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JPH0943274A - Contact structure of contact probe with object to be inspected - Google Patents

Contact structure of contact probe with object to be inspected

Info

Publication number
JPH0943274A
JPH0943274A JP7211396A JP21139695A JPH0943274A JP H0943274 A JPH0943274 A JP H0943274A JP 7211396 A JP7211396 A JP 7211396A JP 21139695 A JP21139695 A JP 21139695A JP H0943274 A JPH0943274 A JP H0943274A
Authority
JP
Japan
Prior art keywords
contact
probe
terminal
measured
inspected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7211396A
Other languages
Japanese (ja)
Inventor
Makoto Yanagawa
川 誠 柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP7211396A priority Critical patent/JPH0943274A/en
Publication of JPH0943274A publication Critical patent/JPH0943274A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an electrically stable contact by generating a self-cleaning action in the contact sites of a terminal to be measured with a contactor and the inner wall of a probe body with a top in a contact structure of a contact probe with an object to be inspected. SOLUTION: The contact structure brings a contact probe 6 into contact with a terminal 8 to be measured of a semiconductor device 7 to be inspected by pressing a contactor 5. The probe 6 is held by an angle so formed as to cross its shaft 4 at an acute angle θ1 to the surface of the terminal 8 to be measured of the device 7 to be inspected, the contactor 5 of the probe 6 is pressed to the terminal 8 to be measured as remaining in the inclined state, the contactor 5 is brought into sliding contact with the terminal 8, and the inner wall of the probe body 1 is bought into sliding contact with a top 3. Thus, a self-cleaning operation is given rise to at the contact site of them to be able to obtain electrically stable contact.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えばICテス
タ、ウェハ検査装置、液晶検査装置などのヘッド部に用
いるコンタクトプローブを検査対象の半導体装置の被測
定端子に接触させる接触構造に関し、特に相互の接触部
位にセルフクリーニング作用を生ぜしめ電気的に安定接
触を得ることができるコンタクトプローブの検査対象へ
の接触構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact structure in which a contact probe used in a head portion of an IC tester, a wafer inspection device, a liquid crystal inspection device, or the like is brought into contact with a terminal to be measured of a semiconductor device to be inspected, and particularly to a mutual contact structure. The present invention relates to a contact structure of a contact probe for contacting an object to be inspected, which is capable of producing a self-cleaning action at a contact portion and obtaining an electrically stable contact.

【0002】[0002]

【従来の技術】従来のこの種のコンタクトプローブは、
図3に示すように、筒状に形成されたプローブ本体1
と、このプローブ本体1の内部に嵌装されスプリング2
で付勢されてスライド可能とされたコマ3と、このコマ
3から上記プローブ本体1の軸方向へ伸びて外部へ突出
するシャフト4の先端部に棒状に形成された接触子5と
を有して成っていた。
2. Description of the Related Art A conventional contact probe of this type is
As shown in FIG. 3, the probe body 1 is formed in a tubular shape.
And the spring 2 fitted inside the probe body 1.
And a rod-shaped contactor 5 at the tip of a shaft 4 extending from the top 3 in the axial direction of the probe body 1 and protruding to the outside. It was made up of

【0003】そして、このようなコンタクトプローブ6
を検査対象に接触させるには、図4に示すように、上記
コンタクトプローブ6をそのシャフト4が検査対象の半
導体装置7の被測定端子8の面に対し直角に交わるよう
に向けて保持し、この状態で上記半導体装置7を矢印A
のように押し下げて上記被測定端子8にシャフト4の先
端部の接触子5を垂直に押し当てて接触させていた。こ
のとき、上記矢印A方向の押し下げにより、上記接触子
5及びシャフト4は図3に示す内部のスプリング2の弾
性力に抗して押し下げられ、該接触子5の押し当て移動
量は位置aからbまでの距離となる。そして、この押し
当て移動量a〜bに相当するスプリング2の圧縮による
弾性力により、上記接触子5は被測定端子8に押し付け
られ、電気的な接触を得ていた。
And, such a contact probe 6
In order to bring the contact probe 6 into contact with the object to be inspected, as shown in FIG. 4, the contact probe 6 is held so that the shaft 4 crosses at right angles to the surface of the terminal 8 to be measured of the semiconductor device 7 to be inspected, In this state, move the semiconductor device 7 to the arrow A
As described above, the contactor 5 at the tip of the shaft 4 is vertically pressed against the terminal 8 to be measured so as to be in contact therewith. At this time, by pushing down in the direction of the arrow A, the contact 5 and the shaft 4 are pushed down against the elastic force of the internal spring 2 shown in FIG. 3, and the pressing movement amount of the contact 5 is from the position a. It is the distance to b. Then, the contact 5 is pressed against the measured terminal 8 by the elastic force due to the compression of the spring 2 corresponding to the pressing movement amounts a to b, and the electrical contact is obtained.

【0004】[0004]

【発明が解決しようとする課題】しかし、このような従
来のコンタクトプローブの検査対象への接触構造は、図
4に示すように、半導体装置7の被測定端子8の面に対
しコンタクトプローブ6の先端部の接触子5を垂直に押
し当てて接触させていたので、上記半導体装置7の押し
当て移動量a〜bに相当するスプリング2の圧縮による
弾性力だけで接触子5と被測定端子8の面とが押圧接触
しているのみであり、それ以上の積極的な安定接触を得
る工夫はなされていなかった。すなわち、単に押圧接触
しているだけでは、被測定端子8の面に酸化被膜が形成
されたり塵埃が付着した場合は、接触不良となることが
あった。これに対し、上記接触子5の先端形状を先割れ
多点形や針先形としたものもあるが、被測定端子8の表
面の摩耗が激しく寿命が短縮化されるものであった。ま
た、上記先端形状の接触子5には、被測定端子8のメッ
キが付着し易く、却って接触不良の原因となることがあ
った。
However, as shown in FIG. 4, such a conventional contact probe contact structure for contacting an object to be inspected has a structure in which the contact probe 6 is attached to the surface of the measured terminal 8 of the semiconductor device 7 as shown in FIG. Since the contactor 5 at the tip end is vertically pressed and brought into contact, the contactor 5 and the terminal 8 to be measured 8 only by the elastic force due to the compression of the spring 2 corresponding to the pressing movement amounts a to b of the semiconductor device 7. It is only in pressure contact with the surface of No. 3, and no further measures for positive and stable contact have been made. That is, if the surface of the measured terminal 8 is formed with an oxide film or dust is adhered, the contact may be poor simply by making a pressure contact. On the other hand, although the tip shape of the contactor 5 may be a multi-pointed tip shape or a needle tip shape, the surface of the terminal 8 to be measured is severely worn and the life thereof is shortened. Moreover, the plating of the terminals 8 to be measured is likely to adhere to the tip-shaped contactor 5, which may cause contact failure on the contrary.

【0005】また、図3に示すように、コマ3はプロー
ブ本体1の筒状内にてスライド可能に嵌装されているだ
けであり、それ以上の積極的な安定接触を得る工夫はな
されていなかった。この場合、仮に図4に示す被測定端
子8と接触子5とが良好な接触が得られても、シャフト
4及び図3に示すコマ3を介してプローブ本体1と接触
するのは該コマ3の一端面に介装されたスプリング2に
よって行うこととなり、十分な接触が得られないことが
あった。
Further, as shown in FIG. 3, the top 3 is only slidably fitted in the cylindrical shape of the probe main body 1, and a device for further positive and stable contact is made. There wasn't. In this case, even if good contact is obtained between the terminal 8 to be measured and the contact 5 shown in FIG. 4, it is the top 3 that comes into contact with the probe main body 1 via the shaft 4 and the top 3 shown in FIG. Since it is performed by the spring 2 interposed on one end surface of the above, sufficient contact may not be obtained in some cases.

【0006】これらのことから従来のコンタクトプロー
ブの検査対象への接触構造は、電気的に安定接触を得ら
れないことがあった。従って、半導体装置7の被測定端
子8とコンタクトプローブ6の接触不良により、該半導
体装置7の機能試験において正常な検査ができないこと
があったり、試験結果の信頼性が低下することがあっ
た。
For these reasons, the contact structure of the conventional contact probe to the object to be inspected may not be able to obtain an electrically stable contact. Therefore, due to poor contact between the measured terminal 8 of the semiconductor device 7 and the contact probe 6, a normal test may not be performed in the functional test of the semiconductor device 7, or the reliability of the test result may decrease.

【0007】そこで、本発明は、このような問題点に対
処し、相互の接触部位にセルフクリーニング作用を生ぜ
しめ電気的に安定接触を得ることができるコンタクトプ
ローブの検査対象への接触構造を提供することを目的と
する。
Therefore, the present invention addresses such problems and provides a contact probe contact structure for an object to be inspected, which is capable of producing a self-cleaning action at mutual contact sites and obtaining an electrically stable contact. The purpose is to do.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明によるコンタクトプローブの検査対象への接
触構造は、筒状に形成されたプローブ本体とこのプロー
ブ本体の内部に嵌装されスプリングで付勢されてスライ
ド可能とされたコマとこのコマから上記プローブ本体の
軸方向へ伸びて外部へ突出するシャフトの先端部に棒状
に形成された接触子とを有するコンタクトプローブを、
検査対象の半導体装置の被測定端子に上記接触子を押し
当てて接触させる接触構造において、上記コンタクトプ
ローブをそのシャフトが検査対象の半導体装置の被測定
端子面に対し鋭角で交わるように角度付けをして保持
し、この傾斜状態のまま該コンタクトプローブの接触子
を上記被測定端子に押し当て、該接触子と被測定端子と
を摺動接触させると共に上記プローブ本体の内壁とコマ
とを摺動接触させるものである。
In order to achieve the above object, a contact structure of a contact probe according to the present invention to an object to be inspected includes a cylindrical probe main body and a spring fitted inside the probe main body. A contact probe having a top that is urged by and slidable and a contact formed in a rod shape at the tip of a shaft that extends from the top in the axial direction of the probe body and projects to the outside,
In a contact structure in which the contact is pressed against the measured terminal of the semiconductor device to be inspected to make contact, the contact probe is angled so that its shaft intersects the measured terminal surface of the semiconductor device to be inspected at an acute angle. The contact piece of the contact probe is pressed against the terminal to be measured in this inclined state, and the contact piece and the terminal to be measured are brought into sliding contact with each other, and the inner wall of the probe body and the top are slid. It is something to contact.

【0009】[0009]

【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づいて詳細に説明する。図1は本発明によるコ
ンタクトプローブの検査対象への接触構造を示す一部断
面した側面説明図である。まず、本発明の接触構造に用
いるコンタクトプローブ6は、図3に示す従来例と同様
に構成されている。すなわち、図3において、プローブ
本体1は、金属ででき所定の直径の所定の長さの例えば
円筒状に形成されると共に、その上端部と下端部は内側
に折り曲げられて後述のコマ3及びスプリング2に対す
る係止片が形成されている。
Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a partially sectional side view showing a contact structure of a contact probe according to the present invention to an inspection object. First, the contact probe 6 used in the contact structure of the present invention is configured similarly to the conventional example shown in FIG. That is, in FIG. 3, the probe main body 1 is made of metal and is formed into, for example, a cylindrical shape having a predetermined diameter and a predetermined length, and an upper end portion and a lower end portion thereof are bent inward to form a top 3 and a spring described later. A locking piece for 2 is formed.

【0010】上記プローブ本体1の内部には、コマ3が
嵌装されている。このコマ3は、上記プローブ本体1内
をスライドすると共に後述の接触子5と該プローブ本体
1とを電気的に接触させるもので、金属でできプローブ
本体1の内径よりも小さい直径で例えばプランジャー状
に形成されている。そして、上記プローブ本体1の内部
にてコマ3の一端面側には、例えばコイル状のスプリン
グ2が介装されている。このスプリング2は、金属でで
き上記プローブ本体1の内部にてコマ3が位置する余部
に圧縮スプリングとして介装されており、上記コマ3を
図3において常時上方へ付勢すると共に該コマ3がスラ
イド可能となるように支えている。
A top 3 is fitted inside the probe body 1. The top 3 slides in the probe body 1 and electrically contacts a contact 5 described later with the probe body 1. The top 3 is made of metal and has a diameter smaller than the inner diameter of the probe body 1, for example, a plunger. It is formed into a shape. Inside the probe body 1, a coil-shaped spring 2, for example, is provided on one end surface side of the top 3. The spring 2 is made of metal and is interposed as a compression spring in a space where the top 3 is located inside the probe body 1. The spring 3 always biases the top 3 upward in FIG. It is supported so that it can slide.

【0011】上記コマ3の軸線上の外部には、接触子5
が設けられている。この接触子5は、実際に検査対象の
半導体装置の被測定端子に当接するもので、金属ででき
上記コマ3からプローブ本体1の軸方向へ伸びて外部へ
突出するシャフト4の先端部に棒状に形成されている。
この接触子5は、上記のようにコマ3の軸線上に設けら
れていることから、図3に矢印B,Cで示すように、内
部のスプリング2の弾性力により進出、退避可能となっ
ている。
A contact 5 is provided outside the axis of the top 3.
Is provided. The contactor 5 actually contacts the terminal to be measured of the semiconductor device to be inspected, and is made of metal and has a rod-like shape at the tip of the shaft 4 that extends from the top 3 in the axial direction of the probe body 1 and projects to the outside. Is formed in.
Since the contactor 5 is provided on the axis of the top 3 as described above, as shown by arrows B and C in FIG. 3, it can be advanced and retracted by the elastic force of the internal spring 2. There is.

【0012】次に、このようなコンタクトプローブ6を
用いた検査対象への接触構造について、図1を参照して
説明する。図1において、検査対象は例えば半導体ウェ
ハまたはIC(集積回路)等の半導体装置7であり、そ
の表面に電極パッドまたは信号端子などの被測定端子8
が設けられている。そして、この半導体装置7は、適宜
の昇降装置により矢印A方向に下降可能とされている。
また、コンタクトプローブ6は、図示省略の例えばIC
テスタなどの検査用基板に実装されている。
Next, a contact structure for an inspection object using such a contact probe 6 will be described with reference to FIG. In FIG. 1, an object to be inspected is a semiconductor device 7 such as a semiconductor wafer or an IC (integrated circuit), and a measured terminal 8 such as an electrode pad or a signal terminal is provided on the surface thereof.
Is provided. The semiconductor device 7 can be lowered in the arrow A direction by an appropriate lifting device.
The contact probe 6 is, for example, an IC (not shown).
It is mounted on an inspection board such as a tester.

【0013】このような状態で、上記コンタクトプロー
ブ6をそのシャフト4が検査対象の半導体装置7の被測
定端子8の面に対し鋭角θ1(0°<θ1<90°)で交わ
るように角度付けをして保持し、この傾斜状態のまま上
記半導体装置7に矢印Fのように垂直下方に垂直荷重F
を加え該半導体装置7を矢印Aのように下降させ、上記
コンタクトプローブ6の先端部の接触子5に被測定端子
8を押し当てて接触させる。このとき、上記半導体装置
7の矢印A方向の押し下げにより、上記接触子5及びシ
ャフト4は内部のスプリング2の弾性力に抗して矢印B
方向に押し下げられ、該接触子5の押し当て移動量は位
置aからbまでの距離となる。
In such a state, the shaft of the contact probe 6 crosses the surface of the measured terminal 8 of the semiconductor device 7 to be inspected at an acute angle θ 1 (0 ° <θ 1 <90 °). It is angled and held, and in this tilted state, a vertical load F is applied vertically downward to the semiconductor device 7 as indicated by an arrow F.
Then, the semiconductor device 7 is lowered as indicated by arrow A, and the terminal 8 to be measured is pressed against and brought into contact with the contact 5 at the tip of the contact probe 6. At this time, by pushing down the semiconductor device 7 in the direction of arrow A, the contact 5 and the shaft 4 resist the elastic force of the spring 2 inside and the arrow B.
The contact 5 is pushed down in the direction, and the pressing movement amount of the contact 5 becomes the distance from the position a to the position b.

【0014】さらにこの場合、上述のように上記シャフ
ト4は半導体装置7の被測定端子8の面に対し角度θ1
で交わるように向けられているので、該シャフト4の矢
印B方向の押し下げに従って、被測定端子8の面に当接
された接触子5の先端はその面上で矢印D方向に摺れな
がら位置cからdまでの距離移動する。これにより、上
記接触子5は被測定端子8の面に対し擦り付けるように
して該接触子5と被測定端子8との摺動接触が実現す
る。そして、この被測定端子8の面に対する摺動接触に
より、その面上の酸化被膜や塵埃などを除去してセルフ
クリーニング作用が発揮され、上記接触子5と被測定端
子8との電気的な接触が確実良好となる。
Further, in this case, as described above, the shaft 4 forms an angle θ 1 with respect to the surface of the measured terminal 8 of the semiconductor device 7.
As the shaft 4 is pushed down in the direction of the arrow B, the tip of the contact 5 abutted on the surface of the terminal 8 to be measured slides in the direction of the arrow D on the surface of the terminal 8 to be measured. Move a distance from c to d. As a result, the contact 5 is rubbed against the surface of the terminal 8 to be measured, so that sliding contact between the contact 5 and the terminal 8 to be measured is realized. The sliding contact with the surface of the terminal to be measured 8 removes the oxide film and dust on the surface to exert a self-cleaning action, and the electrical contact between the contact 5 and the terminal to be measured 8 is achieved. Is definitely good.

【0015】一方、上記シャフト4の矢印B方向の押し
下げと共に、その下端部に位置するコマ3は、プローブ
本体1内でスプリング2の弾性力に抗して下方に移動す
る。このとき、図1に示すように上記シャフト4は被測
定端子8の面に対し角度θ1で交わって矢印Bのように
押し下げられるので、図2に示すように、プローブ本体
1の中心軸9に対しコマ3の中心軸10が一方側に偏っ
て押し付けられ、その押し付け角度はθ2となる。この
押し付け角度θ2は、上記シャフト4及びコマ3の傾斜
角度θ1の下でプローブ本体1の内壁とコマ3の外周面
との間のすき間で該コマ3が傾くことにより生ずる角度
である。
On the other hand, when the shaft 4 is pushed down in the direction of arrow B, the top 3 located at the lower end of the shaft 4 moves downward in the probe body 1 against the elastic force of the spring 2. At this time, as shown in FIG. 1, the shaft 4 intersects the surface of the terminal 8 to be measured at an angle θ 1 and is pushed down as indicated by an arrow B. Therefore, as shown in FIG. On the other hand, the central axis 10 of the top 3 is biased toward one side and the pressing angle is θ 2 . The pressing angle θ 2 is an angle generated by tilting the top 3 under the inclination angle θ 1 of the shaft 4 and the top 3 between the inner wall of the probe body 1 and the outer peripheral surface of the top 3.

【0016】このような押し付け角度θ2が付与された
状態で、図1に示すようにシャフト4が矢印B方向に押
し下げられると、該シャフト4の下端部に位置するコマ
3は、図2に示すように、上記押し付け角度θ2で傾い
てその下端部の一部3′がプローブ本体1の内壁の一部
に対し擦り付けるようにして下方へ移動する。これによ
り、上記プローブ本体1の内壁とコマ3との摺動接触が
実現し、上記内壁面上の酸化被膜や塵埃などを除去して
セルフクリーニング作用が発揮され、上記コマ3とプロ
ーブ本体1との電気的な接触が確実良好となる。
When the shaft 4 is pushed down in the direction of arrow B as shown in FIG. 1 in the state where such a pressing angle θ 2 is applied, the top 3 located at the lower end of the shaft 4 is moved to the position shown in FIG. as shown, the pressing portion 3 of the lower end portion inclined at an angle theta 2 'is moved downward so as to rub against a part of the inner wall of the probe body 1. As a result, sliding contact between the inner wall of the probe body 1 and the top 3 is realized, and an oxide film or dust on the inner wall is removed to exert a self-cleaning action. The electrical contact of is surely good.

【0017】なお、図2において、プローブ本体1の上
端部の係止片11の突出量を適宜の寸法に設定し、シャ
フト4の外周面と上記係止片11の内端部とが摺動接触
することにより、両者の電気的な接触を確実良好とする
こともできる。
In FIG. 2, the amount of protrusion of the locking piece 11 at the upper end of the probe body 1 is set to an appropriate size so that the outer peripheral surface of the shaft 4 and the inner end of the locking piece 11 slide. By making contact with each other, electrical contact between the two can be surely improved.

【0018】また、図1に示す実施の形態では、コンタ
クトプローブ6を固定状態としておき検査対象の半導体
装置7を移動させて両者を接触させるものとしたが、本
発明はこれに限らず、上記半導体装置7を固定状態とし
ておきコンタクトプローブ6を移動させて両者を接触さ
せるようにしてもよい。なお、図1及び図3において
は、接触子5の先端形状を針先形としているが、これに
限らず、例えば半球状に形成したものでもよい。
In the embodiment shown in FIG. 1, the contact probe 6 is fixed and the semiconductor device 7 to be inspected is moved to bring them into contact with each other. However, the present invention is not limited to this. The semiconductor device 7 may be fixed and the contact probe 6 may be moved to bring them into contact with each other. 1 and 3, the tip of the contact 5 has a needle tip shape, but the shape is not limited to this, and may be, for example, a hemispherical shape.

【0019】[0019]

【発明の効果】本発明は以上のように構成されたので、
コンタクトプローブをそのシャフトが検査対象の半導体
装置の被測定端子面に対し鋭角で交わるように角度付け
をして保持し、この傾斜状態のまま該コンタクトプロー
ブの接触子を上記被測定端子に押し当てることにより、
該接触子と被測定端子とを摺動接触させると共にプロー
ブ本体の内壁とコマとを摺動接触させることができる。
これにより、相互の接触部位の酸化被膜や塵埃などを除
去してセルフクリーニング作用を発揮することができ、
電気的な接触を確実良好として安定接触を得ることがで
きる。従って、本発明によれば、検査対象の半導体装置
の機能試験において正常な検査をすることができると共
に、試験結果の信頼性を向上することができる。
Since the present invention is constructed as described above,
The contact probe is held at an angle such that its shaft intersects the surface of the terminal to be measured of the semiconductor device to be inspected at an acute angle, and the contactor of the contact probe is pressed against the terminal to be measured in this inclined state. By
The contactor and the terminal to be measured can be brought into sliding contact with each other, and the inner wall of the probe body and the top can be brought into sliding contact with each other.
As a result, the self-cleaning action can be achieved by removing the oxide film, dust, etc. at the mutual contact parts.
Stable contact can be obtained by ensuring good electrical contact. Therefore, according to the present invention, a normal test can be performed in the functional test of the semiconductor device to be tested, and the reliability of the test result can be improved.

【0020】また、上記コンタクトプローブは、従来か
ら存在する既存品をそのまま用いることができるので、
コストアップの要因を抑えて経済的なコンタクトプロー
ブの検査対象への接触構造を提供することができる。こ
の場合、コンタクトプローブを傾斜状態で用いることに
より接触信頼性、安定性が得られ、内部のスプリングの
バネ圧を軽減できるので、多くのコンタクトプローブを
用いる検査装置では、被測定部又はコンタクトプローブ
押し当て機構の加圧力を低減することができる。この結
果として、機構部が簡単になり装置コストの低減を実現
できる。
Further, since the above contact probe can be used as it is, the existing product existing in the past can be used as it is.
It is possible to suppress the cost increase factor and provide an economical contact probe contact structure for the inspection target. In this case, contact reliability and stability can be obtained by using the contact probe in a tilted state, and the spring pressure of the internal spring can be reduced. The pressing force of the contact mechanism can be reduced. As a result, the mechanical section can be simplified and the device cost can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明によるコンタクトプローブの検査対象へ
の接触構造を示す一部断面した側面説明図である。
FIG. 1 is a side cross-sectional explanatory view showing a contact structure of a contact probe according to the present invention to an object to be inspected.

【図2】プローブ本体内部における接触状態を示す拡大
断面図である。
FIG. 2 is an enlarged cross-sectional view showing a contact state inside the probe main body.

【図3】本発明及び従来例によるコンタクトプローブの
全体構造を示す一部断面した側面図である。
FIG. 3 is a partially sectional side view showing the entire structure of a contact probe according to the present invention and a conventional example.

【図4】従来例によるコンタクトプローブの検査対象へ
の接触構造を示す側面説明図である。
FIG. 4 is a side view illustrating a contact structure of a conventional contact probe with an inspection target.

【符号の説明】[Explanation of symbols]

1…プローブ本体 2…スプリング 3…コマ 4…シャフト 5…接触子 6…コンタクトプローブ 7…半導体装置 8…被測定端子 9…プローブ本体の中心軸 10…コマの中心軸 11…係止片 θ1…シャフトの傾斜角度 θ2…コマの押し付け角度DESCRIPTION OF SYMBOLS 1 ... Probe body 2 ... Spring 3 ... Top 4 ... Shaft 5 ... Contact 6 ... Contact probe 7 ... Semiconductor device 8 ... Terminal to be measured 9 ... Central axis of probe body 10 ... Center axis of top 11 ... Locking piece θ 1 … Shaft inclination angle θ 2 … Top pressing angle

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 筒状に形成されたプローブ本体とこのプ
ローブ本体の内部に嵌装されスプリングで付勢されてス
ライド可能とされたコマとこのコマから上記プローブ本
体の軸方向へ伸びて外部へ突出するシャフトの先端部に
棒状に形成された接触子とを有するコンタクトプローブ
を、検査対象の半導体装置の被測定端子に上記接触子を
押し当てて接触させる接触構造において、上記コンタク
トプローブをそのシャフトが検査対象の半導体装置の被
測定端子面に対し鋭角で交わるように角度付けをして保
持し、この傾斜状態のまま該コンタクトプローブの接触
子を上記被測定端子に押し当て、該接触子と被測定端子
とを摺動接触させると共に上記プローブ本体の内壁とコ
マとを摺動接触させることを特徴とするコンタクトプロ
ーブの検査対象への接触構造。
1. A probe main body formed in a tubular shape, a piece fitted inside the probe main body and slidable by being biased by a spring, and extending from the top in the axial direction of the probe main body to the outside. In a contact structure in which a contact probe having a contact formed in a rod shape at the tip of a protruding shaft is pressed against the terminal to be measured of the semiconductor device to be inspected by contacting the contact, the contact probe is provided with the shaft. Is held at an angle so that it intersects the measured terminal surface of the semiconductor device to be inspected at an acute angle, and the contactor of the contact probe is pressed against the measured terminal in this inclined state, A contact probe to be inspected is characterized in that the terminal under test is slidably contacted with the inner wall of the probe body and the top is slidably contacted. Contact structure.
JP7211396A 1995-07-28 1995-07-28 Contact structure of contact probe with object to be inspected Pending JPH0943274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7211396A JPH0943274A (en) 1995-07-28 1995-07-28 Contact structure of contact probe with object to be inspected

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7211396A JPH0943274A (en) 1995-07-28 1995-07-28 Contact structure of contact probe with object to be inspected

Publications (1)

Publication Number Publication Date
JPH0943274A true JPH0943274A (en) 1997-02-14

Family

ID=16605282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7211396A Pending JPH0943274A (en) 1995-07-28 1995-07-28 Contact structure of contact probe with object to be inspected

Country Status (1)

Country Link
JP (1) JPH0943274A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019226A (en) * 1998-07-02 2000-01-21 Mitsubishi Materials Corp Method and apparatus for cleaning of contact pin of probe device
JP2007040946A (en) * 2005-08-02 2007-02-15 Rf Giken Kogyo Kk Ic contactor for device under test
JP2010060290A (en) * 2008-09-01 2010-03-18 Sansha Electric Mfg Co Ltd Inspection apparatus
CN106710176A (en) * 2017-01-20 2017-05-24 芜湖华衍水务有限公司 Electronic fence tester and control method of adjusting unit thereof
JP2020134215A (en) * 2019-02-15 2020-08-31 株式会社サンケイエンジニアリング Probe unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019226A (en) * 1998-07-02 2000-01-21 Mitsubishi Materials Corp Method and apparatus for cleaning of contact pin of probe device
JP2007040946A (en) * 2005-08-02 2007-02-15 Rf Giken Kogyo Kk Ic contactor for device under test
JP2010060290A (en) * 2008-09-01 2010-03-18 Sansha Electric Mfg Co Ltd Inspection apparatus
CN106710176A (en) * 2017-01-20 2017-05-24 芜湖华衍水务有限公司 Electronic fence tester and control method of adjusting unit thereof
CN106710176B (en) * 2017-01-20 2023-08-01 芜湖华衍水务有限公司 Electronic fence tester and control method of adjusting unit thereof
JP2020134215A (en) * 2019-02-15 2020-08-31 株式会社サンケイエンジニアリング Probe unit

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