JPH0712047B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH0712047B2 JPH0712047B2 JP15067486A JP15067486A JPH0712047B2 JP H0712047 B2 JPH0712047 B2 JP H0712047B2 JP 15067486 A JP15067486 A JP 15067486A JP 15067486 A JP15067486 A JP 15067486A JP H0712047 B2 JPH0712047 B2 JP H0712047B2
- Authority
- JP
- Japan
- Prior art keywords
- mold
- semiconductor device
- primary
- resin
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title description 4
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、例えばホトカプラのようなダブルトランス
ファーモールドの半導体装置の製造方法に関し、特にそ
の一次モールドと二次モールドの密着性の向上に係るも
のである。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor device of a double transfer mold such as a photocoupler, and more particularly to improving the adhesion between the primary mold and the secondary mold. Is.
第１図にダブルトランスファーモールドの半導体装置の
一つのホトカプラの一例の構造を示す。FIG. 1 shows an example of the structure of one photocoupler of a double transfer mold semiconductor device.
図において１は外部リード、２は発光ダイオードのチッ
プ、３はホトトランジスタのチップ、４はリード線、５
は光を透過する樹脂による一次モールド部、６は光を透
過しない例えば黒色樹脂による二次モールド部である。In the figure, 1 is an external lead, 2 is a light emitting diode chip, 3 is a phototransistor chip, 4 is a lead wire, 5
Is a primary mold part made of a resin that transmits light, and 6 is a secondary mold part made of, for example, a black resin that does not transmit light.
上記構造のホトカプラは下記のようにして製造される。The photocoupler having the above structure is manufactured as follows.
発光ダイオードのチップ２とホトトランジスタのチップ
３をそれぞれリードフレームにマウントし、各チップ2,
3の電極パットをそれぞれ所定のリードにリード線４で
接続し、発光ダイオードのチップ２とホトトランジスタ
３のチップ３が所定の状態に対峙するようにそれぞれの
リードフレームを保持して、透明樹脂による一次モール
ド５を行い、一次モールド５表面周囲に黒色樹脂による
二次モールド６を行う。The light emitting diode chip 2 and the phototransistor chip 3 are mounted on a lead frame, and each chip 2,
Each of the electrode pads 3 is connected to a predetermined lead by a lead wire 4, and each lead frame is held so that the chip 2 of the light emitting diode and the chip 3 of the phototransistor 3 face each other in a predetermined state. The primary mold 5 is performed, and the secondary mold 6 made of black resin is performed around the surface of the primary mold 5.
モールド終了後、リードフレームの不要部分をプレス切
断によって除去し、残った外部リード１を所定の形状に
整形する。After the molding is completed, unnecessary parts of the lead frame are removed by press cutting, and the remaining external leads 1 are shaped into a predetermined shape.
樹脂モールドには金型が使用されるが、金型内に充填し
た樹脂を冷却固化後容易に樹脂から離すことができるよ
うに、通常、樹脂に含まれる離型剤や事前に金型内面に
ワックスなどの離型剤を塗る事で対応している。A mold is used for the resin mold.In order to easily separate the resin filled in the mold from the resin after cooling and solidifying, the mold release agent contained in the resin or the inner surface of the mold in advance is usually used. This is done by applying a release agent such as wax.
従来は、一次モールド後、モールド樹脂表面の離型剤を
除去するために、表面を洗浄してから、二次モールドを
行なっていた。Conventionally, after the primary molding, in order to remove the release agent on the surface of the molding resin, the surface is washed and then the secondary molding is performed.
従来の方法では、離型剤が完全に除去されずに残り、一
次モールド５と二次モールド６間の密着性が悪くなり、
接着部に生成された間隙で空気中放電を起こし絶縁耐圧
が低下したり湿気が浸入し、電極間の絶縁が低下すると
いう問題があった。In the conventional method, the release agent remains without being completely removed, resulting in poor adhesion between the primary mold 5 and the secondary mold 6,
There has been a problem that electric discharge is caused in the gap formed in the bonded portion to lower the withstand voltage or moisture intrudes, and the insulation between the electrodes is lowered.
この発明は、上記問題を解消するためになされたもの
で、二次モールドが一次モールドに密に接着し、絶縁耐
圧性耐湿性のよいものが得られる製造方法を提供するこ
とを目的とする。The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a manufacturing method in which a secondary mold is closely adhered to a primary mold and a product having good dielectric strength and moisture resistance can be obtained.
この発明の方法は、上記目的を達成するために、一次モ
ールドとして透明樹脂を使用するダブルトランスファー
モールドの半導体装置の製造方法において、一次モール
ド後に前記透明樹脂表面の離型剤を酸水素のガス炎によ
り蒸発させて除去した後に二次モールドを行うこととし
たものである。In order to achieve the above object, the method of the present invention is a method for manufacturing a semiconductor device of a double transfer mold, which uses a transparent resin as a primary mold, wherein a mold release agent on the surface of the transparent resin after the primary molding is oxyhydrogen gas flame. After that, the secondary molding is performed after evaporation and removal by.
それぞれ発光ダイオードのチップ２とホトトランジスタ
のチップ３をマウントしたリードフレームを、該発光ダ
イオードのチップ２とホトトランジスタのチップ３が所
定の状態に対峙するように保持して、透明樹脂による一
次モールド５を行った後、モールド樹脂表面を酸水素の
ガス炎で焼き、表面に付着している離型剤を燃焼させて
除去する。A lead frame on which the light emitting diode chip 2 and the phototransistor chip 3 are mounted is held so that the light emitting diode chip 2 and the phototransistor chip 3 face each other in a predetermined state. After that, the surface of the mold resin is baked with a gas flame of oxyhydrogen, and the release agent attached to the surface is burned and removed.
離型剤などが完全に除去された清浄な一次モールド表面
に二次モールドすると、二次モールドが一次モールドに
密着し、空気中放電や接着界面を通って湿気が内部に浸
入することがなくなり、電極間の絶縁低下を招く恐れが
なくなる。When the secondary mold is formed on the surface of a clean primary mold from which the release agent has been completely removed, the secondary mold adheres to the primary mold, preventing moisture from entering the interior through discharge in the air or through the adhesive interface. There is no risk of lowering the insulation between the electrodes.
上記には、実施例としてホトカプラを示したが、一次モ
ールドとして透明樹脂を使用したダブルトランスファー
モールドの半導体装置全般に適用できることは勿論であ
る。Although the photocoupler is shown as an example in the above, it is needless to say that the invention can be applied to general semiconductor devices of double transfer mold using a transparent resin as a primary mold.
以上のとおり、この発明によれば、一次モールドと二次
モールドの密着が可能となり空気中放電や接着界面を通
っての湿気の浸入がなくなり、湿気のモールド内への浸
入による電極間絶縁の低下がなくなり、信頼性が向上す
るという効果がある。As described above, according to the present invention, the primary mold and the secondary mold can be adhered to each other, so that the infiltration of moisture through the air discharge or the adhesive interface is eliminated, and the insulation between electrodes is reduced due to the infiltration of moisture into the mold. Is eliminated, and the reliability is improved.
第１図はダブルトランスファーモールドの半導体装置の
一つのホトカプラの一例の構造を示す断面図である。 １……外部リード、２……発光ダイオードのチップ、３
……ホトトランジスタのチップ、４……リード線、５…
…一次モールド部、６……二次モールド部。FIG. 1 is a sectional view showing the structure of an example of one photocoupler of a double transfer mold semiconductor device. 1 ... External lead, 2 ... Light emitting diode chip, 3
...... Phototransistor chip, 4 ... Lead wire, 5 ...
… Primary mold part, 6 …… Secondary mold part.
Claims (1)
ブルトランスファーモールドの半導体装置の製造方法に
おいて、 一次モールド後に前記透明樹脂表面の離型剤を酸水素の
ガス炎により蒸発させて除去した後に二次モールドを行
うことを特徴とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device of a double transfer mold, wherein a transparent resin is used as a primary mold. A method of manufacturing a semiconductor device, which comprises molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15067486A JPH0712047B2 (en) | 1986-06-28 | 1986-06-28 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15067486A JPH0712047B2 (en) | 1986-06-28 | 1986-06-28 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS637637A JPS637637A (en) | 1988-01-13 |
| JPH0712047B2 true JPH0712047B2 (en) | 1995-02-08 |
Family
ID=15501993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15067486A Expired - Lifetime JPH0712047B2 (en) | 1986-06-28 | 1986-06-28 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712047B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3435271B2 (en) * | 1995-11-30 | 2003-08-11 | 三菱電機株式会社 | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153133A (en) * | 1984-01-20 | 1985-08-12 | Rohm Co Ltd | Method for removing burr of molded part in electronic parts |
-
1986
- 1986-06-28 JP JP15067486A patent/JPH0712047B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS637637A (en) | 1988-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG65674A1 (en) | Semiconductor device and method of manufacturing the same | |
| JPH0712047B2 (en) | Method for manufacturing semiconductor device | |
| JP2560136B2 (en) | Semiconductor laser device | |
| JPS587645Y2 (en) | semiconductor equipment | |
| JPS54129880A (en) | Manufacture for semiconductor device | |
| JPS5916357A (en) | Semiconductor device | |
| JPS5992552A (en) | Semiconductor device | |
| JPH04129253A (en) | Semiconductor package | |
| JPS5516449A (en) | Semiconductor device | |
| JPS6138193Y2 (en) | ||
| JPS6227548B2 (en) | ||
| JPS6246281Y2 (en) | ||
| JPH01124227A (en) | Semiconductor device | |
| JPS59214244A (en) | Semiconductor device | |
| JPS62152452U (en) | ||
| JPS60258939A (en) | Ceramic base for semiconductor device | |
| JPH01238129A (en) | Resin seal type semiconductor device | |
| JPS59121858A (en) | semiconductor equipment | |
| JPS5936947A (en) | Semiconductor device | |
| JPS6245133A (en) | Pellet mounting method | |
| JPH07130782A (en) | Manufacture of package-type semiconductor device having heatsink | |
| JPS58219754A (en) | Semiconductor device | |
| JPS63170945U (en) | ||
| JPS6018938A (en) | Case for semiconductor device | |
| JPH0363929U (en) |