JPH09148417A - Heat-treating device for substrate - Google Patents
Heat-treating device for substrateInfo
- Publication number
- JPH09148417A JPH09148417A JP32988895A JP32988895A JPH09148417A JP H09148417 A JPH09148417 A JP H09148417A JP 32988895 A JP32988895 A JP 32988895A JP 32988895 A JP32988895 A JP 32988895A JP H09148417 A JPH09148417 A JP H09148417A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plate
- hot plate
- heat
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 320
- 238000010438 heat treatment Methods 0.000 claims abstract description 97
- 238000001816 cooling Methods 0.000 claims abstract description 40
- 230000003028 elevating effect Effects 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000013459 approach Methods 0.000 abstract description 8
- 238000012546 transfer Methods 0.000 description 24
- 238000012545 processing Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000001174 ascending effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ、フ
ォトマスク用のガラス基板、液晶表示装置用のガラス基
板、光ディスク用の基板などの基板を加熱または冷却す
るために、加熱手段または冷却手段のうちの少なくとも
一方を備え、上面に基板を支持して加熱または冷却を行
う熱板と、基板を載置支持する基板支持部材と、熱板と
基板支持部材とを相対昇降させる相対昇降手段とを備え
た基板熱処理装置に関する。The present invention relates to a heating means or a cooling means for heating or cooling a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, or a substrate for an optical disk. A hot plate that includes at least one of the above, and that heats or cools the substrate by supporting it on the upper surface; a substrate support member that mounts and supports the substrate; and a relative elevating means that relatively elevates the heat plate and the substrate support member. The present invention relates to a substrate heat treatment apparatus.
【0002】[0002]
【従来の技術】この種の基板熱処理装置は、ヒーターな
どの加熱手段またはペルチュ素子などの冷却手段を有す
る熱板を備えていて、この熱板の上面に基板を接触支持
(載置)させた状態で基板を加熱または冷却したり、あ
るいは、実開昭63−193833号公報に開示された
装置の如く、熱板の上面より微小高さ突出するようにセ
ラミック製の球体(ボール)を設け、熱板の上に、いわ
ゆるプロキシミティギャップと称される微小な隙間を保
って基板を近接支持させた状態で基板を加熱または冷却
するように構成されている。2. Description of the Related Art This type of substrate heat treatment apparatus is equipped with a hot plate having a heating means such as a heater or a cooling means such as a Peltier element, and the substrate is contacted and supported (placed) on the upper surface of the hot plate. In this state, the substrate is heated or cooled, or, as in the apparatus disclosed in Japanese Utility Model Laid-Open No. 63-193833, a ceramic spherical body (ball) is provided so as to project a minute height above the upper surface of the hot plate. It is configured to heat or cool the substrate while closely supporting the substrate on a heating plate with a minute gap called a so-called proximity gap being maintained.
【0003】また、基板熱処理装置は、例えば、熱板に
形成されている複数個の貫通孔を通って昇降可能に設け
られた複数本の基板支持ピンや、これら基板支持ピンを
一体的に昇降させる昇降機構なども備えている。そし
て、この昇降機構による基板支持ピンの昇降動作と、基
板熱処理装置の外部に設けられている基板搬送ロボット
による基板搬送動作との協動により熱板に対する基板の
搬入・搬出が以下のように行われる。Further, the substrate heat treatment apparatus, for example, includes a plurality of substrate support pins that can be raised and lowered through a plurality of through holes formed in a heating plate, and the substrate support pins are integrally raised and lowered. It also has an elevating mechanism that allows it. Then, the substrate is moved in and out of the hot plate by the cooperation of the ascending / descending operation of the substrate support pin by the elevating mechanism and the substrate transfer operation by the substrate transfer robot provided outside the substrate heat treatment apparatus as follows. Be seen.
【0004】基板を熱板上に搬入するときには、まず、
基板支持ピンを上方位置に上昇させる。そして、基板搬
送ロボットが基板の外周縁をアームに載置支持した状態
でこのアームとともに基板を基板熱処理装置内に挿入
し、基板支持ピンよりも上方の位置に基板を位置させ
る。その状態から基板搬送ロボットを降下させることに
よりアームを降下させ、基板を基板支持ピンに載置支持
させ、基板搬送ロボットを他所へ移動させた後、基板支
持ピンを降下させることにより基板を熱板上面に接触支
持(載置)させたり、基板を球体上に載置させて熱板上
面に近接支持させている。When carrying the substrate onto the hot plate, first,
Raise the substrate support pin to the upper position. Then, the substrate transfer robot inserts the substrate into the substrate heat treatment apparatus together with the arm while mounting and supporting the outer peripheral edge of the substrate on the arm, and positions the substrate above the substrate support pins. From that state, lower the substrate transfer robot to lower the arm, place and support the substrate on the substrate support pins, move the substrate transfer robot to another location, and then lower the substrate support pins to heat the substrate. It is contact-supported (placed) on the upper surface, or the substrate is placed on a sphere to be closely supported on the upper surface of the hot plate.
【0005】また、熱板からの基板の搬出は、上記基板
の搬入と逆の動作で行われる。すなわち、基板支持ピン
を上昇させ、熱板上面に接触支持または近接支持された
基板を熱板の上方へ持ち上げ、熱板の上方の受渡し位置
で基板搬送ロボットが基板支持ピンから基板を受け取り
基板熱処理装置外に搬送している。Further, the unloading of the substrate from the hot plate is performed in the reverse operation of the above-mentioned loading of the substrate. That is, the substrate support pins are raised to lift the substrate that is contact-supported or closely supported on the upper surface of the hot plate above the hot plate, and the substrate transfer robot receives the substrate from the substrate support pin at the transfer position above the hot plate and heat-processes the substrate. Transported outside the equipment.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、上述し
たような構成で、熱板に対する基板の搬入・搬出が行わ
れる基板熱処理装置においては、以下のような問題点が
あった。However, the following problems have been encountered in the substrate heat treatment apparatus having the above-mentioned structure and carrying in / out the substrate from / to the hot plate.
【0007】すなわち、基板搬送ロボットから受け取っ
た基板を熱板上に支持させるために、基板支持ピンを降
下したときに、基板が熱板上面または上記球体に接触し
て支持される直前に基板が横方向に滑り、熱板上面の所
定の位置に基板が正しく支持されないという事態が発生
していた。That is, in order to support the substrate received from the substrate transfer robot on the hot plate, when the substrate support pins are lowered, the substrate is immediately contacted with the upper surface of the hot plate or the sphere and supported. There was a situation in which the substrate was not properly supported at a predetermined position on the upper surface of the hot plate due to lateral sliding.
【0008】この種の基板熱処理装置においては、基板
を所望の温度に均一に加熱または冷却するように、熱板
の上面は高精度に温度制御されており、所望の温度で所
望の均一性の処理結果を得るためには、基板を熱板上面
の所定の位置に正確に支持させることが必要である。従
って、上述のように熱板上面の所定の位置に基板が正し
く支持されない場合、基板が所望の温度に均一に加熱ま
たは冷却されないという不都合が起きていた。In this type of substrate heat treatment apparatus, the upper surface of the hot plate is temperature-controlled with high precision so that the substrate is uniformly heated or cooled to a desired temperature, and the desired uniformity can be obtained at the desired temperature. In order to obtain the processing result, it is necessary to accurately support the substrate at a predetermined position on the upper surface of the hot plate. Therefore, as described above, when the substrate is not properly supported at the predetermined position on the upper surface of the hot plate, the substrate is not uniformly heated or cooled to a desired temperature.
【0009】また、上述のように熱板上面の所定の位置
に基板が正しく支持されていない状態で基板を熱板から
搬出する際には、基板支持ピンによって持ち上げられた
基板が熱板の上方の受渡し位置から水平方向にずれた位
置に位置されることになるので、基板搬送ロボットがそ
の基板を受け取れなかったり、基板の受渡しの際に基板
に損傷を与えるという不都合も起きていた。Further, as described above, when the substrate is carried out from the hot plate in a state where the substrate is not properly supported at the predetermined position on the upper surface of the hot plate, the substrate lifted by the substrate support pins is located above the hot plate. Since it is located at a position horizontally displaced from the delivery position of the substrate, the substrate transfer robot cannot receive the substrate or damages the substrate when delivering the substrate.
【0010】上記不都合を解消することを目的として、
従来、熱板上面にガイド部材を付設し、降下される基板
の外周縁をこのガイド部材に当接させることで、上記し
た基板の横滑りを防止するように構成した装置もある。
しかしながら、このような構成の場合、基板のサイズが
変わるたびにガイド部材の取り付け位置を変更しなけれ
ばならず、また、ガイド部材が基板搬送ロボットによる
基板の搬送の障害になることもあり、実用的でないとい
う問題がある。In order to eliminate the above inconvenience,
Conventionally, there is also an apparatus in which a guide member is attached to the upper surface of the heating plate and the outer peripheral edge of the substrate to be lowered is brought into contact with the guide member to prevent the above-mentioned side slip of the substrate.
However, in the case of such a configuration, the mounting position of the guide member has to be changed every time the size of the substrate changes, and the guide member may hinder the transfer of the substrate by the substrate transfer robot. There is a problem that it is not appropriate.
【0011】本出願人は、上述した降下時の基板の横滑
りの原因を探究した結果、基板が降下して熱板上面や上
記球体に載置される直前、基板の下面と熱板との間の空
気が上下に狭く挟まれて逃げ難くなって基板を支える状
態になり、基板は基板支持ピンに同期して降下できずに
一時的に宙に浮き、基板支持ピンや熱板などの組み付け
調整の極僅かな不備などによる些細な影響で、基板が横
方向に滑っていたことを突き止めた。As a result of investigating the cause of the sideslip of the substrate during the descent described above, the present applicant found that the substrate was lowered and immediately before being placed on the upper surface of the hot plate or on the sphere, between the lower surface of the substrate and the hot plate. The air is narrowly sandwiched between the top and bottom, making it difficult to escape and supporting the board.The board cannot temporarily descend in synchronization with the board support pins and temporarily floats in the air, and the board support pins and heat plate etc. are assembled and adjusted. It was discovered that the board was slipping laterally due to a trivial effect due to the slightest flaw in the board.
【0012】上記分析の結果より、基板支持ピンや熱板
などの組み付けを高精度に調整して基板の姿勢や熱板の
上面をできる限り水平に保つようにし、低速で基板支持
ピンを降下させて降下時の基板の下面と熱板との間の空
気を逃げ易くすることで、降下時の基板の横滑りを防止
できるものと考えられる。しかしながら、基板支持ピン
や熱板などの組み付けを高精度に調整するには手間と時
間がかかる上に、基板の姿勢や熱板の上面を完全に水平
に保つように基板支持ピンや熱板などの組み付けを調整
するのは困難であり、また、低速で基板支持ピンを降下
させると、熱板に対する基板の搬入動作に時間を要する
ことになるので基板熱処理装置の処理効率が低下してし
まうという欠点がある。From the results of the above analysis, the assembling of the substrate support pins and the heat plate is adjusted with high accuracy so that the posture of the substrate and the upper surface of the heat plate are kept as horizontal as possible, and the substrate support pins are lowered at a low speed. It is considered that the slippage of the substrate during the descent can be prevented by making it easier for the air between the lower surface of the substrate and the hot plate to escape during the descent. However, it takes time and effort to adjust the assembly of the board support pins and the heat plate with high accuracy, and also the board support pins and the heat plate to keep the posture of the board and the top surface of the heat plate completely horizontal. It is difficult to adjust the assembling of the substrate, and if the substrate support pins are lowered at a low speed, it takes time to carry in the substrate to the hot plate, so that the processing efficiency of the substrate heat treatment apparatus decreases. There are drawbacks.
【0013】また、上記球体を設け基板を熱板に近接支
持させる装置にあっては、例えば、プロキシミティギャ
ップを大きくすれば、降下時の基板の下面と熱板との間
の空気が基板を宙に浮かせることが解消でき、降下時の
基板の横滑りが防止できるが、プロキシミティギャップ
を大きく採ると、以下のような不都合が起こる。すなわ
ち、基板を冷却する熱板においては、基板と熱板の間の
間隔が小さい程基板の冷却時間が短くなり処理時間の短
縮が図れるが、上記プロキシミティギャップを大きく採
ることは基板と熱板の間の間隔が大きくなることを意味
するから、処理時間の短縮の妨げになり処置効率が低下
してしまう。また、基板を加熱する熱板においては、プ
ロキシミティギャップを大きく採ると温調精度が悪くな
ったり、基板を目標温度に加熱できないなどの悪影響が
ある。Further, in an apparatus in which the above-mentioned sphere is provided and the substrate is supported in close proximity to the heating plate, for example, if the proximity gap is increased, the air between the lower surface of the substrate and the heating plate at the time of descending will heat the substrate. The floating in the air can be eliminated, and the substrate can be prevented from sliding sideways when descending. However, if the proximity gap is large, the following inconvenience occurs. That is, in the hot plate for cooling the substrate, the smaller the distance between the substrate and the hot plate, the shorter the cooling time of the substrate and the shorter the processing time. Means that the treatment time is shortened and the treatment efficiency is reduced. Further, in the hot plate for heating the substrate, if the proximity gap is large, the temperature control accuracy is deteriorated and the substrate cannot be heated to the target temperature.
【0014】また、本出願人は、以前に降下時の基板の
横滑りを好適に防止し得る考案をなして提案(実開平6-
77231 号公報、実開平6-79140 号公報)している。これ
ら考案は、降下時の基板の下面と熱板との空気を強制的
に排除(いわゆる空気抜き)という着想に基づきなした
もので、実開平6-77231 号公報で提案した装置では、真
空ポンプに連通接続された吸引口を熱板上面に設け、基
板降下時に基板の下面と熱板との間の空気を吸引口から
吸引するように構成され、一方、実開平6-79140 号公報
で提案した装置は、基板支持ピンの昇降に連動して伸縮
する伸縮部材(ベローズポンプ)を熱板下面に設け、収
縮状態の伸縮部材を基板降下に伴って伸長させること
で、熱板に設けられた貫通孔から基板の下面と熱板との
間の空気を吸引するように構成されている。Further, the applicant of the present invention has previously proposed and proposed a device capable of suitably preventing the side slippage of the substrate during the descent (actually, the flat plate 6-
77231 and Japanese Utility Model Laid-Open No. 6-79140). These ideas were based on the idea of forcibly eliminating the air between the bottom surface of the substrate and the heating plate when it descends (so-called air bleeding). In the device proposed in Japanese Utility Model Publication No. 6-77231, a vacuum pump is used. A suction port connected in communication is provided on the upper surface of the hot plate so that the air between the lower surface of the substrate and the hot plate is sucked from the suction port when the substrate descends. On the other hand, it is proposed in Japanese Utility Model Publication No. 6-79140. The device is provided with an elastic member (bellows pump) that expands and contracts in conjunction with the elevation of the substrate support pin on the lower surface of the heating plate, and expands the contracted expanding and contracting member as the substrate descends to penetrate the thermal plate. It is configured to suck air between the lower surface of the substrate and the heating plate through the holes.
【0015】しかしながら、実開平6-77231 号公報で提
案した装置の場合、真空ポンプや電磁開閉弁、真空ポン
プと吸引孔とを連通接続する配管(この出願図面では符
号19、20、21が付されている)などの部品が新たに必要
になるとともに構造が複雑もなるという問題があり、ま
た、吸引口から空気を吸引する際に周囲の粉塵を基板下
面と熱板との間に集塵する結果、基板が汚染されるとい
う問題もある。一方、実開平6-79140 号公報で提案した
装置の場合も、上記実開平6-77231 号公報で提案した装
置と同様に、伸縮部材(この出願図面では符号17が付さ
れている)などの部品が新たに必要になるとともに構造
が複雑になり、貫通孔から空気を吸引する際に周囲の粉
塵を基板下面と熱板との間に集塵して基板が汚染される
という問題があり、また、この装置では、伸長状態の伸
縮部材内の空気を抜くために逆止弁(18)を設けている
が、この逆止弁によって伸長状態の伸縮部材内の空気が
完全に抜けない場合もあり、この場合には、基板の搬出
時の基板上昇動作によって伸縮部材が収縮され、伸縮部
材内の空気が熱板上面から基板に向けて噴出されること
になり、基板支持ピンに載置支持された基板が横方向に
位置ずれしたり、周囲の粉塵を基板に吹き付けて基板の
汚染を招くなどの問題もある。However, in the case of the device proposed in Japanese Utility Model Laid-Open No. 6-77231, a vacuum pump, an electromagnetic on-off valve, and piping for connecting the vacuum pump and the suction hole in communication (reference numerals 19, 20, and 21 are attached in the drawings of this application). However, there is a problem in that the structure is complicated and the structure becomes complicated, and dust is not collected between the bottom surface of the substrate and the heat plate when air is sucked from the suction port. As a result, there is also a problem that the substrate is contaminated. On the other hand, in the case of the device proposed in Japanese Utility Model Laid-Open No. 6-79140, the same as the device proposed in Japanese Utility Model Laid-Open No. 6-77231, the expansion member (reference numeral 17 is attached in the drawing of this application), etc. There is a problem that a new component is required and the structure becomes complicated, and when sucking air from the through-hole, the surrounding dust is collected between the lower surface of the substrate and the heating plate, and the substrate is contaminated. In addition, in this device, the check valve (18) is provided in order to remove the air in the stretched stretchable member. However, even if the check valve does not completely remove the air in the stretched stretchable member. In this case, the expansion / contraction member is contracted by the substrate raising operation when the substrate is unloaded, and the air in the expansion / contraction member is ejected from the upper surface of the heat plate toward the substrate, so that it is mounted and supported on the substrate support pin. The printed circuit board may be displaced laterally or dust around it may be blown onto the circuit board. There is also a problem, such as lead to contamination of the substrate with.
【0016】本発明は、このような事情に鑑みてなされ
たものであって、降下時の基板の横滑りを防止するもの
であって、かつ、上記従来技術で指摘される構成の複雑
化、処理効率の低下、基板の汚染などの種々の問題点を
解消し得る基板熱処理装置を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and is intended to prevent the substrate from slipping sideways when descending, and to complicate the structure and processing pointed out in the above-mentioned prior art. An object of the present invention is to provide a substrate heat treatment apparatus capable of solving various problems such as a decrease in efficiency and substrate contamination.
【0017】[0017]
【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、本発明は、加熱手段または冷却手段のうちの少なく
とも一方を備え、上面に基板を支持して加熱または冷却
を行う熱板と、前記基板を載置支持する基板支持部材
と、前記熱板と前記基板支持部材とを相対昇降させる相
対昇降手段とを備えた基板熱処理装置において、前記熱
板と前記基板支持部材との相対昇降動作にともなう前記
基板下面と前記熱板との接近時に、その基板下面と前記
熱板との間の空気を熱板の外周方向へ導く溝を前記熱板
の上面に形成したことを特徴とするものである。The present invention has the following configuration in order to achieve the above object. That is, the present invention includes a heating plate that includes at least one of heating means and cooling means, supports a substrate on an upper surface to perform heating or cooling, a substrate support member that mounts and supports the substrate, and the heating plate. In a substrate heat treatment apparatus including a relative elevating unit that relatively elevates and lowers the substrate supporting member, when the lower surface of the substrate and the thermal plate are approached with the relative elevating operation of the thermal plate and the substrate supporting member, A groove for guiding air between the lower surface of the substrate and the hot plate to the outer peripheral direction of the hot plate is formed on the upper surface of the hot plate.
【0018】[0018]
【作用】本発明の作用は次のとおりである。熱板に基板
を搬入するために熱板と前記基板支持部材との相対昇降
動作にともなう前記基板下面と前記熱板との接近時に、
基板下面と熱板との間に挟まれた空気は、溝を介して熱
板の外周方向へ抜けるので、基板が熱板上面に支持され
る直前、基板が空気に支えられて宙に浮くことが防止で
き、基板は熱板と前記基板支持部材との相対昇降動作に
同期して熱板に接近されて熱板上に支持され、基板が横
方向に滑ることがない。The operation of the present invention is as follows. At the time of approaching the lower surface of the substrate and the hot plate with a relative lifting operation of the hot plate and the substrate supporting member for carrying the substrate into the hot plate,
Since the air sandwiched between the lower surface of the substrate and the hot plate escapes toward the outer periphery of the hot plate through the groove, the substrate is supported by the air and floats in the air just before being supported on the upper surface of the hot plate. And the substrate is supported on the hot plate by approaching the hot plate in synchronism with the relative raising and lowering operation of the hot plate and the substrate supporting member, and the substrate does not slide laterally.
【0019】[0019]
【発明の実施の形態】以下、図面を参照して本発明の一
実施例を説明する。図1は、本発明に係る基板熱処理装
置の全体構成を示す縦断面図である。この実施例では、
半導体ウエハ(基板)用の基板熱処理装置を例に採り説
明するが、フォトマスク用のガラス基板や液晶表示装置
用のガラス基板、光ディスク用の基板などの各種の基板
用の基板熱処理装置にも本発明は同様に適用することが
できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a vertical sectional view showing the overall configuration of a substrate heat treatment apparatus according to the present invention. In this example,
The substrate heat treatment device for semiconductor wafers (substrates) will be described as an example, but the present invention is also applicable to substrate heat treatment devices for various substrates such as glass substrates for photomasks, glass substrates for liquid crystal display devices, and optical disc substrates. The invention can be similarly applied.
【0020】図1に示すように、この基板熱処理装置
は、ハウジング2内の下方に基板熱処理装置としての基
板冷却装置3が設けられ、その上方に他の基板熱処理装
置としての基板加熱装置4が設けられている。As shown in FIG. 1, in this substrate heat treatment apparatus, a substrate cooling apparatus 3 as a substrate heat treatment apparatus is provided in the lower part of a housing 2, and a substrate heating apparatus 4 as another substrate heat treatment apparatus is provided above it. It is provided.
【0021】基板冷却装置3の処理室5内には、熱板と
しての冷却プレート6が設けられている。その冷却プレ
ート6には複数個(例えば、3個)の貫通孔7が形成さ
れ、これら貫通孔7…を通じて、基板支持部材としての
複数本(例えば、3本)の基板支持ピン8が昇降可能に
設けられている。これら基板支持ピン8…はピン取付部
材9に一体的に取り付けられ、ピン取付部材9は、相対
昇降手段としてのエアシリンダ10のロッド10aに連
動連結されている。エアシリンダ10のロッド10aを
伸縮させることによって冷却プレート6の上面の基板支
持位置(この実施例では、後述するように冷却プレート
6の上面に設けられたボール16に基板Wが載置支持さ
れる位置)より高い上方位置と、前記基板支持位置より
も低い下方位置との間で基板支持ピン8…が昇降される
ようになっている。この基板支持ピン8…の昇降動作と
基板搬送ロボットの基板搬送動作との協動によって冷却
プレート6に対する基板Wの搬入・搬出がなされるが、
これについては後述する。A cooling plate 6 as a heating plate is provided in the processing chamber 5 of the substrate cooling device 3. Plural (for example, three) through holes 7 are formed in the cooling plate 6, and plural (for example, three) substrate support pins 8 as substrate supporting members can be moved up and down through these through holes 7. It is provided in. These substrate support pins 8 ... Are integrally attached to a pin attachment member 9, and the pin attachment member 9 is interlockingly connected to a rod 10a of an air cylinder 10 as a relative lifting means. By expanding and contracting the rod 10a of the air cylinder 10, the substrate supporting position on the upper surface of the cooling plate 6 (in this embodiment, the substrate W is placed and supported on the balls 16 provided on the upper surface of the cooling plate 6 as described later). Position) and a lower position lower than the substrate support position, the substrate support pins 8 are moved up and down. The substrate W is carried in and out of the cooling plate 6 by the cooperation of the ascending / descending operation of the substrate supporting pins 8 ... And the substrate carrying operation of the substrate carrying robot.
This will be described later.
【0022】冷却プレート6は、基板Wを支持するアル
ミ製の伝熱プレート11と、アルミ製の水冷式の水冷板
12と、伝熱プレート11と水冷板12との間に介在さ
れた急冷用のペルチェ素子13…とから構成されてい
る。この水冷板12とペルチェ素子13とが本発明にお
ける冷却手段を構成する。The cooling plate 6 includes a heat transfer plate 11 made of aluminum for supporting the substrate W, a water-cooled water cooling plate 12 made of aluminum, and a quenching plate interposed between the heat transfer plate 11 and the water cooling plate 12. Of the Peltier device 13 ... The water cooling plate 12 and the Peltier element 13 constitute the cooling means in the present invention.
【0023】基板加熱装置4は、処理室14内に、板状
ヒータなどの加熱手段(図示せず)を備えた熱板として
の加熱プレート15を備えて構成され、基板冷却装置3
と同様に、その加熱プレート15に形成した貫通孔7を
通じて複数本の基板支持ピン8が昇降可能に設けられる
とともに、基板支持ピン8…を一体的に取り付けたピン
取付部材9にエアシリンダ10のロッド10aが連動連
結され、基板支持ピン8…の昇降動作と基板搬送ロボッ
トの基板搬送動作との協動により加熱プレート15に対
する基板Wの搬入・搬出が行われ、搬入した基板Wが加
熱プレート15に支持されるようになっている。The substrate heating device 4 comprises a heating plate 15 as a heating plate provided with a heating means (not shown) such as a plate heater in the processing chamber 14, and the substrate cooling device 3 is provided.
Similarly to the above, a plurality of substrate supporting pins 8 are provided so as to be able to move up and down through the through holes 7 formed in the heating plate 15, and the air cylinder 10 is attached to the pin mounting member 9 to which the substrate supporting pins 8 are integrally mounted. The rods 10a are interlocked and coupled, and the substrate W is carried in and out of the heating plate 15 by the ascending / descending operation of the substrate support pins 8 ... And the substrate carrying operation of the substrate carrying robot. It is supposed to be supported by.
【0024】前記冷却プレート6を構成する伝熱プレー
ト11、および、加熱プレート15それぞれには、図2
の要部の斜視図(ここでは加熱プレート15で説明する
が伝熱プレート11も同様である)に示すように、3個
の凹部が正三角形の頂点の位置関係で形成され、それら
の凹部それぞれにはボール16が置かれている。ボール
16…それぞれは、例えば、アルミナ、マテアタイト等
の低伝熱部材によって製作され、ボール16…の上部側
が加熱プレート15の上面よりも微小量だけ突出され、
いわゆるプロキシミティギャップと称される所定の隙間
が有る状態で基板Wをボール16…上に載置支持し、均
一に加熱または冷却できるように構成されている。The heat transfer plate 11 and the heating plate 15 constituting the cooling plate 6 are respectively shown in FIG.
As shown in the perspective view of the main part of (the heating plate 15 is described here, the heat transfer plate 11 is also the same), three concave portions are formed in a positional relationship of the vertices of an equilateral triangle, and each of the concave portions is formed. A ball 16 is placed in the. Each of the balls 16 ... Is made of, for example, a low heat transfer member such as alumina or materatite, and the upper side of the balls 16 ...
The substrate W is mounted and supported on the balls 16 in a state where there is a predetermined gap called a so-called proximity gap, and the substrate W can be heated or cooled uniformly.
【0025】また、加熱プレート15(伝熱プレート1
1も同じ)の上面には、加熱プレート15の上面の中心
PCを通って加熱プレート15の上面を横断するように
1本の溝20が形成されている。The heating plate 15 (heat transfer plate 1
One groove 20 is formed in the upper surface of the heating plate 15 so as to pass through the center PC of the upper surface of the heating plate 15 and cross the upper surface of the heating plate 15.
【0026】上記構成を有する実施例装置での基板Wの
搬入・搬出動作を以下に説明する。なお、加熱プレート
15に対する基板Wの搬入・搬出動作と、冷却プレート
6(伝熱プレート11)に対する基板Wの搬入・搬出動
作は同様であるので、以下では加熱プレート15に対す
る基板Wの搬入・搬出動作を例に採り図3を参照して説
明する。The loading / unloading operation of the substrate W in the apparatus having the above-mentioned structure will be described below. The operation of loading and unloading the substrate W with respect to the heating plate 15 and the operation of loading and unloading the substrate W with respect to the cooling plate 6 (heat transfer plate 11) are the same, so in the following, the loading and unloading of the substrate W with respect to the heating plate 15 is performed. The operation will be described as an example with reference to FIG.
【0027】まず、加熱プレート15への基板Wの搬入
動作を説明する。搬入動作の際には、予め基板支持ピン
8…を上方位置に位置させておく。そして、基板加熱装
置4(基板冷却装置3も同じ)の外部に設けられている
基板搬送ロボット(図示せず)が、基板Wの外周縁を載
置支持したアーム30を図3(a)のX軸方向に水平移
動させて、基板Wを基板加熱装置4外から装置4内に搬
送し、加熱プレート15の上方の所定の位置に基板Wを
位置させる。この位置のZ軸方向の位置は、基板支持ピ
ン8…の上方位置よりも若干上方の位置であり、X軸、
Y軸方向の位置は、加熱プレート15(冷却プレート
6)上に基板Wを支持する際のX軸、Y軸方向の位置と
同じ位置(例えば、加熱プレート15(冷却プレート
6)の上面の中心PCと基板Wの中心WCとが一致する
位置)である。なお、図1に示すように、基板冷却装置
3と基板加熱装置4とが積層されていて、これら装置
3、4の各プレート6、15に対する基板Wの搬入・搬
出を行う基板搬送ロボットにあっては、アーム30をZ
軸方向にも昇降移動させることになるが、この際のZ軸
方向の移動も、各装置3、4ごとの受渡し位置のZ軸方
向の位置に応じて適宜に制御される。First, the operation of loading the substrate W into the heating plate 15 will be described. During the carrying-in operation, the substrate support pins 8 ... Are previously positioned at the upper position. Then, a substrate transfer robot (not shown) provided outside the substrate heating device 4 (the same applies to the substrate cooling device 3) mounts and supports the arm 30 on which the outer peripheral edge of the substrate W is placed and supported in FIG. The substrate W is moved horizontally from the outside of the substrate heating device 4 into the device 4 by horizontally moving in the X-axis direction, and the substrate W is positioned at a predetermined position above the heating plate 15. The position of this position in the Z-axis direction is slightly above the position above the substrate support pins 8 ...
The position in the Y-axis direction is the same position as the position in the X-axis and Y-axis directions when supporting the substrate W on the heating plate 15 (cooling plate 6) (for example, the center of the upper surface of the heating plate 15 (cooling plate 6)). This is the position where the PC and the center WC of the substrate W coincide. In addition, as shown in FIG. 1, the substrate cooling device 3 and the substrate heating device 4 are stacked, and the substrate transportation robot is configured to carry in and carry out the substrate W to and from the plates 6 and 15 of these devices 3 and 4, respectively. Arm 30
Although it is also moved up and down in the axial direction, the movement in the Z-axis direction at this time is also appropriately controlled according to the position in the Z-axis direction of the delivery position of each device 3, 4.
【0028】次に、アーム30を降下させ、この降下動
作の過程で基板支持ピン8…は、その上方位置にてアー
ム30から基板Wを受け取り載置支持する。そして、基
板搬送ロボットが基板加熱装置4からアーム30を退出
させた後、基板支持ピン8…が下方位置へと降下させら
れ、その降下動作(加熱プレート15と基板支持ピン8
…との相対昇降動作)の過程で基板Wが加熱プレート1
5の上面のボール16…に載置され、これで、基板支持
位置において基板Wが加熱プレート15に近接支持され
る。この基板支持ピン8…(基板W)の降下動作におい
て、基板Wがボール16…に載置される直前、すなわち
基板Wの下面と加熱プレート15との接近時に、基板W
の下面と加熱プレート15の間の空気は、図3(b)の
二点鎖線の矢印で示すように溝20から加熱プレート1
5の外周方向へ抜けるので、基板Wの下面と加熱プレー
ト15の間の空気が基板Wを一時的に宙に浮かせて横滑
りさせる、いわゆるエアーベアリング現象の発生を防止
でき、基板WはX軸、Y軸方向について決められた基板
支持位置(例えば、加熱プレート15(冷却プレート
6)の上面中心PCと基板Wの中心WCとが一致する位
置)、および、Z軸方向についての基板支持位置で加熱
プレート15に近接支持されることになる。従って、基
板Wに対する加熱(または冷却)を均一に行なうことが
できる。Next, the arm 30 is lowered, and in the course of this lowering operation, the substrate support pins 8 ... Receive the substrate W from the arm 30 at the upper position and support it. Then, after the substrate transfer robot retracts the arm 30 from the substrate heating device 4, the substrate support pins 8 ... Are lowered to the lower position, and the lowering operation (the heating plate 15 and the substrate support pins 8) is performed.
The substrate W is heated by the heating plate 1
5 is placed on the balls 16 on the upper surface of the substrate 5, so that the substrate W is closely supported by the heating plate 15 at the substrate supporting position. In the lowering operation of the substrate support pins 8 ... (Substrate W), immediately before the substrate W is placed on the balls 16, that is, when the lower surface of the substrate W and the heating plate 15 approach each other, the substrate W.
The air between the lower surface of the heating plate 15 and the heating plate 15 is drawn from the groove 20 into the heating plate 1 as shown by the double-dashed line arrow in FIG.
5, the air between the lower surface of the substrate W and the heating plate 15 can prevent the occurrence of a so-called air bearing phenomenon in which the substrate W temporarily floats in the air and slides sideways. Heating at a substrate support position determined in the Y-axis direction (for example, a position where the center PC of the upper surface of the heating plate 15 (cooling plate 6) and the center WC of the substrate W match) and a substrate support position in the Z-axis direction. It will be closely supported by the plate 15. Therefore, it is possible to uniformly heat (or cool) the substrate W.
【0029】次に、加熱プレート15からの基板Wの搬
出動作を説明する。この搬出動作は上記搬入動作の逆の
動作で行われる。すなわち、基板支持ピン8…が下方位
置から上方位置へと上昇され、この上昇動作の過程で、
加熱プレート15(冷却プレート6も同じ)上に近接支
持された基板Wを載置支持して持ち上げ、上方位置に基
板Wを位置させる。次に、基板搬送ロボットがアーム3
0をX軸方向に水平移動させて基板加熱装置4内に挿入
させる。この際のアーム30のY軸方向の位置やX軸方
向の水平移動量は、上記搬入動作時と同じであるが、Z
軸方向に位置は、基板支持ピン8…が基板Wを支持する
上方位置よりもわずかに下方に位置するように制御され
る。そして、その位置からアーム30を上昇させること
により、その上昇過程で基板Wの外周縁がアーム30に
載置支持され、基板Wが基板支持ピン8…からアーム3
0に受け渡される。そして、アーム30が基板加熱装置
4の外部へ退出され、基板Wが基板加熱装置4の外へと
搬送されていく。Next, the operation of unloading the substrate W from the heating plate 15 will be described. This carry-out operation is performed by the reverse operation of the carry-in operation. That is, the substrate support pins 8 are raised from the lower position to the upper position, and in the process of this raising operation,
The substrate W closely supported on the heating plate 15 (same for the cooling plate 6) is placed, supported, and lifted to position the substrate W at the upper position. Next, the substrate transfer robot uses the arm 3
0 is horizontally moved in the X-axis direction and inserted into the substrate heating device 4. The position of the arm 30 in the Y-axis direction and the horizontal movement amount in the X-axis direction at this time are the same as those at the time of the carry-in operation, but Z
The position in the axial direction is controlled so that the substrate support pins 8 ... Are located slightly below the upper position supporting the substrate W. Then, by raising the arm 30 from that position, the outer peripheral edge of the substrate W is placed and supported on the arm 30 in the raising process, and the substrate W is supported by the substrate support pins 8 ...
Passed to 0. Then, the arm 30 is withdrawn to the outside of the substrate heating device 4, and the substrate W is transported to the outside of the substrate heating device 4.
【0030】上記基板支持ピン8…からアーム30への
基板Wの受渡しにおいて、例えば、先に説明した搬入動
作時にエアーベアリングによって基板Wが横滑りしてい
た場合、基板WのX軸、Y軸方向の位置は予め決められ
た位置からずれた状態であり、一方、基板搬送ロボット
は受渡し位置で基板Wを受け取るように(換言すれば、
基板Wの横滑りによる位置ずれに無関係に)アーム30
の動作制御を行うので、アーム30は基板Wの外周縁を
正確に載置支持できなかったり(受け取れなかった
り)、基板Wに損傷を与えるなどの不都合が起こり得
る。しかしながら、本実施例では、基板Wの搬入動作時
に基板Wの横滑りを防止しているので、アーム30は基
板支持ピン8…から基板Wを正確に受け取ることができ
る。When the substrate W is transferred from the substrate support pins 8 to the arm 30 when, for example, the substrate W is slid sideways by the air bearing during the carry-in operation described above, the substrate W is moved in the X-axis and Y-axis directions. Is displaced from a predetermined position, while the substrate transfer robot receives the substrate W at the delivery position (in other words,
Arm 30 (regardless of positional displacement due to side slip of substrate W)
Since the operation control is performed, the arm 30 may not be able to accurately place (support) the outer peripheral edge of the substrate W (cannot receive it), or the substrate W may be damaged. However, in the present embodiment, the sideslip of the substrate W is prevented during the loading operation of the substrate W, so that the arm 30 can accurately receive the substrate W from the substrate support pins 8.
【0031】このように、本実施例によれば、基板Wの
搬入における基板Wの降下動作時の基板Wの下面と熱板
(加熱プレート15または冷却プレート6)との間の空
気を基板W(熱板)の外周方向へと導く、空気の抜け道
としての溝20を熱板の上面に形成したので、基板Wの
搬入時のエアーベアリングによる基板Wの横滑りを無く
し、予め決められた基板支持位置に正確に基板Wを搬入
することができ、基板Wに対する加熱または冷却を均一
に行なえるとともに、基板Wの搬出時の基板支持ピン8
…からアーム30への基板Wの受渡しも正確に行なうこ
とができる。As described above, according to this embodiment, the air between the lower surface of the substrate W and the heating plate (the heating plate 15 or the cooling plate 6) at the time of the lowering operation of the substrate W during the loading of the substrate W is supplied to the substrate W. Since the groove 20 is formed on the upper surface of the hot plate as an air escape path leading to the outer peripheral direction of the (hot plate), the side slip of the substrate W due to the air bearing during the loading of the substrate W is eliminated, and the predetermined substrate support is performed. The substrate W can be accurately loaded into the position, the heating or cooling of the substrate W can be performed uniformly, and the substrate support pins 8 when the substrate W is unloaded.
The transfer of the substrate W from the armature to the arm 30 can be performed accurately.
【0032】また、本実施例では、熱板上面に溝20を
形成して基板Wの搬入時の基板Wの位置ずれを防止した
ので、基板Wの位置ずれを防止するためのガイド部材が
不要となる。ガイド部材を設けた従来例では基板サイズ
に柔軟に対応できなかったが、本実施例によれば基板サ
イズが変更されても構成を変更することなく降下時の基
板Wの横滑りが防止できるし、溝20がアーム30のX
方向への移動の障害にもならない。Further, in this embodiment, since the groove 20 is formed on the upper surface of the heating plate to prevent the displacement of the substrate W when the substrate W is carried in, a guide member for preventing the displacement of the substrate W is unnecessary. Becomes In the conventional example provided with the guide member, it was not possible to flexibly cope with the substrate size, but according to the present embodiment, even if the substrate size is changed, it is possible to prevent the sideslip of the substrate W when descending without changing the configuration, Groove 20 is X of arm 30
It does not hinder the movement in the direction.
【0033】さらに、本実施例では、基板Wの搬入時の
エアーベアリングによる基板Wの横滑りを防止するため
に、熱板に支持される際の基板Wの姿勢や熱板の上面を
高精度に水平に保たなくても、ある程度水平に保たれて
いればよく、また、基板の降下速度をある程度速くする
こともできる。従って、基板支持ピン8…や熱板などの
組み付けに要する手間や時間を軽減させることができ、
処理効率を向上させることができる。Further, in this embodiment, in order to prevent the sideways sliding of the substrate W due to the air bearing when the substrate W is carried in, the posture of the substrate W when supported by the hot plate and the upper surface of the hot plate are accurately adjusted. Even if it is not kept horizontal, it may be kept horizontal to some extent, and the descending speed of the substrate can be increased to some extent. Therefore, it is possible to reduce the labor and time required for assembling the substrate support pins 8 ...
The processing efficiency can be improved.
【0034】なお、昇降昇降手段としてエアシリンダ1
0を使用し、その作動を低速で行うと、エアシリンダ1
0の特性として動作速度が不安定になり易いが、本実施
例では、基板支持ピン8…の降下速度をある程度速くし
ても基板Wの横滑りが防止できるので、エアシリンダ1
0を高速で使用できるから、相対昇降手段にエアシリン
ダ10を使用した場合でも、昇降動作が不安定になるこ
とを回避でき好都合である。The air cylinder 1 is used as an elevating means.
If 0 is used and the operation is performed at low speed, the air cylinder 1
Although the operating speed tends to be unstable as a characteristic of 0, in this embodiment, the side slip of the substrate W can be prevented even if the descending speed of the substrate supporting pins 8 is increased to some extent.
Since 0 can be used at high speed, even when the air cylinder 10 is used as the relative elevating means, it is convenient to avoid instability of the elevating operation.
【0035】また、相対昇降手段としてはエアシリンダ
10以外にも、例えば、ピン取付部材9にロッドを突設
するとともに、そのロッドにネジを形成し、一方、その
ネジに噛み合う内ネジを形成した内ネジ部材を電動モー
タで回転するように構成した、いわゆるボールネジの構
成など種々の構成で実現することもできる。In addition to the air cylinder 10, as the relative elevating means, for example, a rod is provided so as to project from the pin mounting member 9 and a screw is formed on the rod, while an inner screw meshing with the screw is formed. It is also possible to realize various structures such as a so-called ball screw structure in which the inner screw member is rotated by an electric motor.
【0036】なお、本実施例では、加熱プレート15
(冷却プレート6)は昇降せずに、基板支持ピン8を昇
降させることで、加熱プレート15(冷却プレート6)
と基板支持ピン8との間を相対昇降させるようにしてい
るが、これに限らず、基板支持ピン8は昇降されずに加
熱プレート15(冷却プレート6)を昇降させることで
加熱プレート15(冷却プレート6)と基板支持ピン8
との間を相対昇降させるようにしてもよい。In this embodiment, the heating plate 15
By moving the substrate support pins 8 up and down without moving the (cooling plate 6) up and down, the heating plate 15 (cooling plate 6)
Although the substrate support pin 8 is relatively moved up and down, the invention is not limited to this, and the substrate support pin 8 is not moved up and down and the heating plate 15 (cooling plate 6) is moved up and down. Plate 6) and substrate support pin 8
You may make it raise / lower relatively between and.
【0037】また、本実施例では、降下時の基板Wの横
滑りを、熱板の上面に溝20を形成することで防止して
いるので、実開平6-77231 号公報や実開平6-79140 号公
報に開示の装置のように新たな部品を必要とせず、構成
も簡単になり、また、これら従来技術のように強制的に
空気の流れを形成しないので、基板Wの汚染を招くなど
の不都合もない。Further, in this embodiment, the sideslip of the substrate W at the time of lowering is prevented by forming the groove 20 on the upper surface of the hot plate, and therefore, it is disclosed in Japanese Utility Model Laid-Open No. 6-77231 and Japanese Utility Model Laid-Open No. 6-79140. No new parts are required unlike the device disclosed in Japanese Patent Publication, the configuration is simple, and since the air flow is not forcibly formed unlike these conventional techniques, the substrate W is contaminated. There is no inconvenience.
【0038】また、上述した実施例は基板Wを熱板に近
接支持されるように構成しているが、この装置のプロキ
シミティギャップを小さくしても降下時の基板Wの横滑
りを好適に防止することができ、処理効率を低下させる
ことがない。Further, in the above-mentioned embodiment, the substrate W is constructed so as to be closely supported by the heating plate. However, even if the proximity gap of this apparatus is made small, the sideslip of the substrate W at the time of descending is preferably prevented. Therefore, the processing efficiency is not reduced.
【0039】なお、上述実施例のようなボール16…を
設けずに、冷却プレート6または加熱プレート15に密
着させて基板Wを接触載置するタイプの基板熱処理装置
であっても熱板上面に溝20を形成することで、降下時
の基板Wの横滑りを好適に防止することができる。な
お、このようなタイプの装置における基板支持位置のZ
方向の位置は、熱板(冷却プレート6または加熱プレー
ト15)の上面に基板Wが載置支持される位置になる。Even in the substrate heat treatment apparatus of the type in which the substrate W is placed in contact with the cooling plate 6 or the heating plate 15 without providing the balls 16 ... By forming the groove 20, it is possible to suitably prevent the substrate W from slipping sideways when it is lowered. It should be noted that the Z of the substrate supporting position in the apparatus of this type is
The position in the direction is the position where the substrate W is placed and supported on the upper surface of the hot plate (cooling plate 6 or heating plate 15).
【0040】次に、上記実施例に対する各種の変形例を
紹介するが、これら変形例は、上述した基板Wを接触支
持するタイプの装置などにも同様に変形実施可能であ
る。Next, various modifications of the above embodiment will be introduced, but these modifications can be similarly modified and implemented in an apparatus of the type which contacts and supports the substrate W described above.
【0041】上記実施例では、溝20を1本形成した
が、図4(a)の平面図に示すように、十字型に2本の
溝20を形成したり、同図(b)の平面図に示すよう
に、放射状に複数本(図では3本)の溝20を形成し
て、降下時の基板Wと熱板15(6)との間の空気の抜
け道を増やしてやってもよい。なお、溝20を複数本形
成する場合には、熱板15(6)上面の中心PCを通る
線分Lを仮想的に決め、この線分Lを挟んで左右対象に
なるように溝20を形成することが好ましい。In the above embodiment, one groove 20 is formed, but as shown in the plan view of FIG. 4A, two grooves 20 are formed in a cross shape or the plane of FIG. As shown in the figure, a plurality of (three in the figure) grooves 20 may be radially formed to increase the air passageway between the substrate W and the heating plate 15 (6) when descending. . When a plurality of grooves 20 are formed, a line segment L passing through the center PC of the upper surface of the heating plate 15 (6) is virtually determined, and the grooves 20 are symmetrically sandwiched across the line segment L. It is preferably formed.
【0042】また、溝20の深さは、図5(a)の縦断
面図に示すように、均一であってもよいが、同図(b)
の縦断面図に示すように、外周方向に近づくに従って深
くなるように構成して、降下時の基板Wの下面と熱板1
5(6)との間の空気を熱板15(6)の外周方向へ導
き易くしてもよい。The depth of the groove 20 may be uniform as shown in the vertical sectional view of FIG. 5 (a), but it is also shown in FIG. 5 (b).
As shown in the vertical sectional view of FIG.
The air between 5 (6) may be easily guided to the outer peripheral direction of the hot plate 15 (6).
【0043】さらに、溝20の断面形状は、図2に示す
ように半円形であってもよいし、図6の断面図に示すよ
うに、矩形やUの字型、Vの字型などであってもよい。
なお、図6(a)のように溝20の側面と底面とが略直
交していると溝20の掃除がし難くなるので、そのよう
な点を考慮すると、図2や図6(b)、(c)に示すよ
うに、半円形やUの字型、Vの字型などの方が好まし
い。Further, the cross-sectional shape of the groove 20 may be semicircular as shown in FIG. 2, or may be rectangular, U-shaped, V-shaped or the like as shown in the sectional view of FIG. It may be.
If the side surface and the bottom surface of the groove 20 are substantially orthogonal to each other as shown in FIG. 6A, it becomes difficult to clean the groove 20. Therefore, in consideration of such a point, the groove 20 and FIG. , (C), a semicircular shape, a U-shape, a V-shape and the like are preferable.
【0044】[0044]
【発明の効果】以上の説明から明らかなように、本発明
によれば、基板の下面と熱板との接近時にその基板下面
と熱板との間の空気を熱板の外周方向へ導く、空気の抜
け道としての溝を熱板の上面に形成したので、基板の下
面と熱板との接近時の基板のエアーベアリングによる横
滑りを防止することができる。As is apparent from the above description, according to the present invention, when the lower surface of the substrate and the hot plate approach each other, the air between the lower surface of the substrate and the hot plate is guided in the outer peripheral direction of the hot plate. Since the groove as an air escape path is formed on the upper surface of the hot plate, it is possible to prevent the side surface of the substrate from slipping due to the air bearing when the lower surface of the substrate and the hot plate approach each other.
【0045】また、本発明は、基板の下面と熱板との接
近時の基板の横滑りを防止するために熱板上面に溝を形
成して対応したことによって、従来技術と比較して以下
のような効果もある。Further, according to the present invention, a groove is formed on the upper surface of the hot plate to prevent the side surface of the substrate from slipping when the lower surface of the substrate and the hot plate approach each other. There is also such an effect.
【0046】(1)基板の下面と熱板との接近時の基板
の横滑りを防止するためのガイド部材が不要であり、ま
た、基板サイズの変更に柔軟に対応でき、また、基板搬
送ロボットによる基板の搬送の妨げにならない。(1) No guide member is required to prevent the side surface of the substrate from slipping when the lower surface of the substrate and the heating plate approach each other, and the size of the substrate can be flexibly changed. Does not hinder the transfer of substrates.
【0047】(2)本発明では、基板の姿勢や熱板の上
面がある程度水平に保たれていればよく、基板支持ピン
や熱板などの組み付けに要する手間や時間を軽減させる
ことができ、基板と熱板との接近速度をある程度速くし
ても基板の横滑りを防止できるので、処理効率を向上さ
せることができる。(2) In the present invention, it suffices that the posture of the substrate and the upper surface of the heating plate are kept horizontal to some extent, and the labor and time required for assembling the substrate support pins and the heating plate can be reduced, Even if the approaching speed of the substrate and the hot plate is increased to some extent, the sideslip of the substrate can be prevented, so that the processing efficiency can be improved.
【0048】(3)基板を熱板に近接支持される装置の
場合も、その装置のプロキシミティギャップを小さくし
て基板の下面と熱板との接近時の基板の横滑りを防止す
ることができ、処理効率の低下を招かない。(3) Even in the case of a device in which the substrate is closely supported by the hot plate, the proximity gap of the device can be made small to prevent the side slip of the substrate when the lower surface of the substrate and the hot plate approach each other. The processing efficiency does not decrease.
【0049】(4)実開平6-77231 号公報や実開平6-79
140 号公報に開示の装置のように新たな部品を必要とせ
ず、構成も簡単になり、また、これら従来技術のように
強制的に空気の流れを形成しないので、基板の汚染を招
くなどの都合もない。(4) Japanese Utility Model Publication No. 6-77231 and Japanese Utility Model Publication No. 6-79
Unlike the device disclosed in Japanese Patent Publication No. 140, no new parts are required, the configuration is simple, and since the air flow is not forcedly formed unlike those of the prior art, it may cause contamination of the substrate. It's not convenient.
【図1】本発明に係る基板熱処理装置の全体構成を示す
縦断面図である。FIG. 1 is a vertical sectional view showing the overall configuration of a substrate heat treatment apparatus according to the present invention.
【図2】要部の斜視図である。FIG. 2 is a perspective view of a main part.
【図3】本実施例装置の基板搬入・搬出動作を説明する
ための図である。FIG. 3 is a diagram for explaining a substrate loading / unloading operation of the apparatus of this embodiment.
【図4】変形例の構成を示す平面図である。FIG. 4 is a plan view showing a configuration of a modified example.
【図5】別の変形例の構成を示す断面図である。FIG. 5 is a cross-sectional view showing the configuration of another modification.
【図6】他の変形例の構成を示す断面図である。FIG. 6 is a cross-sectional view showing the configuration of another modification.
3 … 基板冷却装置(基板熱処理装置) 4 … 基板加熱装置(基板熱処理装置) 6 … 冷却プレート(熱板) 8 … 基板支持ピン(基板支持部材) 10 … エアーシリンダ(相対昇降手段) 11 … 伝熱プレート 12 … 水冷板 13 … ペルチェ素子 15 … 加熱プレート(熱板) 20 … 溝 W … 基板 3 ... Substrate cooling device (substrate heat treatment device) 4 ... Substrate heating device (substrate heat treatment device) 6 ... Cooling plate (hot plate) 8 ... Substrate support pin (substrate support member) 10 ... Air cylinder (relative lifting means) 11 ... Transmission Heat plate 12 ... Water cooling plate 13 ... Peltier element 15 ... Heating plate (heat plate) 20 ... Groove W ... Substrate
Claims (1)
とも一方を備え、上面に基板を支持して加熱または冷却
を行う熱板と、 前記基板を載置支持する基板支持部材と、 前記熱板と前記基板支持部材とを相対昇降させる相対昇
降手段とを備えた基板熱処理装置において、 前記熱板と前記基板支持部材との相対昇降動作にともな
う前記基板下面と前記熱板との接近時に、その基板下面
と前記熱板との間の空気を熱板の外周方向へ導く溝を前
記熱板の上面に形成したことを特徴とする基板熱処理装
置。1. A hot plate which comprises at least one of a heating unit and a cooling unit, supports a substrate on an upper surface to heat or cool the substrate, a substrate support member for mounting and supporting the substrate, and the hot plate. A substrate heat treatment apparatus comprising a relative elevating means for relatively elevating and lowering the substrate supporting member, wherein the substrate is brought into contact with the lower surface of the substrate and the thermal plate when the relative elevating operation of the thermal plate and the substrate supporting member is performed. A substrate heat treatment apparatus, wherein a groove for guiding air between a lower surface and the hot plate toward an outer peripheral direction of the hot plate is formed on the upper surface of the hot plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32988895A JPH09148417A (en) | 1995-11-24 | 1995-11-24 | Heat-treating device for substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32988895A JPH09148417A (en) | 1995-11-24 | 1995-11-24 | Heat-treating device for substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09148417A true JPH09148417A (en) | 1997-06-06 |
Family
ID=18226381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32988895A Pending JPH09148417A (en) | 1995-11-24 | 1995-11-24 | Heat-treating device for substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09148417A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11297789A (en) * | 1998-04-09 | 1999-10-29 | Tokyo Electron Ltd | Treating device |
KR100315459B1 (en) * | 1999-12-31 | 2001-11-28 | 황인길 | Cooling chamber of rapid thermal processing apparatus with dual process chamber |
JP2002057209A (en) * | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | Single-wafer processing apparatus and single-wafer processing method |
KR100338165B1 (en) * | 1997-06-18 | 2002-07-18 | 프란츠 숨니치 | Process and Device for Handling Disk-like Objects, Especially Silicon Wafers |
KR100711729B1 (en) * | 2005-10-25 | 2007-04-25 | 세메스 주식회사 | Cooling plate and baking unit |
CN103779257A (en) * | 2014-02-20 | 2014-05-07 | 江阴长电先进封装有限公司 | Hot plate preventing drifting of wafer during placement |
JP2016537663A (en) * | 2013-09-27 | 2016-12-01 | エーエスエムエル ネザーランズ ビー.ブイ. | Support table for lithographic apparatus, lithographic apparatus and device manufacturing method |
JP2017515146A (en) * | 2014-04-30 | 2017-06-08 | エーエスエムエル ネザーランズ ビー.ブイ. | Support table for lithographic apparatus, lithographic apparatus and device manufacturing method |
KR20180061683A (en) * | 2016-11-30 | 2018-06-08 | 세메스 주식회사 | Substrate supporting unit, heat treatment unit and substrate treating apparatus including the same |
KR20180125421A (en) * | 2018-11-14 | 2018-11-23 | 세메스 주식회사 | Substrate supporting unit, heat treatment unit and substrate treating apparatus including the same |
-
1995
- 1995-11-24 JP JP32988895A patent/JPH09148417A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100338165B1 (en) * | 1997-06-18 | 2002-07-18 | 프란츠 숨니치 | Process and Device for Handling Disk-like Objects, Especially Silicon Wafers |
JPH11297789A (en) * | 1998-04-09 | 1999-10-29 | Tokyo Electron Ltd | Treating device |
KR100315459B1 (en) * | 1999-12-31 | 2001-11-28 | 황인길 | Cooling chamber of rapid thermal processing apparatus with dual process chamber |
JP2002057209A (en) * | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | Single-wafer processing apparatus and single-wafer processing method |
KR100711729B1 (en) * | 2005-10-25 | 2007-04-25 | 세메스 주식회사 | Cooling plate and baking unit |
US7332691B2 (en) | 2005-10-25 | 2008-02-19 | Semes Co., Ltd. | Cooling plate, bake unit, and substrate treating apparatus |
US9835957B2 (en) | 2013-09-27 | 2017-12-05 | Asml Netherlands B.V. | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method |
JP2016537663A (en) * | 2013-09-27 | 2016-12-01 | エーエスエムエル ネザーランズ ビー.ブイ. | Support table for lithographic apparatus, lithographic apparatus and device manufacturing method |
CN103779257A (en) * | 2014-02-20 | 2014-05-07 | 江阴长电先进封装有限公司 | Hot plate preventing drifting of wafer during placement |
JP2017515146A (en) * | 2014-04-30 | 2017-06-08 | エーエスエムエル ネザーランズ ビー.ブイ. | Support table for lithographic apparatus, lithographic apparatus and device manufacturing method |
KR20180061683A (en) * | 2016-11-30 | 2018-06-08 | 세메스 주식회사 | Substrate supporting unit, heat treatment unit and substrate treating apparatus including the same |
US10763152B2 (en) | 2016-11-30 | 2020-09-01 | Semes Co., Ltd. | Substrate support unit, heat treatment unit, and substrate treating apparatus including the same |
KR20180125421A (en) * | 2018-11-14 | 2018-11-23 | 세메스 주식회사 | Substrate supporting unit, heat treatment unit and substrate treating apparatus including the same |
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