出速度を維持できるも
のである。The rate of deposition of the above electroless copper plating solution on the copper film is as follows: formaldehyde is used as a reducing agent;
In comparison with the conventional electroless copper plating of No. 13, the deposition rate is about 1/2 or less, and the deposition rate of 0.5 μm / 30 minutes or less can be maintained.
【0018】また、無電解銅めっきの銅上での析出速度
を0.5μm/30分以下に制御することが可能な無電
解銅めっき液の別の例としては、銅イオン、銅イオンの
錯化剤としてのクエン酸またはその塩および還元剤とし
て次亜リン酸またはその塩を含み、pH8.0〜11.0
の範囲である無電解銅めっき液を挙げることができる。Another example of an electroless copper plating solution capable of controlling the deposition rate of electroless copper plating on copper to 0.5 μm / 30 minutes or less includes copper ions and complex of copper ions. It contains citric acid or a salt thereof as an agent and hypophosphorous acid or a salt thereof as a reducing agent, and has a pH of 8.0 to 11.0.
And an electroless copper plating solution in the range of
【0019】この無電解めっき液の特徴は、銅イオンの
錯化剤としては、クエン酸またはその塩を利用すること
である。 このクエン酸またはその塩の配合量は、銅イ
オンに対するモル比で1〜10倍とすることが好まし
い。 銅イオンの錯化剤としてクエン酸以外の有機酸を
用いた次亜リン酸を還元剤とする無電解銅めっき浴は公
知であるが、これらを利用しても良い結果が得られな
い。The feature of this electroless plating solution is that citric acid or a salt thereof is used as a complexing agent for copper ions. The amount of the citric acid or salt thereof is preferably 1 to 10 times in molar ratio to copper ions. Electroless copper plating baths using an organic acid other than citric acid as a complexing agent for copper ions and using hypophosphorous acid as a reducing agent are known, but good results cannot be obtained by using them.
【0020】一方、この無電解銅めっき液の銅イオン源
としては、硫酸銅、塩化第二銅、硝酸銅等が挙げられる
が、これらは、いずれも次亜リン酸またはその塩を還元
剤として使用する無電解銅めっき浴で一般に用いられて
いるものである。 また、その配合量も通常の次亜リン
酸またはその塩を用いる無電解銅めっき浴と同程度でよ
い。On the other hand, examples of the copper ion source of the electroless copper plating solution include copper sulfate, cupric chloride, and copper nitrate, all of which use hypophosphorous acid or a salt thereof as a reducing agent. It is generally used in the electroless copper plating bath used. In addition, the compounding amount may be about the same as that of an ordinary electroless copper plating bath using hypophosphorous acid or a salt thereof.
【0021】この無電解銅めっき浴においては、次亜リ
ン酸塩が銅に対する自己触媒作用がないという性質を利
用するものであり、クエン酸またはその塩との組合せに
より、触媒であるパラジウム上に銅が析出するとそれ以
降の析出は起こらず、銅上の析出速度を0.5μm/3
0分以下に制御することもできるのである。This electroless copper plating bath utilizes the property that hypophosphite does not have an autocatalytic effect on copper, and is combined with citric acid or a salt thereof to form a catalyst on palladium as a catalyst. When copper is deposited, no further deposition occurs, and the deposition rate on copper is 0.5 μm / 3.
It can be controlled to 0 minutes or less.
【0022】本発明方法は、上記したような銅上の析出
速度を0.5μm/30分以下に制御した無電解銅めっ
き液を利用する以外は、従来と同様なプリント配線板作
製手段により実施することができる。 すなわち、プリ
ント配線基板を処理するための条件の一例を示せば次の
通りであり、無電解銅めっき後の電気めっきも、電気銅
めっきの他、電気はんだめっき、電気金めっき等所望の
ものを実施することができる。The method of the present invention is carried out by the same means for producing a printed wiring board as in the prior art, except that an electroless copper plating solution in which the deposition rate on copper is controlled to 0.5 μm / 30 minutes or less as described above is used. can do. That is, an example of conditions for processing a printed wiring board is as follows. Electroplating after electroless copper plating is not limited to copper electroplating, but may be performed using a desired material such as electrosolder plating or electrogold plating. Can be implemented.
【0023】[ 基 本 操 作 工 程 ] 膨 潤 工 程 (65〜85℃; 5〜15分) ↓ エッチング工程(65〜85℃; 5〜15分) ↓ 中 和 工 程 (65〜85℃; 5〜10分) ↓ 予備浸漬工程 (15〜30℃; 1〜 3分) ↓(水洗なし) 触媒付与工程 (15〜30℃; 2〜10分) ↓ 促 進 工 程 (15〜30℃; 2〜10分) ↓ 無電解銅めっき工程 ↓ 電解銅めっき工程 注)上記において、工程間に水洗を行う。[Basic operation process] Swelling process (65 to 85 ° C; 5 to 15 minutes) ↓ Etching process (65 to 85 ° C; 5 to 15 minutes) ↓ Chinese process (65 to 85 ° C) ; 5-10 minutes) ↓ Pre-soaking process (15-30 ° C; 1-3 minutes) ↓ (no water washing) Catalyst application process (15-30 ° C; 2-10 minutes) ↓ Promotion process (15-30 ° C) ; 2-10 minutes) ↓ Electroless copper plating process ↓ Electrolytic copper plating process Note) In the above, water washing is performed between processes.
【0024】[0024]
【作用】本発明方法により、樹脂基材と導体層間の高い
密着強度を得ることのできる理由は、無電解銅めっきの
銅上への析出が抑制されている結果、樹脂表面の微小凹
部内部も含め全ての触媒上に無電解銅めっき析出して十
分に付き回り、良好な密着性が得られるためである。The reason why the method of the present invention can obtain high adhesion strength between the resin base material and the conductor layer is that the deposition of electroless copper plating on copper is suppressed, so that the inside of minute concave portions on the resin surface is also reduced. This is because the electroless copper plating is deposited on all the catalysts, including the catalyst, and sufficiently adheres to the catalyst to obtain good adhesion.
【0025】なお、本発明で用いる析出制御剤は、めっ
き浴の自己分解を防止する目的で、添加される安定剤に
含まれるものではあるが、安定剤が常に析出制御剤とし
て利用できる訳ではない。また、安定剤が銅上における
無電解銅めっきの析出速度を制御することは知られてお
らず、更に析出速度の制御により密着性が向上すること
も知られていないことである。The precipitation control agent used in the present invention is included in the added stabilizer for the purpose of preventing self-decomposition of the plating bath. However, the stabilizer cannot always be used as the precipitation control agent. Absent. Further, it is not known that the stabilizer controls the deposition rate of electroless copper plating on copper, and it is not known that the adhesion is improved by controlling the deposition rate.
【0026】[0026]
【実施例】次に実施例を挙げ、本発明を更に詳しく説明
するが、本発明はこれら実施例等により何ら制約される
ものではない。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited by these examples.
【0027】実 施 例 1 析 出 抑 制 作 用 の 検 討 :いくつかの化合物につ
いて、銅皮膜上への銅析出に対し、どのような影響があ
るかどうかを調べた。試験は、下記のホルマリンを還元
剤とする基本無電解銅めっき浴組成に表1に示す成分お
よび濃度の添加剤を加えたものに、銅張積層板を浸漬
し、下記条件で銅めっき層の析出する速度を測定するこ
とにより行った。 この結果も表1に示す。Example 1 Examination of the effect of suppressing precipitation: The effect of some compounds on the deposition of copper on a copper film was examined. The test was performed by immersing the copper-clad laminate in a composition obtained by adding the components and concentrations shown in Table 1 to the basic electroless copper plating bath composition using formalin as a reducing agent, and forming the copper plating layer under the following conditions. This was done by measuring the rate of deposition. The results are also shown in Table 1.
【0028】[ 基本無電解めっき浴組成 ] 硫酸銅五水和物 0.03M EDTA・四水和物 0.24M ホルマリン 0.2M pH 12.5[Basic electroless plating bath composition] Copper sulfate pentahydrate 0.03M EDTA tetrahydrate 0.24M formalin 0.2M pH 12.5
【0029】[ 無電解めっき条件 ] 浴 温 60℃ 攪 拌 空気攪拌[Electroless plating conditions] Bath temperature 60 ° C Stirring Air stirring
【0030】[0030]
【表1】 [Table 1]
【0031】この結果から明らかなように、チオ尿素、
アリルチオ尿素、チオリンゴ酸、チオグリコール酸、チ
オシアン酸カリウム等では、明らかに無電解銅めっきの
析出速度が低下し、基本無電解めっき組成で行った場合
の半分以下で、本発明方法の条件である0.5μm/3
0分の条件を満たしていた。 これに対し、2−メルカ
プトベンゾチアゾールやポリビニルイミダゾールを添加
した場合は、析出速度が速くなっていた。As is apparent from the results, thiourea,
In the case of allylthiourea, thiomalic acid, thioglycolic acid, potassium thiocyanate, etc., the deposition rate of electroless copper plating clearly decreases, and is less than half that of the case of performing the basic electroless plating composition, which is the condition of the method of the present invention. 0.5 μm / 3
The condition of 0 minutes was satisfied. In contrast, when 2-mercaptobenzothiazole or polyvinylimidazole was added, the deposition rate was high.
【0032】実 施 例 2 密 着 強 度 試 験 :大きさが20mm×50mmのF
R−4基板上に、エポキシ系絶縁ワニス(フォトビア形
成材料:JSR(株)製ILD−300)を塗布、硬化
せしめたものをテストピースとして用いた。試験は、下
記処理工程に従い、まず、この基材表面を粗化した。
次に、触媒付与、密着促進した後、実施例1の基本無電
解銅めっき組成に表2に示す種類および濃度の析出制御
剤を加えた無電解銅めっき浴に30分間浸漬した。 更
に、これに硫酸銅めっき浴(荏原ユージライト(株)、
キューブライトTHプロセス)で、約30μmの膜厚と
なるまで電気めっきを行った。Example 2 Adhesion strength test: F having a size of 20 mm × 50 mm
An epoxy insulating varnish (photo via forming material: ILD-300 manufactured by JSR Corporation) was applied and cured on an R-4 substrate as a test piece. In the test, the substrate surface was first roughened according to the following processing steps.
Next, after applying a catalyst and promoting adhesion, the substrate was immersed for 30 minutes in an electroless copper plating bath obtained by adding the type and concentration of a precipitation control agent shown in Table 2 to the basic electroless copper plating composition of Example 1. Furthermore, a copper sulfate plating bath (EBARA Eugerite Co., Ltd.)
Electroplating was performed by a Cubelite TH process) to a thickness of about 30 μm.
【0033】得られた銅めっき皮膜の密着強度は、90
度引き剥がし試験によって密着を測定した。 密着強度
は、インストロンテスターによりクロスヘッドスピード
3mm/sec.で垂直に引き剥がし測定した。 各試料
の密着強度も表2中に示す。なお、樹脂又は銅箔の引き
剥がし面の状態は、走査型電子顕微鏡(SEM)により
観察した。The adhesion strength of the obtained copper plating film is 90
The adhesion was measured by a peel test. The adhesion strength was measured by peeling off vertically at a crosshead speed of 3 mm / sec with an Instron tester. Table 2 also shows the adhesion strength of each sample. The state of the peeled surface of the resin or the copper foil was observed with a scanning electron microscope (SEM).
【0034】[ 処 理 工 程 ] 膨 潤 工 程 (75℃;10分) ↓ エッチング工程(75℃;10分) ↓ 中 和 工 程 (75℃;10分) ↓ 予備浸漬工程 (常温;2分) ↓(水洗なし) 触媒付与工程 (常温;5分) ↓ 促 進 工 程 (常温;5分) ↓ 無電解銅めっき工程(60℃;30分) ↓ ベーキング工程(1)(120℃;60分) ↓ 電解銅めっき工程(25℃;2A/dm2;75分) ↓ ベーキング工程(2)(150℃;120分) 注)上記において、工程間に水洗を行う。[Processing process] Swelling process (75 ° C .; 10 minutes) ↓ Etching process (75 ° C .; 10 minutes) ↓ Middle process (75 ° C .; 10 minutes) ↓ Pre-soaking process (room temperature; 2) Min) ↓ (no water washing) Catalyst application process (normal temperature; 5 minutes) ↓ Promotion process (normal temperature; 5 minutes) ↓ Electroless copper plating process (60 ° C; 30 minutes) ↓ Baking process (1) (120 ° C; 60 minutes) ↓ Electrolytic copper plating step (25 ° C .; 2 A / dm 2 ; 75 minutes) ↓ Baking step (2) (150 ° C .; 120 minutes) Note) In the above, water washing is performed between steps.
【0035】[0035]
【表2】 [Table 2]
【0036】この結果、析出制御剤を用いた無電解銅め
っきによれば、無添加のものに比べ、密着強度が向上す
ることが明らかとなった。このことから、導体層を形成
するために施す無電解めっきは、樹脂に形成されたエッ
チング痕の底部まで均一に成膜されればアンカー効果に
よって密着力の向上すること、およびこのためには析出
速度を制御する必要があることが示された。As a result, it was found that the electroless copper plating using the precipitation controlling agent improved the adhesion strength as compared with the non-added copper plating. From this, the electroless plating applied to form the conductor layer can improve the adhesion by the anchor effect if the film is formed uniformly to the bottom of the etching mark formed on the resin, and for this purpose, the It was shown that the speed needed to be controlled.
【0037】実 施 例 3 下記めっき浴組成を利用する以外は、実施例2と同じめ
っき条件、工程によりエポキシ樹脂基材上に無電解銅め
っきおよび硫酸銅めっきを行った。得られた銅めっき皮
膜の密着強度も実施例2と同様にして測定したところ、
1.0kg/cmであった。Example 3 Electroless copper plating and copper sulfate plating were performed on an epoxy resin substrate by the same plating conditions and steps as in Example 2 except that the following plating bath composition was used. When the adhesion strength of the obtained copper plating film was also measured in the same manner as in Example 2,
It was 1.0 kg / cm.
【0038】[めっき浴組成] 硫酸銅五水和物 0.032M クエン酸ナトリウム 0.052M 次亜リン酸ナトリウム 0.54M ホウ酸 0.50M pH 9.0[Plating bath composition] Copper sulfate pentahydrate 0.032 M sodium citrate 0.052 M sodium hypophosphite 0.54 M boric acid 0.50 M pH 9.0
【0039】[0039]
【発明の効果】本発明によれば、無電解銅めっきの浴管
理を適切に行うことにより、樹脂基材上に密着性の良い
金属被膜を形成することができるため、多層配線板等の
プリント配線板を作製する上で極めて有利なものであ
る。 以 上According to the present invention, since a metal film having good adhesion can be formed on a resin base material by appropriately performing a bath control of the electroless copper plating, it is possible to print a multilayer wiring board or the like. This is extremely advantageous in manufacturing a wiring board. that's all
───────────────────────────────────────────────────── フロントページの続き (72)発明者 本間 英夫 神奈川県横浜市磯子区杉田8−1−60 (72)発明者 石橋 純一 神奈川県横浜市保土ヶ谷区峰沢町9−2− 307 (72)発明者 鈴木 雅子 東京都中央区築地2丁目11番24号 ジェイ エスアール株式会社内 (72)発明者 丸山 恵美 神奈川県藤沢市善行坂1−1−6 荏原ユ ージライト株式会社内 (72)発明者 藤波 知之 神奈川県藤沢市善行坂1−1−6 荏原ユ ージライト株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideo Honma 8-1-60 Sugita, Isogo-ku, Yokohama-shi, Kanagawa Prefecture (72) Inventor Junichi Ishibashi 9-2-307, Minesawa-cho, Hodogaya-ku, Yokohama-shi, Kanagawa Prefecture (72) Invention Person Masako Suzuki 2-11-24 Tsukiji, Chuo-ku, Tokyo Inside JSR Co., Ltd. (72) Inventor Emi Maruyama 1-1-6 Yoshiyukizaka, Fujisawa City, Kanagawa Prefecture Inside Ebara Ujilight Inc. (72) Inventor Tomoyuki Fujinami 1-1-6 Yoshiyukizaka, Fujisawa-shi, Kanagawa Ebara Ujilight Inc.
Claims (7)
おけるめっき析出速度を0.5μm/30分以下に制御
した無電解銅めっきを施し、次いで電気めっきを施すこ
とを特徴とするに樹脂基材への高密着性めっき方法。1. An electroless copper plating method in which a plating deposition rate on copper is controlled to 0.5 μm / 30 minutes or less on a catalyzed resin substrate, followed by electroplating. High adhesion plating method to resin substrate.
の錯化剤、還元剤としてホルムアルデヒドまたはグリオ
キシル酸および析出制御剤を含み、pHが12〜13の
範囲である無電解銅めっき液を用いて行う請求項第1項
記載の樹脂基材への高密着性めっき方法。2. An electroless copper plating solution containing copper ions, a complexing agent for copper ions, formaldehyde or glyoxylic acid as a reducing agent and a precipitation controlling agent, and having a pH in the range of 12 to 13. 2. The method for plating a resin substrate with high adhesion according to claim 1, wherein the method is carried out using the method.
素、チオリンゴ酸、チオグリコール酸、チオシアン酸及
びそれらの塩から選ばれた化合物である請求項第2項記
載の樹脂基材への高密着性めっき方法。3. The high adhesion to a resin substrate according to claim 2, wherein the precipitation inhibitor is a compound selected from thiourea, allylthiourea, thiomalic acid, thioglycolic acid, thiocyanic acid and salts thereof. Plating method.
の錯化剤としてのクエン酸またはその塩および還元剤と
して次亜リン酸またはその塩を含み、pH8.0〜11.
0の範囲である無電解銅めっき液を用いて行う請求項第
1項記載の樹脂基材への高密着性めっき方法。4. The electroless copper plating contains copper ions, citric acid or a salt thereof as a complexing agent for copper ions and hypophosphorous acid or a salt thereof as a reducing agent, and has a pH of 8.0 to 11.
2. The method for plating a resin substrate with high adhesion according to claim 1, wherein the method is performed using an electroless copper plating solution having a range of 0.
してホルムアルデヒドまたはグリオキシル酸および析出
制御剤を含み、pHが12〜13の範囲である無電解銅
めっき液。5. An electroless copper plating solution containing copper ions, a complexing agent for copper ions, formaldehyde or glyoxylic acid as a reducing agent and a precipitation controlling agent, and having a pH in the range of 12 to 13.
素、チオリンゴ酸、チオグリコール酸及びチオシアン酸
並びにそれらの塩から選ばれた化合物である請求項第5
項記載の無電解銅めっき液。6. The method according to claim 5, wherein the precipitation inhibitor is a compound selected from thiourea, allylthiourea, thiomalic acid, thioglycolic acid, thiocyanic acid and salts thereof.
Electroless copper plating solution according to the item.
エン酸またはその塩および還元剤として次亜リン酸また
はその塩を含み、pH8.0〜11.0の範囲である無電
解銅めっき液。7. An electroless copper plating containing copper ions, a citric acid or a salt thereof as a complexing agent for copper ions and hypophosphorous acid or a salt thereof as a reducing agent, and having a pH in the range of 8.0 to 11.0. liquid.
Priority Applications (1)
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JP07126698A JP3276919B2 (en) | 1998-03-06 | 1998-03-06 | High adhesion plating method for resin substrate and copper plating solution used for the method |
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---|---|---|---|
JP07126698A JP3276919B2 (en) | 1998-03-06 | 1998-03-06 | High adhesion plating method for resin substrate and copper plating solution used for the method |
Publications (2)
Publication Number | Publication Date |
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JPH11256349A true JPH11256349A (en) | 1999-09-21 |
JP3276919B2 JP3276919B2 (en) | 2002-04-22 |
Family
ID=13455761
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JP07126698A Expired - Fee Related JP3276919B2 (en) | 1998-03-06 | 1998-03-06 | High adhesion plating method for resin substrate and copper plating solution used for the method |
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Cited By (7)
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---|---|---|---|---|
WO2001046494A1 (en) * | 1999-12-22 | 2001-06-28 | Ebara Corporation | Electroless plating solution and method of forming wiring with the same |
WO2001053569A1 (en) * | 2000-01-20 | 2001-07-26 | Nikko Materials Company, Limited | Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating |
WO2005038088A1 (en) * | 2003-10-20 | 2005-04-28 | Kansai Technology Licensing Organization Co., Ltd. | Electroless copper plating liquid and method for manufacturing wiring board using same |
EP1876262A1 (en) * | 2006-07-07 | 2008-01-09 | Rohm and Haas Electronic Materials, L.L.C. | Environmentally friendly electroless copper compositions |
JP2008095140A (en) * | 2006-10-11 | 2008-04-24 | Ishihara Chem Co Ltd | Copper deposition-suppressing agent for wafer or substrate and copper filling method |
DE102007047492A1 (en) * | 2007-10-04 | 2009-04-16 | Elantas Gmbh | Wire enamels with good adhesion to electrical conductors |
JP4526621B2 (en) * | 1999-10-07 | 2010-08-18 | 株式会社イノアックコーポレーション | Method of metal plating on electrical non-conductor |
-
1998
- 1998-03-06 JP JP07126698A patent/JP3276919B2/en not_active Expired - Fee Related
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4526621B2 (en) * | 1999-10-07 | 2010-08-18 | 株式会社イノアックコーポレーション | Method of metal plating on electrical non-conductor |
WO2001046494A1 (en) * | 1999-12-22 | 2001-06-28 | Ebara Corporation | Electroless plating solution and method of forming wiring with the same |
WO2001053569A1 (en) * | 2000-01-20 | 2001-07-26 | Nikko Materials Company, Limited | Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating |
WO2005038088A1 (en) * | 2003-10-20 | 2005-04-28 | Kansai Technology Licensing Organization Co., Ltd. | Electroless copper plating liquid and method for manufacturing wiring board using same |
EP1876262A1 (en) * | 2006-07-07 | 2008-01-09 | Rohm and Haas Electronic Materials, L.L.C. | Environmentally friendly electroless copper compositions |
JP2008095140A (en) * | 2006-10-11 | 2008-04-24 | Ishihara Chem Co Ltd | Copper deposition-suppressing agent for wafer or substrate and copper filling method |
DE102007047492A1 (en) * | 2007-10-04 | 2009-04-16 | Elantas Gmbh | Wire enamels with good adhesion to electrical conductors |
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