JPH0439778B2 - - Google Patents
Info
- Publication number
- JPH0439778B2 JPH0439778B2 JP59005888A JP588884A JPH0439778B2 JP H0439778 B2 JPH0439778 B2 JP H0439778B2 JP 59005888 A JP59005888 A JP 59005888A JP 588884 A JP588884 A JP 588884A JP H0439778 B2 JPH0439778 B2 JP H0439778B2
- Authority
- JP
- Japan
- Prior art keywords
- welding
- lid
- welding electrode
- semiconductor package
- package base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003466 welding Methods 0.000 claims description 81
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K11/00—Resistance welding; Severing by resistance heating
- B23K11/002—Resistance welding; Severing by resistance heating specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/04—Tubular or hollow articles
- B23K2101/12—Vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は、シーム溶接方法に係り、特に、半導
体パツケージの基体に取付けられた金属のシール
フレームとその上に被せる金属の蓋との溶接方法
に関す。[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention relates to a seam welding method, and particularly to a method for welding a metal seal frame attached to a base of a semiconductor package and a metal lid placed thereon. Regarding.
(b) 技術の背景
最近の半導体装置は、半導体チツプのパツシベ
ーシヨン技術が向上してモールドパツケージのも
のが多いが、高信頼度を必要としたり特殊環境下
で使用されるものについては、依然として金属や
セラミツクなどを組み合わせて気密封止したパツ
ケージを使用したものが重要な地位を占めてい
る。(b) Technology Background Although many recent semiconductor devices are molded packages due to improvements in semiconductor chip packaging technology, devices that require high reliability or are used in special environments still rely on metal or other devices. Products that use a hermetically sealed package made from a combination of materials such as ceramics occupy an important position.
本発明に係るシーム溶接は、前記パツケージに
おいて蓋を取付ける方法の一手段で、既に周知の
手段であるが、溶接後の気密性が完全であること
が望まれている。 Seam welding according to the present invention is a method of attaching a lid to the package, and is already a well-known method, but it is desired that the seam welding be completely airtight after welding.
(c) 従来技術と問題点
第1図は半導体パツケージの一実施例の断面
図、第2図はその半導体パツケージにおけるシー
ム溶接を説明するための平面図a,b、第3図は
そのシーム溶接の従来の方法の実施例における溶
接電極と半導体パツケージとの配置を示す正面
図、第4図はその溶接で発生するシールフレーム
と蓋との欠けを示す図、第5図は同じくパツケー
ジ基体の割れを示す図で、1は半導体チツプ、2
はリード端子、3はパツケージ基体、4はシール
フレーム、5は蓋、6は溶接電極、7は欠け、8
は割れ、A,Bは方向をそれぞれ示す。(c) Prior art and problems Figure 1 is a cross-sectional view of an embodiment of a semiconductor package, Figure 2 is a plan view a and b for explaining seam welding in the semiconductor package, and Figure 3 is a diagram of the seam welding. FIG. 4 is a front view showing the arrangement of the welding electrode and semiconductor package in an example of the conventional method, FIG. In this figure, 1 is a semiconductor chip, 2 is a semiconductor chip, and 2 is a semiconductor chip.
is a lead terminal, 3 is a package base, 4 is a seal frame, 5 is a lid, 6 is a welding electrode, 7 is a chip, 8
indicates the crack, and A and B indicate the direction, respectively.
第1図図示の半導体パツケージは、例えば本体
がセラミツクでなり内部に半導体チツプ1を搭載
し半導体チツプ1の回路を外部のリード端子2に
導出するパツケージ基体3に、角形枠状の例えば
コバールでなるシールフレーム4がろう付けされ
ており、これに、例えばコバールの板でなる蓋5
がシーム溶接によつて気密に溶接されてなつてい
る。 The semiconductor package shown in FIG. 1 has a main body made of, for example, ceramic, a semiconductor chip 1 mounted therein, and a package base 3 that leads out the circuit of the semiconductor chip 1 to external lead terminals 2, and a square frame-shaped package made of, for example, Kovar. A sealing frame 4 is soldered to this, and a lid 5 made of, for example, a Kovar plate is attached to this.
are welded airtight using seam welding.
前記シーム溶接の方法は第2図図示の如くで、
シールフレーム4に蓋5を載置して治具(図示省
略)に固定された溶接前の当該半導体パツケージ
を、図aに示す矢印Aの方向に動かしながら、蓋
5の対向する長辺の二辺上に接触している一対の
溶接電極6間に例えば150アンペア程度の電流を
流すことによつて、シールフレーム4と蓋5との
間の前記接触点直下部分をジユール熱により前記
二辺の辺に沿つて連続的に溶融し、シールフレー
ム4と蓋5との長辺を溶接する。前記長辺の全て
を溶接した後、前記治具を90度回転し溶接電極6
の間隔を拡げ、図b図示のように当該半導体パツ
ケージを矢印Bの方向に動かして同様に短辺を溶
接する。 The seam welding method is as shown in Figure 2.
The lid 5 is placed on the seal frame 4 and the unwelded semiconductor package fixed to a jig (not shown) is moved in the direction of arrow A shown in FIG. By passing a current of, for example, about 150 amperes between the pair of welding electrodes 6 that are in contact with each other on the sides, the portion directly below the contact point between the seal frame 4 and the lid 5 is heated by Joule heat on the two sides. The long sides of the seal frame 4 and the lid 5 are welded by continuous melting along the sides. After welding all of the long sides, rotate the jig 90 degrees and attach the welding electrode 6.
Then, as shown in Figure b, move the semiconductor package in the direction of arrow B and weld the short sides in the same way.
上記シーム溶接において、従来の溶接電極6間
の通電方法は、第3図図示の如くで、溶接電極6
が蓋5に接触していない状態で図上右側にある当
該半導体パツケージを矢印A方向に移動し、溶接
電極6が蓋5に接触したところで通電を開始
(ON)し、溶接電極6が蓋5から離れる直前に
終了(OFF)している。 In the above seam welding, the conventional method of supplying electricity between the welding electrodes 6 is as shown in FIG.
The semiconductor package on the right side of the figure is moved in the direction of arrow A while the welding electrode 6 is not in contact with the lid 5, and when the welding electrode 6 comes into contact with the lid 5, energization is started (ON), and the welding electrode 6 is brought into contact with the lid 5. It is turned off (OFF) just before you leave the machine.
このシーム溶接方法においては、特に溶接電極
6間の通電開始の際、溶接電極6と蓋5との接触
が蓋5の角の点接触であるために、溶接電極6と
蓋5との間にスパークが発生して、第4図図示の
ように蓋5のみならずシールフレーム4の角部分
が飛散して欠け7が発生する場合がある。そして
この欠け7部分の溶接状態が不確実であるため、
当該半導体パツケージの気密性が不完全となる。
また、前記ジユール熱のパツケージ基体1内の熱
伝導によりパツケージ基体1が次第に温度上昇
し、前記長辺の長さが長い場合には該温度上昇が
大きくなつて、第5図図示のようにパツケージ基
体1に割れ8が発生することがある。このような
欠け7や割れ8の発生は、半導体装置の製造歩留
りおよび信頼性に悪影響を及ぼす問題となる。 In this seam welding method, since the contact between the welding electrode 6 and the lid 5 is point contact at the corner of the lid 5, especially when starting current flow between the welding electrodes 6, there is a gap between the welding electrode 6 and the lid 5. When sparks are generated, not only the lid 5 but also the corner portions of the seal frame 4 may be scattered, resulting in chipping 7, as shown in FIG. And since the welding condition of these 7 chipped parts is uncertain,
The hermeticity of the semiconductor package becomes incomplete.
Furthermore, the temperature of the package base 1 gradually rises due to heat conduction within the package base 1 of the Joule heat, and when the length of the long side is long, the temperature rise becomes large, and the package base 1 is heated as shown in FIG. Cracks 8 may occur in the base 1. The occurrence of such chips 7 and cracks 8 poses a problem that adversely affects the manufacturing yield and reliability of semiconductor devices.
(d) 発明の目的
本発明の目的は上記従来の問題に鑑み、半導体
パツケージ基体に取付けられた金属のシールフレ
ーム上に金属の蓋を載置し、該蓋の辺に溶接電極
を接触させ、該溶接電極と該半導体パツケージ基
体とを相対的に該辺の方向に移動させながら該溶
接電極に通電して、該シールフレームと該蓋との
シーム溶接を行うに際して、前記通電開始の際の
スパーク発生を抑制し、且つ前記パツケージ基体
の割れ発生を抑制することが可能なシーム溶接方
法を提供するにある。(d) Object of the Invention In view of the above-mentioned conventional problems, the object of the present invention is to place a metal lid on a metal seal frame attached to a semiconductor package base, bring a welding electrode into contact with the side of the lid, When performing seam welding between the seal frame and the lid by energizing the welding electrode while relatively moving the welding electrode and the semiconductor package base in the direction of the side, sparks are generated when the energization starts. It is an object of the present invention to provide a seam welding method capable of suppressing the occurrence of cracks and also suppressing the occurrence of cracks in the package base.
(e) 発明の構成
上記目的は、半導体パツケージ基体に取付けら
れた金属のシールフレーム上に金属の蓋を載置
し、該蓋の辺に溶接電極を接触させ、該溶接電極
と該半導体パツケージ基体とを相対的に該辺の方
向に移動させながら該溶接電極に通電して、該シ
ールフレームと該蓋とのシーム溶接を行うに際し
て、前記通電の開始を前記辺の中間で行う操作を
含むことを特徴とするシーム溶接方法によつて達
成される。(e) Structure of the Invention The above object is to place a metal lid on a metal seal frame attached to a semiconductor package base, bring a welding electrode into contact with the side of the lid, and connect the welding electrode to the semiconductor package base. and energizing the welding electrode while relatively moving the welding electrode in the direction of the side to perform seam welding between the seal frame and the lid, the step of starting the energization at the middle of the side. This is achieved by a seam welding method characterized by:
前記溶接電極間の通電開始の際の該溶接電極と
前記蓋との接触は、該蓋の辺上中間であるため、
従来例の角の場合と異なり安定しているので、ス
パークの発生を抑制することが可能になり、ま
た、前記操作により、溶接される辺が少なくとも
二つに分割され一回の溶接長さが短くなるので、
前記半導体パツケージ基体の温度上昇が小さくな
り該半導体パツケージ基体の割れ発生を抑制する
ことが可能になる。そして、前記操作が施された
辺については、複数回の溶接を組合せることによ
り、全長にわたる溶接が可能で、所望の完全な気
密性を確保した溶接が可能になる。 Since the contact between the welding electrode and the lid at the time of starting the current flow between the welding electrodes is in the middle on the side of the lid,
Unlike the conventional case of corners, it is stable, so it is possible to suppress the generation of sparks, and by the above operation, the side to be welded is divided into at least two parts, and the length of one weld is shortened. Because it will be shorter,
The rise in temperature of the semiconductor package base is reduced, making it possible to suppress the occurrence of cracks in the semiconductor package base. By combining a plurality of welding operations on the side to which the above operation has been performed, it is possible to weld the entire length, thereby making it possible to weld the desired complete airtightness.
(f) 発明の実施例
以下本発明の実施例を図により説明する。全図
を通じ同一符号は同一対象物を示す。(f) Embodiments of the invention Examples of the invention will be described below with reference to the drawings. The same reference numerals indicate the same objects throughout the figures.
第6図は第2図図示のシーム溶接の本発明によ
る方法の一実施例における溶接電極と半導体パツ
ケージとの配置を示す正面図、第7図はその溶接
順序を示す図、第8図は同じく他の実施例の溶接
順序を示す図で、Cは方向、〜は順序をそれ
ぞれ示す。 FIG. 6 is a front view showing the arrangement of the welding electrode and the semiconductor package in an embodiment of the seam welding method according to the invention shown in FIG. 2, FIG. 7 is a diagram showing the welding order, and FIG. 8 is the same. FIG. 3 is a diagram showing the welding order of another example, where C indicates the direction and ~ indicates the order, respectively.
第6図は従来の方法における第3図に対応する
図で、本発明による溶接電極6間の通電方法は、
図示の如くで、一組の辺の溶接を二段階に分割し
ている。即ち、第一段階は、当該半導体パツケー
ジを矢印A方向に移動し、溶接電極6が蓋5の辺
の略中央位置に来たところで通電を開始(ON)
し、溶接電極6が蓋5から離れる直前に終了
(OFF)している。続く第二段階は、当該半導体
パツケージを矢印C方向に移動し、溶接電極6が
先の通電開始(ON)点より若干手前に来たとこ
ろで再び通電を開始(ON)し、先と同様に蓋5
から離れる直前に終了(OFF)している。こう
することにより、通電開始(ON)点では、溶接
電極6と蓋5との接触は、蓋5の辺上中間である
ため、従来例の角の場合と異なり安定しているの
で、スパークの発生を抑制することが可能にな
り、然も、通電開始(ON)点での通電領域はオ
ーバラツプして、前記分割した二つの溶接は完全
に繋がつている。 FIG. 6 is a diagram corresponding to FIG. 3 in the conventional method, and the method of supplying current between welding electrodes 6 according to the present invention is as follows:
As shown in the figure, welding of one set of sides is divided into two stages. That is, in the first step, the semiconductor package is moved in the direction of arrow A, and when the welding electrode 6 comes to approximately the center position of the side of the lid 5, energization is started (ON).
However, the welding process ends (OFF) immediately before the welding electrode 6 leaves the lid 5. In the second step, the semiconductor package is moved in the direction of arrow C, and when the welding electrode 6 is slightly in front of the previous energization start (ON) point, energization is started again (ON), and the lid is closed in the same manner as before. 5
It is turned off (OFF) just before you leave the machine. By doing this, at the energization start point (ON), the contact between the welding electrode 6 and the lid 5 is at the middle of the side of the lid 5, so unlike the case of the corner of the conventional example, the contact between the welding electrode 6 and the lid 5 is stable, so there is no spark. This makes it possible to suppress the occurrence of welding, and the energization areas at the energization start (ON) point overlap, so that the two divided welds are completely connected.
更に、この方法によれば、一回の溶接長さが短
くなり、前記第一段階の通電終了(OFF)から
第二段階の通電開始(ON)までの間にパツケー
ジ基体1の温度が降下するので、パツケージ基体
1の温度上昇が従来の例より小さくなり、第5図
で示したパツケージ基体1の割れ8の発生を抑制
することが可能になる。 Furthermore, according to this method, the length of one welding is shortened, and the temperature of the package base 1 decreases between the end of energization in the first stage (OFF) and the start of energization in the second stage (ON). Therefore, the temperature rise in the package base 1 is smaller than in the conventional example, and it becomes possible to suppress the occurrence of cracks 8 in the package base 1 shown in FIG. 5.
第7図はこのシーム溶接方法を蓋5の長辺と短
辺に適用した場合の溶接順序を〜で示し、第
8図は同じく長辺のみに適用した場合の溶接順序
を〜で示している。第8図図示の方法は、長
辺の溶接の通電終了(OFF)時に溶接電極6と
蓋5との間の接触面が馴染むために、短辺端部で
通電開始(ON)してもスパークの発生が抑制さ
れること、および短辺においては溶接長さが短い
ことに依存しており、該馴染が少ない場合には第
7図図示の方法が望ましい。 Figure 7 shows the welding order when this seam welding method is applied to the long and short sides of the lid 5, and Figure 8 shows the welding order when applied only to the long sides. . In the method shown in Figure 8, the contact surface between the welding electrode 6 and the lid 5 becomes familiar when welding on the long side ends (OFF), so even if the welding starts (ON) on the short side, there is no spark. The method shown in FIG. 7 is preferable when the welding length is short on the short sides, and the welding length is short on the short sides.
本願の発明者は、第7図の方法によれば勿論の
こと、第8図の方法によつても、半導体装置にお
いて実用上充分な効果を得ることを確認した。 The inventor of the present application has confirmed that not only the method shown in FIG. 7 but also the method shown in FIG. 8 can provide a practically sufficient effect in semiconductor devices.
なお、パツケージ基体1の割れについては、上
記の通り一回の溶接長さを短くすることにより抑
制しているので、上記例のような二分割でも長過
ぎる場合には三分割以上にすればよく、その方法
も本発明に含まれる。 Note that cracks in the package base 1 are suppressed by shortening the length of one weld as described above, so if it is too long even if it is divided into two parts as in the example above, it is sufficient to divide it into three or more parts. , the method thereof is also included in the present invention.
(g) 発明の効果
以上に説明したように、本発明による構成によ
れば、半導体パツケージ基体に取付けられた金属
のシールフレーム上に金属の蓋を載置し、該蓋の
辺に溶接電極を接触させ、該溶接電極と該半導体
パツケージ基体とを相対的に該辺の方向に移動さ
せながら該溶接電極に通電して、該シールフレー
ムと該蓋とのシーム溶接を行うに際して、前記通
電開始の際のスパーク発生を抑制し、且つ前記パ
ツケージ基体の割れ発生を抑制することが可能な
シーム溶接方法を提供することが出来て、半導体
装置の製造歩留りおよび信頼性の向上を可能にさ
せる効果がある。(g) Effects of the Invention As explained above, according to the configuration of the present invention, a metal lid is placed on a metal seal frame attached to a semiconductor package base, and a welding electrode is attached to the side of the lid. When performing seam welding between the seal frame and the lid by energizing the welding electrode while moving the welding electrode and the semiconductor package base relatively in the direction of the side, It is possible to provide a seam welding method that can suppress the generation of sparks during the welding process and suppress the generation of cracks in the package base, and has the effect of making it possible to improve the manufacturing yield and reliability of semiconductor devices. .
第1図は半導体パツケージの一実施例の断面
図、第2図はその半導体パツケージにおけるシー
ム溶接を説明するための平面図a,b、第3図は
そのシーム溶接の従来の方法の実施例における溶
接電極と半導体パツケージとの配置を示す正面
図、第4図はその溶接で発生するシールフレーム
と蓋との欠けを示す図、第5図は同じくパツケー
ジ基体の割れを示す図、第6図は第2図図示のシ
ーム溶接の本発明による方法の一実施例における
溶接電極と半導体パツケージとの配置を示す正面
図、第7図はその溶接順序を示す図、第8図は同
じく他の実施例の溶接順序を示す図である。
図面において、1は半導体チツプ、2はリード
端子、3はパツケージ基体、4はシールフレー
ム、5は蓋、6は溶接電極、7は欠け、8は割
れ、A,B,Cは方向、〜は順序をそれぞれ
示す。
Fig. 1 is a sectional view of an embodiment of a semiconductor package, Fig. 2 is a plan view a, b for explaining seam welding in the semiconductor package, and Fig. 3 is an example of a conventional seam welding method. Figure 4 is a front view showing the arrangement of the welding electrode and semiconductor package, Figure 4 is a diagram showing a chip in the seal frame and lid that occurs during welding, Figure 5 is a diagram showing a crack in the package base, and Figure 6 is a diagram showing a crack in the package base. FIG. 2 is a front view showing the arrangement of the welding electrode and the semiconductor package in one embodiment of the seam welding method according to the present invention, FIG. 7 is a diagram showing the welding order, and FIG. 8 is another embodiment of the method. It is a figure showing the welding order of. In the drawings, 1 is a semiconductor chip, 2 is a lead terminal, 3 is a package base, 4 is a seal frame, 5 is a lid, 6 is a welding electrode, 7 is a chip, 8 is a crack, A, B, C are directions, ~ The order is shown respectively.
Claims (1)
シールフレーム上に金属の蓋を載置し、該蓋の辺
に溶接電極を接触させ、該溶接電極と該半導体パ
ツケージ基体とを相対的に該辺の方向に移動させ
ながら該溶接電極に通電して、該シールフレーム
と該蓋とのシーム溶接を行うに際して、前記通電
の開始を前記辺の中間で行う操作を含むことを特
徴とするシーム溶接方法。1. Place a metal lid on the metal seal frame attached to the semiconductor package base, bring a welding electrode into contact with the side of the lid, and align the welding electrode and the semiconductor package base relative to each other in the direction of the side. A seam welding method comprising the step of energizing the welding electrode while moving the welding electrode to perform seam welding between the seal frame and the lid, and starting the energization at the middle of the sides.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59005888A JPS60149152A (en) | 1984-01-17 | 1984-01-17 | Seam welding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59005888A JPS60149152A (en) | 1984-01-17 | 1984-01-17 | Seam welding method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60149152A JPS60149152A (en) | 1985-08-06 |
JPH0439778B2 true JPH0439778B2 (en) | 1992-06-30 |
Family
ID=11623426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59005888A Granted JPS60149152A (en) | 1984-01-17 | 1984-01-17 | Seam welding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60149152A (en) |
-
1984
- 1984-01-17 JP JP59005888A patent/JPS60149152A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60149152A (en) | 1985-08-06 |
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