JPH0231508B2 - - Google Patents
Info
- Publication number
- JPH0231508B2 JPH0231508B2 JP59092861A JP9286184A JPH0231508B2 JP H0231508 B2 JPH0231508 B2 JP H0231508B2 JP 59092861 A JP59092861 A JP 59092861A JP 9286184 A JP9286184 A JP 9286184A JP H0231508 B2 JPH0231508 B2 JP H0231508B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- interconnector
- lead
- semiconductor substrate
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000000034 method Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、太陽電池素子の受光面および裏面の
電極構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to electrode structures on the light-receiving surface and back surface of a solar cell element.
従来の太陽電池素子の受光面の電極パターンは
第１図及び第２図に示すように、例えばｐ型Si基
板１に熱拡散等の方法により、受光面１１側に
n+層１３を形成し、その上に反射防止膜４及び
印刷法或いは蒸着法により集電電極２を形成した
構造である。その集電電極２のパターンは、第１
図ａ，ｂに示すように平行線状或いは六角網目状
に形成され、素子をインターコネクタリードによ
り直列接続するためのバスバー電極７が図示のパ
ターンで形成されている。しかしながら、第１図
に示すくし形パターンおよびハニカムパターン電
極では、バスバー電極を半田デイツピング法等に
より、形成する際、半田厚を均一にすることが困
難となる。即ち、半田デイツピング法では、引上
げる方向に対して、下方側に半田が流れて厚くな
る傾向が有る。このため、インターコネクタリー
ド接続時に良好な密着性が得られないという問題
がある。また、インターコネクタリード接続時の
位置ずれを考慮し、バスバー電極の幅をリード幅
以上にする必要があるが、そのようにすると光の
遮へい面積が増加し、電気出力の低下を招くとい
う問題がある。
The electrode pattern on the light-receiving surface of a conventional solar cell element is as shown in FIGS.
It has a structure in which an n + layer 13 is formed, and an antireflection film 4 and a current collecting electrode 2 are formed thereon by a printing method or a vapor deposition method. The pattern of the current collecting electrode 2 is the first
As shown in Figures a and b, bus bar electrodes 7 are formed in the shape of parallel lines or hexagonal meshes, and are used to connect elements in series through interconnector leads. However, with the comb pattern and honeycomb pattern electrodes shown in FIG. 1, it is difficult to make the solder thickness uniform when forming the bus bar electrodes by a solder dipping method or the like. That is, in the solder dipping method, the solder tends to flow downward and become thicker in the pulling direction. For this reason, there is a problem that good adhesion cannot be obtained when interconnector leads are connected. In addition, in consideration of positional misalignment when interconnector leads are connected, it is necessary to make the width of the busbar electrodes larger than the lead width, but doing so increases the area of light shielding and causes a reduction in electrical output. be.
第２図ａ，ｂは、バスバー電極７を小さく分割
して上記欠点を補う構造であるが、電極７とリー
ドの接着面積が小さいため、接着強度が弱いとい
う欠点がある。 FIGS. 2a and 2b show a structure in which the busbar electrode 7 is divided into small pieces to compensate for the above drawback, but since the bonding area between the electrode 7 and the lead is small, the bonding strength is weak.
本発明の目的は、半田付性が良好で、インター
コネクタリードとの接着強度に優れ、光のシヤド
ウロスの少ない信頼性の高い太陽電池素子を提供
することにある。
An object of the present invention is to provide a highly reliable solar cell element with good solderability, excellent adhesive strength with interconnector leads, and low light shadow loss.
本発明の太陽電池素子の特徴とするところは、
分割されたバスバー電極の間に、インターコネク
タリードの幅以下のパターンを設ける点にある。
The features of the solar cell element of the present invention are as follows:
The point is that a pattern having a width less than the width of the interconnect lead is provided between the divided bus bar electrodes.
以下本発明を実施例として示した図面を用いて
詳細に説明する。第３図は本発明の太陽電池素子
の一実施例を示す平面図及び断面図である。厚さ
0.3〜0.4mmのｐ型単結晶又は多結晶Si基板１の一
方の主表面（受光面）１１に熱拡散法或いはイオ
ン打込み法等によりn+層１３が形成され、これ
に接して光の反射率を少なくするためのTi、Sn、
酸化物等の反射防止膜４及び印刷法又は蒸着法に
より受光面に集電電極２が形成され、さらに他方
の主表面（裏面）１２にAl印刷法等によりp+層
１４および電極３が形成されている。第３図ａは
電極２がくし形パターン、ｂはハニカムパターン
を有する場合を示しているが、それぞれ太陽電池
素子相互を直列接続するためのインターコネクタ
リードが接続される部分に、電極２に連なりイン
ターコネクタリードの幅より大きい幅を有する第
１のパツド部７１及び第１のパツド部７１相互間
に位置しそれより幅の小さい第２のパツド電極７
２を設けてある。第３図ｄはインターコネクタリ
ード９を接続した状態を示す平面図である。イン
ターコネクタリード９は、第１のパツド部７１及
び第２のパツド部７２に各々接続されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to drawings showing examples thereof. FIG. 3 is a plan view and a sectional view showing an embodiment of the solar cell element of the present invention. thickness
An n + layer 13 is formed on one main surface (light-receiving surface) 11 of a 0.3 to 0.4 mm p-type single crystal or polycrystalline Si substrate 1 by thermal diffusion or ion implantation, and in contact with this, light is reflected. Ti, Sn, to reduce the rate
A collector electrode 2 is formed on the light-receiving surface by an anti-reflection film 4 such as an oxide and a printing method or a vapor deposition method, and a p + layer 14 and an electrode 3 are further formed on the other main surface (back surface) 12 by an Al printing method or the like. has been done. Fig. 3a shows the case where the electrode 2 has a comb-shaped pattern, and Fig. 3b shows the case where the electrode 2 has a honeycomb pattern. A first pad portion 71 having a width larger than the width of the connector lead, and a second pad electrode 7 located between the first pad portions 71 and having a smaller width than the first pad portion 71.
2 are provided. FIG. 3d is a plan view showing a state in which interconnector leads 9 are connected. The interconnector leads 9 are connected to a first pad section 71 and a second pad section 72, respectively.
かかる構造にすれば、バスバー電極７が多数の
第１及び第２のパツド部７１，７２に分割されて
いるため、半田のぬれ性、均一性が良好であり、
また、バスバー電極７とインターコネクタリード
９との接着面積は、第１のパツド部７１の面積に
第２のパツド部７２の面積が加わつて大きくな
り、このため接着強度が向上し昼夜の過酷な冷熱
サイクルにも充分信頼性の高い太陽電池モジユー
ルを実現できる。更に、インターコネクタリード
９をバスバー電極７に接続する時の位置ずれを考
慮してバスバー電極７の幅をインターコネクタリ
ード９の幅より大きくした部分は第１のパツド部
７１のみで、第２のパツド部７２の幅はインター
コネクタリード９の幅より小さくされているた
め、光のシヤドウロスを低減できるという効果が
ある。 With this structure, since the bus bar electrode 7 is divided into a large number of first and second pad parts 71 and 72, the solder wettability and uniformity are good.
Further, the bonding area between the busbar electrode 7 and the interconnector lead 9 becomes larger due to the addition of the area of the second pad portion 72 to the area of the first pad portion 71, which improves the bonding strength and makes it possible to withstand harsh conditions during the day and night. It is possible to realize a solar cell module that is highly reliable even in cold and hot cycles. Furthermore, in consideration of positional deviation when interconnector lead 9 is connected to busbar electrode 7, the width of busbar electrode 7 is made larger than the width of interconnector lead 9 only in first pad part 71; Since the width of the pad portion 72 is smaller than the width of the interconnector lead 9, there is an effect that shadow loss of light can be reduced.
第４図は本発明の他の実施例を示すインターコ
ネクタリード９接続後の平面図である。受光面１
１に設けるバスバー電極７の第１のパツド部７の
角部に丸みＲを設け、シヤドウロスをさらに低減
できる効果を有する電極構造である。 FIG. 4 is a plan view of another embodiment of the present invention after interconnector leads 9 are connected. Light receiving surface 1
This electrode structure has the effect of further reducing shadow loss by providing a rounded corner of the first pad portion 7 of the bus bar electrode 7 provided in the second embodiment.
以上は本発明を受光面の電極について説明した
が、裏面の電極パターンにも適用できる。 Although the present invention has been described above regarding the electrodes on the light-receiving surface, it can also be applied to the electrode pattern on the back surface.
本発明によれば、太陽電池素子を直列接続する
際のインターコネクタリードとバスバー電極の接
着性も良好で信頼性が高く、かつ光のシヤドウロ
スの少ない高効率な太陽電池素子を提供できるの
で、その効果は大きい。
According to the present invention, it is possible to provide a highly efficient solar cell element that has good adhesion between interconnector leads and bus bar electrodes when connecting solar cell elements in series, is highly reliable, and has low light shadow loss. The effect is great.
第１図及び第２図は従来の太陽電池素子を示す
断面図及び平面図、第３図は、本発明の一実施例
を示す受光面側の平面図及び断面図、第４図は、
本発明の他の実施例を示す受光面側平面図であ
る。
１……Si基板、２……集電電極、３……裏面電
極、７……バスバー電極、９……インターコネク
タリード、１１……受光面、７１，７２……バス
バー電極のパツド部。
1 and 2 are a sectional view and a plan view showing a conventional solar cell element, FIG. 3 is a plan view and a sectional view on the light receiving surface side showing an embodiment of the present invention, and FIG. 4 is a sectional view and a plan view showing a conventional solar cell element.
FIG. 7 is a plan view on the light receiving surface side showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Si substrate, 2... Current collection electrode, 3... Back electrode, 7... Busbar electrode, 9... Interconnector lead, 11... Light receiving surface, 71, 72... Pad portion of busbar electrode.
Claims (1)
の一方の主表面の全面に所定の密度で選択された
部分にオーミツク接触した細線状の第一の電極
と、半導体基体の一方の主表面に第１の電極と交
差するように設けられた所定幅を有するバスバー
電極と、半導体基体の他方の主表面の選択された
部分にオーミツク接触した第２の電極と、バスバ
ー電極に接続されたインターコネクタリードとを
具備するものにおいて、上記バスバー電極が上記
インターコネクタリードの延設方向に沿つて、上
記インターコネクタリードの延設方向と直角方向
の幅が上記インターコネクタリードのそれより大
きい複数個の第１の部分と、第１の部分間に位置
して第１の部分より幅の小さい複数個の第２の部
分とに分割されていることを特徴とする太陽電池
素子。1 A semiconductor substrate having a PN junction, a thin wire-shaped first electrode in ohmic contact with a selected portion at a predetermined density on the entire surface of one main surface of the semiconductor substrate, and a first electrode on one main surface of the semiconductor substrate. a busbar electrode having a predetermined width and provided to intersect with the electrode of the semiconductor substrate; a second electrode in ohmic contact with a selected portion of the other main surface of the semiconductor substrate; and an interconnector lead connected to the busbar electrode. The bus bar electrode includes a plurality of first electrodes along the extending direction of the interconnector lead, the width of which is larger in a direction perpendicular to the extending direction of the interconnector lead than that of the interconnector lead. A solar cell element characterized in that it is divided into a plurality of second parts located between the first parts and having a width smaller than the first part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59092861A JPS60239067A (en) | 1984-05-11 | 1984-05-11 | solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59092861A JPS60239067A (en) | 1984-05-11 | 1984-05-11 | solar cell element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60239067A JPS60239067A (en) | 1985-11-27 |
| JPH0231508B2 true JPH0231508B2 (en) | 1990-07-13 |
Family
ID=14066209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59092861A Granted JPS60239067A (en) | 1984-05-11 | 1984-05-11 | solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60239067A (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190477A (en) * | 1984-10-09 | 1986-05-08 | Mitsubishi Electric Corp | solar cell element |
| JPS6248032A (en) * | 1985-08-28 | 1987-03-02 | Sharp Corp | Wafer for solar battery |
| JP2000340812A (en) * | 1999-05-28 | 2000-12-08 | Kyocera Corp | Solar cell |
| JP4232597B2 (en) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | Silicon solar cell and manufacturing method thereof |
| JP4684075B2 (en) * | 2005-10-14 | 2011-05-18 | シャープ株式会社 | Solar cell, solar cell string and solar cell module |
| US20090277491A1 (en) * | 2005-10-14 | 2009-11-12 | Sharp Kabushiki Kaisha | Solar Cell, Interconnector-Equipped Solar Cell, Solar Cell String And Solar Cell Module |
| JP4040662B1 (en) * | 2006-07-13 | 2008-01-30 | シャープ株式会社 | Solar cell, solar cell string and solar cell module |
| EP2012362A1 (en) | 2006-04-14 | 2009-01-07 | Sharp Kabushiki Kaisha | Solar cell, solar cell string and solar cell module |
| JP4040659B2 (en) * | 2006-04-14 | 2008-01-30 | シャープ株式会社 | Solar cell, solar cell string, and solar cell module |
| TWI487124B (en) | 2006-08-25 | 2015-06-01 | Sanyo Electric Co | Solar battery module and solar battery module manufacturing method |
| JP4429306B2 (en) * | 2006-12-25 | 2010-03-10 | 三洋電機株式会社 | Solar cell and solar cell module |
| JP4741538B2 (en) * | 2007-03-27 | 2011-08-03 | 京セラ株式会社 | Solar cell module |
| US20100000602A1 (en) * | 2007-12-11 | 2010-01-07 | Evergreen Solar, Inc. | Photovoltaic Cell with Efficient Finger and Tab Layout |
| JP5020179B2 (en) * | 2008-07-22 | 2012-09-05 | 京セラ株式会社 | Solar cell module |
| JP5274405B2 (en) * | 2009-07-29 | 2013-08-28 | 三菱電機株式会社 | Solar cells |
| JP2011003936A (en) * | 2010-09-30 | 2011-01-06 | Sanyo Electric Co Ltd | Photovoltaic module and photovolatic element |
| CN102479853B (en) * | 2010-11-30 | 2016-04-13 | 比亚迪股份有限公司 | A kind of solar battery sheet |
| WO2014196307A1 (en) * | 2013-06-07 | 2014-12-11 | 信越化学工業株式会社 | Back-contact-type solar cell |
| EP3399556A1 (en) * | 2014-07-07 | 2018-11-07 | Lg Electronics Inc. | Solar cell module |
| DE102014110526B4 (en) | 2014-07-25 | 2018-03-15 | Hanwha Q Cells Gmbh | Solar cell string and solar cell string manufacturing process |
| JPWO2016068237A1 (en) * | 2014-10-29 | 2017-08-03 | 京セラ株式会社 | Solar cell module |
-
1984
- 1984-05-11 JP JP59092861A patent/JPS60239067A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60239067A (en) | 1985-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0231508B2 (en) | ||
| US4352948A (en) | High-intensity solid-state solar-cell device | |
| EP0482511B1 (en) | Integrated photovoltaic device | |
| KR101258968B1 (en) | Solar cell and solar cell manufacturing method | |
| US6211455B1 (en) | Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same | |
| US4542258A (en) | Bus bar interconnect for a solar cell | |
| JP2006270043A (en) | Solar cell module | |
| JPH09116175A (en) | Electrode structure of photovoltaic device | |
| AU2023309527A1 (en) | Photovoltaic cell unit and use thereof | |
| WO2022142054A1 (en) | Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell | |
| JP2001068699A (en) | Solar cell | |
| JPH03165578A (en) | solar cells | |
| US20180219109A1 (en) | Solar module and method for manufacturing the solar module | |
| JP3749079B2 (en) | Solar cell and manufacturing method thereof | |
| JPH11214733A (en) | Solar cell equipment | |
| JPH03283474A (en) | Compound semiconductor photoelectric conversion device on Si substrate | |
| JP3683700B2 (en) | Solar cell device | |
| JP2000164901A (en) | Solar cell | |
| GB2107928A (en) | Solar cell assembly | |
| JP2000340812A (en) | Solar cell | |
| JPH1065198A (en) | Right-angled triangular solar cell module and manufacturing method thereof | |
| JPH09283781A (en) | Photovoltaic device | |
| JPS63119274A (en) | Solar cell element | |
| CN216450658U (en) | Photovoltaic installations and components | |
| JPH11135812A (en) | Method of forming solar cell element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |