JPH0682854B2 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPH0682854B2 JPH0682854B2 JP1305632A JP30563289A JPH0682854B2 JP H0682854 B2 JPH0682854 B2 JP H0682854B2 JP 1305632 A JP1305632 A JP 1305632A JP 30563289 A JP30563289 A JP 30563289A JP H0682854 B2 JPH0682854 B2 JP H0682854B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- groove
- thickness
- silicon substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は結晶シリコン基板を用いた太陽電池に係り、特
に光を電力に変換する効率を高めるに好適な裏面接合及
びそれに接触する金属電極の構造を有する太陽電池に関
する。Description: TECHNICAL FIELD The present invention relates to a solar cell using a crystalline silicon substrate, and more particularly to a back surface junction suitable for increasing efficiency of converting light into electric power and a metal electrode in contact therewith. A solar cell having a structure.
従来の太陽電池は素子の両面に電力を取り出す電極を設
けている。光を受ける側の受光面電極は素子面積の４〜
８％を占め出力を低下させている。これによる遮蔽損失
が太陽電池の変換効率の向上を妨げる最も大きな要因と
なっている。この遮蔽損失を無くするには、受光面にあ
る金属電極及び接合層を裏面に配置すれば良く、多接合
構造、ポイントコンタクト構造の集光用太陽電池が開発
されている。上記太陽電池の変換効率は結晶シリコン基
板の厚さが少数キヤリア拡散長以下で最大となる。更
に、太陽電池内部へ入射した光が裏面で反射され外部へ
飛散することなく受光面で反射して再び内部へ進入して
行き、電力に変換される光閉じ込め構造（Light trappi
ng）の太陽電池では結晶シリコン基板の厚さが薄いほど
変換効率は高い。従って太陽電池は薄い基板を用いて製
作することが望ましい。Conventional solar cells have electrodes on both sides of the device for extracting electric power. The light-receiving surface electrode on the light receiving side has a device area of 4 to
It accounts for 8% and reduces output. The resulting shielding loss is the largest factor that hinders the improvement of the conversion efficiency of solar cells. In order to eliminate this shielding loss, the metal electrode and the bonding layer on the light receiving surface may be arranged on the back surface, and a concentrating solar cell having a multi-junction structure and a point contact structure has been developed. The conversion efficiency of the above solar cell is maximized when the thickness of the crystalline silicon substrate is less than the minority carrier diffusion length. Furthermore, the light trapping structure (light trapping structure) in which the light that entered the inside of the solar cell is reflected on the back surface and is reflected on the light-receiving surface without entering the outside and enters the inside again, is converted into electric power.
ng) solar cells, the thinner the crystalline silicon substrate, the higher the conversion efficiency. Therefore, it is desirable to manufacture a solar cell using a thin substrate.
上記従来技術は太陽電池の受光面にある金属電極及び接
合層を裏面に配置すると密度が高くなり、それらのパタ
ーンはキャリアの集電抵抗及び電極の接触抵抗による損
失を低減する為に極めて高精細となる。この為太陽電池
の製造に当りLSIの製造に用いるフォトリゾグラフ技術
による微細パターンニング工程が必要であり、複雑でコ
ストの高いプロセスとなっている。In the above prior art, when the metal electrode and the bonding layer on the light receiving surface of the solar cell are arranged on the back surface, the density becomes high, and these patterns are extremely high-definition because the loss due to the current collecting resistance of the carrier and the contact resistance of the electrode is reduced. Becomes For this reason, a fine patterning process by photolithography technology used in the manufacture of LSI is required in manufacturing a solar cell, which is a complicated and expensive process.
また、結晶シリコン基板を薄くすると、製造工程で割れ
易くなり200μｍを最小厚さとしていた。In addition, when the crystalline silicon substrate is made thin, it easily breaks in the manufacturing process, and the minimum thickness is 200 μm.
本発明の目的は、生産性の高い太陽電池を提供すること
にある。An object of the present invention is to provide a solar cell with high productivity.
上記目的は、結晶シリコン基板の何れか一方の面に、p+
層からなる溝とn+層からなる溝とを交互に近接して形成
し、該p+層からなる複数の溝を一方の端部に設けた溝に
結合して櫛状を成し、前記n+層からなる複数の溝を他方
の端部に設けた溝に結合して櫛状を成し、前記各々の溝
内に金属を充填して電極とした太陽電池において、前記
近接するp+層からなる溝とn+層からなる溝の各々が、６
角形の溝方向に対する斜辺を相互に結合して延長したパ
ターンであることにより達成される。The above-mentioned purpose is p + on either side of the crystalline silicon substrate.
The grooves made of layers and the grooves made of n + layers are alternately formed close to each other, and the plurality of grooves made of the p + layers are combined with the groove provided at one end to form a comb shape, In a solar cell in which a plurality of grooves formed of n + layers are combined with a groove provided at the other end to form a comb, and metal is filled in each of the grooves to form an electrode, the adjacent p + Each of the groove made of layers and the groove made of n + layers is 6
This is achieved by the pattern in which the hypotenuses of the rectangular groove direction are connected to each other and extended.
上記構成によれば、電極間の凸部のピッチが広いので機
械的強度が高く、製造工程におけるＰ型結晶シリコン基
板の割れが極めて少くなる。According to the above structure, since the pitch of the convex portions between the electrodes is wide, the mechanical strength is high and the cracks of the P-type crystalline silicon substrate in the manufacturing process are extremely small.
本発明の実施例を図を用いて説明する。 An embodiment of the present invention will be described with reference to the drawings.
先ず、太陽電池の構成を以下に説明する。First, the structure of the solar cell will be described below.
第1a図は第１実施例の太陽電池の断面を示したものであ
る。ここでは１対のpn接合を例にとり説明する。Ｐ型結
晶シリコン基板15の光が入射する反対側の面に２種類の
溝が接近して形成されている。一方はp+型シリコン再成
長層11、他方はn+型半導体層13からなる溝で、p+型シリ
コン再成長層11の溝内にはアルミニウム・シリコン合金
層12を、n+型半導体層13の溝内にはそれと接する銀の金
属電極14を有する。FIG. 1a shows a cross section of the solar cell of the first embodiment. Here, a pair of pn junctions will be described as an example. Two types of grooves are formed close to each other on the surface of the P-type crystalline silicon substrate 15 on the opposite side to which light is incident. One is a p + type silicon regrowth layer 11 and the other is a groove formed of an n + type semiconductor layer 13, and an aluminum / silicon alloy layer 12 is provided in the groove of the p + type silicon regrowth layer 11 and an n + type semiconductor layer. In the groove of 13, there is a silver metal electrode 14 in contact with it.
Ｐ型結晶シリコン基板15表面のアルミニウム・シリコン
合金層12と金属電極14の間のシリコン酸化膜10が形成さ
れている。A silicon oxide film 10 is formed between an aluminum / silicon alloy layer 12 and a metal electrode 14 on the surface of a P-type crystalline silicon substrate 15.
第1b図は上記の太陽電池の光が入射する反対側の面に形
成したアルミニウム・シリコン合金層12と金属電極14の
配置パターンを示したものである。アルミニウム・シリ
コン合金層12と金属電極14はそれぞれ櫛状で一方の櫛の
歯の間に他方の櫛の歯を挿入したパターンを成してい
る。FIG. 1b shows an arrangement pattern of the aluminum / silicon alloy layer 12 and the metal electrode 14 formed on the surface of the solar cell on the opposite side to which light is incident. The aluminum / silicon alloy layer 12 and the metal electrode 14 are in the shape of a comb, and the teeth of one comb are inserted between the teeth of the other comb.
次に太陽電池を構成する各部材の具体的な構造を説明す
る。Ｐ型結晶シリコン基板15の厚さはほぼ200μｍで上
記溝の深さは約50μｍ、幅は約100μｍ、配置ピッチは1
50μｍとなっている。溝の中にあるアルミニウム・シリ
コン合金層12と金属電極14の厚みはそれぞれ約45μｍ
で、p+型シリコン再成長層11の厚さは約５μｍ、n+型半
導体層13の厚さは約0.35μｍでシート抵抗が約50Ω／平
方となっている。また、p+型シリコン再成長層11とn+型
半導体層13が接合するのを防止しているシリコン酸化膜
10の厚さは約１μｍである。Next, the specific structure of each member constituting the solar cell will be described. The P-type crystalline silicon substrate 15 has a thickness of about 200 μm, the groove has a depth of about 50 μm, a width of about 100 μm, and an arrangement pitch of 1
It is 50 μm. The thickness of the aluminum / silicon alloy layer 12 and the metal electrode 14 in the groove is about 45 μm, respectively.
The p + type silicon regrowth layer 11 has a thickness of about 5 μm, the n + type semiconductor layer 13 has a thickness of about 0.35 μm, and the sheet resistance is about 50 Ω / square. In addition, a silicon oxide film that prevents the p + type silicon regrowth layer 11 and the n + type semiconductor layer 13 from being bonded to each other.
The thickness of 10 is about 1 μm.
次に動作を説明する。Next, the operation will be described.
p+型シリコン再成長層11とn+型半導体層13を溝状に形成
しその中に電極となる部材を充填することにより、接触
面積が増大し接触抵抗による電力損失が低減されるか
ら、実際の出力／理想の出力比で現わされる曲線因子が
高まる。By forming the p + type silicon regrowth layer 11 and the n + type semiconductor layer 13 in the shape of a groove and filling a member to be an electrode therein, the contact area is increased and the power loss due to the contact resistance is reduced. The fill factor represented by the actual output / ideal output ratio increases.
Ｐ型結晶シリコン基板15の少数キャリァ拡散長は約150
μｍであり、Ｐ型結晶シリコン基板15の素材としての厚
さは約200μｍあるが、n+型半導体層13の溝が約50μｍ
あり太陽電池として作動する厚さは約150μｍで、基盤
の素材厚さを薄くすることなく受光面に近い領域におけ
る生成キャリァの集電効果が向上する。更に、受光面か
ら入射してアルミニウム・シリコン合金層12で反射され
た光がp+型シリコン再成長層11とn+型半導体層13が接近
している場所で吸収される為集電効果が向上する。The minority carrier diffusion length of the P-type crystalline silicon substrate 15 is about 150.
The thickness of the P-type crystalline silicon substrate 15 is about 200 μm, but the groove of the n + -type semiconductor layer 13 is about 50 μm.
Yes The solar cell has a thickness of about 150 μm, which improves the current collection effect of the carrier generated in the region near the light receiving surface without reducing the material thickness of the substrate. Further, the light incident on the light-receiving surface and reflected by the aluminum-silicon alloy layer 12 is absorbed at a place where the p + type silicon regrowth layer 11 and the n + type semiconductor layer 13 are close to each other, so that a current collecting effect is obtained. improves.
次に製造方法を説明する。Next, the manufacturing method will be described.
Ｐ型結晶シリコン基板15は加工する前の厚さは約250μ
ｍ、比抵抗1.5Ωcm、少数キャリァ拡散長は約150μｍで
ある。入射した光が乱反射した後吸収されてキャリァと
なるようにＰ型結晶シリコン基板15の表面を無反射化す
る為の凹凸処理としてアルカリエッチングを行い、その
結果厚さは約200μｍとなる。Ｐ型結晶シリコン基板15
の両面を湿式酸化法により約１μｍの酸化膜を形成す
る。この後一方の面に溝を形成する為、第1b図に示す２
つの櫛型パターンのピッチ150μｍで線幅約100μｍを残
しそれ以外の部分にエッチングレジストを印刷法により
塗布する。受光面となる他方の面はエッチングをしない
ので同様にエッチングレジストを塗布する。レジストを
塗布したＰ型結晶シリコン基板15をHF/HNO3系エッチン
グ液に１分浸漬してエッチングし、エッチング後エッチ
ングレジストを除去してピッチ150μｍで線幅約100μ
ｍ、深さ50μｍの溝が得られる。Ｐ型結晶シリコン基板
15の溝の外に形成してあるシリコン酸化膜10と一方の溝
をマスクして燐拡散を行い他の溝部に厚さ約0.35μｍの
n+型半導体層13を形成する。一方の溝にアルミニウムを
含む印刷用ペーストを厚さ約50μｍ印刷し、その後アル
ミニウムとシリコンが高温で反応してp+になる再成長反
応を利用し750℃の窒素雰囲気中で10分間加熱し、厚さ
約５μｍのp+型シリコン再成長層11とこれに接する厚さ
約45μｍのアルミニウム・シリコン合金層12を形成す
る。他方のn+型半導体層13から成る溝に銀を含む銀ペー
ストを厚さ約50μｍ印刷し、600℃の窒素雰囲気中で１
分間加熱し、厚さ約45μｍの金属電極14を形成する。The thickness of the P-type crystalline silicon substrate 15 before processing is about 250μ.
m, specific resistance 1.5 Ωcm, minority carrier diffusion length is about 150 μm. Alkaline etching is performed as a concavo-convex process for making the surface of the P-type crystalline silicon substrate 15 non-reflective so that incident light is diffusely reflected and then absorbed to become carriers, resulting in a thickness of about 200 μm. P-type crystalline silicon substrate 15
An oxide film having a thickness of about 1 μm is formed on both surfaces of the same by a wet oxidation method. After this, a groove is formed on one surface.
A line width of about 100 μm is left with a pitch of one comb pattern of 150 μm, and an etching resist is applied to the other portions by a printing method. Since the other surface, which is the light receiving surface, is not etched, an etching resist is similarly applied. The P-type crystalline silicon substrate 15 coated with the resist is immersed in an HF / HNO 3 based etching solution for 1 minute for etching, and after etching, the etching resist is removed to have a line width of about 100 μm at a pitch of 150 μm.
A groove having a depth of m and a depth of 50 μm is obtained. P-type crystalline silicon substrate
The silicon oxide film 10 formed outside the 15 grooves and one groove are masked for phosphorus diffusion, and the other groove is formed with a thickness of about 0.35 μm.
An n + type semiconductor layer 13 is formed. Printing a printing paste containing aluminum to a thickness of about 50 μm in one groove, and then heating for 10 minutes in a nitrogen atmosphere at 750 ° C using the regrowth reaction of aluminum and silicon at high temperature to form p + , A p + type silicon regrowth layer 11 having a thickness of about 5 μm and an aluminum-silicon alloy layer 12 having a thickness of about 45 μm in contact therewith are formed. A silver paste containing silver is printed in a thickness of about 50 μm on the other groove formed of the n + type semiconductor layer 13 and the temperature is set to 1 in a nitrogen atmosphere at 600 ° C.
After heating for a minute, the metal electrode 14 having a thickness of about 45 μm is formed.
第2a図は本発明の第２実施例の太陽電池の断面を示した
ものである。この太陽電池２は第2b図に示す電流パス部
となる六角網目パターンの二辺が接続した凸部16に囲ま
れた凹部17からなるＰ型結晶シリコン基板15と前記凹部
内に相互に近接して形成したp+型シリコン再成長層11と
n+型半導体層13とそれらと接触するアルミニウム・シリ
コン合金層12と金属電極14を有する。また、凸部表面に
シリコン酸化膜10を有する。FIG. 2a shows a cross section of a solar cell according to a second embodiment of the present invention. This solar cell 2 has a P-type crystalline silicon substrate 15 composed of a concave portion 17 surrounded by a convex portion 16 connected to two sides of a hexagonal mesh pattern serving as a current path portion shown in FIG. P + type silicon regrowth layer 11 formed by
It has an n + type semiconductor layer 13, an aluminum-silicon alloy layer 12 and a metal electrode 14 which are in contact with them. Also, the silicon oxide film 10 is provided on the surface of the convex portion.
太陽電池２において、Ｐ型結晶シリコン基板15は厚さが
ほぼ200μｍとなっている。凸部16は幅がほぼ100μｍ、
次の凸部迄のピッチが6mm、高さがほぼ50μｍとなって
いる。凸部16に囲まれた凹部17は、厚さがほぼ150μｍ
と薄くなっている。p+型シリコン再成長層11の厚さは約
５μｍ、n+型半導体層13の厚さは約0.35μｍでシート抵
抗が約50Ω／平方となっている。溝の中にあるアルミニ
ウム・シリコン合金層12と金属電極14の厚みはそれぞれ
約45μｍで、また、p+型シリコン再成長層11とn+型半導
体層13が接合するのを防止しているシリコン酸化膜10の
厚さは約１μｍである。In the solar cell 2, the P-type crystalline silicon substrate 15 has a thickness of about 200 μm. The convex portion 16 has a width of about 100 μm,
The pitch to the next convex portion is 6 mm and the height is approximately 50 μm. The recess 17 surrounded by the projection 16 has a thickness of approximately 150 μm.
Is becoming thinner. The p + type silicon regrowth layer 11 has a thickness of about 5 μm, the n + type semiconductor layer 13 has a thickness of about 0.35 μm, and the sheet resistance is about 50 Ω / square. The aluminum / silicon alloy layer 12 and the metal electrode 14 in the groove each have a thickness of about 45 μm, and silicon that prevents the p + type silicon regrowth layer 11 and the n + type semiconductor layer 13 from being bonded to each other. The oxide film 10 has a thickness of about 1 μm.
第２実施例の構造では凸部16のピッチが広いので機械的
強度を高める補強効果が有り、第１実施例の太陽電池１
に比べ製造工程におけるＰ型結晶シリコン基板15の割れ
が極めて少なかった。In the structure of the second embodiment, since the pitch of the convex portions 16 is wide, there is a reinforcing effect of increasing the mechanical strength.
The number of cracks in the P-type crystalline silicon substrate 15 in the manufacturing process was extremely small as compared with the above.
本実施例では、Ｐ型結晶シリコン基板を用いたがこれに
限定されるものでなく、Ｎ型結晶シリコン基板を用いて
も同様の効果が得られる。Although the P-type crystal silicon substrate is used in this embodiment, the present invention is not limited to this, and the same effect can be obtained by using the N-type crystal silicon substrate.
本発明によれば、電極間の凸部のピッチが広いので機械
的強度が高く、製造工程におけるＰ型結晶シリコン基板
の割れが極めて少く、生産性が向上する効果が得られ
る。According to the present invention, since the pitch of the convex portions between the electrodes is wide, the mechanical strength is high, the cracks of the P-type crystalline silicon substrate in the manufacturing process are extremely small, and the effect of improving the productivity can be obtained.
第1a図は本発明の第１実施例に係る太陽電池の縦断面
図、第1b図は本発明の第１実施例に係る結晶シリコン基
板の受光面と反対側の面に形成した溝のパターンを示す
正面図、第2a図は本発明の第２実施例に係る太陽電池の
縦断面図、第2b図は本発明の第２実施例に係る結晶シリ
コン基板の受光面と反対側の面に形成した溝のパターン
を示す正面図である。 １……太陽電池、２……太陽電池、 11……p+型シリコン再成長層、 12……アルミニウム・シリコン合金層、 13……n+型半導体層、14……金属電極、 15……Ｐ型結晶シリコン基板、16……凸部、 17……凹部FIG. 1a is a longitudinal sectional view of a solar cell according to the first embodiment of the present invention, and FIG. 1b is a groove pattern formed on a surface opposite to a light receiving surface of a crystalline silicon substrate according to the first embodiment of the present invention. FIG. 2a is a vertical sectional view of a solar cell according to a second embodiment of the present invention, and FIG. 2b is a surface opposite to the light receiving surface of the crystalline silicon substrate according to the second embodiment of the present invention. It is a front view which shows the pattern of the formed groove. 1 …… solar cell, 2 …… solar cell, 11 …… p + type silicon regrowth layer, 12 …… aluminum-silicon alloy layer, 13 …… n + type semiconductor layer, 14 …… metal electrode, 15 …… P-type crystalline silicon substrate, 16 ... convex portion, 17 ... concave portion
───────────────────────────────────────────────────── フロントページの続き (72)発明者 八木 秀幸 茨城県日立市幸町３丁目１番１号 株式会 社日立製作所日立工場内 (56)参考文献 特開 昭63−287077（ＪＰ，Ａ) 特開 昭62−205667（ＪＰ，Ａ) 特開 平１−125988（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hideyuki Yagi Inventor Hideyuki Yagi 3-1-1, Sachimachi, Hitachi City, Ibaraki Hitachi Ltd. Hitachi Plant (56) References JP 63-287077 (JP, A) JP-A-62-205667 (JP, A) JP-A-1-125988 (JP, A)
Claims (1)
層からなる溝とn+層からなる溝とを交互に近接して形成
し、該p+層からなる複数の溝を一方の端部に設けた溝に
結合して櫛状を成し、前記n+層からなる複数の溝を他方
の端部に設けた溝に結合して櫛状を成し、前記各々の溝
内に金属を充填して電極とした太陽電池において、前記
近接するp+層からなる溝とn+層からなる溝の各々が、６
角形の溝方向に対する斜辺を相互に結合して延長したパ
ターンであることを特徴とする太陽電池。1. A p + + film on either surface of a crystalline silicon substrate.
The grooves made of layers and the grooves made of n + layers are alternately formed close to each other, and the plurality of grooves made of the p + layers are combined with the groove provided at one end to form a comb shape, In a solar cell in which a plurality of grooves formed of n + layers are combined with a groove provided at the other end to form a comb, and metal is filled in each of the grooves to form an electrode, the adjacent p + Each of the groove made of layers and the groove made of n + layers is 6
A solar cell having a pattern in which hypotenuses of a rectangular groove are connected to each other and extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1305632A JPH0682854B2 (en) | 1989-11-24 | 1989-11-24 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1305632A JPH0682854B2 (en) | 1989-11-24 | 1989-11-24 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03165578A JPH03165578A (en) | 1991-07-17 |
| JPH0682854B2 true JPH0682854B2 (en) | 1994-10-19 |
Family
ID=17947468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1305632A Expired - Fee Related JPH0682854B2 (en) | 1989-11-24 | 1989-11-24 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682854B2 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0793453B2 (en) * | 1992-03-11 | 1995-10-09 | 株式会社日立製作所 | Method for manufacturing silicon solar cell element |
| US6084175A (en) * | 1993-05-20 | 2000-07-04 | Amoco/Enron Solar | Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts |
| JPH08148709A (en) * | 1994-11-15 | 1996-06-07 | Mitsubishi Electric Corp | Thin solar cell manufacturing method and thin solar cell manufacturing apparatus |
| US5641362A (en) * | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
| US6402839B1 (en) | 1998-08-14 | 2002-06-11 | Ebara Solar, Inc. | System for stabilizing dendritic web crystal growth |
| JP4748830B2 (en) * | 2000-03-21 | 2011-08-17 | シチズンホールディングス株式会社 | Electronic device with solar cell and solar cell module |
| JP2003298078A (en) * | 2002-03-29 | 2003-10-17 | Ebara Corp | Photovoltaic element |
| JP4467337B2 (en) * | 2004-03-15 | 2010-05-26 | シャープ株式会社 | Solar cell module |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| FR2880989B1 (en) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND INTERDIGITAL STRUCTURE |
| KR101164345B1 (en) * | 2007-11-22 | 2012-07-09 | 샤프 가부시키가이샤 | Wiring member between elements, photoelectric conversion element, and photoelectric conversion element connecting body and photoelectric conversion module using the wiring member between elements and the photoelectric conversion element |
| JP2009188355A (en) * | 2008-02-08 | 2009-08-20 | Sanyo Electric Co Ltd | Solar cell |
| GB0820684D0 (en) * | 2008-11-12 | 2008-12-17 | Silicon Cpv Plc | Photovoltaic solar cells |
| US9559228B2 (en) * | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
| JP6338990B2 (en) | 2014-09-19 | 2018-06-06 | 株式会社東芝 | Multi-junction solar cell |
| EP3118901B1 (en) | 2015-07-15 | 2019-10-16 | LG Electronics Inc. | Solar cell and solar cell module |
| DE102017108077A1 (en) * | 2017-04-13 | 2018-10-18 | Hanwha Q Cells Gmbh | Solar cell production method |
| US12199195B2 (en) * | 2022-09-09 | 2025-01-14 | Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for manufacturing photovoltaic module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62205667A (en) * | 1986-03-05 | 1987-09-10 | Nec Corp | Photoelectric conversion element |
| JPS63287077A (en) * | 1987-05-20 | 1988-11-24 | Hitachi Ltd | Photoelectric conversion device |
| JPH01125988A (en) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | Solar cell element |
-
1989
- 1989-11-24 JP JP1305632A patent/JPH0682854B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03165578A (en) | 1991-07-17 |
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