KR100198993B1 - Packaging process and package apparatus of semiconductor - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a disk-type semiconductor package process used for a large-capacity power device, wherein a semiconductor chip and a package case are mounted on an anode electrode and a cathode electrode is mounted on the package case, and the anode electrode And a welding surface between the package case and a welding surface between the cathode electrode and the package case, wherein the welding surface of the semiconductor package is positioned between a plurality of supports having cutting edges. And aligning the semiconductor package by applying a predetermined pressure to the support while rotating the semiconductor package, and simultaneously removing contaminants formed on the welding surface.

Therefore, the present invention has the effect of simplifying the packaging process and improving the reliability of the semiconductor package because the semiconductor package process is carried out at the same time to remove the contaminants such as the alignment of the semiconductor package and the oxide film of the welding surface.

Description

Semiconductor package process and package device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor packaging process and a packaging apparatus, and more particularly, to a semiconductor packaging process and a packaging apparatus applied to a large capacity semiconductor device used for driving high power.

The external structure of the package of the semiconductor device is various in consideration of convenience in the circuit and device configuration, heat dissipation characteristics, and the like. The heat dissipation characteristics are limited according to the external structure so that the rated current is limited. Generally, a plastic mold type is used for devices of class 30A or less, but a stud type or disc type having a cross-sectional structure as shown in FIG. 1 is used for a high power semiconductor device of class 70A or more.

On the other hand, the silicon chip to be packaged is a molten alloy or brazing bonding using an aluminum-silicon alloy on a thermal stress compensation plate made of molybdenum or molybdenum-tungsten alloy.

For reference, in the case of the thyristors, for example, the stud type is attached to the terminal line is ultrasonically welded or soldered on the gate surface in the center of the upper surface of the silicon chip. When the thyristor is in operation, since the internal temperature increases a lot, silicone rubber is used as the insulating coating material. In addition, the portion where the gate terminal exits is sealed with a glass encapsulation material having excellent insulation. Therefore, as the terminal material, a material such as tungsten having excellent electrical conductivity and excellent bonding property with glass is used. Nickel-plated molybdenum plate is placed on the cathode surface and pressed with springs, or if the cathode pattern is not complicated, it is attached by brazing or high temperature soldering. However, as the current capacity increases, the cathode pattern becomes complicated to improve switching time and voltage rise rate characteristics, and thus it is difficult to attach with solder or the like. In addition, when the electrode area is large, it is advantageous to adhere by a crimping method rather than bonding the cathode because of the thermal stress between the silicon and the electrode material. Therefore, in such a structure, since the heat dissipation characteristics are limited since the heat dissipation is limited to the anode direction, there is a problem of being limited to a rated current of about 400 A at maximum.

Disk-type packages cannot be mounted in single-sided heat dissipation structures such as studs for high-voltage, high-capacity chips. Therefore, the silicon chip is mounted in the double-sided heat dissipation structure as in the cross-sectional structure of FIG. 1. This structure has excellent heat dissipation characteristics, so it is applied to several kV and several kA class. This structure is almost the same as the stud structure, but there are two cases in which the cathode side is press-bonded and the anode side is welded, and both the anode and the cathode are welded.

On the other hand, in the disc-shaped package, the gate is pressed with a spring and the terminal is forced out of the magnetic insulator face. In particular, the gate terminal at the point passing through the insulated pipe is made into a tube so that after the final assembly, the inside of the tube can be vacuumed to fill and seal the insulating gas.

Since the disk-type package as described above is applied to a system for driving a large power, it is very important to be manufactured reliably. The disk-type package has a double-sided heat sink structure, which can be usefully applied to large power devices. However, the disk-type package is more complicated and has many parts used than the small-capacity package structure. The stability of the process is a very important factor from the preparation of the material to the final sealing process of material alignment and welding or pressing.

On the other hand, as shown in Figure 2, the semiconductor package device used in the welding process, the sample setting chuck 38, the sample position alignment lever 42, the sample fixing jig 40, the welding tip (not shown) inside the chamber ) And chamber inlet cover (not shown). Outside the chamber are connected additional devices (not shown), such as an argon gas for arc welding and a pumping system to control the pressure inside the chamber. The sample position alignment lever 42 has three levers arranged in an equilateral triangle around the sample, and at the end of each lever, a welding surface 34 of a sample having a self-rotating ring 44 fixed on the sample setting chuck 38. It is able to move from side to side to allow contact and non-contact. Therefore, when the lever is contacted and the sample is rotated, the sample position alignment lever 42 supports the welding surface 34 so that the sample is in the center of the sample setting chuck 38. Aligned correctly. After the sample is aligned, the sample holding jig 40 is pressed at the upper part of the sample to a certain pressure so that the sample is completely fixed, and then evenly adjusted between the surfaces to be manually welded and the welding surface to remove the oxide film using a file. Grind slightly (34). Subsequently, the chamber inlet cover is closed and the pumping system is operated to adjust the pressure in the chamber, and then argon arc welding is performed while setting the welding tip to the welding surface 34 at a predetermined interval and rotating the sample setting chuck 38.

However, in carrying out the general welding process as described above, the conventional self-rotating ring 46 as shown in FIG. 3 supports the welding surface 34 while simply rotating at the end of the sample position alignment lever 42. Since only the alignment process can be performed, the process sequence before arc welding is performed, and the uniformity between the ceramic case and the anode and cathode electrodes of FIG. 1 is increased, and the welding efficiency is increased by oxidation of the welding surface 34. There was a problem in that an inefficient process of changing the welding surface 34 by using a stripe was added.

SUMMARY OF THE INVENTION An object of the present invention is to provide a package process that can achieve process stabilization by improving the weld efficiency by simultaneously performing a process such as adjusting the position of a sample, uniformizing the welding surface, and removing contaminants or oxides generated during the process in the package welding process. There is.

Another object of the present invention is to improve the structure of the self-rotating ring attached to the end of the sample position alignment lever in the package welding device to simultaneously remove the uniform contact state of the welding surface and the oxide film of the welding surface at the same time as the sample position alignment. To provide a package device.

The packaging process of the present invention for achieving the above object, the semiconductor package formed by mounting a semiconductor chip and a package case on the anode electrode and the cathode electrode on the package case and the alignment between the anode electrode and the package case A semiconductor package process comprising welding a welding surface and a welding surface between the cathode electrode and the package case, wherein the welding surface of the semiconductor package is positioned between a plurality of supports having cutting edges, and the semiconductor package is rotated while And applying a predetermined pressure to a support to align the semiconductor package and removing contaminants formed on the welding surface.

According to another aspect of the present invention, there is provided a semiconductor package device including a rotatable sample setting chuck having a semiconductor package loaded thereon, and a rotatable sample applying a predetermined pressure downward to an upper portion of the semiconductor package loaded on the sample setting chuck. A fixing jig, a self-rotating ring for supporting the welding surface of the semiconductor package loaded on the sample setting chuck, and a sample position alignment lever for supporting the self-rotating ring and applying a predetermined pressure in the direction of the welding surface of the semiconductor package. In the configured semiconductor package device, a groove is formed around the self-rotating ring, characterized in that the cutting edge is formed in the groove.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a cross-sectional structure of a disc type semiconductor package.

FIG. 2 is a schematic view showing a semiconductor package device used in the welding process of a disk-type semiconductor package. FIG.

3 is a view showing a structure of a self-rotating ring used in the semiconductor package device of FIG.

4 is a view showing a structure of a self-rotating ring according to the present invention.

Explanation of symbols for the main parts of the drawings

10 anode electrode 12 copper plate

14 steel plate 16: semiconductor chip

18: gate electrode 20: gate electrode buffer spring

22: gate electrode isolation Teflon ring 24: gate lead wire

26 ceramic case 28 gate electrode alignment cathode electrode

30 cathode electrode 32 teflon ring

34: welding surface 36: chamber

38: sample setting chuck 40: sample fixing jig

42: sample position alignment lever 44, 46, 50: self-rotating ring

48: ring support 52: cutting edge

54: cutting edge support

Hereinafter, with reference to the accompanying drawings showing a specific embodiment of the present invention will be described in more detail.

Referring to Figure 4, a groove is formed around the self-rotating ring 50 used in the packaging device of the present invention, the groove is a cutting edge of the form of a diamond shape having a size corresponding to the welding surface 34 of the semiconductor package 52 is inserted. The cutting edge 52 is fixedly supported by the cutting edge support 54 and receives a predetermined pressure from the cutting edge support 54 toward the welding surface 34 of the semiconductor package.

In the semiconductor package apparatus equipped with the self-rotating ring 52 configured as described above, the order in which the disk-type semiconductor package is aligned and welded will be described below.

First, as shown in FIG. 1, the semiconductor package formed by mounting the semiconductor chip 16 on the anode electrode 10 and the ceramic case 26 and the cathode electrode 30 is used for a subsequent welding process. It moves to the semiconductor package apparatus of FIG.

As shown in FIG. 2, the semiconductor package is mounted on the sample setting chuck 38 and the welding surface 34 of the semiconductor package is mounted on the end of the sample position fixing lever 42 disposed in a regular triangle shape. The rotary ring 44 is inserted into and supported by the cutting blade 52 made of high speed steel, and the sample fixing jig 40 supports the semiconductor package while applying a constant pressure downward to the upper portion of the semiconductor package.

After the semiconductor package is mounted on the semiconductor package device as described above, the sample setting chuck 38 and the sample fixing jig 40 are rotated and the semiconductor is rotated to the self-rotating ring 44 through the sample positioning lever 42. Alignment of the semiconductor package proceeds while applying a predetermined pressure toward the welding surface 34 of the package. At this time, the welding surface 34 of the semiconductor package is inserted into the inside of the cutting blade 52 in the form of a recess shown in FIG. 4 and rotated while being subjected to a predetermined pressure through the sample positioning lever 42 as described above. While the anode electrode 10 of the package, the ceramic case 26 and the cathode electrode 30 are aligned, contaminants such as an oxide film formed on the surface of the welding surface 34 are removed by the cutting edge 52.

As described above, the semiconductor package in which the contaminants of the welding surface 34 are removed is rotated while the welding process is performed along the welding surface 34 to finish the semiconductor package process.

Therefore, the present invention has the effect of simplifying the packaging process and improving the reliability of the semiconductor package because the semiconductor package process is carried out at the same time to remove the contaminants such as the alignment of the semiconductor package and the oxide film of the welding surface.

Claims (2)

Arrange the semiconductor package formed by mounting the semiconductor chip and the package case on the anode electrode and the cathode electrode on the package case, the welding surface between the anode electrode and the package case and the well between the cathode electrode and the package case A semiconductor package process comprising welding a bonding surface, wherein the welding surface of the semiconductor package is positioned between a plurality of supports having a cutting edge, and the semiconductor package is aligned by applying a predetermined pressure to the support while rotating the semiconductor package. And at the same time removing the contaminants formed on the welding surface. A rotatable sample setting chuck having a semiconductor package loaded thereon, a rotatable sample holding jig for applying a predetermined pressure downwardly to an upper portion of the semiconductor package loaded on the sample setting chuck, and a semiconductor package loaded above the sample setting chuck A semiconductor package device comprising a self-rotating ring for supporting a welding surface and a sample position alignment lever for supporting the self-rotating ring and applying a predetermined pressure in the direction of the welding surface of the semiconductor package, wherein the recess is formed around the self-rotating ring. And a cutting edge is formed in the groove.