JPH10242344A - Semiconductor device for power - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the leakage of melted molding resin from inside a cavity toward a terminal for external connection in molding by forming a closing face with which a mold is brought into pressure contact, in a synthetic resin- made block formed at the base of the terminal for external connection through which the terminal for external connection passes. SOLUTION: In a semiconductor device for power, closing faces with which an upper die is brought into pressure contact are formed in an insulating blocks 3 of a connector 3 for power and in an insulating block 4b of a connector 4 for signal and the surface of the resist serves as a bottom face of the die. Due to this structure, the insulating blocks 3b, 4b and the resist substantially serve as a sealing material and therefore melted sealing resin 5 can be prevented from leaking outside from in a cavity in molding. As a result, even if a hole for storing a terminal is made large in the upper die 21 to allow a hole making work to be done easily, there is no burrs appearing in the periphery of a terminal 3a and in a face of the upper die 21 which would be brought into pressure contact with the resist.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device in which a power semiconductor chip is mounted on a substrate and sealed with a molding resin.

[0002]

2. Description of the Related Art Conventionally, among power semiconductor devices used for controlling a large current by a motor controller or the like, a semiconductor chip is housed in a box-shaped case, and the case is filled with a sealing resin. It has a structure. The semiconductor chip is fixed together with an external connection terminal to a ceramic insulating substrate having a copper circuit formed by metallization, and is connected to the external connection terminal by a bonding wire. Further, the case is formed by covering a metal base plate to which the insulating substrate is fixed with a box lid-shaped case body and fixing the case body. The terminal for external connection penetrates through the case body.

[0003] The sealing resin is composed of a silicon gel covering the semiconductor chip and the bonding wires, and an epoxy resin covering the silicon gel. To fill the case with these two types of resin materials, first, silicon gel is injected into the case and cured by heating the entire case, and then the epoxy resin in a molten state is placed on the upper side of the silicon gel in the case. And solidified by the same heat treatment as described above.

[0004]

However, in the conventional power semiconductor device configured as described above, heat treatment must be performed twice in order to cure the silicon gel and the epoxy resin, respectively. There was a problem that it took time. Further, since a case is formed by a plurality of members and two kinds of resin materials are injected into the case, there is also a problem that the number of steps and the number of parts are increased.

Such a problem can be solved by adopting a structure in which the semiconductor chip mounting portion is sealed with a mold resin. That is, the semiconductor chip and the terminals for external connection are mounted on a ceramic insulating substrate, and the semiconductor chip assembly in a state where the insulating substrate is fixed to a metal base plate is loaded into a mold, and the semiconductor chip assembly has What is necessary is just to cover a chip mounting part with mold resin. Note that a cavity for receiving the external connection terminal is formed in a cavity of the mold for loading the assembly.

However, when the structure in which the semiconductor chip mounting portion is resin-sealed with the mold resin as described above is employed, burrs are likely to occur at portions where the external connection terminals protrude from the mold resin. The burrs are formed when the mold resin in a molten state enters a gap formed between the external connection terminal and the inner wall surface of the recess.

The generation of burrs as described above can be prevented by reducing the gap. However, in order to reduce the gap, it is necessary to maintain the mounting positions of the plurality of external connection terminals on the board with high precision, which increases the cost for assembling, and further reduces the concave portion of the mold. Since the external connection terminals must be formed with high precision so as to be in close contact over the entire area of the surface, the manufacturing cost of the mold is also increased. The burrs may be formed between the mating surface of the mold and the substrate in addition to being formed around the external connection terminals as described above. And the mating surface of the mold must be formed flat with high precision.

The present invention has been made in order to solve such a problem, and a resin sealing portion of a high power semiconductor device is formed of a molding resin to reduce the number of assembly steps and the number of parts. It is an object of the present invention to prevent the occurrence of burrs without attaching a terminal for external connection to a substrate with high accuracy or performing high-precision processing on a mold.

[0009]

In the power semiconductor device according to the present invention, a synthetic resin block through which the external connection terminal penetrates is provided at the base of the external connection terminal. A mold clamping surface is formed.

According to the present invention, since the synthetic resin block functions substantially as a sealing material, the mold resin in a molten state does not leak from the inside of the cavity to the external connection terminals during molding.

According to another aspect of the present invention, there is provided a power semiconductor device comprising: a substrate on which a semiconductor chip is mounted; a metal substrate main body; a conductor pattern formed on the substrate main body via an insulating film;
And a resist film covering the conductor pattern. The surface of the resist film is a mold clamping surface against which a mold is pressed.

According to the present invention, since the resist film substantially functions as a sealing material, the mold resin in a molten state does not leak out of the cavity during molding.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION

First Embodiment Hereinafter, an embodiment of a power semiconductor device according to the present invention will be described in detail with reference to FIGS. 1A and 1B show a power semiconductor device according to the present invention. FIG. 1A is a right side view, FIG. 1B is a plan view, FIG. 1C is a left side view, and FIG. Is a front view. 2A and 2B are views showing a state before the resin sealing of the power semiconductor device according to the present invention. FIG. 2A is a right side view, FIG. 2B is a plan view, and FIG. 2C is a left side view. FIG. 3D is a front view.

FIGS. 3A and 3B show a power supply connector, wherein FIG. 3A is a front view, FIG. 3B is a right side view, and FIG. 3C is a bottom view. 4 (a) is a front view, FIG. 4 (b) is a right side view, FIG. 4 (c) is a left side view, and FIG. 4 (d) is a bottom view. . FIG. 5 is a diagram showing a state after resin sealing of the power semiconductor device according to the present invention.
5A is a right side view, FIG. 5B is a plan view, FIG. 5C is a left side view, and FIG. 5D is a bottom view. FIG. 6 is a sectional view taken along line VI-VI in FIG. 7 is a bottom view showing the cavity of the upper mold, FIG. 8 is a plan view showing the substrate loading portion of the lower mold, and FIG. 9 is a cross-sectional view showing a state in which the sealing resin is injected into the cavity.

In these figures, reference numeral 1 denotes a power semiconductor device according to this embodiment. This semiconductor device 1
Is formed by mounting the power supply connector 3 on one side of the substrate 2 and mounting the signal connector 4 on the other side, and molding a sealing resin 5 made of epoxy resin by transfer molding. ing. The substrate 2
Is, as shown in FIG. 6, a substrate body 2 made of aluminum alloy.
a, an insulating film 6 formed over the entire upper surface of the substrate body 2a, a conductor pattern 7 formed on the insulating film 6, a resist 8 covering the conductor pattern 7, and the like.

The conductor pattern 7 is formed by fixing a copper foil on the insulating film 6 and etching it into a predetermined circuit shape. The resist 8 is applied on the substrate 2 using a conventionally known synthetic resin, and covers the entire upper surface of the substrate 2 in a state where only the component mounting portion of the conductor pattern 7 is exposed. ing. The application of the resist 8 on the substrate 2 is performed such that the resist surface is a flat surface parallel to the main surface of the substrate main body 2a.

As shown in FIG. 2, the surface mount type electronic components 10 such as the connectors 3 and 4 and the semiconductor chip 9 and chip type resistors are soldered 11 to the component mounting portions of the conductor pattern 7 as shown in FIG. ). In this embodiment, the surface electrodes of the semiconductor chip 9 are connected to the component mounting portions of the conductor pattern 7 by bonding wires 12 (see FIG. 2).

As shown in FIGS. 3 and 4, the power supply connector 3 and the signal connector 4 have a plurality of terminals 3a, 4a.
And synthetic resin insulating blocks 3b and 4b that hold the terminals 3a and 4a. In this embodiment, the terminals 3a, 4a and the insulating blocks 3b, 4b are formed integrally by insert molding. The terminals 3a and 4a constitute an external connection terminal according to the present invention. In this embodiment, the terminals 3a,
Reference numeral 4a penetrates the insulating blocks 3b and 4b, and one protruding end is soldered to the conductor pattern 7 of the substrate 2. The terminal 3a of the power connector 3 is formed in a U-shaped cross section by bending the other protruding end protruding above the insulating block 3b toward the inside of the semiconductor device as shown in FIG. 6 after resin sealing. doing. To facilitate this bending, the terminal 3a is formed with a lateral groove 3c as shown in FIG. 3 (b).

In FIG. 6, a terminal 3 having a U-shaped cross section is shown.
Reference numeral 13 located inside a denotes a nut for connecting a crimp terminal (not shown) of a power supply wiring (not shown) to the terminal 3a. The nut 13 is fitted in a hexagonal hole 5 a of the sealing resin 5. That is, the power supply wiring can be connected to the terminal 3a by screwing the bolt (not shown) to the nut 13 while penetrating the crimp terminal of the power supply wiring and the terminal 3a.

The insulating block 3 of the connectors 3 and 4
b and 4b are two fixing screws 14 as shown in FIG.
To the substrate 2. The insulating block 3 b of the power supply connector 3 has an upper surface 15 through which the terminal 3 a passes, formed flat so as to be parallel to the main surface of the substrate 2. The side surface 16 of the insulating block 3b is formed flat and slightly inclined. The inclination direction is set so that the formation width of the insulating block 3b gradually decreases toward the upper side of the insulating block 3b.

The insulating block 4b of the signal connector 4
The upper surface 17 is formed so as to be parallel to the main surface of the substrate 2, and a ridge 18 extending from one side of the upper surface 17 to the other side and projecting upward is integrally formed. The side surface 19 of the insulating block 4b is also formed flat and slightly inclined. The inclination direction of the side surface 19 is set so that the formation width of the insulating block 4b is gradually reduced toward the upper side of the insulating block 4b. The reason why the side surfaces 16 and 19 of the both insulating blocks 3b and 4b are inclined in this way is to bring the side surfaces 16 and 19 into close contact with the upper die described later in the mold clamping process.

The upper surface 1 of these insulating blocks 3b, 4b
5, 17 and side surfaces 16, 19 constitute the mold clamping surface according to the present invention. The surface of the resist 8 constitutes a mold clamping surface according to another invention.

The sealing resin 5 is buried in the semiconductor chip 9 and the surface mount component 10 mounted on the substrate 2, the bonding wires 12, and the terminals 3a and 4a of the connectors 3 and 4 connected to the substrate 2 and the like. As sealed
It is molded on the substrate 2. The molding of the sealing resin 5 on the substrate 2 is performed by using a mold 20 shown in FIGS.

The mold 20 is an upper mold 2 shown in FIG.
1 and a lower mold 22 shown in FIG. 8, and has a structure in which the substrate 2 on which components are mounted is clamped between the upper and lower molds 21 and 22. Although not shown, the upper mold 21 and the lower mold 22 are connected to a molding machine that moves one of them in the vertical direction with respect to the other and closes and opens the mold. An extruding pin for releasing the substrate 2 later is attached.

A cavity 23 for molding the sealing resin 5 is formed on the lower surface of the upper mold 21, and a concave portion 24 for fitting the substrate 2 is formed on the upper surface of the lower mold 22. . The cavity 23 is formed between a power connector housing 25 that houses the power connector 3, a signal connector housing 26 that houses the signal connector 4, and a space between these housings 25 and 26. And a sealing resin molded part 27.

The power supply connector accommodating portion 25 has a wall surface such that the upper surface 15 and the side surface 16 of the power supply connector 3 are pressed against each other in a state of surface contact. The power connector housing 25 has terminals 3a of the power connector 3.
The hole 25a for accommodating is formed. This hole 25
The opening a has a size sufficiently larger than the terminal 3a so that the terminal 3a can be easily inserted. In the conventional mold, the hole wall surface is brought into close contact with the terminal. However, the upper mold 21 does not have to do so.

The signal connector housing portion 26 has a wall surface so that the upper surface 17 and the side surface 19 of the signal connector 4 are pressed against each other in a state of surface contact. The surface of the wall surface on which the upper surface 17 of the signal connector 4 is in pressure contact is the lower portion 26a with which the tip of the ridge 18 of the signal connector 4 is in pressure contact.
And a high portion 26b at which a portion inside the semiconductor device from the ridge 18 is pressed against.

The sealing resin molded portion 27 is formed so as to be deeper than the power connector housing 25 and the signal connector housing 26, and a gate 27a is formed at one central position. As shown in FIGS. 7 and 9, a hexagonal hole 5 into which the nut 13 is fitted is provided at an end of the sealing resin molded portion 27 on the power connector housing portion 25 side.
A nest 28 for forming a is attached. As shown in FIG. 9, the nest 28 is fitted and fixed to the upper mold 21 to form a plurality of hexagonal pillars 28a at the tip, and opens downward between the hexagonal pillars 28a. A concave groove 28b is formed. This concave groove 28b is
It is formed so as to be continuous with the concave portion 27b formed in the sealing resin molded portion 27. These grooves 28b and recesses 2
By solidifying the sealing resin flowing into 7b, a partition wall indicated by reference numeral 29 in FIG. 1 is formed. This partition wall 29
Is provided to insulate a plurality of terminals 3a arranged in parallel.

Next, a procedure for manufacturing the power semiconductor device 1 according to this embodiment will be described. Power semiconductor device 1
First, as shown in FIG. 2, the substrate 2
A semiconductor chip 9, a surface mount component 10, a power connector 3, and a signal connector 4 are mounted on the semiconductor chip 9, and the surface electrodes of the semiconductor chip 9 are connected to the conductor patterns 7 of the substrate 2 by bonding wires 12.

Then, the substrate 2 is loaded into a mold 20 such that the substrate main body 2 a fits into the recess 24 of the lower mold 22 and the mounting component faces the cavity 23 of the upper mold 21. The upper and lower molds 21 and 22 clamp the mold by pressing it vertically. At this time, the upper surfaces 15, 17 and side surfaces 16, 19 of the insulating blocks 3b, 4b of the power supply connector 3 and the signal connector 4 and the resist 8 on the surface of the substrate 2 are pressed against the upper mold 21. The pressure contact range is outside the cavity formation range indicated by a two-dot chain line in FIG.

That is, when the mold is clamped, the insulating blocks 3b, 4b and the resist 8 made of synthetic resin are slightly elastically deformed and come into close contact with the upper mold 21 without any gap.

After the mold is clamped in this way, the sealing resin 5 in a molten state is injected into the cavity 23 from the gate 27a of the upper mold 21 as shown in FIG. At this time, since the sealing properties are enhanced by the insulating blocks 3b and 4b and the resist 8 as described above, the sealing resin 5 does not leak from the cavity 23. After injecting the sealing resin 5, the entire mold 20 is heated to the solidification temperature of the sealing resin 5 to solidify the sealing resin 5, and the substrate 2 is released from the mold 20.

FIG. 5 shows the substrate 2 after release. As shown in the figure, after the resin sealing, a part of the insulating blocks 3 b and 4 b of the power supply connector 3 and the signal connector 4 is buried in the sealing resin 5. Further, a hexagonal hole 5 a for fitting the nut 13 and a partition wall 29 are formed in the sealing resin 5.

Then, the nut 13 is fitted into the hexagonal hole 5a and the terminal 3a of the power supply connector 3 is bent as shown in FIG. 1, thereby completing the manufacturing process of the power semiconductor device 1. The power semiconductor device 1 thus manufactured
Are sealing resin 5 and insulating blocks 3b of connectors 3 and 4,
4b forms a resin sealing portion.

Therefore, in the power semiconductor device 1, a mold clamping surface against which the upper mold 21 is pressed against the insulating blocks 3b, 4b of the power supply connector 3 and the signal connector 4 is formed, and the surface of the resist 8 is formed. Because of the mold clamping surfaces, the insulating blocks 3b, 4b and the resist 8 substantially function as a sealing material, and prevent the sealing resin 5 in a molten state from leaking out of the cavity 23 during molding. be able to.

Therefore, even if the terminal accommodating hole 25a in the upper mold 21 is made large so as to be easily formed, no burrs are formed around the terminal 3a, and the upper mold 2 is not burred.
Even if the mating surface to be pressed against the resist 8 in 1 is not formed flat with high precision, no burrs will occur here.

Second Embodiment A power supply connector as shown in FIGS.
A structure in which terminals are assembled to the insulating block can be adopted. 10A and 10B are views showing a power supply connector portion of the power semiconductor device, wherein FIG. 10A is a plan view, FIG. 10B is a left side view, and FIG. 10C is a front view. FIG. 11 is a diagram showing a power supply connector portion in a state where the power supply connector is released from a mold.
2A is a plan view, FIG. 2B is a left side view, and FIG. 1C is a front view. 12A and 12B are views showing a power supply connector portion in a state where the power supply connector is mounted on the board. FIG. 12A is a plan view, FIG. 12B is a left side view, and FIG. 12C is a front view. is there.

FIGS. 13A and 13B show the terminals of the power supply connector. FIG. 13A is a plan view, FIG. 13B is a front view, and FIG. 13C is a right side view. 14 (a) is a plan view, FIG. 14 (b) is a front view, FIG. 14 (c) is a right side view, and FIG. 14 (d) is a left side view. FIG. 7 (e) is a bottom view. 15A and 15B show a power supply connector. FIG. 15A is a plan view and FIG.
Is a front view, (c) is a right side view, (d) is a left side view, and (e) is a bottom view. In these drawings, the same or equivalent members as those described in FIGS. 1 to 9 are denoted by the same reference numerals, and detailed description is omitted.

The power supply connector 3 of the power semiconductor device 1 shown in FIG. 10 is formed by attaching a plurality of terminals 3a to an insulating block 3b. The terminal 3a is formed in an L-shaped cross section as shown in FIG.
b is a terminal mounting groove 3 on the left side and the bottom as shown in FIG.
1 are formed. The power supply connector 3 is assembled by fitting the terminal 3a into the terminal mounting groove 31 as shown in FIG. Note that, also in the insulating block 3b, the upper surface 15 and the side surface 16 are formed flat so that an upper mold (not shown) is pressed against the surface in a state of surface contact.

The power supply connector 3 is fixed to the board 2 by soldering the terminal 3a to a conductor pattern (not shown) of the board 2 and connecting two fixing screws 14 penetrating the insulating block 3b to the board. 2 by screwing it. The signal connector of the power semiconductor device 1 and a mold used for molding the sealing resin 5 have the same structure as that used in the first embodiment. is there.

The power supply connector 3 formed as described above
Is used, since the insulating block 3b functions substantially as a sealing material, it is possible to prevent the generation of burrs around the terminal 3a. Therefore, the same effect as in the first embodiment can be obtained. It works.

Third Embodiment In using the insulating block of the connector substantially as a sealing material, a structure as shown in FIGS. 16 and 17 can be adopted. 16A and 16B show a power semiconductor device in which only the upper surface of an insulating block is a mold clamping surface. FIG. 16A is a right side view, FIG. 16B is a plan view, and FIG. FIG. 3D is a longitudinal sectional view. 17A and 17B are views showing a state in which the connector is attached to the board. FIG. 17A is a right side view, FIG. 17B is a plan view, and FIG.
FIG. 4D is a front view. In these figures, the same or equivalent members as those described in FIGS. 1 to 15 are denoted by the same reference numerals, and detailed description is omitted.

In the power semiconductor device 1 shown in FIG. 16, the sealing resin 5 is molded using the upper surfaces 15 and 17 of the power connector 3 and the signal connector 4 as mold clamping surfaces. In the signal connector 4 shown in this embodiment, the terminal 4a is
(D) As shown in FIG.
Solder to a conductor pattern (not shown)
The upper side protrudes upward from the upper surface 17 of the insulating block 4b.

A molding die (not shown) for molding the sealing resin 5 of the power semiconductor device 1 has a structure such that the entire insulating blocks 3b and 4b of the connectors 3 and 4 are housed in the cavity. Form. Also, terminals 3 extending upward from the insulating blocks 3b, 4b are provided in the cavities.
a, a prism having a recess for allowing the insertion of a, 4a. This prismatic portion has an insulating block 3b, 4
It is formed so as to be in pressure contact with the upper surfaces 15, 17 of b. In addition,
The pressure contact range of the prism portion is shown by a two-dot chain line in FIG.

In the power semiconductor device 1 configured as described above, the upper surface 15, 17 of the insulating block 3b, 4b and the resist 8 of the substrate 2 substantially function as a sealing material, so that the sealing resin 5 is outside the cavity. Can be prevented from leaking. For this reason, the same effect as when the first embodiment is adopted can be obtained.

Fourth Embodiment In order to form a mold clamping surface on a power supply connector, the structure shown in FIGS. 18 and 19 can be adopted. 18 (a) is a plan view, FIG. 18 (b) is a left side view, and FIG. 18 (c) is a cross-sectional view taken along line CC in FIG. 18 (a). It is a line sectional view. 19 (a) is a plan view, FIG. 19 (b) is a left side view, and FIG. 19 (c) is a cross section taken along line CC in FIG. 19 (a). FIG. In these drawings, the same or equivalent members as those described in FIGS. 1 to 17 are denoted by the same reference numerals, and detailed description thereof will be omitted.

The power supply connector 3 shown in FIGS. 18 and 19 comprises a terminal 41 made of copper and a mold clamping plate 42 made of synthetic resin. The terminal 41 includes a base 41a soldered to a conductor pattern (not shown) of the substrate 2, and a wiring connection part 41b integrally formed so as to protrude upward from the base 41a. The base 41a and the wiring connection 41b are each formed in a prismatic shape so that the width of the wiring connection 41b becomes relatively narrow. Further, a female screw 43 into which a bolt penetrating a crimp terminal of a power supply wiring (not shown) is screwed is provided in the wiring connection portion 41b.

The mold clamping plate 42 is supported by the base 41a in a state where the wiring connection portion 41b of the terminal 41 penetrates. The upper surface of the mold clamping plate 42 is formed flat so as to be parallel to the main surface of the substrate 2.

A molding die (not shown) for molding the sealing resin 5 of the power semiconductor device 1 is formed so that the entire base 41a of the terminal 41 of the power supply connector 3 is accommodated in the cavity. I do. In this cavity, a prism having a concave portion facing the wiring connection portion 41b of the terminal 41 is formed for each power supply connector 3. This prism is
The tip surface is formed so as to be pressed against the upper surface of the mold clamping plate 42. The pressure contact range of the prism is shown by a two-dot chain line in FIG.

In the power semiconductor device 1 configured as described above, the mold clamping plate 42 of the power supply connector 3, the insulating block of the signal connector (not shown), and the resist 8 of the substrate 2 are substantially sealed. By functioning as a material, it is possible to prevent the sealing resin 5 from leaking out of the cavity. For this reason, the same effect as when the first embodiment is adopted can be obtained.

Fifth Embodiment As shown in FIGS. 20 and 21, the sealing resin can be molded only at the central portion of the substrate except for the connector mounting portion. FIGS. 20A and 20B are views showing a power semiconductor device in which a sealing resin is molded only at a central portion of a substrate. FIG. 20A is a plan view, and FIG. 20B is a front view. The drawing is drawn with the power supply wiring connected. FIGS. 21A and 21B are views showing a substrate before resin sealing. FIG. 21A is a plan view and FIG. 21B is a front view. In these figures, FIG.
The same or equivalent members as those described with reference to FIG. 19 are denoted by the same reference numerals, and detailed description is omitted.

In the power semiconductor device 1 shown in FIG. 20, the sealing resin 5 is molded at the center of the substrate 2, and a wiring connecting portion 52 for connecting the power supply wiring 51 is formed on one side of the sealing resin 5. The signal connector 4 is disposed on the other side. As shown in FIG. 21, the wiring connection section 52 includes a tip end of the conductor pattern 7 extending to one end of the substrate 2 and a round hole 53 formed in the substrate 2. The conductor pattern 7 is covered with a resist 8 at all parts except the wiring connection part 52. In addition,
Reference numeral 54 provided at the end of the power supply wiring 51 denotes a crimp terminal. The crimp terminal 54 includes a fixing bolt 55, an insulating washer 56, and a nut 5 penetrating the round hole 53.
7 connects to the wiring connection section 52.

A molding die (not shown) for molding the sealing resin 5 of the power semiconductor device 1 is formed by pressing the substrate 2 outside a cavity forming range shown by a two-dot chain line in FIG. It is formed to be tightened. That is, in the power semiconductor device 1, the resist 8 of the substrate 2 substantially functions as a sealing material, thereby forming the sealing resin 5.
Can be prevented from leaking out of the cavity.
For this reason, the same effect as when the first embodiment is adopted can be obtained.

As described above, the sealing resin 5 is
In the case of adopting the structure provided in the center of the power supply, the power supply connector 3 can be formed only by the terminals 3a as shown in FIGS. FIGS. 22A and 22B are diagrams showing a power supply connector portion of a power semiconductor device in which a power supply connector is formed only of terminals, wherein FIG. 22A is a plan view, FIG. 22B is a left side view, and FIG. Is a front view. FIG.
Is a diagram showing a terminal mounting portion of the substrate, FIG.
FIG. 1B is a left side view, and FIG. 1C is a front view. In these figures, the same or equivalent members as those described in FIGS. 1 to 21 are denoted by the same reference numerals, and detailed description is omitted.

The terminal 3a of the power supply connector 3 shown in FIGS. 22 and 23 has the same structure as that shown in FIG. 13, and is a wiring connection portion (not shown) formed integrally with the conductor pattern 7 of the substrate 2. Soldered. Even with such a configuration, the same effect as when the first embodiment is adopted can be obtained.

[0056]

As described above, the power semiconductor device according to the present invention is provided with a synthetic resin block through which the external connection terminal penetrates at the base of the external connection terminal. Because the clamping surface to be pressed is formed,
Since the synthetic resin block substantially functions as a sealing material, it is possible to prevent the mold resin in a molten state from leaking from the inside of the cavity to the external connection terminal side during molding.

Therefore, burrs can be generated without mounting a plurality of external connection terminals on the substrate with high accuracy, and without forming recesses in the mold that match the shapes and dimensions of the external connection terminals. Therefore, the cost of assembling the external connection terminals to the substrate and the manufacturing cost of the mold can be reduced. In addition, since the resin sealing portion can be formed of the mold resin, the number of assembly steps and the number of components can be reduced as compared with a conventional power semiconductor device using a case.

According to another aspect of the present invention, there is provided a power semiconductor device comprising: a substrate on which a semiconductor chip is mounted; a metal substrate main body; a conductor pattern formed on the substrate main body via an insulating film;
Since the resist film covers the conductor pattern, and the surface of the resist film is a mold clamping surface against which the mold is pressed, the resist film substantially functions as a sealing material. It is possible to prevent the resin from leaking out of the cavity through the space between the mold and the substrate.

Therefore, even if the precision of the thickness of the substrate is low and the precision of forming the mating surface of the mold is low, no burrs are generated in the mold mating portion. Manufacturing costs can be reduced. In addition, since the resin sealing portion can be formed of the mold resin, the number of assembly steps and the number of components can be reduced as compared with a conventional power semiconductor device using a case.

[Brief description of the drawings]

FIG. 1 is a diagram showing a power semiconductor device according to the present invention.

FIG. 2 is a view showing a state before the resin sealing of the power semiconductor device according to the present invention.

FIG. 3 is a diagram showing a power supply connector.

FIG. 4 is a diagram showing a signal connector.

FIG. 5 is a diagram showing a state after resin sealing of the power semiconductor device according to the present invention.

FIG. 6 is a sectional view taken along line VI-VI in FIG.

FIG. 7 is a bottom view showing the cavity of the upper mold.

FIG. 8 is a plan view showing a substrate loading section of a lower mold.

FIG. 9 is a cross-sectional view showing a state in which a sealing resin is injected into a cavity.

FIG. 10 is a diagram showing a power supply connector portion of the power semiconductor device.

FIG. 11 is a view showing a power supply connector portion in a state where it is released from a mold.

FIG. 12 is a diagram showing a power supply connector portion in a state where the power supply connector is mounted on a substrate.

FIG. 13 is a diagram showing terminals of a power connector.

FIG. 14 is a diagram showing an insulating block of the power connector.

FIG. 15 is a diagram showing a power connector.

FIG. 16 is a diagram showing a power semiconductor device in which only an upper surface of an insulating block is a mold clamping surface.

FIG. 17 is a diagram showing a state where a connector is attached to a board.

FIG. 18 is a diagram showing a power supply connector portion of the power semiconductor device.

FIG. 19 is a diagram showing a power supply connector mounting portion of the board.

FIG. 20 is a diagram showing a power semiconductor device in which a sealing resin is molded only at a central portion of a substrate.

FIG. 21 is a view showing a substrate before resin sealing.

FIG. 22 is a diagram showing a power supply connector portion of a power semiconductor device in which a power supply connector is formed only of terminals.

FIG. 23 is a diagram showing a terminal mounting portion of the board.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Power semiconductor device, 2 ... Board, 3 ... Power supply connector, 3a ... Terminal, 3b ... Insulation block, 4 ... Signal connector, 4a ... Terminal, 4b ... Insulation block, 5 ... Sealing resin, 7 ... Conductor Pattern, 8 resist, 9 semiconductor chip, 15 17 top surface, 16 19 side surface, 20 mold die, 21 upper die, 22 lower die.

Claims (2)

[Claims] 1. A power semiconductor device in which a power semiconductor chip mounting portion of a substrate is sealed with a mold resin and an external connection terminal protrudes from the resin sealing portion. The base is provided with a synthetic resin block through which the external connection terminal passes,
A power semiconductor device, characterized in that a mold clamping surface with which a mold for molding a resin sealing portion is pressed into contact with the block. 2. A power semiconductor device for sealing a power semiconductor chip mounting portion of a substrate with a mold resin,
The substrate is composed of a metal substrate main body, a conductor pattern formed on the substrate main body via an insulating film, and a resist film covering the conductor pattern. A power semiconductor device having a mold clamping surface against which a molding die is pressed.