JPH0788265B2 - Composite material - Google Patents
Composite materialInfo
- Publication number
- JPH0788265B2 JPH0788265B2 JP4147669A JP14766992A JPH0788265B2 JP H0788265 B2 JPH0788265 B2 JP H0788265B2 JP 4147669 A JP4147669 A JP 4147669A JP 14766992 A JP14766992 A JP 14766992A JP H0788265 B2 JPH0788265 B2 JP H0788265B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- substrate
- composite material
- sintered body
- carbide coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/80—Optical properties, e.g. transparency or reflexibility
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は複合材に関し、より詳
しくは炭化ケイ素焼結体からなる基体の表面に、炭化ケ
イ素を化学蒸着している複合材に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite material, and more particularly to a composite material in which silicon carbide is chemically vapor-deposited on the surface of a substrate made of a silicon carbide sintered body.
【０００２】[0002]
【従来の技術】従来、高出力レーザ反射鏡、Ｘ線レーザ
反射鏡、ＳＯＲ光用レーザ反射鏡等の高密度エネルギー
光反射鏡の構成材として、炭化ケイ素焼結体からなる基
体の表面に、化学蒸着法（ＣＶＤ法）によって炭化ケイ
素被膜を形成した複合材が用いられている（たとえば特
開平３−１２６６７１号公報参照）。2. Description of the Related Art Conventionally, as a constituent material of a high-density energy light reflecting mirror such as a high-power laser reflecting mirror, an X-ray laser reflecting mirror, and a SOR light laser reflecting mirror, a surface of a substrate made of a silicon carbide sintered body is A composite material in which a silicon carbide coating film is formed by a chemical vapor deposition method (CVD method) is used (see, for example, JP-A-3-126671).
【０００３】上記複合材からなる反射鏡は、炭化ケイ素
被膜の表面を、自乗平均平方根粗さ（ＲＭＳ）が１０オ
ングストローム以下となるように鏡面仕上げしたもので
あり、上記炭化ケイ素被膜が、耐熱性、熱伝導性等の物
理的性質に優れると共に、短波長域で高反射率を示し、
光学的性質に優れることから、鏡面の剥離、歪み、熱損
を生じ難いという利点がある。A reflecting mirror made of the above-mentioned composite material is obtained by mirror-finishing the surface of the silicon carbide coating so that the root mean square roughness (RMS) is 10 angstroms or less. The silicon carbide coating is heat resistant. In addition to excellent physical properties such as thermal conductivity, it exhibits high reflectance in the short wavelength region,
Since it has excellent optical properties, it has an advantage that it is less likely to cause peeling, distortion and heat loss of the mirror surface.
【０００４】また、上記複合材としては、上記高密度エ
ネルギー光用反射鏡の他、軟Ｘ線用回析格子や、レンズ
用の精密金型の構成材としても用いられている。Further, as the composite material, in addition to the reflection mirror for high-density energy light, a diffraction grating for soft X-rays and a constituent material of a precision mold for a lens are used.
【０００５】[0005]
【発明が解決しようとする課題】上記複合材の基体を構
成する炭化ケイ素は、共有結合体の強い難焼結性物質で
あることから、これを焼結して緻密化するには、通常、
ホウ素、炭素、アルミニウム等の元素や、これらの化合
物の一種或いは二種以上を焼結助剤として、２〜５重量
％添加する必要がある。一方、基体の表面の炭化ケイ素
被膜は、一般に２００〜５００μｍの膜厚を必要とする
ため、化学蒸着を、高温下（１３００〜１７００℃）で
長時間（数時間から数日）行う必要がある。このため、
上記化学蒸着工程において、基体を構成する焼結体に含
まれる焼結助剤等が、不純物として炭化ケイ素被膜中に
拡散移行し、当該被膜の純度が低下して、光損傷耐力や
耐食性等の性能が低下するという問題があった。Since the silicon carbide constituting the substrate of the above composite material is a covalently bonded substance which is difficult to sinter, it is usually required to sinter and densify it.
It is necessary to add 2 to 5% by weight of an element such as boron, carbon or aluminum, or one or more of these compounds as a sintering aid. On the other hand, since the silicon carbide coating on the surface of the substrate generally requires a film thickness of 200 to 500 μm, it is necessary to carry out chemical vapor deposition at high temperature (1300 to 1700 ° C.) for a long time (several hours to several days). . For this reason,
In the chemical vapor deposition step, a sintering aid or the like contained in the sintered body forming the substrate diffuses and migrates into the silicon carbide coating film as an impurity to reduce the purity of the coating film, resulting in optical damage resistance and corrosion resistance. There was a problem that performance deteriorated.
【０００６】このような問題は、特に炭化ケイ素焼結体
の密度が低い場合に顕著となる。これは、焼結体の空孔
部分（結晶粒界部分）に、上記焼結助剤等の不純物が高
濃度で堆積するためであると考えられる。この発明は、
上記問題点に鑑みてなされたものであり、高純度の炭化
ケイ素被膜を得ることができ、光損傷耐力や耐食性等の
諸性能に優れる複合材を提供することを目的とする。[0006] Such a problem becomes remarkable especially when the density of the silicon carbide sintered body is low. It is considered that this is because impurities such as the above-mentioned sintering aid are deposited at a high concentration in the pores (crystal grain boundary portions) of the sintered body. This invention
The present invention has been made in view of the above problems, and an object thereof is to provide a composite material which can obtain a high-purity silicon carbide coating film and is excellent in various properties such as optical damage resistance and corrosion resistance.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
のこの発明の複合材としては、炭化ケイ素焼結体からな
る基体の表面に、炭化ケイ素を化学蒸着している複合材
において、上記基体が、炭化ケイ素を９９．９重量％以
上含み、密度が３．１２ｇ／ｃｍ3 以上の焼結体である
ことを特徴とするものである。As a composite material of the present invention for achieving the above object, a composite material in which silicon carbide is chemically vapor-deposited on the surface of a base material made of a silicon carbide sintered body is used. Is a sintered body containing 99.9% by weight or more of silicon carbide and having a density of 3.12 g / cm 3 or more.
【０００８】ただし、上記複合材において、基体中のホ
ウ素、アルミニウム、及び鉄の含有量は、それぞれ２０
０ｐｐｍ以下である。 [0008] However, in the composite material, boron in the substrate, aluminum, and the iron content, respectively 20
0ppm Ru Der below.
【０００９】[0009]
【作用】上記の構成の複合材によれば、炭化ケイ素焼結
体からなる基体が、炭化ケイ素を９９．９重量％以上含
有する高純度のものであるため、この基体の表面に炭化
ケイ素を化学蒸着する際に、基体中に含まれる焼結助剤
等の不純物が炭化ケイ素被膜中に拡散移行するのを抑制
することができる。特に、上記基体中のホウ素、アルミ
ニウム、及び鉄の含有量が、それぞれ２００ｐｐｍ以下
であるので、特に有害な上記ホウ素等の不純物が、炭化
ケイ素被膜中に拡散移行するのを抑制することができ
る。しかも、基体の密度が３．１２ｇ／ｃｍ３以上と高
密度であり、空孔部分が少ないために、その分高濃度の
不純物が炭化ケイ素被膜中に拡散移行するのを抑制する
ことができる。したがって、炭化ケイ素被膜の純度が低
下するのを抑制することができる。According to the composite material having the above structure, since the base body made of the silicon carbide sintered body is of high purity containing 99.9% by weight or more of silicon carbide, the surface of the base body is provided with silicon carbide. During chemical vapor deposition, impurities such as a sintering aid contained in the substrate can be suppressed from diffusing and transferring into the silicon carbide coating film. In particular, boron and aluminum in the above substrate
Nitrogen and iron content is less than 200ppm each
Therefore, the particularly harmful impurities such as boron described above are carbonized.
It is possible to suppress the diffusion transfer into the silicon coating.
It Moreover, since the density of the substrate is as high as 3.12 g / cm 3 or more and the number of pores is small, it is possible to suppress the diffusion and transfer of the high concentration impurities into the silicon carbide coating film. Therefore, it is possible to suppress a decrease in the purity of the silicon carbide coating.
【００１０】即ち、この発明は、炭化ケイ素焼結体から
なる基体が、炭化ケイ素を９９．９重量％以上含有し、
密度が３．１２ｇ／ｃｍ３以上で、かつ上記基体中のホ
ウ素、アルミニウム、及び鉄の含有量が、それぞれ２０
０ｐｐｍ以下である場合に、基体中の不純物による炭化
ケイ素被膜への悪影響が極めて少ないという知見を得、
かかる知見に基づいてなされたものである。 That is, according to the present invention, a substrate made of a silicon carbide sintered body contains 99.9% by weight or more of silicon carbide ,
In density is 3.12 g / cm 3 or more, and e in said substrate
The content of boron, aluminum and iron is 20 each
When the content was 0 ppm or less, it was found that impurities in the substrate had very little adverse effect on the silicon carbide coating,
Ru der has been made on the basis of this finding.
【００１１】[0011]
【実施例】以下、実施例を示す添付図面により詳細に説
明する。図１は、この発明の複合材を示す断面図であ
る。この複合材は、炭化ケイ素焼結体からなる基体１の
表面に、化学蒸着法により、炭化ケイ素被膜２を形成し
たものである。Embodiments will be described in detail below with reference to the accompanying drawings showing embodiments. FIG. 1 is a sectional view showing a composite material of the present invention. This composite material has a silicon carbide coating 2 formed on the surface of a substrate 1 made of a silicon carbide sintered body by a chemical vapor deposition method.
【００１２】上記基体１は、炭化ケイ素を９９．９重量
％以上含むと共に、密度が３．１２ｇ／ｃｍ３以上の、
α型またはβ型結晶相の焼結体からなる。このような炭
化ケイ素焼結体は、従来の焼結助剤に代えて、０．０３
〜０．０６μｍ程度の炭化ケイ素の超微粉末を用い、そ
の表面滑性を利用して、高温高圧下で焼結を行うことに
より得ることができる（たとえば特開平２−１９９０６
５号公報参照）。The substrate 1 contains silicon carbide in an amount of 99.9% by weight or more and has a density of 3.12 g / cm 3 or more.
It is composed of an α-type or β-type crystal phase sintered body. Such a silicon carbide sintered body is replaced with the conventional sintering aid by 0.03.
Using an ultra fine powder of silicon carbide of about ～0.06Myuemu, by utilizing the surface lubricity can be obtained by performing the sintering at high temperature and high pressure (for example, Japanese Open Rights 2-19906
(See Japanese Patent Publication No. 5).
【００１３】また、上記炭化ケイ素被膜２は、上記高純
度焼結体からなる基体１の表面に、減圧熱ＣＶＤ法によ
って、２００〜５００μｍの厚みに蒸着されている。こ
のように、上記複合材においては、基体１を炭化ケイ素
を９９．９重量％以上含む高純度の焼結体で構成してい
るので、その表面に炭化ケイ素被膜２を化学蒸着する際
に、基体１から炭化ケイ素被膜２中に不純物が拡散移行
するのを抑制することができる。The silicon carbide coating 2 is vapor-deposited on the surface of the base 1 made of the high-purity sintered body to a thickness of 200 to 500 μm by the reduced pressure thermal CVD method. Thus, in the above composite material, since the base 1 is made of a high-purity sintered body containing 99.9% by weight or more of silicon carbide, when the silicon carbide coating 2 is chemically vapor-deposited on its surface, Impurities can be suppressed from diffusing and transferring from the substrate 1 into the silicon carbide coating film 2.
【００１４】また、基体１の密度が３．１２ｇ／ｃｍ3
以上と高密度であるので、空孔部分が少く、その分、高
濃度の不純物が炭化ケイ素被膜２中に拡散移行するのを
抑制することができる。したがって、上記炭化ケイ素被
膜２として高純度のものが得られ、これをＲＭＳ１０オ
ングストローム以下に鏡面仕上げした反射鏡は、数倍か
ら数十倍（最大瞬間負荷、及び総エネルギー負荷）の光
損傷耐力を持つものとなる。これは、鏡面表面の結晶構
造が、不純物の介在がないことからより完全なものとな
り、結晶格子の歪みがなくなる結果、転移が極度に減少
し、（２２０）面に配向した安定した結晶構造となると
共に、鏡面仕上げに際し、結晶方位面の違いによる研磨
速度（被削性）の差に起因する微視的な段差の発生を抑
制することができるからであると推察される。したがっ
て、化学的にも不活性な表面となり、ガラスレンズ成形
型のようなケイ酸塩等による腐蝕に対する抵抗力も格段
に向上するものとなる。The density of the substrate 1 is 3.12 g / cm 3.
Since the density is high as described above, the number of voids is small, and accordingly, high-concentration impurities can be suppressed from diffusing and transferring into the silicon carbide coating film 2. Therefore, a high-purity silicon carbide coating 2 can be obtained, and a mirror having a RMS of 10 angstroms or less can be used for a reflecting mirror with a light damage resistance of several times to several tens of times (maximum instantaneous load and total energy load). Will have. This is because the crystal structure of the mirror surface is more complete because there is no inclusion of impurities, and as a result of eliminating the distortion of the crystal lattice, the transition is extremely reduced and a stable crystal structure oriented in the (220) plane is obtained. At the same time, it is presumed that it is possible to suppress the generation of microscopic step due to the difference in polishing rate (machinability) due to the difference in crystal orientation plane during mirror finishing. Therefore, the surface becomes chemically inactive, and the resistance to corrosion by silicate or the like such as a glass lens mold is remarkably improved.
【００１５】なお、上記基体１を構成する炭化ケイ素焼
結体としては、ホウ素やアルミニウム等の焼結助剤を併
用して焼結したものであってもよいが、いずれにして
も、ホウ素、アルミニウム、及び鉄等の不純物の含有量
は、２００ｐｐｍ以下であることが、特に有害なこれら
不純物が、炭化ケイ素被膜２中に拡散移行するのを抑制
できることから好ましい。The silicon carbide sintered body constituting the substrate 1 may be sintered with a sintering aid such as boron or aluminum, but in any case, boron, The content of impurities such as aluminum and iron is preferably 200 ppm or less, because it is possible to suppress particularly harmful impurities from diffusing and transferring into the silicon carbide coating 2.
【００１６】評価試験 本願発明にかかる複合材及び従来の複合材を用いて反射
鏡を作成し、それぞれの耐力の評価試験を行った。ただ
し、いずれについても炭化ケイ素被膜は、フロートポリ
ッシングによって鏡面仕上げを施した。 (1) 本願発明品 基体の炭化ケイ素含有量 ９９．９重量％ 密 度 ３．１２ｇ／cm
3 ホウ素含有量 ２ｐｐｍ アルミニウム含有量 １００ｐｐｍ 鉄含有量 １００ｐｐｍ (2) 従来品 基体の炭化ケイ素含有量 ９５重量％ 密 度 ３．０ｇ／cm
3 ホウ素含有量 １〜３重量％ アルミニウム含有量 １重量％ 鉄含有量 ５００〜５０００ｐ
ｐｍ (3) 試験条件 従来品と本願発明品とを、以下のの条件でアルゴン
エキシマレーザ光（波長１２６ｎｍ）のショットの重ね
打ちを繰り返し、当該レーザ光を合計３６ｍＪ及び６７
ｍＪ照射した。 Evaluation Test A reflecting mirror was prepared using the composite material according to the present invention and a conventional composite material, and an evaluation test of the proof stress of each was performed. However, in each case, the silicon carbide coating was mirror-finished by float polishing. (1) Invented product Silicon carbide content of substrate 99.9% by weight Density 3.12 g / cm
3 Boron content 2ppm Aluminum content 100ppm Iron content 100ppm (2) Conventional product Substrate silicon carbide content 95wt% Density 3.0g / cm
3 Boron content 1-3 wt% Aluminum content 1 wt% Iron content 500-5000p
pm (3) Test conditions The conventional product and the product of the present invention were repeatedly shot repeatedly with argon excimer laser light (wavelength 126 nm) under the following conditions, and the total laser light was 36 mJ and 67
It was irradiated with mJ.
【００１７】アルゴンガス圧２３ａｔｍ時 最大出力１１ｍＪ／パルス幅（ＦＷＨＭ）〜１０ｎｓ ピークパワー１．１ＭＷ アルゴンガス圧３５ａｔｍ時 最大出力１２．５ｍＪ／パルス幅（ＦＷＨＭ）〜４ｎｓ ピークパワー３．１ＭＷ (4) 評価試験結果 従 来 品：合計３６ｍＪの照射ではダメージは認めら
れず、合計６７ｍＪで白濁した点がみられた。Maximum output 11 mJ / pulse width (FWHM) to 10 ns peak power 1.1 MW at argon gas pressure 23 atm Maximum output 12.5 mJ / pulse width (FWHM) to 4 ns peak power 3.1 MW at argon gas pressure 35 atm Peak power 3.1 MW (4) Evaluation test results Conventional product: No damage was observed at a total irradiation of 36 mJ, and a cloudy point was found at a total of 67 mJ.
【００１８】本願発明品：合計６７ｍＪの照射でもダメ
ージは認められず、白濁した点もなかった。Product of the present invention: No damage was observed even with irradiation of 67 mJ in total, and there was no cloudy point.
【００１９】[0019]
【発明の効果】以上のように、この発明の複合材によれ
ば，基体が高純度の炭化ケイ素焼結体で構成されている
ので、当該基体に炭化ケイ素被膜を蒸着する際に、基体
に含まれる不純物が炭化ケイ素被膜中に拡散移動するの
を抑制することができる。しかも、基体の密度が３．１
２ｇ／ｃｍ3 以上と高密度であり、高濃度の不純物が堆
積する空孔部分が少ないので、当該高濃度の不純物が炭
化ケイ素被膜中に拡散移行するのを抑制することができ
る。As described above, according to the composite material of the present invention, since the substrate is made of the high-purity silicon carbide sintered body, when the silicon carbide coating is vapor-deposited on the substrate, the substrate is Impurities contained can be suppressed from diffusing and moving into the silicon carbide coating. Moreover, the density of the substrate is 3.1.
Since it has a high density of 2 g / cm 3 or more and there are few pores where high-concentration impurities are deposited, it is possible to suppress the high-concentration impurities from diffusing and transferring into the silicon carbide coating film.
【００２０】特に、上記基体中のホウ素、アルミニウ
ム、及び鉄の含有量が、それぞれ２００ｐｐｍ以下であ
るので、特に有害なこれら不純物が、炭化ケイ素被膜中
に拡散移行するのを抑制することができる。したがっ
て、炭化ケイ素被膜の純度が低下するのを抑制すること
ができ、光損傷耐力や耐食性等の諸性能に優れる複合材
となる。 In particular, boron and aluminum in the above substrate
The content of aluminum and iron is 200ppm or less
These particularly harmful impurities are
It is possible to suppress the diffusion transfer to the. Therefore, it is possible to purity of the silicon carbide coating can be inhibited from reduction, ing a composite material which is excellent in various properties such as optical damage tolerance and corrosion resistance.
【００２１】[0021]
【図１】この発明の複合材の一実施例を示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of a composite material of the present invention.
１ 基体 ２ 炭化ケイ素被膜 1 substrate 2 silicon carbide coating
【００２２】[0022]
【図１】この発明の複合材の一実施例を示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of a composite material of the present invention.
【００２３】[0023]
１ 基体 ２ 炭化ケイ素被膜 1 substrate 2 silicon carbide coating
Claims (1)
炭化ケイ素を化学蒸着している複合材において、上記基
体が、炭化ケイ素を９９．９重量％以上含み、密度が
３．１２ｇ／ｃｍ３以上の焼結体であり、かつ上記基体
中のホウ素、アルミニウム、及び鉄の含有量が、それぞ
れ２００ｐｐｍ以下であることを特徴とする複合材。1. A surface of a substrate made of a silicon carbide sintered body,
In composites of silicon carbide is chemical vapor deposition, said substrate comprises a silicon carbide 99.9% by weight or more, Ri density 3.12 g / cm 3 or more sintered bodies der, and the base
The content of boron, aluminum, and iron in the
Composite, characterized in der Rukoto following 200ppm Re.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4147669A JPH0788265B2 (en) | 1992-06-08 | 1992-06-08 | Composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4147669A JPH0788265B2 (en) | 1992-06-08 | 1992-06-08 | Composite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05339080A JPH05339080A (en) | 1993-12-21 |
| JPH0788265B2 true JPH0788265B2 (en) | 1995-09-27 |
Family
ID=15435599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4147669A Expired - Fee Related JPH0788265B2 (en) | 1992-06-08 | 1992-06-08 | Composite material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0788265B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2851818B2 (en) * | 1995-09-08 | 1999-01-27 | 日本ピラー工業株式会社 | Optical element components for high energy beams |
| CN100418651C (en) * | 2006-10-18 | 2008-09-17 | 合肥工业大学 | SiC composite guide roller and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2726693B2 (en) * | 1989-01-30 | 1998-03-11 | 弌倫 木島 | High thermal conductive silicon carbide sintered body and method for producing the same |
| JPH0832591B2 (en) * | 1989-10-11 | 1996-03-29 | 日本ピラー工業株式会社 | Composite material |
-
1992
- 1992-06-08 JP JP4147669A patent/JPH0788265B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05339080A (en) | 1993-12-21 |
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