KR100198993B1 - 반도체 패키지공정 및 패키지장치 - Google Patents
반도체 패키지공정 및 패키지장치 Download PDFInfo
- Publication number
- KR100198993B1 KR100198993B1 KR1019960053530A KR19960053530A KR100198993B1 KR 100198993 B1 KR100198993 B1 KR 100198993B1 KR 1019960053530 A KR1019960053530 A KR 1019960053530A KR 19960053530 A KR19960053530 A KR 19960053530A KR 100198993 B1 KR100198993 B1 KR 100198993B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor package
- package
- welding surface
- semiconductor
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000012858 packaging process Methods 0.000 title abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- 239000000356 contaminant Substances 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (2)
- 애노드전극 상부에 반도체칩과 패키지 케이스를 탑재하고 상기 패키지 케이스 상부에 캐소드전극을 탑재하여 형성된 반도체 패키지를 정렬하고 상기 애노드전극과 상기 패키지 케이스 사이의 웰딩면 및 상기 캐소드전극과 상기 패키지 케이스 사이의 웰딩면을 웰딩하여 이루어지는 반도체 패키지공정에 있어서, 절삭날이 형성된 복수개의 지지대 사이에 상기 반도체 패키지의 상기 웰딩면을 위치시키고 상기 반도체 패키지를 회전시키면서 상기 지지대에 소정의 압력을 가하여 상기 반도체 패키지를 정렬시키는 동시에 상기 웰딩면의 형성된 오염물질을 제거하는 공정을 포함하는 것을 특징으로 반도체 패키지공정.
- 상부에 반도체 패키지가 적재되는 회전 가능한 샘플 세팅척과, 상기 샘플 세팅척 상부에 적재되는 반도체 패키지 상부에 하방으로 소정의 압력을 가하는 회전 가능한 샘플 고정지그와, 상기 샘플 세팅척 상부에 적재되는 반도체 패키지의 웰딩면을 지지하는 자체회전링과, 상기 자체회전링을 지지하며 상기 반도체 패키지의 웰딩면 방향으로 소정의 압력을 가하는 샘플위치 정렬레버로 구성된 반도체 패키지장치에 있어서, 상기 자체회전링의 둘레에는 요홈이 형성되어 있으며 상기 요홈에는 절삭날이 형성되어 있는 것을 특징으로 하는 반도체 패키지장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960053530A KR100198993B1 (ko) | 1996-11-12 | 1996-11-12 | 반도체 패키지공정 및 패키지장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960053530A KR100198993B1 (ko) | 1996-11-12 | 1996-11-12 | 반도체 패키지공정 및 패키지장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980035250A KR19980035250A (ko) | 1998-08-05 |
KR100198993B1 true KR100198993B1 (ko) | 1999-06-15 |
Family
ID=19481605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960053530A Expired - Fee Related KR100198993B1 (ko) | 1996-11-12 | 1996-11-12 | 반도체 패키지공정 및 패키지장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100198993B1 (ko) |
-
1996
- 1996-11-12 KR KR1019960053530A patent/KR100198993B1/ko not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19980035250A (ko) | 1998-08-05 |
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19961112 |
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