[go: up one dir, main page]

JP4365851B2 - Wire bonding method and wire bonding apparatus - Google Patents

Wire bonding method and wire bonding apparatus Download PDF

Info

Publication number
JP4365851B2
JP4365851B2 JP2006320491A JP2006320491A JP4365851B2 JP 4365851 B2 JP4365851 B2 JP 4365851B2 JP 2006320491 A JP2006320491 A JP 2006320491A JP 2006320491 A JP2006320491 A JP 2006320491A JP 4365851 B2 JP4365851 B2 JP 4365851B2
Authority
JP
Japan
Prior art keywords
bonding
capillary
wire
point
bonding point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006320491A
Other languages
Japanese (ja)
Other versions
JP2008135559A (en
Inventor
奨 間島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP2006320491A priority Critical patent/JP4365851B2/en
Priority to PCT/JP2007/073265 priority patent/WO2008066190A1/en
Publication of JP2008135559A publication Critical patent/JP2008135559A/en
Application granted granted Critical
Publication of JP4365851B2 publication Critical patent/JP4365851B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78303—Shape of the pressing surface, e.g. tip or head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

本発明は、ワイヤボンディング方法及びワイヤボンディング装置に係わり、特に、２ｎｄボンディング点に複数回のボンディング動作を行うことにより２ｎｄボンディング点のワイヤとの接合強度を向上させたワイヤボンディング方法及びワイヤボンディング装置に関する。   The present invention relates to a wire bonding method and a wire bonding apparatus, and more particularly, to a wire bonding method and a wire bonding apparatus that improve bonding strength with a wire at a 2nd bonding point by performing a bonding operation at a 2nd bonding point multiple times. .

図８は、従来の半導体装置を示す断面図である。図９は、従来のワイヤボンディング方法を模式的に示す図である。   FIG. 8 is a cross-sectional view showing a conventional semiconductor device. FIG. 9 is a diagram schematically showing a conventional wire bonding method.

図８に示すように、従来の半導体装置はリード１ａを備えたフレーム１を有しており、このフレーム１には半導体チップ２がマウントされている。半導体チップ２の能動面にはパッド２ａが形成されており、このパッド２ａとリード１ａとはワイヤ３によって電気的に接続されている。このワイヤ３は図８に示すように癖３ａを備えた三角形のループ形状を有しており、ワイヤの第１ボンディング点（１ｓｔボンディング点）はパッド２ａ上に位置され、ワイヤの第２ボンディング点（２ｎｄボンディング点）はリード１ａ上に位置されている。   As shown in FIG. 8, the conventional semiconductor device has a frame 1 having leads 1a, and a semiconductor chip 2 is mounted on the frame 1. A pad 2 a is formed on the active surface of the semiconductor chip 2, and the pad 2 a and the lead 1 a are electrically connected by a wire 3. As shown in FIG. 8, the wire 3 has a triangular loop shape with a flange 3a, and the first bonding point (first bonding point) of the wire is located on the pad 2a, and the second bonding point of the wire (2nd bonding point) is located on the lead 1a.

図８に示すワイヤ３の三角形状は、図９に示すワイヤボンディング工程により形成される。すなわち、図９（ａ）に示すように、キャピラリ４から繰り出されたワイヤ３の先端にボールを形成した後に、キャピラリ４を下降して第１ボンディング点Ａに前記ボールをボンディングし、その後、キャピラリ４をＢ点まで上昇させてワイヤ３を繰り出す。次に、図９（ｂ）に示すように、キャピラリ４を第２ボンディング点Ｇと反対方向にＣ点まで移動させる。このようにキャピラリ４を第２ボンディング点Ｇと反対方向に移動させることを一般にリバース動作という。これにより、ワイヤ３はＡ点からＣ点まで傾斜した形状となり、ワイヤ３に癖３ａが付けられる。次に、図９（ｃ）に示すように、キャピラリ４をＦ点まで上昇させ、図８に示す傾斜部分（癖３ａから第２ボンディング点Ｇまでの部分）だけワイヤ３を繰り出す。次に、図９（ｄ）、（ｅ）に示すように、キャピラリ４を下降させて第２ボンディング点Ｇにワイヤ３をボンディングする（例えば特許文献１参照）。   The triangular shape of the wire 3 shown in FIG. 8 is formed by the wire bonding process shown in FIG. That is, as shown in FIG. 9A, after forming a ball on the tip of the wire 3 fed out from the capillary 4, the capillary 4 is lowered to bond the ball to the first bonding point A, and then the capillary 4 is raised to point B and the wire 3 is fed out. Next, as shown in FIG. 9B, the capillary 4 is moved to the point C in the direction opposite to the second bonding point G. This movement of the capillary 4 in the direction opposite to the second bonding point G is generally called a reverse operation. Thereby, the wire 3 becomes a shape inclined from the point A to the point C, and the hook 3a is attached to the wire 3. Next, as shown in FIG. 9C, the capillary 4 is raised to the point F, and the wire 3 is fed out only by the inclined part (the part from the flange 3a to the second bonding point G) shown in FIG. Next, as shown in FIGS. 9D and 9E, the capillary 4 is lowered and the wire 3 is bonded to the second bonding point G (see, for example, Patent Document 1).

特開２０００−２６０８０８号公報（図７）JP 2000-260808 A (FIG. 7)

上述したように従来のワイヤボンディング方法では、リード１ａ上の第２ボンディング点（２ｎｄボンディング点）Ｇに１回のボンディング接合を行っているが、リードの材料や表面状態によっては１回のボンディング接合では十分な接合強度やステッチ部（２ｎｄボンディングによって形成された部分）の良好な形状が得られない場合がある。   As described above, in the conventional wire bonding method, one bonding bonding is performed at the second bonding point (2nd bonding point) G on the lead 1a. However, depending on the material and surface state of the lead, one bonding bonding is performed. However, there may be a case where sufficient bonding strength and a good shape of a stitch portion (portion formed by 2nd bonding) cannot be obtained.

１回のボンディング接合で接合強度を向上させるには、ボンディング時に印加される超音波振動の出力を高くしたり、ボンディング時に加えられる荷重を重くすることが考えられる。しかし、超音波出力を高くしたり、荷重を重くするとボンディング時にワイヤが切断されるワイヤカットの不具合が生じやすくなる。   In order to improve the bonding strength by one bonding, it is conceivable to increase the output of ultrasonic vibration applied during bonding or increase the load applied during bonding. However, if the ultrasonic output is increased or the load is increased, a wire cutting defect that causes the wire to be cut during bonding is likely to occur.

一方、ワイヤカットを抑制するには、超音波出力を低くしたり、ボンディング時の荷重を下げることが考えられる。しかし、超音波出力を低くしたり、ボンディング時の荷重を軽くすると、図１０（Ａ）、（Ｂ）に示すようにステッチ部にめくれ現象１９が発生しやすくなる。めくれ現象１９は、ボンディングの接合状態が悪いときに発生するものである。
このようなことから、超音波振動の出力条件及びボンディング時の荷重の条件を設定するのに手間がかかり長時間を要することがある。 On the other hand, in order to suppress the wire cut, it is conceivable to lower the ultrasonic output or lower the load during bonding. However, if the ultrasonic output is lowered or the load at the time of bonding is reduced, the turning phenomenon 19 tends to occur at the stitch portion as shown in FIGS. 10 (A) and 10 (B). The turn-over phenomenon 19 occurs when the bonding state of bonding is poor.
For this reason, it takes time and time to set the output condition of ultrasonic vibration and the load condition during bonding.

また、２ｎｄボンディング点のリードの幅が細いものでは、リードが動きやすいため、ボンディング時に超音波振動を印加するとリードが動いてしまい、その超音波振動がリードに十分に伝達されず、その結果、接合強度が低下する問題がある。   In addition, when the lead width at the 2nd bonding point is narrow, the lead is easy to move, so when applying ultrasonic vibration at the time of bonding, the lead moves, and the ultrasonic vibration is not sufficiently transmitted to the lead. There is a problem that the bonding strength decreases.

本発明は上記のような事情を考慮してなされたものであり、その目的は、２ｎｄボンディング点に複数回のボンディング動作を行うことにより２ｎｄボンディング点のワイヤとの接合強度を向上させたワイヤボンディング方法及びワイヤボンディング装置を提供することにある。   The present invention has been made in consideration of the above-described circumstances, and its object is to perform wire bonding in which the bonding strength with the wire at the 2nd bonding point is improved by performing a bonding operation at the 2nd bonding point a plurality of times. It is to provide a method and a wire bonding apparatus.

上記課題を解決するため、本発明に係るワイヤボンディング方法は、キャピラリから繰り出されたワイヤの先端にボールを形成し、前記ボールを１ｓｔボンディング点にボンディングし、
前記キャピラリを２ｎｄボンディング点に移動させ、前記キャピラリによって複数回のボンディング動作を行うことにより前記２ｎｄボンディング点に前記ワイヤをボンディングすることを特徴とする。 In order to solve the above problems, a wire bonding method according to the present invention forms a ball at the tip of a wire drawn out from a capillary, bonds the ball to a first bonding point,
The capillary is moved to a 2nd bonding point, and the wire is bonded to the 2nd bonding point by performing a plurality of bonding operations with the capillary.

また、本発明に係るワイヤボンディング方法において、前記複数回のボンディング動作は、前記キャピラリを前記２ｎｄボンディング点に接触させて超音波振動を加えた後に、ワイヤを破断させることなく、前記キャピラリを上昇及び下降させ、前記２ｎｄボンディング点に前記キャピラリを再び接触させて超音波振動を加える動作を有するものであることが好ましい。これにより、従来技術に比べて低い出力の超音波振動を用いても複数回超音波振動を加えるため、ワイヤ切断を起こすことなく接合強度を向上させることができる。   In the wire bonding method according to the present invention, the plurality of bonding operations may include raising and lowering the capillary without breaking the wire after bringing the capillary into contact with the 2nd bonding point and applying ultrasonic vibration. It is preferable to have an operation of applying ultrasonic vibration by lowering and bringing the capillary into contact with the 2nd bonding point again. Accordingly, since ultrasonic vibration is applied a plurality of times even when ultrasonic vibration having a lower output than that of the prior art is used, the bonding strength can be improved without causing wire cutting.

本発明に係るワイヤボンディング方法は、キャピラリから繰り出されたワイヤの先端にボールを形成し、前記ボールを第１ボンディング点にボンディングする第１工程と、
前記キャピラリを第２ボンディング点に移動させ、前記キャピラリから前記第２ボンディング点に超音波振動を加えることにより前記第２ボンディング点に前記ワイヤをボンディングする第２工程と、
前記キャピラリを上昇及び下降させ、前記第２工程によって形成されたステッチ部に重なる位置の第３ボンディング点に前記キャピラリを接触させて超音波振動を加える第３工程と、
を具備することを特徴とする。 A wire bonding method according to the present invention includes a first step of forming a ball at a tip of a wire fed from a capillary and bonding the ball to a first bonding point;
A second step of bonding the wire to the second bonding point by moving the capillary to a second bonding point and applying ultrasonic vibration from the capillary to the second bonding point;
A third step of raising and lowering the capillary, bringing the capillary into contact with a third bonding point at a position overlapping the stitch portion formed in the second step, and applying ultrasonic vibration;
It is characterized by comprising.

本発明に係るワイヤボンディング装置は、１ｓｔボンディング点と２ｎｄボンディング点をワイヤによって接続するワイヤボンディング装置において、
前記ワイヤを繰り出すキャピラリと、
前記キャピラリを移動させる移動機構と、
前記キャピラリに超音波振動を加える振動機構と、
前記キャピラリを前記２ｎｄボンディング点に移動させ、前記キャピラリによって複数回のボンディング動作を行うことにより前記２ｎｄボンディング点に前記ワイヤをボンディングするように制御する制御部と、
を具備することを特徴とする。 The wire bonding apparatus according to the present invention is a wire bonding apparatus that connects a first bonding point and a second bonding point with a wire.
A capillary for feeding out the wire;
A moving mechanism for moving the capillary;
A vibration mechanism for applying ultrasonic vibration to the capillary;
A controller for controlling the bonding of the wire to the 2nd bonding point by moving the capillary to the 2nd bonding point and performing a plurality of bonding operations with the capillary;
It is characterized by comprising.

また、本発明に係るワイヤボンディング装置は、前記制御部において前記２ｎｄボンディング点に前記ワイヤをボンディングするように制御する際に行われる前記複数回のボンディング動作は、前記キャピラリを前記２ｎｄボンディング点に接触させて前記振動機構により超音波振動を加えた後に、前記キャピラリを上昇及び下降させ、前記２ｎｄボンディング点に前記キャピラリを再び接触させて前記振動機構により超音波振動を加える動作を有するものであることが好ましい。   In the wire bonding apparatus according to the present invention, the plurality of bonding operations performed when the control unit performs control so as to bond the wire to the 2nd bonding point, and the capillary contacts the 2nd bonding point. After the ultrasonic vibration is applied by the vibration mechanism, the capillary is raised and lowered, the capillary is brought into contact with the 2nd bonding point again, and the ultrasonic vibration is applied by the vibration mechanism. Is preferred.

本発明に係るワイヤボンディング装置は、第１ボンディング点と第２ボンディング点をワイヤによって接続するワイヤボンディング装置において、
前記ワイヤを繰り出すキャピラリと、
前記キャピラリを移動させる移動機構と、
前記キャピラリに超音波振動を加える振動機構と、
前記キャピラリを第２ボンディング点に移動させ、前記キャピラリから前記第２ボンディング点に前記振動機構によって超音波振動を加えることにより前記第２ボンディング点に前記ワイヤをボンディングした後に、前記キャピラリを上昇及び下降させ、前記第２ボンディング点へのボンディングによって形成されたステッチ部に重なる位置の第３ボンディング点に前記キャピラリを接触させて前記振動機構によって超音波振動を加えるように制御する制御部と、
を具備することを特徴とする。 The wire bonding apparatus according to the present invention is a wire bonding apparatus that connects a first bonding point and a second bonding point with a wire.
A capillary for feeding out the wire;
A moving mechanism for moving the capillary;
A vibration mechanism for applying ultrasonic vibration to the capillary;
After moving the capillary to the second bonding point and applying ultrasonic vibration from the capillary to the second bonding point by the vibration mechanism, the capillary is lifted and lowered after bonding the wire to the second bonding point. A control unit for controlling the capillary to contact the third bonding point at a position overlapping the stitch part formed by bonding to the second bonding point and applying ultrasonic vibration by the vibration mechanism;
It is characterized by comprising.

以上説明したように本発明によれば、２ｎｄボンディング点に複数回のボンディング動作を行うことにより２ｎｄボンディング点のワイヤとの接合強度を向上させたワイヤボンディング方法及びワイヤボンディング装置を提供することができる。   As described above, according to the present invention, it is possible to provide a wire bonding method and a wire bonding apparatus in which the bonding strength with the wire at the 2nd bonding point is improved by performing the bonding operation a plurality of times at the 2nd bonding point. .

以下、図面を参照して本発明の実施の形態について説明する。
（実施の形態１）
図１は、本発明の実施の形態１によるワイヤボンディング装置を示す構成図である。 Embodiments of the present invention will be described below with reference to the drawings.
(Embodiment 1)
FIG. 1 is a configuration diagram illustrating a wire bonding apparatus according to Embodiment 1 of the present invention.

図１に示すワイヤボンディング装置は、ＸＹステージ５、Ｚ軸６、振動子７、超音波ホーン８、キャピラリ４、モータ制御回路９、超音波制御回路１０及びボンディング制御回路１１を有している。   The wire bonding apparatus shown in FIG. 1 has an XY stage 5, a Z axis 6, a vibrator 7, an ultrasonic horn 8, a capillary 4, a motor control circuit 9, an ultrasonic control circuit 10, and a bonding control circuit 11.

超音波ホーン８の先端側にはキャピラリ１が配置されており、超音波ホーン８の基端側には超音波振動を発生させる振動子７が接続されている。キャピラリ４、超音波ホーン８及び振動子７はＺ軸６に取り付けられており、このＺ軸６はＸＹステージ５上に搭載されている。   The capillary 1 is disposed on the distal end side of the ultrasonic horn 8, and a vibrator 7 that generates ultrasonic vibrations is connected to the proximal end side of the ultrasonic horn 8. The capillary 4, the ultrasonic horn 8, and the vibrator 7 are attached to the Z axis 6, and the Z axis 6 is mounted on the XY stage 5.

Ｚ軸６はキャピラリ４、超音波ホーン８及び振動子７を上下移動させるために駆動する機構から構成されている。この機構はモータ（図示せず）を有しており、モータの駆動力によってキャピラリ４及び超音波ホーン８を上下方向（Ｚ軸方向）に移動させることができるようになっている。   The Z axis 6 is composed of a mechanism that drives the capillary 4, the ultrasonic horn 8, and the vibrator 7 to move up and down. This mechanism has a motor (not shown) and can move the capillary 4 and the ultrasonic horn 8 in the vertical direction (Z-axis direction) by the driving force of the motor.

ＸＹステージ５はＺ軸６とともにキャピラリ４及び超音波ホーン８をＸＹ方向に移動可能となっている。ＸＹステージ５はモータ（図示せず）を有しており、モータの駆動力によってキャピラリ４及び超音波ホーン８を移動させることができるようになっている。   The XY stage 5 can move the capillary 4 and the ultrasonic horn 8 together with the Z axis 6 in the XY directions. The XY stage 5 has a motor (not shown), and the capillary 4 and the ultrasonic horn 8 can be moved by the driving force of the motor.

キャピラリ４の内部にはワイヤ３が挿通されており（図３参照）、ワイヤ３がキャピラリ４から繰り出されるようになっている。キャピラリ４の上にはワイヤ３をつかむ機構を持つワイヤクランパ１２が配置されている。このワイヤクランパ１２によってワイヤ３をクランプすることによりキャピラリ４から繰り出されるワイヤ３の長さが調整される。   A wire 3 is inserted into the capillary 4 (see FIG. 3), and the wire 3 is drawn out from the capillary 4. A wire clamper 12 having a mechanism for holding the wire 3 is disposed on the capillary 4. By clamping the wire 3 with the wire clamper 12, the length of the wire 3 fed out from the capillary 4 is adjusted.

超音波制御回路１０は、振動子７に接続されており、超音波ホーン８に向けて振動子７から発生させる超音波振動を制御する回路である。モータ制御回路９は、Ｚ軸６及びＸＹステージ５それぞれに接続されており、Ｚ軸６及びＸＹステージ５それぞれのモータを制御する回路である。   The ultrasonic control circuit 10 is connected to the vibrator 7 and is a circuit that controls the ultrasonic vibration generated from the vibrator 7 toward the ultrasonic horn 8. The motor control circuit 9 is connected to the Z-axis 6 and the XY stage 5 and controls the motors of the Z-axis 6 and the XY stage 5.

ボンディング制御回路部１１は、超音波制御回路１０及びモータ制御回路９それぞれに接続されており、超音波制御回路１０及びモータ制御回路９それぞれを制御することによりワイヤボンディング工程全体を制御する回路である。このワイヤボンディング工程は、後述するワイヤボンディング方法を実現する工程である。   The bonding control circuit unit 11 is connected to the ultrasonic control circuit 10 and the motor control circuit 9 respectively, and controls the entire wire bonding process by controlling the ultrasonic control circuit 10 and the motor control circuit 9 respectively. . This wire bonding step is a step of realizing a wire bonding method described later.

次に、図１のワイヤボンディング装置を用いてワイヤボンディングを行う方法について図２〜図４を参照しつつ説明する。
図２は、本発明の実施の形態１によるワイヤボンディング方法を模式的に示す図である。図３（ａ）は、２ｎｄボンディングを行う様子を示す図であり、図３（ｂ）は、２ｎｄボンディングを行っている様子を示す図である。図４（ａ）〜（ｃ）は、図３（ｂ）に示す２ｎｄボンディングを行う詳細を示すものであって領域１４を拡大した図である。 Next, a method for performing wire bonding using the wire bonding apparatus of FIG. 1 will be described with reference to FIGS.
FIG. 2 is a diagram schematically showing the wire bonding method according to the first embodiment of the present invention. FIG. 3A is a diagram illustrating a state where 2nd bonding is performed, and FIG. 3B is a diagram illustrating a state where 2nd bonding is performed. FIGS. 4A to 4C show details of performing the 2nd bonding shown in FIG. 3B and are enlarged views of the region 14.

まず、図３（ａ）及び図２に示すように、キャピラリ４から繰り出されたワイヤ３の先端にボール１３を形成し、キャピラリ４を下降させて半導体チップ２のパッド２ａ上の第１ボンディング点（１ｓｔボンディング点）Ａにボール１３をボンディングする。この際、キャピラリ４からボール１３に圧力及び超音波振動が加えられる。このようにしてパッド２ａ上にワイヤ３がボンディング接合される。   First, as shown in FIGS. 3A and 2, a ball 13 is formed at the tip of the wire 3 fed out from the capillary 4, and the capillary 4 is lowered to form a first bonding point on the pad 2 a of the semiconductor chip 2. The ball 13 is bonded to (1st bonding point) A. At this time, pressure and ultrasonic vibration are applied from the capillary 4 to the ball 13. In this way, the wire 3 is bonded to the pad 2a.

次いで、図２に示すように、キャピラリ４を上昇させてワイヤ３を繰り出した後に、キャピラリ４を第２ボンディング点Ｃと反対方向に移動させる（リバース動作）。これにより、ワイヤ３には癖３ｂが付けられる（図３（ａ）参照）。次に、キャピラリ４を斜め上方向にＢ点まで上昇させ、図３（ｂ）に示す癖３ｂから第２ボンディング点までのワイヤ３を繰り出す。次に、図２に示すように、キャピラリ４を下降させて第２ボンディング点Ｃにワイヤ３をボンディングする。この際、ワイヤ３には超音波振動及び圧力が加えられる。次に、キャピラリ４を任意に設定した高さのＤ点まで上昇させ、任意に設定した量（数ミクロン）だけルーピング方向（第１ボンディング点Ａと反対方向）にキャピラリ４を移動させながら下降させ、第３ボンディング点Ｅに超音波振動及び圧力を加える。このようにＣ点及びＥ点に２回のボンディング動作を行うことにより、２ｎｄボンディング点の接合強度を向上させる。   Next, as shown in FIG. 2, after raising the capillary 4 and feeding the wire 3, the capillary 4 is moved in the direction opposite to the second bonding point C (reverse operation). Thereby, the collar 3b is attached to the wire 3 (refer Fig.3 (a)). Next, the capillary 4 is raised obliquely upward to the point B, and the wire 3 from the flange 3b to the second bonding point shown in FIG. Next, as shown in FIG. 2, the capillary 4 is lowered to bond the wire 3 to the second bonding point C. At this time, ultrasonic vibration and pressure are applied to the wire 3. Next, the capillary 4 is raised to a point D having an arbitrarily set height, and lowered while moving the capillary 4 in the looping direction (the direction opposite to the first bonding point A) by an arbitrarily set amount (several microns). Then, ultrasonic vibration and pressure are applied to the third bonding point E. Thus, the bonding strength at the 2nd bonding point is improved by performing the bonding operation twice at the C point and the E point.

上述した第２ボンディング点Ｃ及び第３ボンディング点Ｅにワイヤ３をボンディングする方法について図４を参照しつつ詳細に説明する。   A method of bonding the wire 3 to the second bonding point C and the third bonding point E will be described in detail with reference to FIG.

図４（ａ）に示すように、ワイヤ３を第２ボンディング点Ｃにボンディングする際、キャピラリ４によって矢印１８のように第２ボンディング点Ｃに圧力を加えるとともに矢印１５のように超音波振動を加える。この動作を所定時間行う。   As shown in FIG. 4A, when the wire 3 is bonded to the second bonding point C, pressure is applied to the second bonding point C by the capillary 4 as indicated by the arrow 18 and ultrasonic vibration is applied as indicated by the arrow 15. Add. This operation is performed for a predetermined time.

次に、図４（ｂ）に示すように、キャピラリ４を矢印１７のように上昇させる。このとき、第２ボンディング点Ｃの領域１６の接合部は前記超音波振動によって強化されている。次いで、矢印１７のように数ミクロン程度ルーピング方向にキャピラリ４を移動させながら下降させる。   Next, as shown in FIG. 4B, the capillary 4 is raised as shown by an arrow 17. At this time, the joint portion in the region 16 of the second bonding point C is strengthened by the ultrasonic vibration. Next, the capillary 4 is lowered while moving in the looping direction by several microns as indicated by the arrow 17.

次に、図４（ｃ）に示すように、キャピラリ４によって矢印１８のように第３ボンディング点Ｅに圧力を加えるとともに矢印１５のように超音波振動を加える。この動作を所定時間行う。このようにＣ点及びＥ点に２回のボンディング動作を行うことにより、２ｎｄボンディング点の接合強度を向上させる。尚、第２ボンディング点Ｃと第３ボンディング点Ｅとの間隔は狭く、第２ボンディング点へのボンディング動作によって形成されたステッチ部に第３ボンディング点Ｅが重なる程度の狭い間隔が好ましい。   Next, as shown in FIG. 4C, pressure is applied to the third bonding point E by the capillary 4 as indicated by the arrow 18 and ultrasonic vibration is applied as indicated by the arrow 15. This operation is performed for a predetermined time. Thus, the bonding strength at the 2nd bonding point is improved by performing the bonding operation twice at the C point and the E point. In addition, the space | interval of the 2nd bonding point C and the 3rd bonding point E is narrow, and the space | interval narrow so that the 3rd bonding point E overlaps with the stitch part formed by bonding operation to the 2nd bonding point is preferable.

接合強度を上げるには超音波振動を高くするのが一般的である。しかし、超音波振動を高くしすぎるとボンディング中にワイヤが切断されてしまい、ボンディング動作が中断される。また、ワイヤの切断を発生させないように超音波振動を低くすると、めくれが発生したり、十分な接合強度が得られなくなることがある。   In order to increase the bonding strength, the ultrasonic vibration is generally increased. However, if the ultrasonic vibration is too high, the wire is cut during bonding, and the bonding operation is interrupted. Further, if the ultrasonic vibration is lowered so as not to cause the wire to be cut, turning may occur or sufficient bonding strength may not be obtained.

これに対し、図４（ａ）〜（ｃ）に示すようにＣ点及びＥ点に２回のボンディング動作を行う場合は次のように制御する。１回目のボンディング動作で接合強度を十分に確保する必要がないので、従来技術の１回だけのボンディング動作の場合に比べて低い超音波振動を印加することが可能となる。そして、２回目のボンディング動作時に、キャピラリ４を斜めに下降させ、第３ボンディング点Ｅにタッチさせることによりワイヤを切断させやすくするとともに、従来技術の１回だけのボンディング動作の場合に比べて低い超音波振動をキャピラリ４から印加する。このように従来技術の１回だけのボンディング動作の場合に比べて低い超音波振動を２回のボンディング動作によって加えることによりワイヤ切断を抑制することができる。これとともに、Ｃ点及びＥ点に２回のボンディング動作を行うことにより、接合面積を増やすことができ、その結果、接合強度を向上させることが可能となる。このため、接合強度が弱い時に発生するステッチ部のめくれを抑制することができる。従って、ワイヤ切断やめくれが発生しやすいデバイスに対して有効である。   In contrast, as shown in FIGS. 4A to 4C, when the bonding operation is performed twice at the points C and E, the following control is performed. Since it is not necessary to sufficiently secure the bonding strength in the first bonding operation, it is possible to apply a lower ultrasonic vibration than in the case of the single bonding operation of the prior art. In the second bonding operation, the capillary 4 is lowered obliquely and touches the third bonding point E to make it easier to cut the wire, and is lower than the case of the single bonding operation of the prior art. Ultrasonic vibration is applied from the capillary 4. In this way, wire cutting can be suppressed by applying low ultrasonic vibration by two bonding operations as compared with the case of the single bonding operation of the prior art. At the same time, by performing the bonding operation twice at the points C and E, the bonding area can be increased, and as a result, the bonding strength can be improved. For this reason, it is possible to suppress the turning of the stitch portion that occurs when the bonding strength is weak. Therefore, it is effective for a device in which wire cutting or turning is likely to occur.

次に、上記実施の形態１によるワイヤボンディング方法を用いて、平面四角形の半導体チップの４辺に沿ったパッド（第１ボンディング点）とリード（第２ボンディング点）にワイヤボンディングを行い、それぞれのワイヤ（金線）を引っ張って破断する荷重を測定する引張試験を行った。上記実施の形態１によるワイヤボンディング方法と比較するために、従来技術によるワイヤボンディング方法を用いて、パッド（第１ボンディング点）とリード（第２ボンディング点）にワイヤボンディングを行い、それぞれのワイヤ（金線）についても引張試験を行った。これらの試験結果を表１に示す。   Next, by using the wire bonding method according to the first embodiment, wire bonding is performed on pads (first bonding points) and leads (second bonding points) along four sides of a planar rectangular semiconductor chip, A tensile test was performed to measure the load at which the wire (gold wire) was pulled and broken. In order to compare with the wire bonding method according to the first embodiment, wire bonding is performed on the pad (first bonding point) and the lead (second bonding point) using the wire bonding method according to the prior art, and each wire ( A tensile test was also performed on the gold wire. The test results are shown in Table 1.

表１において、従来法は、従来技術によるワイヤボンディング方法であって、２ｎｄボンディングを１回だけのボンディング動作で行ったものである。この場合の２ｎｄボンディングのボンディング動作時の超音波振動は従来からある通常条件とした。   In Table 1, the conventional method is a wire bonding method according to the prior art, in which 2nd bonding is performed by a single bonding operation. In this case, the ultrasonic vibration during the bonding operation of the 2nd bonding was set to a conventional condition.

ＤＳＢ（ダブルステッチボンディング）は、上記実施の形態１によるワイヤボンディング方法であって、２ｎｄボンディングを２回のボンディング動作で行ったものである。この場合の２ｎｄボンディングの１回目のボンディング動作時の超音波振動は前記通常条件より低い設定とし、２回目のボンディング動作時の超音波振動は前記通常条件より高い設定とした。ここで示した超音波振動の値以外のボンディング条件は、従来法、ＤＳＢともに同様のものとした。   DSB (double stitch bonding) is a wire bonding method according to the first embodiment, in which 2nd bonding is performed by two bonding operations. In this case, the ultrasonic vibration during the first bonding operation of 2nd bonding was set lower than the normal condition, and the ultrasonic vibration during the second bonding operation was set higher than the normal condition. Bonding conditions other than the ultrasonic vibration values shown here are the same for both the conventional method and the DSB.

表１において、右辺は、半導体チップの右辺に沿ったパッドを１ｓｔボンディングとしてワイヤである。上辺は、半導体チップの上辺に沿ったパッドを１ｓｔボンディングとしてワイヤである。左辺は、半導体チップの左辺に沿ったパッドを１ｓｔボンディングとしてワイヤである。下辺は、半導体チップの下辺に沿ったパッドを１ｓｔボンディングとしてワイヤである。   In Table 1, the right side is a wire with a pad along the right side of the semiconductor chip as the first bonding. The upper side is a wire with a pad along the upper side of the semiconductor chip as the first bonding. The left side is a wire with a pad along the left side of the semiconductor chip as the first bonding. The lower side is a wire with a pad along the lower side of the semiconductor chip as the first bonding.

表１に示すように、上記実施の形態１によるワイヤボンディング方法（ＤＳＢ）は、従来法に比べて高い接合強度を有することが確認された。   As shown in Table 1, it was confirmed that the wire bonding method (DSB) according to the first embodiment has higher bonding strength than the conventional method.

図５（Ａ）は、表１に示すＤＳＢの下辺の２ｎｄボンディング形状を示す写真であり、図５（Ｂ）は、表１に示すＤＳＢの右辺の２ｎｄボンディング形状を示す写真である。図５（Ａ），（Ｂ）に示すように、実施の形態１によるワイヤボンディング方法では、めくれ現象の発生は見られなかった。   FIG. 5A is a photograph showing the 2nd bonding shape of the lower side of the DSB shown in Table 1, and FIG. 5B is a photograph showing the 2nd bonding shape of the right side of the DSB shown in Table 1. As shown in FIGS. 5A and 5B, no turn-up phenomenon was observed in the wire bonding method according to the first embodiment.

図１０（Ａ）は、表１に示す従来法の２ｎｄボンディング形状を示す写真であり、図１０（Ｂ）は、表１に示す従来法の２ｎｄボンディング形状を示す写真である。図１０（Ａ），（Ｂ）に示すように、従来法によるワイヤボンディング方法では、めくれ現象１９の発生が見られ、ステッチ部の外観からも接合状態が悪いことが確認された。   FIG. 10A is a photograph showing the 2nd bonding shape of the conventional method shown in Table 1, and FIG. 10B is a photograph showing the 2nd bonding shape of the conventional method shown in Table 1. As shown in FIGS. 10A and 10B, in the wire bonding method according to the conventional method, the turn-up phenomenon 19 was observed, and it was confirmed from the appearance of the stitch portion that the bonding state was poor.

（実施の形態２）
図６は、本発明の実施の形態２によるワイヤボンディング方法を模式的に示す図であり、図２と同一部分については同一符号を付す。 (Embodiment 2)
FIG. 6 is a diagram schematically showing a wire bonding method according to the second embodiment of the present invention. The same parts as those in FIG.

本実施の形態によるワイヤボンディング方法は、２ｎｄボンディングを３回のボンディング動作によって行うものである。
詳細には、実施の形態１と同様のワイヤボンディング装置を用い、第１ボンディング点Ａに１ｓｔボンディングを行う工程、第２ボンディング点Ｃ及び第３ボンディング点Ｅにボンディングを行う工程までは図２に示すものと同様である。本実施の形態では、図６に示すように、第３ボンディング点Ｅにボンディング動作を行った後に、キャピラリ４を任意に設定した高さのＦ点まで上昇させ、任意に設定した量（数ミクロン）だけルーピング方向（第１ボンディング点Ａと反対方向）にキャピラリ４を移動させながら下降させ、第４ボンディング点Ｇに圧力を加えるとともに従来技術の１回だけのボンディング動作の場合に比べて低い超音波振動を加え、この動作を所定時間行う。このようにＣ点、Ｅ点及びＧ点に３回のボンディング動作を行うことにより、２ｎｄボンディング点の接合強度を向上させる。 In the wire bonding method according to the present embodiment, 2nd bonding is performed by three bonding operations.
In detail, using the same wire bonding apparatus as in the first embodiment, the process up to the first bonding at the first bonding point A, the process of bonding at the second bonding point C and the third bonding point E are shown in FIG. It is the same as that shown. In the present embodiment, as shown in FIG. 6, after performing the bonding operation at the third bonding point E, the capillary 4 is raised to an F point having an arbitrarily set height, and an arbitrarily set amount (several microns) is obtained. ) And lowering the capillary 4 while moving it in the looping direction (the direction opposite to the first bonding point A), applying pressure to the fourth bonding point G and lower than that of the conventional single bonding operation. This operation is performed for a predetermined time by applying sonic vibration. Thus, the bonding strength at the 2nd bonding point is improved by performing the bonding operation three times at the C point, the E point, and the G point.

尚、第３ボンディング点Ｅと第４ボンディング点Ｇとの間隔は狭く、２ｎｄボンディングのステッチ部に第３ボンディング点と第４ボンディング点が重なる程度の狭い間隔が好ましい。   Note that the distance between the third bonding point E and the fourth bonding point G is narrow, and a narrow distance is preferable so that the third bonding point and the fourth bonding point overlap the stitch portion of the 2nd bonding.

上記実施の形態２においても実施の形態１と同様の効果を得ることができる。
また、上記実施の形態２では、２ｎｄボンディングを３回のボンディング動作で行っているため、各々のボンディング動作時の超音波振動の出力を実施の形態１の場合より低くすることも可能であり、この場合はワイヤ切断の発生をより抑制することができる。 In the second embodiment, the same effect as in the first embodiment can be obtained.
In the second embodiment, since the 2nd bonding is performed by three bonding operations, the output of ultrasonic vibration during each bonding operation can be made lower than that in the first embodiment. In this case, the occurrence of wire cutting can be further suppressed.

（実施の形態３）
図７は、本発明の実施の形態３によるワイヤボンディング方法を模式的に示す図であり、図６と同一部分については同一符号を付し、異なる部分についてのみ説明する。 (Embodiment 3)
FIG. 7 is a diagram schematically showing a wire bonding method according to Embodiment 3 of the present invention. The same parts as those in FIG. 6 are denoted by the same reference numerals, and only different parts will be described.

本実施の形態は、上記実施の形態２とは第３ボンディング点及び第４ボンディング点の位置が異なっている。すなわち、第３ボンディング点Ｃにボンディングを行った後、キャピラリを任意に設定した高さのＤ点まで上昇させ、任意に設定した量（数ミクロン）だけ任意に設定した方向（ルーピング方向以外の方向は３６０度の範囲の全てを含むが、図７ではルーピング方向を例示している）にキャピラリを移動させながら下降させ、第３ボンディング点Ｅに超音波振動及び圧力を加える。次に、キャピラリを任意に設定した高さのＦ点まで上昇させ、任意に設定した量（数ミクロン）だけ任意に設定した方向（ルーピング方向以外の方向は３６０度の範囲の全てを含むが、図７ではルーピング方向と反対方向を例示している）にキャピラリを移動させながら下降させ、第４ボンディング点Ｇに超音波振動及び圧力を加える。このようにＣ点、Ｅ点及びＧ点に３回のボンディング動作を行うことにより、２ｎｄボンディング点の接合強度を向上させる。   This embodiment differs from the second embodiment in the positions of the third bonding point and the fourth bonding point. That is, after bonding at the third bonding point C, the capillary is raised to a point D having an arbitrarily set height, and an arbitrarily set amount (several microns) is set in an arbitrarily set direction (a direction other than the looping direction). Includes the entire range of 360 degrees, but the looping direction is illustrated in FIG. 7), and the capillary is moved down to apply ultrasonic vibration and pressure to the third bonding point E. Next, the capillary is raised to an F point of an arbitrarily set height, and an arbitrarily set amount (several microns) is set in an arbitrarily set direction (directions other than the looping direction include all of the 360 degree range, In FIG. 7, the direction opposite to the looping direction is illustrated), and the capillary is lowered while moving, and ultrasonic vibration and pressure are applied to the fourth bonding point G. Thus, the bonding strength at the 2nd bonding point is improved by performing the bonding operation three times at the C point, the E point, and the G point.

上記実施の形態３においても実施の形態２と同様の効果を得ることができる。   Also in the third embodiment, the same effect as in the second embodiment can be obtained.

尚、本発明は上記実施の形態に限定されず、本発明の主旨を逸脱しない範囲内で種々変更して実施することが可能である。例えば、上記実施の形態２，３では、２ｎｄボンディングを３回のボンディング動作で行っているが、２ｎｄボンディングを４回以上のボンディング動作で行うことも可能である。   Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the second and third embodiments, 2nd bonding is performed by three bonding operations, but 2nd bonding can also be performed by four or more bonding operations.

また、上記実施の形態１〜３では、２ｎｄボンディングにおいて複数回のボンディング動作を行う際、従来技術の１回だけのボンディング動作の場合に比べて低い超音波振動を印加しているが、従来技術の１回だけのボンディング動作の場合に比べて低いボンディング荷重を加え、超音波振動の出力は従来技術と同様とすることも可能であり、また、超音波振動及びボンディング荷重の両方を従来技術の１回だけのボンディング動作の場合に比べて低くすることも可能であり、また２ｎｄボンディングにおいて１回目のボンディング動作で通常よりもワイヤを切断されにくい状態にすることができるため、２回目以降のボンディング動作を行う際に超音波振動及びボンディング荷重の両方を従来技術の１回だけのボンディング動作に比べて高くすることも可能である。これらの場合においても上記実施の形態１〜３と同様の効果を得ることができる。   In the first to third embodiments, when performing a plurality of bonding operations in 2nd bonding, a lower ultrasonic vibration is applied than in the case of a single bonding operation of the prior art. It is possible to apply a lower bonding load than in the case of a single bonding operation, and the output of ultrasonic vibration can be the same as that of the prior art. Compared to the case of the bonding operation only once, it is possible to make it lower, and in the 2nd bonding, it is possible to make the wire harder to be cut than usual in the first bonding operation, and the bonding after the second time is performed. Both ultrasonic vibration and bonding load are higher when performing the operation compared to the single bonding operation of the prior art. It is also possible to. In these cases, the same effects as those of the first to third embodiments can be obtained.

本発明の実施の形態１によるワイヤボンディング装置を示す構成図である。It is a block diagram which shows the wire bonding apparatus by Embodiment 1 of this invention. 本発明の実施の形態１によるワイヤボンディング方法を模式的に示す図である。It is a figure which shows typically the wire bonding method by Embodiment 1 of this invention. （ａ）は、２ｎｄボンディングを行う様子を示す図であり、（ｂ）は、２ｎｄボンディングを行っている様子を示す図である。(A) is a figure which shows a mode that 2nd bonding is performed, (b) is a figure which shows a mode that 2nd bonding is performed. （ａ）〜（ｃ）は、図３（ｂ）に示す２ｎｄボンディングを行う詳細を示すものであって領域１４を拡大した図である。(A)-(c) is the figure which shows the detail which performs 2nd bonding shown in FIG.3 (b), and is the figure which expanded the area | region 14. FIG. （Ａ），（Ｂ）は、実施の形態１の２ｎｄボンディング形状を示す写真である。(A), (B) is the photograph which shows 2nd bonding shape of Embodiment 1. FIG. 本発明の実施の形態２によるワイヤボンディング方法を模式的に示す図である。It is a figure which shows typically the wire bonding method by Embodiment 2 of this invention. 本発明の実施の形態３によるワイヤボンディング方法を模式的に示す図である。It is a figure which shows typically the wire bonding method by Embodiment 3 of this invention. 従来の半導体装置を示す断面図である。It is sectional drawing which shows the conventional semiconductor device. 従来のワイヤボンディング方法を模式的に示す図である。It is a figure which shows the conventional wire bonding method typically. （Ａ），（Ｂ）は、従来法の２ｎｄボンディング形状を示す写真である。(A) and (B) are photographs showing the 2nd bonding shape of the conventional method.

符号の説明Explanation of symbols

１…フレーム
１ａ…リード
２…半導体チップ
２ａ…パッド
３…ワイヤ
３ａ…癖
３ｂ…癖
４…キャピラリ
５…ＸＹステージ
６…Ｚ軸
７…振動子
８…超音波ホーン
９…モータ制御回路
１０…超音波制御回路
１１…ボンディング制御回路
１２…ワイヤクランパ
１３…ボール
１４，１６…領域
１５，１７，１８…矢印
１９…めくれ現象 DESCRIPTION OF SYMBOLS 1 ... Frame 1a ... Lead 2 ... Semiconductor chip 2a ... Pad 3 ... Wire 3a ... 癖 3b ... ４ 4 ... Capillary 5 ... XY stage 6 ... Z axis 7 ... Vibrator 8 ... Ultrasonic horn 9 ... Motor control circuit 10 ... Super Sonic wave control circuit 11 ... bonding control circuit 12 ... wire clamper 13 ... balls 14, 16 ... areas 15, 17, 18 ... arrow 19 ... turning phenomenon

Claims (4)

キャピラリから繰り出されたワイヤの先端にボールを形成し、前記ボールを第１ボンディング点にボンディングする第１工程と、
前記キャピラリを第２ボンディング点に移動させ、前記キャピラリから前記第２ボンディング点に超音波振動を加えることにより前記第２ボンディング点に前記ワイヤをボンディングする第２工程と、
前記キャピラリを上昇及び下降させ、前記第２工程によって形成されたステッチ部における前記第１ボンディング点と反対側の端部に重なる位置で且つ前記ステッチ部における前記第１ボンディング点の側の端部に重ならない位置の第３ボンディング点に前記キャピラリを接触させて超音波振動を加える第３工程と、
を具備することを特徴とするワイヤボンディング方法。 Forming a ball at a tip of a wire drawn out from a capillary, and bonding the ball to a first bonding point;
A second step of bonding the wire to the second bonding point by moving the capillary to a second bonding point and applying ultrasonic vibration from the capillary to the second bonding point;
Said capillary is raised and lowered, the side of the first bonding point in the second step the and front kiss stitch portion at a position overlapping the end opposite to the first bonding point in stitch portion formed by A third step of applying ultrasonic vibration by bringing the capillary into contact with a third bonding point at a position not overlapping the end;
A wire bonding method comprising: 請求項１において、前記第３工程の後に、前記キャピラリを上昇させ、前記第１のボンディング点と反対方向に前記キャピラリを移動させながら下降させ、第４ボンディング点に前記キャピラリを接触させて超音波振動を加える第４工程をさらに具備し、前記ステッチ部に前記第３ボンディング点と前記第４ボンディング点が重なることを特徴とするワイヤボンディング方法。 2. The ultrasonic wave according to claim 1, wherein after the third step, the capillary is raised and lowered while moving the capillary in a direction opposite to the first bonding point, and the capillary is brought into contact with the fourth bonding point. A wire bonding method, further comprising a fourth step of applying vibration , wherein the third bonding point and the fourth bonding point overlap the stitch portion . 第１ボンディング点と第２ボンディング点をワイヤによって接続するワイヤボンディング装置において、
前記ワイヤを繰り出すキャピラリと、
前記キャピラリを移動させる移動機構と、
前記キャピラリに超音波振動を加える振動機構と、
前記キャピラリを第２ボンディング点に移動させ、前記キャピラリから前記第２ボンディング点に前記振動機構によって超音波振動を加えることにより前記第２ボンディング点に前記ワイヤをボンディングした後に、前記キャピラリを上昇及び下降させ、前記第２ボンディング点へのボンディングによって形成されたステッチ部における前記第１ボンディング点と反対側の端部に重なる位置で且つ前記ステッチ部における前記第１ボンディング点の側の端部に重ならない位置の第３ボンディング点に前記キャピラリを接触させて前記振動機構によって超音波振動を加えるように制御する制御部と、
を具備することを特徴とするワイヤボンディング装置。 In the wire bonding apparatus for connecting the first bonding point and the second bonding point by a wire,
A capillary for feeding out the wire;
A moving mechanism for moving the capillary;
A vibration mechanism for applying ultrasonic vibration to the capillary;
After moving the capillary to the second bonding point and applying ultrasonic vibration from the capillary to the second bonding point by the vibration mechanism, the capillary is lifted and lowered after bonding the wire to the second bonding point. is allowed, the end of the second side of the first bonding point at the position and front kiss stitch portion overlapping the end opposite to the first bonding point in stitch portion formed by bonding to the bonding point A control unit that controls the ultrasonic wave to be applied by the vibration mechanism by bringing the capillary into contact with a third bonding point at a position that does not overlap,
A wire bonding apparatus comprising: 請求項３において、前記制御部によって前記第３ボンディング点に超音波振動を加えるように制御した後に、前記キャピラリを上昇させ、前記第１のボンディング点と反対方向に前記キャピラリを移動させながら下降させ、第４ボンディング点に前記キャピラリを接触させて前記振動機構によって超音波振動を加えるように前記制御部によって制御し、前記ステッチ部に前記第３ボンディング点と前記第４ボンディング点が重なることを特徴とするワイヤボンディング装置。 4. The control unit according to claim 3, wherein the controller is controlled to apply ultrasonic vibration to the third bonding point, and then the capillary is raised and lowered while moving the capillary in a direction opposite to the first bonding point. The controller is controlled to bring the capillary into contact with the fourth bonding point and apply ultrasonic vibration by the vibration mechanism, and the third bonding point and the fourth bonding point overlap the stitch portion. Wire bonding equipment.
JP2006320491A 2006-11-28 2006-11-28 Wire bonding method and wire bonding apparatus Active JP4365851B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006320491A JP4365851B2 (en) 2006-11-28 2006-11-28 Wire bonding method and wire bonding apparatus
PCT/JP2007/073265 WO2008066190A1 (en) 2006-11-28 2007-11-26 Wire bonding method and wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006320491A JP4365851B2 (en) 2006-11-28 2006-11-28 Wire bonding method and wire bonding apparatus

Publications (2)

Publication Number Publication Date
JP2008135559A JP2008135559A (en) 2008-06-12
JP4365851B2 true JP4365851B2 (en) 2009-11-18

Family

ID=39467975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006320491A Active JP4365851B2 (en) 2006-11-28 2006-11-28 Wire bonding method and wire bonding apparatus

Country Status (2)

Country Link
JP (1) JP4365851B2 (en)
WO (1) WO2008066190A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129220B2 (en) 2009-08-24 2012-03-06 Hong Kong Polytechnic University Method and system for bonding electrical devices using an electrically conductive adhesive
JP4787374B2 (en) 2010-01-27 2011-10-05 株式会社新川 Semiconductor device manufacturing method and wire bonding apparatus
JP2013143447A (en) * 2012-01-10 2013-07-22 Toshiba Corp Semiconductor device manufacturing method and bonding device
JP2022100277A (en) * 2020-12-23 2022-07-05 スカイワークス ソリューションズ，インコーポレイテッド Apparatus and method for stitch bonding without tool mark

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513491A (en) * 1990-12-19 1993-01-22 Tanaka Denshi Kogyo Kk Wire bonding method for coated wire and semiconductor device
JP2002319596A (en) * 2001-04-20 2002-10-31 Denso Corp Connecting method and connecting structure employing wire bonding

Also Published As

Publication number Publication date
JP2008135559A (en) 2008-06-12
WO2008066190A1 (en) 2008-06-05

Similar Documents

Publication Publication Date Title
JP4467631B1 (en) Wire bonding method
JP4679427B2 (en) Tail wire cutting method and program for bonding apparatus
JP2004172477A (en) Wire loop form, semiconductor device having the same, wire bonding method, and semiconductor manufacturing apparatus
JP4787374B2 (en) Semiconductor device manufacturing method and wire bonding apparatus
WO2014171160A1 (en) Semiconductor device and manufacturing method for semiconductor device
JP4365851B2 (en) Wire bonding method and wire bonding apparatus
US9887174B2 (en) Semiconductor device manufacturing method, semiconductor device, and wire bonding apparatus
JP6209800B2 (en) Semiconductor device manufacturing method and wire bonding apparatus
TWI248186B (en) Method for producing a wedge-wedge wire connection
JP2012523118A (en) Conductive bumps, wire loops, and methods of forming them
JP2530224B2 (en) Wire bonding method
JP2011097042A (en) Bonding capillary
JP4658224B2 (en) Wire bonding equipment
JP3313568B2 (en) Wire bonding apparatus and control method therefor
CN106233444B (en) The manufacturing method and throwing device of semiconductor device
TWI816255B (en) Wire bonding structure, bonding structure forming method, and electronic device
JP6973831B2 (en) Wire bonding equipment
JP3559936B2 (en) Bump bonding equipment
JP2005116603A (en) Method for manufacturing semiconductor device
JPH07147296A (en) Wire bonding and device therefor
TW202329273A (en) Pin wire formation method and wire bonding apparatus
JPH1056034A (en) Bonding device
KR20210033909A (en) Wire bonding device and wire bonding method
KR20020076812A (en) Bonderhead for Wire Bonder
JPH039525A (en) Bump forming method and its forming apparatus

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090224

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090526

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090722

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090818

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090821

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120828

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4365851

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120828

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130828

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140828

Year of fee payment: 5