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JPH09134932A - Wire bonding and device - Google Patents

Wire bonding and device

Info

Publication number
JPH09134932A
JPH09134932A JP7315837A JP31583795A JPH09134932A JP H09134932 A JPH09134932 A JP H09134932A JP 7315837 A JP7315837 A JP 7315837A JP 31583795 A JP31583795 A JP 31583795A JP H09134932 A JPH09134932 A JP H09134932A
Authority
JP
Japan
Prior art keywords
wire
bonding
frequency
capillary
resonance frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7315837A
Other languages
Japanese (ja)
Inventor
Satoru Uemura
哲 植村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mechatronics Co Ltd
Original Assignee
Toshiba Mechatronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Mechatronics Co Ltd filed Critical Toshiba Mechatronics Co Ltd
Priority to JP7315837A priority Critical patent/JPH09134932A/en
Publication of JPH09134932A publication Critical patent/JPH09134932A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
    • H01L2924/10161Shape being a cuboid with a rectangular active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To make it possible to prevent damage to wire loops accompanying the resonance phenomenon of the wire loops. SOLUTION: This bonding device 10 is formed into a structure, wherein a capillary 21 for holding insertedly a wire 5 is driven while being controlled and bonding points on electrodes on a semiconductor pellet and bonding points on leads of a lead frame 3 are connected with each other using the wire. In this case, the device 10 is provided with a resonance frequency calculating part 16 for calculating the resonance frequency of wire loops, which are formed between the bonding points by the wire, an ultrasonic frequency storage part 17 for storing the ultrasonic frequency of ultrasonic vibrations which are given to the capillary 21, a comparison decision part 18, which compares the above resonance frequency with the above ultrasonic frequency and decides the concord between both of the resonance and ultrasonc frequencies or the discord between both of the resonance and ultrasonic frequencies, and a control device 14, which drives the above capillary while controlling the capillary for executing a wire bonding in the case where the above resonance frequency is discordant from the above ultrasonic frequency in the part 18.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体製造工程に
おけるワイヤボンディング方法及びワイヤボンディング
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method and wire bonding apparatus in a semiconductor manufacturing process.

【0002】[0002]

【従来の技術】半導体製造工程におけるワイヤボンディ
ング工程では、図5及び図6に示すように、半導体ペレ
ット1の複数の電極2が、リードフレーム3の複数本の
リード4のそれぞれに、ワイヤ5を介して電気的に接続
され、両者間にワイヤループ6が形成される。このワイ
ヤボンディングはワイヤボンディング装置によって実施
される。
2. Description of the Related Art In a wire bonding process in a semiconductor manufacturing process, as shown in FIGS. 5 and 6, a plurality of electrodes 2 of a semiconductor pellet 1 connect a wire 5 to each of a plurality of leads 4 of a lead frame 3. Electrically connected to each other, and a wire loop 6 is formed between them. This wire bonding is performed by a wire bonding device.

【0003】つまり、ワイヤボンディング装置は、キャ
ピラリ先端から突出したワイヤ5とトーチ電極との間で
放電を生じさせてワイヤ5の先端に溶融ボールを形成
し、このボールを半導体ペレット1の電極2のボンディ
ング点に接合後、ワイヤ5を導出させつつキャピラリを
リードフレーム3のリード4上に移動させ、このリード
4のボンディング点にワイヤ5を接合して、電極2とリ
ード4とを電気的に接続、即ちワイヤボンディングして
いる。ワイヤ5と電極2及びリード4の各ボンディング
点との接合は、キャピラリを超音波振動することにより
なされる。
That is, in the wire bonding apparatus, a discharge is generated between the wire 5 protruding from the tip of the capillary and the torch electrode to form a molten ball at the tip of the wire 5, and this ball is attached to the electrode 2 of the semiconductor pellet 1. After joining at the bonding point, the capillary is moved onto the lead 4 of the lead frame 3 while leading out the wire 5, and the wire 5 is joined at the bonding point of the lead 4 to electrically connect the electrode 2 and the lead 4. That is, wire bonding is performed. The wire 5 and each bonding point of the electrode 2 and the lead 4 are joined by ultrasonically vibrating the capillary.

【0004】[0004]

【発明が解決しようとする課題】上記ワイヤボンディン
グ装置では、半導体ペレット1の電極2のボンディング
点とリードフレーム3のリード4のボンディング点とを
ボンディングするワイヤ5の直径、材質或いはワイヤル
ープ6長によっては、ワイヤループ6の共振周波数がワ
イヤボンディング装置のキャピラリの超音波振動数と一
致して、ワイヤループ6が共振してしまうことがある。
そして、このワイヤループ6の共振現象の結果、ワイヤ
ループ6における電極2とリード4との接合部7に損傷
が生じ、ボンディング不良となる虞れがある。
In the wire bonding apparatus described above, the diameter of the wire 5 for bonding the bonding point of the electrode 2 of the semiconductor pellet 1 and the bonding point of the lead 4 of the lead frame 3, the material, or the length of the wire loop 6 is used. In some cases, the resonance frequency of the wire loop 6 matches the ultrasonic frequency of the capillary of the wire bonding apparatus, and the wire loop 6 may resonate.
Then, as a result of the resonance phenomenon of the wire loop 6, the bonding portion 7 between the electrode 2 and the lead 4 in the wire loop 6 may be damaged, resulting in defective bonding.

【0005】本発明の課題は、上述の事情を考慮してな
されたものであり、ワイヤループの共振現象に伴うボン
ディング不良を防止できるワイヤボンディング方法及び
ワイヤボンディング装置を提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a wire bonding method and a wire bonding apparatus, which have been made in consideration of the above circumstances, and which can prevent defective bonding due to a resonance phenomenon of a wire loop.

【0006】[0006]

【課題を解決するための手段】請求項1に記載の発明
は、ボンディング点間に形成されるワイヤループの共振
周波数がワイヤボンディング装置の機械振動数とは不一
致となるようにボンディング点位置を決定してボンディ
ングすることを特徴とするものである。
According to a first aspect of the present invention, the position of the bonding point is determined so that the resonance frequency of the wire loop formed between the bonding points does not match the mechanical frequency of the wire bonding apparatus. Then, the bonding is performed.

【0007】請求項2に記載の発明は、請求項1に記載
の発明において、上記機械振動数は、ワイヤボンディン
グ時にキャピラリに付与される超音波振動の振動数であ
るものである。
According to a second aspect of the present invention, in the first aspect of the invention, the mechanical frequency is a frequency of ultrasonic vibration applied to the capillary during wire bonding.

【0008】請求項3に記載の発明は、ワイヤを挿通保
持するキャピラリを駆動制御し、ボンディング点間を上
記ワイヤを用いて接続するワイヤボンディング装置にお
いて、上記ボンディング点間に上記ワイヤによって形成
されるワイヤループの共振周波数を算出する共振周波数
演算手段と、上記ワイヤボンディング装置の機械振動数
を記憶する記憶手段と、上記共振周波数と上記機械振動
数とを比較し、両者の一致、不一致を判定する比較判定
手段と、上記比較判定手段の結果に基づき上記キャピラ
リを駆動制御する制御手段と、を有するものである。
According to a third aspect of the present invention, in a wire bonding apparatus for driving and controlling a capillary for inserting and holding a wire, and connecting the bonding points by using the wire, the wire is formed between the bonding points. Resonance frequency calculation means for calculating the resonance frequency of the wire loop, storage means for storing the mechanical frequency of the wire bonding device, and the resonance frequency and the mechanical frequency are compared, and it is determined whether they match or not. The comparison determination means and the control means for driving and controlling the capillary based on the result of the comparison determination means are included.

【0009】請求項4に記載の発明は、請求項3に記載
の発明において、制御手段は、比較判定手段にて共振周
波数と機械振動数とが不一致と判定された場合に、ワイ
ヤボンディングを実施すべくキャピラリを駆動制御する
ものである。
According to a fourth aspect of the present invention, in the third aspect of the invention, the control means performs the wire bonding when the comparison determination means determines that the resonance frequency and the mechanical frequency do not match. In order to do so, the capillaries are driven and controlled.

【0010】請求項5に記載の発明は、請求項3又は4
に記載の発明において、制御手段は、比較判定手段にて
共振周波数と機械振動数とが一致すると判定された場合
に、ワイヤループ長を変更してこのワイヤループの共振
周波数と上記機械振動数とを不一致状態にすべくキャピ
ラリを駆動制御するものである。
[0010] The invention described in claim 5 is the invention according to claim 3 or 4.
In the invention described in (1), the control means changes the wire loop length to determine the resonance frequency of the wire loop and the mechanical frequency when the comparison determination means determines that the resonance frequency and the mechanical frequency match. The capillaries are driven and controlled to bring the two into disagreement.

【0011】請求項6に記載の発明は、請求項3又は4
に記載の発明において、制御装置は、比較判定手段にて
共振周波数と機械振動数とが一致すると判定された場合
にキャピラリの駆動を停止させるものである。
The invention according to claim 6 is the invention according to claim 3 or 4.
In the invention described in (1), the control device stops the driving of the capillary when the comparison determination unit determines that the resonance frequency and the mechanical frequency match.

【0012】請求項7に記載の発明は、請求項3〜6の
いずれか一に記載の発明において、機械振動数は、ワイ
ヤボンディング時にキャピラリに付与される超音波振動
の振動数であるものである。
The invention according to claim 7 is the invention according to any one of claims 3 to 6, wherein the mechanical frequency is a frequency of ultrasonic vibration applied to the capillary during wire bonding. is there.

【0013】請求項1〜7に記載の発明には、次の作用
がある。2つのボンディング点間に形成されるワイヤル
ープの共振周波数と、ワイヤボンディング装置の機械振
動数とが不一致状態となるようにワイヤボンディングが
実施されるので、ワイヤループが共振することによるボ
ンディング不良が防止できる。
The first to seventh aspects of the present invention have the following effects. Since the wire bonding is performed so that the resonance frequency of the wire loop formed between the two bonding points and the mechanical frequency of the wire bonding device do not match with each other, defective bonding due to resonance of the wire loop is prevented. it can.

【0014】[0014]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図1は、本発明に係るワイヤボン
ディング装置の一つの実施の形態を示す構成図である。
図2は、図1の半導体ペレット及びリードの一部を示す
部分平面図である。図3は、図2のIII 部拡大図であ
る。図4は、図1のワイヤボンディング装置が実施する
ワイヤボンディング方法を示すフローチャートである。
図5は、ワイヤボンディングされた半導体ペレットとリ
ードフレームとを示す平面図である。図6は、図5のVI
-VI 線に沿う断面図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram showing one embodiment of a wire bonding apparatus according to the present invention.
FIG. 2 is a partial plan view showing a part of the semiconductor pellet and the lead of FIG. FIG. 3 is an enlarged view of part III in FIG. FIG. 4 is a flowchart showing a wire bonding method implemented by the wire bonding apparatus of FIG.
FIG. 5 is a plan view showing a wire-bonded semiconductor pellet and a lead frame. FIG. 6 shows VI of FIG.
FIG. 6 is a cross-sectional view taken along the line VI.

【0015】ワイヤボンディング装置10は、半導体ペ
レット1における電極2上のボンディング点とリードフ
レーム3におけるリード4上のボンディング点とをワイ
ヤ5を用いて接続し、両者間にワイヤループ6を形成す
るものであり、ガイドレール11、XYテーブル12、
ボンディングヘッド13、制御手段としての制御装置1
4、ボンディング点記憶部15、共振周波数演算手段と
しての共振周波数演算部16、記憶手段としての超音波
振動数記憶部17、比較判定手段としての比較判定部1
8を有して構成される。
The wire bonding device 10 connects a bonding point on the electrode 2 of the semiconductor pellet 1 and a bonding point on the lead 4 of the lead frame 3 with a wire 5 to form a wire loop 6 therebetween. The guide rail 11, the XY table 12,
Bonding head 13, control device 1 as control means
4, bonding point storage unit 15, resonance frequency calculation unit 16 as resonance frequency calculation unit, ultrasonic frequency storage unit 17 as storage unit, comparison determination unit 1 as comparison determination unit
8 is configured.

【0016】ガイドレール11は、前工程にて半導体ペ
レット1がマウントされたリードフレーム3の搬送を案
内し、一対設置されている。
The guide rails 11 guide the conveyance of the lead frame 3 on which the semiconductor pellets 1 are mounted in the previous step, and are installed in pairs.

【0017】XYテーブル12は、ボンディング領域に
対応するガイドレール11の側方に設置され、ガイドレ
ール11の搬送方向及びこれと直交する方向に移動可能
に構成される。このXYテーブル12上にボンディング
ヘッド13が載置される。
The XY table 12 is installed on the side of the guide rail 11 corresponding to the bonding area, and is movable in the carrying direction of the guide rail 11 and the direction orthogonal thereto. The bonding head 13 is placed on the XY table 12.

【0018】このボンディングヘッド13は、ボンディ
ングアーム19及びトーチ電極20を備え、ボンディン
グアーム19の先端部に、ワイヤ5を挿通保持するキャ
ピラリ21が挿着される。ボンディングアーム19は図
示しないアーム駆動機構により上下動させられる。ま
た、トーチ電極20は、その先端部がキャピラリ21の
直下に移動可能とされて、キャピラリ21から突出した
ワイヤ5とトーチ電極20との間に放電を生じさせ、ワ
イヤ5の先端に溶融ボール22を形成する。
The bonding head 13 includes a bonding arm 19 and a torch electrode 20, and a capillary 21 for inserting and holding the wire 5 is attached to the tip of the bonding arm 19. The bonding arm 19 is moved up and down by an arm driving mechanism (not shown). Further, the torch electrode 20 has a tip end movable to a position directly below the capillary 21 to cause an electric discharge between the wire 5 protruding from the capillary 21 and the torch electrode 20, and the molten ball 22 is attached to the tip of the wire 5. To form.

【0019】ボンディング点記憶部15には、半導体ペ
レット1における複数個の電極2上の各ボンディング点
の位置、及びリードフレーム3における複数本のリード
4上の各ボンディング点の位置がそれぞれ記憶されてい
る。
The bonding point storage unit 15 stores the positions of the bonding points on the plurality of electrodes 2 in the semiconductor pellet 1 and the positions of the bonding points on the plurality of leads 4 in the lead frame 3, respectively. There is.

【0020】制御装置14は、XYテーブル12、ボン
ディングヘッド13、ボンディング点記憶部15、共振
周波数演算部16、比較判定部18と電気的に接続さ
れ、これらのXYテーブル12、ボンディングヘッド1
3、共振周波数演算部16及び比較判定部18を制御す
る。
The control device 14 is electrically connected to the XY table 12, the bonding head 13, the bonding point storage unit 15, the resonance frequency calculation unit 16 and the comparison and determination unit 18, and these XY table 12 and the bonding head 1 are connected.
3. Control the resonance frequency calculation unit 16 and the comparison determination unit 18.

【0021】つまり、制御装置14は、ボンディング点
記憶部に記憶されたボンディング点、又は、後述の如く
位置修正されたボンディング点に、XYテーブル12及
びボンディングヘッド13のボンディングアーム19を
操作することにて、キャピラリ21を順次移動させワイ
ヤボンディングを実施させる。このワイヤボンディング
動作は、先端に溶融ボール22が形成されたワイヤ5を
挿通保持したキャピラリ21を半導体ペレット1の電極
2上に下降させ、ワイヤ5の先端の溶融ボール22を、
この電極2のボンディング点に圧接させつつ超音波振動
を加えて接合し、その後、キャピラリ21を所定の移動
軌跡にしたがってリードフレーム3のリード4上に移動
させ、このワイヤ5をリード4のボンディング点に圧接
させつつ超音波振動を加えることにて接合し、その後、
キャピラリ21を所定量上昇させ、ワイヤ5を切断する
ことにてなされる。
That is, the control device 14 operates the bonding arm 19 of the XY table 12 and the bonding head 13 to the bonding point stored in the bonding point storage unit or the bonding point whose position is corrected as described later. Then, the capillaries 21 are sequentially moved to perform wire bonding. In this wire bonding operation, the capillary 21 in which the wire 5 having the molten ball 22 formed at the tip is inserted and held is lowered onto the electrode 2 of the semiconductor pellet 1, and the molten ball 22 at the tip of the wire 5 is
Ultrasonic vibration is applied to the bonding point of the electrode 2 while bonding it under pressure, and then the capillary 21 is moved onto the lead 4 of the lead frame 3 according to a predetermined movement trajectory, and the wire 5 is bonded to the bonding point of the lead 4. Bonding by applying ultrasonic vibration while pressing it to
This is done by raising the capillary 21 by a predetermined amount and cutting the wire 5.

【0022】これにより、上記電極2及びリード4が、
ワイヤ5にてループ形状に形成されたワイヤループ6に
より接続される。
As a result, the electrode 2 and the lead 4 are
The wires 5 are connected by a wire loop 6 formed in a loop shape.

【0023】ここで、超音波振動数記憶部17には、ワ
イヤボンディング時にボンディングアーム19を介して
キャピラリ21に付与する機械的振動としての超音波振
動の振動数(超音波振動数)が記憶されている。
Here, the ultrasonic frequency storage unit 17 stores the frequency of ultrasonic vibration (ultrasonic frequency) as mechanical vibration applied to the capillary 21 via the bonding arm 19 during wire bonding. ing.

【0024】また、制御装置14は共振周波数演算部1
6を制御し、この共振周波数演算部16は、電極2とリ
ード4との両ボンディング点間の距離、ワイヤループ6
のループ形状等の条件に基づいて、ループ形成のために
必要なワイヤループ長を算出し、次に、このワイヤルー
プ長、ワイヤ5の直径及びワイヤ5の材質に基づいて、
形成されるワイヤループ6の共振周波数を算出する。上
記電極2とリード4の両ボンディング点間距離は、ボン
ディング点記憶部15に記憶された情報に基づいて算出
される。
Further, the control device 14 includes the resonance frequency calculation unit 1
6, the resonance frequency calculation unit 16 controls the distance between the bonding points of the electrode 2 and the lead 4, the wire loop 6
Based on the conditions such as the loop shape, the wire loop length required for loop formation is calculated, and then based on this wire loop length, the diameter of the wire 5 and the material of the wire 5,
The resonance frequency of the formed wire loop 6 is calculated. The distance between the bonding points of the electrode 2 and the lead 4 is calculated based on the information stored in the bonding point storage unit 15.

【0025】更に、制御装置14は比較判定部18を制
御し、この比較判定部18は、共振周波数演算部16に
て算出された共振周波数と、超音波振動数記憶部17に
記憶された超音波振動数とを比較して、両者の一致、不
一致を判定する。この比較判定部18の判定結果は制御
装置14へ出力される。尚、本明細書において、共振周
波数と超音波振動数が一致するとは、両者が完全に一致
する場合に加え、共振周波数が超音波振動数に対してあ
る一定の幅内に入る場合も含むものとする。
Further, the control device 14 controls the comparison / determination unit 18, which compares the resonance frequency calculated by the resonance frequency calculation unit 16 with the ultrasonic frequency stored in the ultrasonic frequency storage unit 17. The sound wave frequency is compared to determine whether or not they match. The determination result of the comparison / determination unit 18 is output to the control device 14. In the present specification, the term “resonance frequency and ultrasonic frequency match” includes not only the case where the two completely match but also the case where the resonance frequency falls within a certain range with respect to the ultrasonic frequency. .

【0026】制御装置14は、比較判定部18の判定結
果において、ワイヤループ6の共振周波数とキャピラリ
21に付与される超音波振動数とが不一致の場合に、ボ
ンディング点記憶部15に記憶された電極2及びリード
4上の各ボンディング点にキャピラリ21を移動してワ
イヤボンディングを実施する。上記共振周波数と超音波
振動数とが一致した場合に、制御装置14は、リード4
上のボンディング点をワイヤループ6の形成方向(図2
中のA)にずらし量Lだけ位置修正し、この位置修正し
たリード4上のボンディング点と、ボンディング点記憶
部15に記憶された電極2上のボンディング点とをワイ
ヤ5を用いてワイヤボンディングする。上記ずらし量L
は制御装置14にプログラム設定可能とされ、図示例で
は、XYテーブル12が移動するX方向にΔX、Y方向
にΔY移動した値であり、ボンディング点修正後のワイ
ヤループ長に基づくワイヤループ6の共振周波数が、キ
ャピラリ21に付与される超音波振動数と不一致状態と
なるように設定される。
The controller 14 stores the data in the bonding point memory 15 when the resonance frequency of the wire loop 6 and the ultrasonic frequency applied to the capillary 21 do not match in the judgment result of the comparison judgment unit 18. The capillary 21 is moved to each bonding point on the electrode 2 and the lead 4 to perform wire bonding. When the resonance frequency matches the ultrasonic frequency, the controller 14 causes the lead 4
The bonding point on the upper side corresponds to the forming direction of the wire loop 6 (see FIG. 2).
The position is corrected by the shift amount L in A), and the position-corrected bonding point on the lead 4 and the bonding point on the electrode 2 stored in the bonding point storage unit 15 are wire-bonded using the wire 5. . The above shift amount L
Is a value that can be programmed in the control device 14, and in the illustrated example, is a value obtained by ΔX movement in the X direction and ΔY movement in the Y direction in which the XY table 12 moves. The resonance frequency is set to be inconsistent with the ultrasonic frequency applied to the capillary 21.

【0027】次に、作用を図4に基づいて説明する。ス
タート指令が制御装置14に入力されると、制御装置1
4が共振周波数演算部16を制御し、この共振周波数演
算部16は、ボンディング点記憶部15に記憶された半
導体ペレット1の電極2上のボンディング点と、リード
フレーム3のリード4上のボンディング点に関する情報
等から、ワイヤループ6のループワイヤ長を算出し、
(ステップ)、引き続き、このワイヤループ6の共振
周波数を算出する(ステップ)。次に、制御装置14
は、比較判定部18を制御し、この比較判定部18は、
共振周波数演算部16にて算出されたワイヤループ6の
共振周波数と、超音波振動数記憶部17に記憶されキャ
ピラリ21に付与される超音波振動数とを比較し、両者
の一致、不一致を判定する(ステップ)。
Next, the operation will be described with reference to FIG. When a start command is input to the control device 14, the control device 1
4 controls the resonance frequency calculation unit 16, and the resonance frequency calculation unit 16 stores the bonding point on the electrode 2 of the semiconductor pellet 1 stored in the bonding point storage unit 15 and the bonding point on the lead 4 of the lead frame 3. The loop wire length of the wire loop 6 is calculated from the information about
(Step), subsequently, the resonance frequency of the wire loop 6 is calculated (Step). Next, the control device 14
Controls the comparison determination unit 18, and the comparison determination unit 18
The resonance frequency of the wire loop 6 calculated by the resonance frequency calculation unit 16 is compared with the ultrasonic frequency stored in the ultrasonic frequency storage unit 17 and applied to the capillary 21 to determine whether they match or not match. Do (step).

【0028】制御装置14は、比較判定部18において
共振周波数と超音波振動数とが不一致と判定された場合
に、ボンディング点記憶部15に記憶されたボンディン
グ点にワイヤボンディングを実施し(ステップ)、一
致の場合に、リード4上のボンディング点を、ワイヤル
ープ6の形成方向Aにずらし量Lだけ位置修正し(ステ
ップ)、ボンディング点記憶部15に記憶された電極
2上のボンディング点と上記位置修正されたリード4上
のボンディング点とをワイヤボンディングする(ステッ
プ)。
When the comparison determination unit 18 determines that the resonance frequency and the ultrasonic frequency do not match, the control device 14 performs wire bonding at the bonding point stored in the bonding point storage unit 15 (step). , The position of the bonding point on the lead 4 is corrected in the forming direction A of the wire loop 6 by an amount L (step), and the bonding point on the electrode 2 stored in the bonding point storage unit 15 Wire bonding is performed with the bonding point on the lead 4 whose position has been corrected (step).

【0029】制御装置14は、今回実施されたワイヤボ
ンディングが電極2及びリード4上の最終のボンディン
グ点におけるものであるか否かを判定し(ステップ
)、最終でない場合には同一の半導体ペレット1につ
いて上述のワイヤボンディングを繰り返し、最終の場合
には、この半導体ペレット1についてのワイヤボンディ
ングを終了する。
The controller 14 determines whether or not the wire bonding performed this time is at the final bonding point on the electrode 2 and the lead 4 (step), and if not, the same semiconductor pellet 1 The wire bonding described above is repeated, and in the final case, the wire bonding for this semiconductor pellet 1 is completed.

【0030】上記実施の形態によれば、半導体ペレット
1の電極2とリードフレーム3のリード4における各ボ
ンディング点間に形成されるワイヤループ6の共振周波
数と、ボンディングアーム19がキャピラリ21に付与
する超音波振動の振動数(超音波振動数)とが不一致の
状態で、ワイヤ5を用いてワイヤボンディングが実施さ
れるので、他の組のボンディング中も含めて、ワイヤボ
ンディング時にワイヤループ6が共振せず、ワイヤルー
プ6と電極2及びリード4との接合部7(図6)が上記
共振現象により損傷するといったボンディング不良を防
止できる。
According to the above embodiment, the resonance frequency of the wire loop 6 formed between the bonding points of the electrode 2 of the semiconductor pellet 1 and the lead 4 of the lead frame 3 and the bonding arm 19 are applied to the capillary 21. Since wire bonding is performed using the wire 5 in a state where the frequency of ultrasonic vibration (ultrasonic frequency) does not match, the wire loop 6 resonates during wire bonding, including during bonding of another set. Without doing so, it is possible to prevent a bonding failure such that the joint portion 7 (FIG. 6) of the wire loop 6 with the electrode 2 and the lead 4 is damaged by the resonance phenomenon.

【0031】尚、上記実施の形態の特に図4では、1組
のボンディング点間にワイヤループが形成された後に次
のワイヤループ長を算出する例を説明したが、例えば1
個の半導体ペレットにおいて形成される全てのワイヤル
ープのループワイヤ長、共振周波数をボンディング前に
求めておくようにしても良い。
In the above embodiment, particularly in FIG. 4, an example of calculating the next wire loop length after the wire loop is formed between one set of bonding points has been described.
The loop wire lengths and resonance frequencies of all the wire loops formed in each semiconductor pellet may be obtained before bonding.

【0032】また、上記実施の形態では、比較判定部1
8において共振周波数と超音波振動数が一致すると判定
された時に、リード4上のボンディング点位置を修正す
る場合を説明したが、電極2側のボンディング点位置を
修正するものであっても構わない。またボンディング点
位置を修正することなく、キャピラリ21の駆動を停止
させ、ワイヤボンディングを中止しても良い。
In the above embodiment, the comparison / determination unit 1
Although the case where the bonding point position on the lead 4 is corrected when it is determined that the resonance frequency and the ultrasonic frequency match in 8 has been described, the bonding point position on the electrode 2 side may be corrected. . Alternatively, the wire bonding may be stopped by stopping the driving of the capillary 21 without correcting the bonding point position.

【0033】また、上記実施の形態では、機械振動とし
て、ボンディングアーム19を介してキャピラリ21に
付与する超音波振動の場合を述べたが、機械振動として
は、上記超音波振動の他、XYテーブル12によるボン
ディングヘッド13の移動に伴う振動や、ガイドレール
11によるリードフレーム3の搬送に伴う振動等、ワイ
ヤボンディング装置10の駆動に起因する様々な振動が
ある。従って、超音波振動数記憶部17は、上記様々な
機械振動の振動数を記憶し、比較判定部18は、これら
の各機械振動の振動数とワイヤループ6の共振周波数と
を比較判定するようにしても良い。
Further, in the above embodiment, the case where the ultrasonic vibration is applied to the capillary 21 via the bonding arm 19 has been described as the mechanical vibration. There are various vibrations caused by the drive of the wire bonding apparatus 10, such as vibrations caused by the movement of the bonding head 13 caused by 12 and vibrations caused by the conveyance of the lead frame 3 by the guide rails 11. Therefore, the ultrasonic frequency storage unit 17 stores the frequencies of the various mechanical vibrations described above, and the comparison and determination unit 18 compares and determines the frequencies of the respective mechanical vibrations and the resonance frequency of the wire loop 6. You can

【0034】更に、上記実施の形態では、ワイヤボンデ
ィング装置10が半導体ペレット1の電極2におけるボ
ンディング点とリードフレーム3のリード4におけるボ
ンディング点とをワイヤボンディングするものを述べた
が、異なる電極2のボンディング点どうし、又は異なる
リード4のボンディング点どうしをワイヤボンディング
する場合にも適用できる。
Further, in the above embodiment, the wire bonding apparatus 10 wire bonds the bonding points of the electrode 2 of the semiconductor pellet 1 and the bonding points of the leads 4 of the lead frame 3 to each other. It can also be applied to wire bonding between bonding points or bonding points of different leads 4.

【0035】[0035]

【発明の効果】以上のように、本発明に係るワイヤボン
ディング方法及びワイヤボンディング装置によれば、ワ
イヤループの共振現象に伴うボンディング不良を防止で
きる。
As described above, according to the wire bonding method and the wire bonding apparatus of the present invention, it is possible to prevent defective bonding due to the resonance phenomenon of the wire loop.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、本発明に係るワイヤボンディング装置
の一つの実施の形態を示す構成図である。
FIG. 1 is a configuration diagram showing an embodiment of a wire bonding apparatus according to the present invention.

【図2】図2は、図1の半導体ペレット及びリードの一
部を示す部分平面図である。
FIG. 2 is a partial plan view showing a part of the semiconductor pellet and the lead shown in FIG.

【図3】図3は、図2のIII 拡大図である。FIG. 3 is an enlarged view of III in FIG. 2.

【図4】図4は、図1のワイヤボンディング装置が実施
するワイヤボンディング方法を示すフローチャートであ
る。
4 is a flowchart showing a wire bonding method performed by the wire bonding apparatus of FIG.

【図5】図5は、ワイヤボンディングされた半導体ペレ
ットとリードフレームとを示す平面図である。
FIG. 5 is a plan view showing a wire-bonded semiconductor pellet and a lead frame.

【図6】図6は、図5のVI-VI 線に沿う断面図である。FIG. 6 is a sectional view taken along the line VI-VI of FIG. 5;

【符号の説明】[Explanation of symbols]

1 半導体ペレット 2 電極 3 リードフレーム 4 リード 5 ワイヤ 6 ワイヤループ 10 ワイヤボンディング装置 14 制御装置 16 共振周波数演算部 17 超音波振動数記憶部 18 比較判定部 19 ボンディングアーム 21 キャピラリ A ワイヤループの形成方向 L ずらし量 1 Semiconductor Pellet 2 Electrode 3 Lead Frame 4 Lead 5 Wire 6 Wire Loop 10 Wire Bonding Device 14 Control Device 16 Resonance Frequency Calculation Unit 17 Ultrasonic Frequency Storage Unit 18 Comparison Judgment Unit 19 Bonding Arm 21 Capillary A Wire Loop Forming Direction L Amount of shift

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 ボンディング点間に形成されるワイヤル
ープの共振周波数がワイヤボンディング装置の機械振動
数とは不一致となるようにボンディング点位置を決定し
てボンディングすることを特徴とするワイヤボンディン
グ方法。
1. A wire bonding method, wherein the bonding point position is determined so that the resonance frequency of the wire loop formed between the bonding points does not match the mechanical frequency of the wire bonding apparatus.
【請求項2】 上記機械振動数は、ワイヤボンディング
時にキャピラリに付与される超音波振動の振動数である
請求項1に記載のワイヤボンディング方法。
2. The wire bonding method according to claim 1, wherein the mechanical frequency is a frequency of ultrasonic vibration applied to the capillary during wire bonding.
【請求項3】 ワイヤを挿通保持するキャピラリを駆動
制御し、ボンディング点間を上記ワイヤを用いて接続す
るワイヤボンディング装置において、 上記ボンディング点間に上記ワイヤによって形成される
ワイヤループの共振周波数を算出する共振周波数演算手
段と、 上記ワイヤボンディング装置の機械振動数を記憶する記
憶手段と、 上記共振周波数と上記機械振動数とを比較し、両者の一
致、不一致を判定する比較判定手段と、 上記比較判定手段の判定結果に基づき上記キャピラリを
駆動制御する制御手段と、 を有することを特徴とするワイヤボンディング装置。
3. In a wire bonding apparatus for driving and controlling a capillary for inserting and holding a wire and connecting the bonding points by using the wire, a resonance frequency of a wire loop formed by the wire between the bonding points is calculated. Resonance frequency calculation means, storage means for storing the mechanical frequency of the wire bonding apparatus, comparison determination means for comparing the resonance frequency and the mechanical frequency, and determining whether they match or not, the comparison A wire bonding apparatus comprising: a control unit that drives and controls the capillary based on the determination result of the determination unit.
【請求項4】 制御手段は、比較判定手段にて共振周波
数と機械振動数とが不一致と判定された場合に、ワイヤ
ボンディングを実施すべくキャピラリを駆動制御する請
求項3に記載のワイヤボンディング装置。
4. The wire bonding apparatus according to claim 3, wherein the control means drives and controls the capillary to perform wire bonding when the comparison determination means determines that the resonance frequency and the mechanical frequency do not match. .
【請求項5】 制御手段は、比較判定手段にて共振周波
数と機械振動数とが一致すると判定された場合に、ワイ
ヤループ長を変更してこのワイヤループの共振周波数と
上記機械振動数とを不一致状態にすべくキャピラリを駆
動制御する請求項3又は4に記載のワイヤボンディング
装置。
5. The control means changes the wire loop length and determines the resonance frequency of the wire loop and the mechanical frequency when the comparison determining means determines that the resonance frequency and the mechanical frequency match. The wire bonding apparatus according to claim 3 or 4, wherein the capillaries are drive-controlled to bring them into a non-coincident state.
【請求項6】 制御装置は、比較判定手段にて共振周波
数と機械振動数とが一致すると判定された場合にキャピ
ラリの駆動を停止させる請求項3又は4に記載のワイヤ
ボンディング装置。
6. The wire bonding apparatus according to claim 3, wherein the control device stops the driving of the capillary when the comparison and determination means determines that the resonance frequency and the mechanical frequency match.
【請求項7】 機械振動数は、ワイヤボンディング時に
キャピラリに付与される超音波振動の振動数である請求
項3〜6のいずれか一に記載のワイヤボンディング装
置。
7. The wire bonding apparatus according to claim 3, wherein the mechanical frequency is a frequency of ultrasonic vibration applied to the capillary during wire bonding.
JP7315837A 1995-11-10 1995-11-10 Wire bonding and device Withdrawn JPH09134932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7315837A JPH09134932A (en) 1995-11-10 1995-11-10 Wire bonding and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7315837A JPH09134932A (en) 1995-11-10 1995-11-10 Wire bonding and device

Publications (1)

Publication Number Publication Date
JPH09134932A true JPH09134932A (en) 1997-05-20

Family

ID=18070179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7315837A Withdrawn JPH09134932A (en) 1995-11-10 1995-11-10 Wire bonding and device

Country Status (1)

Country Link
JP (1) JPH09134932A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110626914A (en) * 2019-08-18 2019-12-31 浙江梅轮电梯股份有限公司 Independent safety monitoring device of elevator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110626914A (en) * 2019-08-18 2019-12-31 浙江梅轮电梯股份有限公司 Independent safety monitoring device of elevator

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