JPH04372900A - Manufacture of radioactive ray image converting - Google Patents
Manufacture of radioactive ray image convertingInfo
- Publication number
- JPH04372900A JPH04372900A JP17572091A JP17572091A JPH04372900A JP H04372900 A JPH04372900 A JP H04372900A JP 17572091 A JP17572091 A JP 17572091A JP 17572091 A JP17572091 A JP 17572091A JP H04372900 A JPH04372900 A JP H04372900A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- stimulable phosphor
- filter
- activator
- phosphor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000002285 radioactive effect Effects 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 claims abstract description 50
- 239000000843 powder Substances 0.000 claims abstract description 33
- 239000012190 activator Substances 0.000 claims abstract description 31
- 239000012298 atmosphere Substances 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 77
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000011159 matrix material Substances 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 24
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 abstract description 22
- 230000007547 defect Effects 0.000 abstract description 16
- 239000011148 porous material Substances 0.000 abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 230000004936 stimulating effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 90
- 150000001875 compounds Chemical class 0.000 description 23
- 239000000758 substrate Substances 0.000 description 21
- 239000011241 protective layer Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000002585 base Substances 0.000 description 10
- 230000005284 excitation Effects 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 10
- -1 polyethylene terephthalate Polymers 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 3
- MYLBTCQBKAKUTJ-UHFFFAOYSA-N 7-methyl-6,8-bis(methylsulfanyl)pyrrolo[1,2-a]pyrazine Chemical compound C1=CN=CC2=C(SC)C(C)=C(SC)N21 MYLBTCQBKAKUTJ-UHFFFAOYSA-N 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910001620 barium bromide Inorganic materials 0.000 description 2
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 239000005345 chemically strengthened glass Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- PVEVRIVGNKNWML-UHFFFAOYSA-K praseodymium(3+);triiodide Chemical compound I[Pr](I)I PVEVRIVGNKNWML-UHFFFAOYSA-K 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 2
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 2
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- 101100274801 Caenorhabditis elegans dyf-3 gene Proteins 0.000 description 1
- 101100348958 Caenorhabditis elegans smf-3 gene Proteins 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- 229910004573 CdF 2 Inorganic materials 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910004664 Cerium(III) chloride Inorganic materials 0.000 description 1
- 229910008069 Cerium(III) iodide Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- 229910016644 EuCl3 Inorganic materials 0.000 description 1
- 229910016653 EuF3 Inorganic materials 0.000 description 1
- 229910005258 GaBr3 Inorganic materials 0.000 description 1
- 229910005267 GaCl3 Inorganic materials 0.000 description 1
- 229910005270 GaF3 Inorganic materials 0.000 description 1
- 229910003317 GdCl3 Inorganic materials 0.000 description 1
- 229910005693 GdF3 Inorganic materials 0.000 description 1
- 229910021620 Indium(III) fluoride Inorganic materials 0.000 description 1
- 229910021621 Indium(III) iodide Inorganic materials 0.000 description 1
- 229910002249 LaCl3 Inorganic materials 0.000 description 1
- 229910002319 LaF3 Inorganic materials 0.000 description 1
- 229910016859 Lanthanum iodide Inorganic materials 0.000 description 1
- 229910014323 Lanthanum(III) bromide Inorganic materials 0.000 description 1
- 229910013482 LuF3 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910017557 NdF3 Inorganic materials 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910021588 Nickel(II) iodide Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910019322 PrF3 Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910018057 ScCl3 Inorganic materials 0.000 description 1
- 229910018096 ScF3 Inorganic materials 0.000 description 1
- 229910018094 ScI3 Inorganic materials 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910021175 SmF3 Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 229910004302 TbI3 Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910008903 TmF3 Inorganic materials 0.000 description 1
- 101000929049 Xenopus tropicalis Derriere protein Proteins 0.000 description 1
- 229910009523 YCl3 Inorganic materials 0.000 description 1
- 229910009527 YF3 Inorganic materials 0.000 description 1
- 229910009520 YbF3 Inorganic materials 0.000 description 1
- 229910009535 YbI3 Inorganic materials 0.000 description 1
- 229910021601 Yttrium(III) bromide Inorganic materials 0.000 description 1
- 229910021602 Yttrium(III) iodide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910001638 barium iodide Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910001621 beryllium bromide Inorganic materials 0.000 description 1
- PBKYCFJFZMEFRS-UHFFFAOYSA-L beryllium bromide Chemical compound [Be+2].[Br-].[Br-] PBKYCFJFZMEFRS-UHFFFAOYSA-L 0.000 description 1
- 229910001627 beryllium chloride Inorganic materials 0.000 description 1
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 description 1
- JZKFIPKXQBZXMW-UHFFFAOYSA-L beryllium difluoride Chemical compound F[Be]F JZKFIPKXQBZXMW-UHFFFAOYSA-L 0.000 description 1
- 229910001633 beryllium fluoride Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- ZEDZJUDTPVFRNB-UHFFFAOYSA-K cerium(3+);triiodide Chemical compound I[Ce](I)I ZEDZJUDTPVFRNB-UHFFFAOYSA-K 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- RZQFCZYXPRKMTP-UHFFFAOYSA-K dysprosium(3+);triiodide Chemical compound [I-].[I-].[I-].[Dy+3] RZQFCZYXPRKMTP-UHFFFAOYSA-K 0.000 description 1
- BOXVSFHSLKQLNZ-UHFFFAOYSA-K dysprosium(iii) chloride Chemical compound Cl[Dy](Cl)Cl BOXVSFHSLKQLNZ-UHFFFAOYSA-K 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OKVQKDALNLHZLB-UHFFFAOYSA-K erbium(3+);triiodide Chemical compound I[Er](I)I OKVQKDALNLHZLB-UHFFFAOYSA-K 0.000 description 1
- HDGGAKOVUDZYES-UHFFFAOYSA-K erbium(iii) chloride Chemical compound Cl[Er](Cl)Cl HDGGAKOVUDZYES-UHFFFAOYSA-K 0.000 description 1
- NNMXSTWQJRPBJZ-UHFFFAOYSA-K europium(iii) chloride Chemical compound Cl[Eu](Cl)Cl NNMXSTWQJRPBJZ-UHFFFAOYSA-K 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- MEANOSLIBWSCIT-UHFFFAOYSA-K gadolinium trichloride Chemical compound Cl[Gd](Cl)Cl MEANOSLIBWSCIT-UHFFFAOYSA-K 0.000 description 1
- IZZTUGMCLUGNPM-UHFFFAOYSA-K gadolinium(3+);triiodide Chemical compound I[Gd](I)I IZZTUGMCLUGNPM-UHFFFAOYSA-K 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KXCRAPCRWWGWIW-UHFFFAOYSA-K holmium(3+);triiodide Chemical compound I[Ho](I)I KXCRAPCRWWGWIW-UHFFFAOYSA-K 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- KYKBXWMMXCGRBA-UHFFFAOYSA-K lanthanum(3+);triiodide Chemical compound I[La](I)I KYKBXWMMXCGRBA-UHFFFAOYSA-K 0.000 description 1
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 1
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Inorganic materials [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 1
- DWHGOINJUKABSY-UHFFFAOYSA-K lutetium(3+);tribromide Chemical compound [Br-].[Br-].[Br-].[Lu+3] DWHGOINJUKABSY-UHFFFAOYSA-K 0.000 description 1
- AEDROEGYZIARPU-UHFFFAOYSA-K lutetium(iii) chloride Chemical compound Cl[Lu](Cl)Cl AEDROEGYZIARPU-UHFFFAOYSA-K 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- SNMVRZFUUCLYTO-UHFFFAOYSA-N n-propyl chloride Chemical compound CCCCl SNMVRZFUUCLYTO-UHFFFAOYSA-N 0.000 description 1
- LBWLQVSRPJHLEY-UHFFFAOYSA-K neodymium(3+);tribromide Chemical compound Br[Nd](Br)Br LBWLQVSRPJHLEY-UHFFFAOYSA-K 0.000 description 1
- DKSXWSAKLYQPQE-UHFFFAOYSA-K neodymium(3+);triiodide Chemical compound I[Nd](I)I DKSXWSAKLYQPQE-UHFFFAOYSA-K 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- BFSQJYRFLQUZKX-UHFFFAOYSA-L nickel(ii) iodide Chemical compound I[Ni]I BFSQJYRFLQUZKX-UHFFFAOYSA-L 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000005026 oriented polypropylene Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Inorganic materials [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 1
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Inorganic materials [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- OEKDNFRQVZLFBZ-UHFFFAOYSA-K scandium fluoride Chemical compound F[Sc](F)F OEKDNFRQVZLFBZ-UHFFFAOYSA-K 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910001625 strontium bromide Inorganic materials 0.000 description 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001643 strontium iodide Inorganic materials 0.000 description 1
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 description 1
- GFISHBQNVWAVFU-UHFFFAOYSA-K terbium(iii) chloride Chemical compound Cl[Tb](Cl)Cl GFISHBQNVWAVFU-UHFFFAOYSA-K 0.000 description 1
- OJXRJPFRTRETRN-UHFFFAOYSA-K terbium(iii) iodide Chemical compound I[Tb](I)I OJXRJPFRTRETRN-UHFFFAOYSA-K 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- HQSWGSFQSCMHFQ-UHFFFAOYSA-K thulium(3+);tribromide Chemical compound [Br-].[Br-].[Br-].[Tm+3] HQSWGSFQSCMHFQ-UHFFFAOYSA-K 0.000 description 1
- LZOMHYVAEHYDST-UHFFFAOYSA-K thulium(3+);triiodide Chemical compound I[Tm](I)I LZOMHYVAEHYDST-UHFFFAOYSA-K 0.000 description 1
- JNLSTWIBJFIVHZ-UHFFFAOYSA-K trifluoroindigane Chemical compound F[In](F)F JNLSTWIBJFIVHZ-UHFFFAOYSA-K 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- CKLHRQNQYIJFFX-UHFFFAOYSA-K ytterbium(III) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Yb+3] CKLHRQNQYIJFFX-UHFFFAOYSA-K 0.000 description 1
- QNLXXQBCQYDKHD-UHFFFAOYSA-K ytterbium(iii) bromide Chemical compound Br[Yb](Br)Br QNLXXQBCQYDKHD-UHFFFAOYSA-K 0.000 description 1
- PCMOZDDGXKIOLL-UHFFFAOYSA-K yttrium chloride Chemical compound [Cl-].[Cl-].[Cl-].[Y+3] PCMOZDDGXKIOLL-UHFFFAOYSA-K 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Conversion Of X-Rays Into Visible Images (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、輝尽性蛍光体層または
その母体層を形成した後、これを付活剤を含有する粉末
の存在下で熱処理する工程を含む放射線画像変換パネル
の製造方法に関する。[Industrial Application Field] The present invention relates to the production of a radiation image conversion panel, which includes the step of forming a stimulable phosphor layer or its base layer and then heat-treating it in the presence of powder containing an activator. Regarding the method.
【0002】0002
【従来の技術】例えば医療の分野においては、病気の診
断にX線画像のような放射線画像が多く用いられている
。かかる放射線画像の形成方法としては、従来、被写体
を透過したX線を蛍光体層(蛍光スクリーン)に照射し
、これにより可視光を生じさせてこの可視光を通常の写
真を撮るときと同じように、銀塩を使用したフィルムに
照射して現像する、いわゆる放射線写真法が一般的であ
った。2. Description of the Related Art For example, in the medical field, radiographic images such as X-ray images are often used to diagnose diseases. The conventional method for forming such radiographic images is to irradiate X-rays that have passed through the subject onto a phosphor layer (phosphor screen), thereby generating visible light, which is then used in the same way as when taking ordinary photographs. In addition, the so-called radiographic method, in which a film using a silver salt is irradiated and developed, was common.
【0003】しかるに、近年、銀塩を塗布したフィルム
を使用しないで蛍光体層から直接画像を取り出す方法と
して、被写体を透過した放射線を蛍光体に吸収させ、し
かる後この蛍光体を例えば光または熱エネルギーで励起
することにより、この蛍光体に吸収されて蓄積されてい
た放射線エネルギーを蛍光として放射させ、この蛍光を
検出して画像化する方法が提案されている。However, in recent years, as a method for directly taking out an image from a phosphor layer without using a film coated with silver salt, radiation transmitted through an object is absorbed by a phosphor, and then this phosphor is exposed to light or heat, for example. A method has been proposed in which the radiation energy absorbed and accumulated in this phosphor is emitted as fluorescence by exciting it with energy, and this fluorescence is detected and imaged.
【0004】例えば米国特許第3,859,527号明
細書、特開昭55−12144号公報には、輝尽性蛍光
体を用い、可視光線または赤外線を輝尽励起光として用
いた放射線画像変換方法が示されている。この方法は、
基板上に輝尽性蛍光体層を形成した放射線画像変換パネ
ルを使用するものであり、この放射線画像変換パネルの
輝尽性蛍光体層に被写体を透過した放射線を当てて、被
写体の各部の放射線透過度に対応する放射線エネルギー
を蓄積させて潜像を形成し、しかる後にこの輝尽性蛍光
体層を輝尽励起光で走査することによって各部に蓄積さ
れた放射線エネルギーを輝尽発光として放射させ、この
光の強弱による光信号を例えば光電変換し、画像再生装
置により画像化するものである。この最終的な画像はハ
ードコピーとして再生されるか、またはCRT上に再生
される。For example, US Pat. No. 3,859,527 and Japanese Unexamined Patent Publication No. 12144/1987 disclose radiation image conversion using a stimulable phosphor and using visible light or infrared rays as stimulable excitation light. A method is shown. This method is
This uses a radiation image conversion panel in which a stimulable phosphor layer is formed on a substrate, and the radiation transmitted through the object is applied to the stimulable phosphor layer of this radiation image conversion panel to detect the radiation of each part of the object. Radiation energy corresponding to the transmittance is accumulated to form a latent image, and then this photostimulable phosphor layer is scanned with photostimulation excitation light to emit the radiation energy accumulated in each part as stimulated luminescence. For example, an optical signal based on the intensity of this light is photoelectrically converted and converted into an image by an image reproducing device. This final image can be reproduced as a hard copy or reproduced on a CRT.
【0005】この放射線画像変換方法に用いられる輝尽
性蛍光体層を有する放射線画像変換パネルとして、特開
昭61−73100号公報には輝尽性蛍光体層に結着剤
を含有しない放射線画像変換パネルが提案されている。
また、このような結着剤を含有しない輝尽性蛍光体層を
有する放射線画像変換パネルの製造においては、、従来
、基板上に輝尽性蛍光体層またはその母体層を形成した
後、これを付活剤を含有する粉末の存在下で熱処理する
ことが行われている(特願昭62−175381号、同
62−175382号明細書参照)。[0005] As a radiation image conversion panel having a stimulable phosphor layer used in this radiation image conversion method, JP-A-61-73100 discloses a radiation image conversion panel having a stimulable phosphor layer that does not contain a binder in the stimulable phosphor layer. A conversion panel is proposed. In addition, in manufacturing a radiation image conversion panel having a stimulable phosphor layer that does not contain such a binder, conventionally, after forming a stimulable phosphor layer or its base layer on a substrate, heat treatment in the presence of powder containing an activator (see Japanese Patent Application Nos. 175381/1981 and 175382/1982).
【0006】[0006]
【発明が解決しようとする課題】しかし、上記の従来の
技術では、付活剤を含有する粉末を用いて熱処理した場
合、付活剤の粉末が突沸や気流により輝尽性蛍光体層ま
たはその母体層の表面に付着し、その部分は局所的に高
濃度の付活剤が添加されるため感度が低下し、画像欠陥
となる。そこで、本発明の目的は、画像欠陥の少ない放
射線画像変換パネルを製造することができる方法を提供
することにある。[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, when a powder containing an activator is heat-treated, the activator powder is damaged by bumping or air currents in the stimulable phosphor layer or its surroundings. It adheres to the surface of the base layer, and since a high concentration of activator is added locally to that part, sensitivity decreases and image defects occur. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a radiation image conversion panel with fewer image defects.
【0007】[0007]
【課題を解決するための手段】以上の目的を達成するた
め、本発明においては、輝尽性蛍光体層またはその母体
層を形成した後、これを付活剤を含有する粉末の存在下
で熱処理する工程を含む放射線画像変換パネルの製造方
法において、付活剤を含有する粉末が配置された雰囲気
と、輝尽性蛍光体層またはその母体層が配置された雰囲
気とを仕切るフィルターを設けて熱処理することを特徴
とする。[Means for Solving the Problems] In order to achieve the above object, in the present invention, after forming a stimulable phosphor layer or its base layer, this is coated in the presence of a powder containing an activator. In a method for manufacturing a radiation image conversion panel including a heat treatment step, a filter is provided to separate an atmosphere in which a powder containing an activator is placed and an atmosphere in which a stimulable phosphor layer or its matrix layer is placed. It is characterized by being heat treated.
【0008】[0008]
【作用】付活剤を含有する粉末が配置された雰囲気と、
輝尽性蛍光体層またはその母体層が配置された雰囲気と
を仕切るフィルターを設けて熱処理するので、付活剤の
突沸による画像欠陥の発生が有効に防止される。[Action] An atmosphere in which powder containing an activator is placed,
Since the heat treatment is performed using a filter that separates the stimulable phosphor layer from the atmosphere in which the stimulable phosphor layer or its base layer is placed, image defects due to bumping of the activator can be effectively prevented.
【0009】以下、本発明を具体的に説明する。本発明
においては、輝尽性蛍光体層またはその母体層を形成し
た後、これを付活剤を含有する粉末の存在下で熱処理す
る工程において、付活剤を含有する粉末が配置された雰
囲気と、輝尽性蛍光体層またはその母体層が配置された
雰囲気とを仕切るフィルターを設けて熱処理を行う。The present invention will be specifically explained below. In the present invention, in the step of forming a stimulable phosphor layer or its base layer and then heat-treating it in the presence of a powder containing an activator, an atmosphere in which the powder containing an activator is placed is used. The heat treatment is performed by providing a filter that partitions the stimulable phosphor layer or the atmosphere in which the stimulable phosphor layer or its matrix layer is placed.
【0010】図1〜図5にフィルターの配置例を示す。
これらの図において、1は熱処理容器、2は輝尽性蛍光
体層またはその母体層、3は基板、4は付活剤を含有す
る粉末、5はフィルター、8はヒーターである。付活剤
を含有する粉末とは、例えば輝尽性蛍光体層またはその
母体層がそれぞれRbBr:Tl蛍光体またはその母体
である場合は、RbBr:Tl蛍光体粉末、RbBrと
TlBrの混合粉末、あるいはTlBr粉末等をいう。
図1では、熱処理容器1の内部を中央に配置したフィル
ター5により左右の2つの室に分割し、一方の室の上部
側に輝尽性蛍光体層またはその母体層2を水平となる姿
勢で配置し、他方の室の下部側に付活剤を含有する粉末
4を配置している。図2では、熱処理容器1の下部側に
付活剤を含有する粉末4を配置し、その上部にフィルタ
ー5を重ねて配置して熱処理容器1の内部を上下の2つ
の室に分割し、上部側の室には輝尽性蛍光体層またはそ
の母体層2を水平となる姿勢に配置している。輝尽性蛍
光体層またはその母体層2は、基板3の付活剤を含有す
る粉末4と対向する面側に設けられている。Examples of the arrangement of filters are shown in FIGS. 1 to 5. In these figures, 1 is a heat treatment container, 2 is a stimulable phosphor layer or its matrix layer, 3 is a substrate, 4 is a powder containing an activator, 5 is a filter, and 8 is a heater. The powder containing an activator is, for example, when the stimulable phosphor layer or its matrix layer is an RbBr:Tl phosphor or its matrix, RbBr:Tl phosphor powder, a mixed powder of RbBr and TlBr, Alternatively, it refers to TlBr powder, etc. In FIG. 1, the inside of a heat treatment container 1 is divided into two chambers, left and right, by a filter 5 placed in the center, and a stimulable phosphor layer or its matrix layer 2 is placed in a horizontal position on the upper side of one chamber. Powder 4 containing an activator is placed on the lower side of the other chamber. In FIG. 2, a powder 4 containing an activator is placed on the lower side of a heat treatment container 1, a filter 5 is placed on top of the powder 4, and the inside of the heat treatment container 1 is divided into two upper and lower chambers. In the side chamber, the stimulable phosphor layer or its matrix layer 2 is arranged in a horizontal position. The stimulable phosphor layer or its matrix layer 2 is provided on the side of the substrate 3 facing the powder 4 containing the activator.
【0011】図3では、輝尽性蛍光体層またはその母体
層2を垂直となる姿勢で配置したほかは図1と同様に構
成されている。図4では、熱処理容器1を完全に分離し
た2つの室1A,1Bにより形成し、両者の間に連通路
6を設け、一方の室1Aの下部側に付活剤を含有する粉
末4を配置し、他方の室1Bの連通路6が設けられた側
の壁にフィルター5を配置して両室を仕切り、他方の室
1Bの上部側に輝尽性蛍光体層またはその母体層2を配
置している。7は連通路6に設けた蒸気流調節バルブで
ある。ただし、この蒸気流調節バルブ7は必ずしも必要
ではない。図5では、付活剤を含有する粉末4に対して
輝尽性蛍光体層またはその母体層2が基板3の裏面側と
なる姿勢に配置されているほかは図2と同様に構成され
ている。以上の構成の中でも、付活剤を均一にかつ効率
的にドープできる観点から、図2の構成が好ましい。ま
た、熱処理温度Tは、輝尽性蛍光体の種類によっても異
なるが、輝尽性蛍光体母体の融点Tmより低いことが好
ましく、0.40Tm<T<0.75Tmの範囲が好ま
しい。In FIG. 3, the structure is the same as that in FIG. 1 except that the stimulable phosphor layer or its matrix layer 2 is arranged in a vertical position. In FIG. 4, the heat treatment container 1 is formed of two completely separated chambers 1A and 1B, a communication path 6 is provided between the two, and a powder 4 containing an activator is placed in the lower side of one chamber 1A. Then, a filter 5 is placed on the wall of the other chamber 1B on the side where the communication path 6 is provided to partition the two chambers, and a stimulable phosphor layer or its matrix layer 2 is placed on the upper side of the other chamber 1B. are doing. 7 is a steam flow control valve provided in the communication path 6. However, this steam flow control valve 7 is not necessarily required. In FIG. 5, the structure is the same as that in FIG. 2 except that the stimulable phosphor layer or its matrix layer 2 is placed on the back side of the substrate 3 with respect to the powder 4 containing the activator. There is. Among the above configurations, the configuration shown in FIG. 2 is preferable from the viewpoint of uniformly and efficiently doping the activator. Further, although the heat treatment temperature T varies depending on the type of stimulable phosphor, it is preferably lower than the melting point Tm of the stimulable phosphor matrix, and is preferably in the range of 0.40Tm<T<0.75Tm.
【0012】フィルター5としては、(1)図6のよう
に、通気孔を有する多孔質体からなるもの、(2)図7
のように、繊維束を織り込んでクロスとしたもの、(3
)図8のように、板に多数の穴5Aを設けたもの、等が
挙げられる。以上の中でも、粉体の突沸防止の観点から
は多孔質体およびクロスが好ましく、取扱いやすさの観
点から、繊維束を織り込んだクロス(図7)がさらに好
ましい。また、フィルター5の材質は、耐食性を高める
観点からは、ガラス、アルミナ、ジルコニア等のセラミ
ックス、あるいはセラミックスをコーティングした物質
が好ましい。The filter 5 may be (1) made of a porous material having ventilation holes as shown in FIG. 6, or (2) as shown in FIG.
A cloth made of fiber bundles woven into a cloth, such as (3
) As shown in FIG. 8, an example is one in which a large number of holes 5A are provided in a plate. Among the above, porous bodies and cloths are preferred from the viewpoint of preventing powder bumping, and cloths woven with fiber bundles (FIG. 7) are more preferred from the viewpoint of ease of handling. Further, from the viewpoint of improving corrosion resistance, the material of the filter 5 is preferably glass, ceramics such as alumina, zirconia, or a material coated with ceramics.
【0013】フィルター5の厚み方向に通る各孔の最小
気孔径dは、基本的には付活剤を含有する粉末の粒径よ
り小さければよいが、突沸による画像欠陥を確実に防止
する観点から、1mm以下が好ましい。フィルター5の
厚さは、取扱い上およびドープ効率の観点から、5mm
以下が好ましい。前述のように放射線画像変換パネルの
好ましい熱処理温度Tは、0.4Tm<T<0.75T
m(Tm:輝尽性蛍光体母体の融点)であるので、フィ
ルターも同様にこの温度範囲での耐熱性が要求される。
例えば、母体がRbBrである場合は融点Tm=682
℃、従って、0.4Tm=273℃、0.75Tm=5
12℃となり、フィルター材料としては、ガラス、また
はアルミナ、ジルコニア等のセラミックスあるいはセラ
ミックスをコーティングした物質が好ましい。The minimum pore diameter d of each pore passing through the thickness of the filter 5 should basically be smaller than the particle diameter of the powder containing the activator, but from the viewpoint of reliably preventing image defects due to bumping, , preferably 1 mm or less. The thickness of the filter 5 is 5 mm from the viewpoint of handling and doping efficiency.
The following are preferred. As mentioned above, the preferable heat treatment temperature T of the radiation image conversion panel is 0.4Tm<T<0.75T.
m (Tm: melting point of the stimulable phosphor matrix), the filter is similarly required to have heat resistance in this temperature range. For example, when the base material is RbBr, the melting point Tm=682
℃, therefore 0.4Tm=273℃, 0.75Tm=5
The temperature is 12° C., and the filter material is preferably glass, ceramics such as alumina or zirconia, or materials coated with ceramics.
【0014】フィルターの気孔の密度は、孔径の大きさ
により異なるが、10ケ/cm2 以上が好ましい。ま
た、フィルターの平面上における気孔のある部分の面積
をAとし、気孔のない部分の面積をBとするとき、面積
比A/(A+B)は、ドープの効率をよくする観点から
30%以上が好ましく、50%以上がさらに好ましい。
特にフィルターの厚さが厚いほど面積比は大きい方がよ
い。図6から図8のフィルターを穴の位置をずらして重
ねるとフィルター効果が高まり、好ましい。特に図8の
多数の穴5Aをあけた板をフィルターとして用いる場合
は、図14のように穴5Aの位置をずらして重ねて用い
た方が好ましい。また、異なる最小気孔径dのフィルタ
ーを重ねてもよい。The density of pores in the filter varies depending on the size of the pores, but is preferably 10 pores/cm 2 or more. Furthermore, when the area of the part with pores on the plane of the filter is A, and the area of the part without pores is B, the area ratio A/(A+B) should be 30% or more from the viewpoint of improving doping efficiency. Preferably, 50% or more is more preferable. In particular, the thicker the filter, the better the area ratio is larger. It is preferable to overlap the filters shown in FIGS. 6 to 8 with the holes shifted in position to increase the filter effect. In particular, when using a plate with a large number of holes 5A as shown in FIG. 8 as a filter, it is preferable to shift the positions of the holes 5A and stack them as shown in FIG. 14. Furthermore, filters having different minimum pore diameters d may be stacked.
【0015】熱処理の対象である輝尽性蛍光体層または
その母体層の形成方法としては、蒸着法、スパッタリン
グ法、CVD法、イオンプレーティング法等の気相堆積
法が挙げられる。ここで「母体層」とは、付活剤を含有
していない状態の輝尽性蛍光体層をいう。Methods for forming the stimulable phosphor layer or its base layer to be subjected to heat treatment include vapor deposition methods such as vapor deposition, sputtering, CVD, and ion plating. Here, the term "base layer" refers to a stimulable phosphor layer that does not contain an activator.
【0016】蒸着法により輝尽性蛍光体層を形成する場
合の一例においては、基板を蒸着装置内に設置した後、
蒸着装置内を排気して例えば10−6Torr程度の真
空度とする。次いで、輝尽性蛍光体材料を備えた蒸発源
を所定の位置に配置して、抵抗加熱器または電子ビーム
を用いて輝尽性蛍光体材料を加熱蒸発させて、その蒸気
流を基板の被蒸着面に当てて輝尽性蛍光体を所定の厚さ
に堆積させる。蒸着工程では複数回に分けて輝尽性蛍光
体層を形成することも可能である。また、蒸着時、必要
に応じて基板を冷却または加熱してもよい。[0016] In one example of forming a stimulable phosphor layer by a vapor deposition method, after placing the substrate in a vapor deposition apparatus,
The inside of the vapor deposition apparatus is evacuated to a degree of vacuum of, for example, about 10<-6 >Torr. Next, an evaporation source with a stimulable phosphor material is placed in a predetermined position, and the stimulable phosphor material is heated and evaporated using a resistance heater or an electron beam, and the vapor flow is applied to the substrate. The stimulable phosphor is applied to the deposition surface to deposit the stimulable phosphor to a predetermined thickness. In the vapor deposition process, it is also possible to form the stimulable phosphor layer in multiple steps. Further, during vapor deposition, the substrate may be cooled or heated as necessary.
【0017】図9は、本発明の製造方法により製造され
た放射線画像変換パネルの具体的構成例を示し、10基
板、11は輝尽性蛍光体層、12は保護層、13はスペ
ーサ、14は低屈折率層である。FIG. 9 shows a specific structural example of a radiation image conversion panel manufactured by the manufacturing method of the present invention, in which 10 is a substrate, 11 is a stimulable phosphor layer, 12 is a protective layer, 13 is a spacer, and 14 is a stimulable phosphor layer. is a low refractive index layer.
【0018】基板10の材料としては、ガラス、セラミ
ックス、金属等が用いられる。具体的には、石英ガラス
、化学強化ガラス等のガラス、結晶化ガラス、アルミナ
あるいはジルコニアの焼結板等のセラミックス、アルミ
ニウム、アルミニウム−マグネシウム合金、鉄、ステン
レス、銅、クロム、鉛等の金属シート等が挙げられる。
基板10の厚さは、その材質等によって異なるが、一般
的には100μm〜5mmが好ましく、取扱いの便利性
から、特に200μm〜2mmが好ましい。[0018] As the material of the substrate 10, glass, ceramics, metal, etc. are used. Specifically, glass such as quartz glass and chemically strengthened glass, crystallized glass, ceramics such as sintered plates of alumina or zirconia, metal sheets such as aluminum, aluminum-magnesium alloy, iron, stainless steel, copper, chromium, and lead. etc. The thickness of the substrate 10 varies depending on its material, etc., but is generally preferably 100 μm to 5 mm, and particularly preferably 200 μm to 2 mm for ease of handling.
【0019】保護層12は、輝尽性蛍光体層11を物理
的にまたは化学的に保護するために設けられるものであ
る。この保護層12は、低屈折率層14を介して輝尽性
蛍光体層11に対向するように設けてもよいし、保護層
用の塗布液を輝尽性蛍光体層上に直接塗布して形成して
もよい。またあらかじめ別途形成した保護層を輝尽性蛍
光体層上に接着してもよい。The protective layer 12 is provided to protect the stimulable phosphor layer 11 physically or chemically. This protective layer 12 may be provided so as to face the stimulable phosphor layer 11 with the low refractive index layer 14 interposed therebetween, or a coating solution for the protective layer may be applied directly onto the stimulable phosphor layer. It may be formed by Alternatively, a protective layer separately formed in advance may be adhered onto the stimulable phosphor layer.
【0020】保護層12を低屈折率層14を介して設け
る場合、当該保護層12の構成材料としては、透光性が
よく、シート状に成形できるものが使用される。保護層
12は輝尽励起光および輝尽発光を効率よく透過するた
めに、広い波長範囲で高い光透過率を示すことが望まし
く、光透過率は80%以上が好ましい。そのような材料
としては、石英、ホウケイ酸ガラス、化学的強化ガラス
等の板ガラスや、PET、延伸ポリプロピレン、ポリ塩
化ビニル等の有機高分子化合物が挙げられる。ホウケイ
酸ガラスは330nm〜2.6μmの波長範囲で80%
以上の光透過率を示し、石英ガラスではさらに短波長に
おいても高い光透過率を示す。さらに、保護層12の表
面に、MgF2 等の反射防止層を設けると、輝尽励起
光および輝尽発光を効率よく透過すると共に、鮮鋭性の
低下を小さくする効果もあり好ましい。When the protective layer 12 is provided via the low refractive index layer 14, the material used for the protective layer 12 has good translucency and can be formed into a sheet shape. In order to efficiently transmit stimulated excitation light and stimulated luminescence, the protective layer 12 desirably exhibits high light transmittance over a wide wavelength range, and preferably has a light transmittance of 80% or more. Examples of such materials include plate glasses such as quartz, borosilicate glass, and chemically strengthened glass, and organic polymer compounds such as PET, oriented polypropylene, and polyvinyl chloride. Borosilicate glass is 80% in the wavelength range of 330nm to 2.6μm
It shows the above light transmittance, and quartz glass shows even higher light transmittance at shorter wavelengths. Furthermore, it is preferable to provide an anti-reflection layer such as MgF2 on the surface of the protective layer 12, since this is effective in efficiently transmitting stimulated excitation light and stimulated luminescence and reduces deterioration in sharpness.
【0021】保護層12を輝尽性蛍光体層11上に直接
設ける場合、当該保護層12の構成材料としては、酢酸
セルロース、ニトロセルロース、ポリメチルメタクリレ
ート、ポリビニルブチラール、ポリビニルホルマール、
ポリカーボネート、ポリエステル、ポリエチレンテレフ
タレート、ポリエチレン、塩化ビニリデン、ナイロン等
を用いることができる。また、この保護層12は、蒸着
法、スパッタリング法等により、SiC、SiO2 、
Si3 N4、Al2 O3 等の無機物質を積層して
形成してもよい。この場合の保護層12の層厚は、保護
層12を輝尽性蛍光体層11に直接設ける場合は、0.
1〜100μmが好ましく、低屈折率層14を介して設
ける場合は50μm〜5mm、好ましくは100μm〜
3mmである。また、保護層12の厚さは、通常50μ
m〜5mmであり、良好な防湿性を得るためには、10
0μm〜3mmが好ましい。When the protective layer 12 is provided directly on the stimulable phosphor layer 11, the constituent materials of the protective layer 12 include cellulose acetate, nitrocellulose, polymethyl methacrylate, polyvinyl butyral, polyvinyl formal,
Polycarbonate, polyester, polyethylene terephthalate, polyethylene, vinylidene chloride, nylon, etc. can be used. Moreover, this protective layer 12 is made of SiC, SiO2,
It may also be formed by laminating inorganic materials such as Si3 N4 and Al2 O3. In this case, the layer thickness of the protective layer 12 is 0.000 mm when the protective layer 12 is provided directly on the stimulable phosphor layer 11.
The thickness is preferably 1 to 100 μm, and when provided via the low refractive index layer 14, the thickness is 50 μm to 5 mm, preferably 100 μm to
It is 3mm. Further, the thickness of the protective layer 12 is usually 50 μm.
m to 5 mm, and in order to obtain good moisture resistance, 10
0 μm to 3 mm is preferable.
【0022】低屈折率層14は、放射線画像の鮮鋭性を
さらに向上させる観点から必要に応じて設けられるもの
である。具体的には、CaF2 (屈折率1.23〜1
.26) 、Na3 AlF6 (屈折率1.35)
、MgF2 (屈折率1.38) 、SiO2 (屈折
率1.46) 等からなる層;エタノール (屈折率1
.36) 、メタノール (屈折率1.33) 、ジエ
チルエーテル (屈折率1.35) 等の液体からなる
層;空気、窒素、アルゴン等の気体からなる層;真空層
等のように屈折率が実質的に1である層;等から選択さ
れる。特に、気体層または真空層が好ましい。この場合
、低屈折率層14の厚さは、通常0.05〜3mmであ
る。The low refractive index layer 14 is provided as necessary from the viewpoint of further improving the sharpness of the radiation image. Specifically, CaF2 (refractive index 1.23 to 1
.. 26) , Na3 AlF6 (refractive index 1.35)
, MgF2 (refractive index 1.38), SiO2 (refractive index 1.46), etc.; ethanol (refractive index 1
.. 36) A layer consisting of a liquid such as methanol (refractive index 1.33) or diethyl ether (refractive index 1.35); a layer consisting of a gas such as air, nitrogen, or argon; 1; and so on. In particular, a gas layer or a vacuum layer is preferred. In this case, the thickness of the low refractive index layer 14 is usually 0.05 to 3 mm.
【0023】低屈折率層14は、輝尽性蛍光体層11と
密着していることが好ましく、従って、低屈折率層14
が液体層、気体層、真空層の場合には、そのままでよい
が、低屈折率層14をCaF2 、Na3 AlF6
、MgF2 、SiO2 等を用いて保護層12の内面
に設けた場合には、輝尽性蛍光体層11と低屈折率層1
4は例えば接着剤等により密着させればよい。It is preferable that the low refractive index layer 14 is in close contact with the stimulable phosphor layer 11. Therefore, the low refractive index layer 14
If it is a liquid layer, a gas layer, or a vacuum layer, it may be left as is, but the low refractive index layer 14 may be made of CaF2, Na3 AlF6.
, MgF2, SiO2, etc., on the inner surface of the protective layer 12, the stimulable phosphor layer 11 and the low refractive index layer 1
4 may be brought into close contact with, for example, an adhesive or the like.
【0024】保護層12を輝尽性蛍光体層11に対して
距離をおいて配設する場合には、基板10と保護層12
との間に、輝尽性蛍光体層11を取囲むスペーサ13が
設けられる。スペーサ13としては、輝尽性蛍光体層1
1を外部雰囲気から遮断した状態で保持することができ
るものであれば特に制限されず、ガラス、セラミックス
、金属、プラスチック等が用いられる。When the protective layer 12 is disposed at a distance from the stimulable phosphor layer 11, the substrate 10 and the protective layer 12
A spacer 13 surrounding the stimulable phosphor layer 11 is provided between the two. As the spacer 13, the stimulable phosphor layer 1
There is no particular restriction on the material as long as the material can be kept isolated from the external atmosphere, and glass, ceramics, metal, plastic, etc. can be used.
【0025】本発明において「輝尽性蛍光体」とは、最
初の光または高エネルギー放射線が照射された後に、光
的、熱的、機械的、化学的または電気的等の刺激(輝尽
励起)により、最初の光または高エネルギー放射線の照
射量に対応した輝尽発光を示す蛍光体をいうが、実用的
な面からは、波長が500nm以上の輝尽励起光によっ
て輝尽発光を示す蛍光体が好ましい。In the present invention, "stimulable phosphor" refers to a stimulable phosphor that is stimulated optically, thermally, mechanically, chemically, or electrically after being irradiated with the first light or high-energy radiation. ) refers to a phosphor that exhibits stimulated luminescence corresponding to the irradiation amount of initial light or high-energy radiation; Body is preferred.
【0026】輝尽性蛍光体層を構成する輝尽性蛍光体と
しては、下記一般式で示されるアルカリハライド蛍光体
が好ましい。
一般式: MI X・aMIIX’ 2
・bMIII X’’3 ・cA:dB一般式中、M
I は、Li,Na,K,Rb,Csの少なくとも1種
のアルカリ金属を表す。MIIは、Be,Mg,Ca,
Sr,Ba,Zn,Cd,Cu,Niの少なくとも1種
の2価の金属を表す。MIII は、Sc,Y,La,
Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,D
y,Ho,Er,Tm,Yb,Lu,Al,Ga,In
の少なくとも1種の3価の金属を表す。X,X’ ,
X’’は、F,Cl,Br,Iの少なくとも1種のハロ
ゲンを表す。Aは、酸素を含有する化合物組成であって
、好ましくは前記MI 、MII、MIII 、さらに
後記付活剤Bを構成する化合物の少なくとも1種を表す
。Bは、付活剤組成であって、Eu,Tb,Ce,Tm
,Dy,Pr,Ho,Nd,Yb,Er,Gd,Lu,
Sm,Y,Tl,Na,Ag,Cu,In,Mgの少な
くとも1種の金属を表す。a,b,c,dは、0≦a<
0.5、0≦b<0.5、0<c≦0.5、好ましくは
10−6<c≦0.2、0<d≦0.2を満たす数を表
す。ただし、AがBを構成する付活剤の酸素化合物であ
る場合は、d=0 でもよい。The stimulable phosphor constituting the stimulable phosphor layer is preferably an alkali halide phosphor represented by the following general formula. General formula: MIX・aMIIX' 2
・bMIII X''3 ・cA: dB In the general formula, M
I represents at least one alkali metal of Li, Na, K, Rb, and Cs. MII is Be, Mg, Ca,
Represents at least one divalent metal of Sr, Ba, Zn, Cd, Cu, and Ni. MIII is Sc, Y, La,
Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, D
y, Ho, Er, Tm, Yb, Lu, Al, Ga, In
represents at least one trivalent metal. X, X',
X'' represents at least one halogen selected from F, Cl, Br, and I. A is a compound composition containing oxygen, and preferably represents at least one of the compounds constituting MI, MII, MIII, and activator B described later. B is the activator composition, which includes Eu, Tb, Ce, Tm
, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu,
Represents at least one metal selected from Sm, Y, Tl, Na, Ag, Cu, In, and Mg. a, b, c, d are 0≦a<
0.5, 0≦b<0.5, 0<c≦0.5, preferably 10-6<c≦0.2, 0<d≦0.2. However, when A is an oxygen compound of the activator constituting B, d may be 0.
【0027】前記アルカリハライド輝尽性蛍光体を構成
する輝尽性蛍光体原料としては、下記のものが用いられ
る。
(1)LiF、LiCl、LiBr、LiI、NaF、
NaCl、NaBr、NaI、KF、KCl、KBr、
KI、RbF、RbCl、RbBr、RbI、CsF、
CsCl、CsBr、CsIの少なくとも1種。
(2)BeF2 、BeCl2 、BeBr2 、Be
I2 、MgF2 、MgCl2 、MgBr2 、M
gI2 、CaF2 、CaCl2 、CaBr2 、
CaI2 、SrF2 、SrCl2 、SrBr2
、SrI2 、BaF2 、BaCl2 、BaBr2
、BaBr2 ・2H2 O、BaI2 、ZnF2
、ZnCl2 、ZnBr2 、ZnI2 、CdF
2 、CdCl2 、CdBr2 、CdI2 、Cu
F2、CuCl2 、CuBr2 、CuI2 、Ni
F2 、NiCl2 、NiBr2 、NiI2 の少
なくとも1種。The following materials are used as the stimulable phosphor raw materials constituting the alkali halide stimulable phosphor. (1) LiF, LiCl, LiBr, LiI, NaF,
NaCl, NaBr, NaI, KF, KCl, KBr,
KI, RbF, RbCl, RbBr, RbI, CsF,
At least one of CsCl, CsBr, and CsI. (2) BeF2, BeCl2, BeBr2, Be
I2, MgF2, MgCl2, MgBr2, M
gI2, CaF2, CaCl2, CaBr2,
CaI2, SrF2, SrCl2, SrBr2
, SrI2, BaF2, BaCl2, BaBr2
, BaBr2 ・2H2 O, BaI2 , ZnF2
, ZnCl2, ZnBr2, ZnI2, CdF
2, CdCl2, CdBr2, CdI2, Cu
F2, CuCl2, CuBr2, CuI2, Ni
At least one of F2, NiCl2, NiBr2, and NiI2.
【0028】(3)ScF3 、ScCl3 、ScB
r3 、ScI3 、YF3 、YCl3 、YBr3
、YI3 、LaF3 、LaCl3 、LaBr3
、LaI3 、CeF3 、CeCl3 、CeBr
3 、CeI3 、PrI3 、PrF3 、PrCl
3 、PrBr3 、PrI3 、NdF3 、NdC
l3 、NdBr3 、NdI3 、PmF3 、Pm
Cl3 、PmBr3 、PmI3 、SmF3 、S
mCl3 、SmBr3 、SmI3 、EuF3 、
EuCl3 、EuBr3 、EuI3 、GdF3
、GdCl3 、GdBr3 、GdI3 、TbF3
、TbCl3 、TbBr3 、TbI3 、DyF
3 、DyCl3 、DyBr3 、DyI3 、Ho
F3 、HoCl3 、HoBr3 、HoI3 、E
rF3 、ErCl3 、ErBr3 、ErI3 、
TmF3 、TmCl3 、TmBr3 、TmI3
、YbF3 、YbCl3 、YbBr3 、YbI3
、LuF3 、LuCl3 、LuBr3 、LuI
3 、AlF3 、AlCl3 、AlBr3 、Al
I3 、GaF3 、GaCl3 、GaBr3 、G
aI3 、InF3 、InCl3 、InBr3 、
InI3 の少なくとも1種。
(4)Eu化合物群、Tb化合物群、Ce化合物群、T
m化合物群、Dy化合物群、Pr化合物群、Ho化合物
群、Nd化合物群、Yb化合物群、Er化合物群、Gd
化合物群、Lu化合物群、Sm化合物群、Y化合物群、
Tl化合物群、Na化合物群、Ag化合物群、Cu化合
物群、In化合物群、Mg化合物群の少なくとも1種の
付活剤原料。(3) ScF3, ScCl3, ScB
r3, ScI3, YF3, YCl3, YBr3
, YI3, LaF3, LaCl3, LaBr3
, LaI3, CeF3, CeCl3, CeBr
3, CeI3, PrI3, PrF3, PrCl
3, PrBr3, PrI3, NdF3, NdC
l3, NdBr3, NdI3, PmF3, Pm
Cl3, PmBr3, PmI3, SmF3, S
mCl3, SmBr3, SmI3, EuF3,
EuCl3, EuBr3, EuI3, GdF3
, GdCl3, GdBr3, GdI3, TbF3
, TbCl3, TbBr3, TbI3, DyF
3, DyCl3, DyBr3, DyI3, Ho
F3, HoCl3, HoBr3, HoI3, E
rF3, ErCl3, ErBr3, ErI3,
TmF3, TmCl3, TmBr3, TmI3
, YbF3, YbCl3, YbBr3, YbI3
, LuF3, LuCl3, LuBr3, LuI
3, AlF3, AlCl3, AlBr3, Al
I3, GaF3, GaCl3, GaBr3, G
aI3, InF3, InCl3, InBr3,
At least one type of InI3. (4) Eu compound group, Tb compound group, Ce compound group, T
m compound group, Dy compound group, Pr compound group, Ho compound group, Nd compound group, Yb compound group, Er compound group, Gd
compound group, Lu compound group, Sm compound group, Y compound group,
At least one activator raw material from the Tl compound group, the Na compound group, the Ag compound group, the Cu compound group, the In compound group, and the Mg compound group.
【0029】本発明においては、アルカリハライド蛍光
体が蒸着法に好適であることから特に好ましく用いるこ
とができる。ただし、本発明においては、以上の蛍光体
に限定されず、放射線を照射した後、輝尽励起光を照射
した場合に輝尽発光を示す蛍光体であれば、その他の蛍
光体をも用いることができる。In the present invention, alkali halide phosphors are particularly preferably used since they are suitable for vapor deposition. However, the present invention is not limited to the above-mentioned phosphors, and other phosphors may also be used as long as they exhibit stimulated luminescence when irradiated with radiation and then irradiated with stimulated excitation light. Can be done.
【0030】図10は本発明の方法により製造された放
射線画像変換パネルを用いて構成された放射線画像変換
装置の概略を示し、20は放射線発生装置、21は被写
体、22は放射線画像変換パネル、23は輝尽励起光源
、24は放射線画像変換パネル22より放射された輝尽
発光を検出する光電変換装置、25は光電変換装置24
で検出された信号を画像として再生する再生装置、26
は再生装置25により再生された画像を表示する表示装
置、27は輝尽励起光と輝尽発光とを分離し、輝尽発光
のみを透過させるフィルターである。FIG. 10 schematically shows a radiation image conversion device constructed using a radiation image conversion panel manufactured by the method of the present invention, in which 20 is a radiation generator, 21 is a subject, 22 is a radiation image conversion panel, 23 is a stimulated excitation light source, 24 is a photoelectric conversion device that detects stimulated luminescence emitted from the radiation image conversion panel 22, and 25 is a photoelectric conversion device 24.
a reproduction device that reproduces the detected signal as an image, 26;
27 is a display device that displays the image reproduced by the reproduction device 25; and 27 is a filter that separates stimulated excitation light and stimulated luminescence and allows only stimulated luminescence to pass through.
【0031】この放射線画像変換装置においては、放射
線発生装置20からの放射線は被写体21を通して放射
線画像変換パネル22に入射する。この入射した放射線
は放射線画像変換パネル22の輝尽性蛍光体層に吸収さ
れ、そのエネルギーが蓄積され、放射線透過像の蓄積像
が形成される。次に、この蓄積像を輝尽励起光源23か
らの輝尽励起光で励起して輝尽発光として放射させる。
放射される輝尽発光の強弱は、蓄積された放射線エネル
ギー量に比例するので、この光信号を例えば光電子増倍
管等の光電変換装置24で光電変換し、再生装置25に
よって画像として再生し、表示装置26によって表示す
ることにより、被写体21の放射線透過像を観察するこ
とができる。In this radiation image conversion apparatus, radiation from the radiation generator 20 enters the radiation image conversion panel 22 through the subject 21. This incident radiation is absorbed by the stimulable phosphor layer of the radiation image conversion panel 22, its energy is accumulated, and an accumulated radiation image is formed. Next, this accumulated image is excited with stimulated excitation light from the stimulated excitation light source 23 and is emitted as stimulated luminescence. The strength of the emitted stimulated luminescence is proportional to the amount of accumulated radiation energy, so this optical signal is photoelectrically converted by a photoelectric conversion device 24 such as a photomultiplier tube, and reproduced as an image by a reproduction device 25. By displaying it on the display device 26, a radiographic image of the subject 21 can be observed.
【0032】[0032]
【実施例】以下、本発明の実施例を具体的に説明するが
、本発明はこれらの実施例に限定されるものではない。
〔実施例1〕図13に示す蒸着装置のルツボ35に輝尽
性蛍光体の母体であるRbBr蒸発源37を設置し、1
mm厚で400mm×500mm大の結晶化ガラスから
なる基板34およびフィルター43を所定位置に設置し
た。蒸気流の調整板30を移動させて、蒸気流の流線と
基板34面との交角がほぼ直角となるように、ルツボ3
5の真上に調整板30のスリット30Aを位置させた。
このときルツボ35と基板34との距離は30cmであ
り、調整板30とルツボ35との距離は25cmであり
、スリット30Aの幅は3cmであった。次に、ベルジ
ャー31内を排気して2×10−6Torrの真空度に
保持した。また、基板34は、加熱ヒータ33により1
50℃に加熱し、この温度に保持した。次いで、基板3
4を50cm/分の速度で左右に往復移動させながら、
エレクトロンビームガン36によりエレクトロンビーム
36AをRbBr蒸発源37に照射し加熱して、輝尽性
蛍光体の母体であるRbBrを連続的に蒸発させた。な
お、膜厚モニタ32によって蒸着速度、蒸着膜厚を監視
しながら蒸着を進め、蒸着速度は5μm/分とした。輝
尽性蛍光体層の膜厚が膜厚モニタ32の表示する所定膜
厚300μmとなったところで蒸着を終了させ、基板3
4と輝尽性蛍光体の母体層から構成されるプレートPを
得た。なお、図13において、38は電流導入線、39
は水冷用パイプ、40は補助バルブ、41はメインバル
ブ、42はリークバルブである。図11に示すように、
熱処理容器1内の上部側に上記プレートPを輝尽性蛍光
体の母体層2が下面側となるように水平に配置し、この
熱処理容器1内の下部側にRbBr:5×10−4Tl
Br(付活剤)を含有する粉末4を配置し、この粉末4
とプレートPとを仕切るフィルター5を当該粉末4の上
部に重ね合わせて配置し、500℃で1時間にわたり熱
処理を行った。ただし、フィルター5は、図6に示した
構成で、アルミナからなる多孔質体からなり、最小気孔
径dが1mmのものである。EXAMPLES Examples of the present invention will be specifically described below, but the present invention is not limited to these examples. [Example 1] An RbBr evaporation source 37, which is the base of the stimulable phosphor, was installed in the crucible 35 of the vapor deposition apparatus shown in FIG.
A substrate 34 made of crystallized glass measuring 400 mm x 500 mm in thickness and a filter 43 were placed at predetermined positions. The crucible 3 is moved by moving the vapor flow adjustment plate 30 so that the intersection angle between the streamline of the vapor flow and the surface of the substrate 34 is approximately a right angle.
The slit 30A of the adjustment plate 30 was positioned directly above the adjustment plate 5. At this time, the distance between the crucible 35 and the substrate 34 was 30 cm, the distance between the adjusting plate 30 and the crucible 35 was 25 cm, and the width of the slit 30A was 3 cm. Next, the inside of the bell jar 31 was evacuated and maintained at a vacuum level of 2×10 −6 Torr. In addition, the substrate 34 is heated once by the heater 33.
It was heated to 50°C and held at this temperature. Next, the substrate 3
4 back and forth at a speed of 50 cm/min,
The RbBr evaporation source 37 was irradiated with an electron beam 36A by the electron beam gun 36 and heated to continuously evaporate RbBr, which is the matrix of the stimulable phosphor. Incidentally, the deposition proceeded while monitoring the deposition rate and the deposited film thickness using the film thickness monitor 32, and the deposition rate was set at 5 μm/min. When the film thickness of the stimulable phosphor layer reaches the predetermined film thickness of 300 μm displayed on the film thickness monitor 32, the vapor deposition is terminated, and the substrate 3
A plate P was obtained consisting of a host layer of 4 and a stimulable phosphor. In addition, in FIG. 13, 38 is a current introduction line, 39
4 is a water cooling pipe, 40 is an auxiliary valve, 41 is a main valve, and 42 is a leak valve. As shown in Figure 11,
The plate P is placed horizontally on the upper side of the heat treatment container 1 so that the matrix layer 2 of the stimulable phosphor is on the lower side, and RbBr: 5 × 10 -4 Tl is placed on the lower side of the heat treatment container 1.
A powder 4 containing Br (activator) is placed, and this powder 4
A filter 5 that partitions the powder and the plate P was placed on top of the powder 4, and heat treatment was performed at 500° C. for 1 hour. However, the filter 5 has the configuration shown in FIG. 6, is made of a porous material made of alumina, and has a minimum pore diameter d of 1 mm.
【0033】熱処理後のプレートPを用いて放射線画像
変換パネルを作製し、下記のようにして画像欠陥を調べ
た。結果は後記表1に示したとおりである。
画像欠陥
上記放射線画像変換パネルを用いて、図10に示す放射
線画像変換装置により放射線画像を読取り記録するテス
トを行い、放射線画像の単位面積(400mm×400
mm)当りに存在する、大きさが1mm以上の欠陥の個
数を調べて評価した。A radiation image conversion panel was prepared using the heat-treated plate P, and image defects were examined as follows. The results are shown in Table 1 below. Image Defect Using the radiation image conversion panel described above, a test was conducted in which a radiation image was read and recorded by the radiation image conversion device shown in FIG.
Evaluation was made by examining the number of defects with a size of 1 mm or more present per mm).
【0034】〔実施例2〜6,8〕実施例1において、
フィルター5の構成を後記表1に示すとおりとしたほか
は同様にして熱処理を行って放射線画像変換パネルを作
製し、同様にして画像欠陥を調べた。結果は後記表1に
示したとおりである。[Examples 2 to 6, 8] In Example 1,
A radiation image conversion panel was prepared by heat treatment in the same manner except that the configuration of the filter 5 was changed as shown in Table 1 below, and image defects were examined in the same manner. The results are shown in Table 1 below.
【0035】〔実施例7〕実施例1において、図12に
示すように、フィルター5を付活剤を含有する粉末4か
ら離間させた状態に配置したほかは同様にして熱処理を
行って放射線画像変換パネルを作製し、同様にして画像
欠陥を調べた。結果は後記表1に示したとおりである。[Example 7] Heat treatment was carried out in the same manner as in Example 1 except that the filter 5 was placed apart from the powder 4 containing the activator as shown in FIG. A conversion panel was produced and image defects were examined in the same manner. The results are shown in Table 1 below.
【0036】〔比較例1〕実施例1において、フィルタ
ー5を用いないほかは同様にして熱処理を行って放射線
画像変換パネルを作製し、同様にして画像欠陥を調べた
。結果は後記表1に示したとおりである。[Comparative Example 1] A radiation image conversion panel was prepared by performing heat treatment in the same manner as in Example 1 except that filter 5 was not used, and image defects were examined in the same manner. The results are shown in Table 1 below.
【0037】[0037]
【表1】[Table 1]
【0038】表1から明らかなように、本発明の製造方
法によれば、画像欠陥の少ない放射線画像変換パネルが
得られる。特に、フィルターの気孔径dが1mm以下で
あれば、画像欠陥がほとんど発生しない。また、クロス
、多孔質体からなるフィルターによれば、板に穴を設け
たものよりも画像欠陥が少ない。なお、フィルターの耐
食性についても調べたところ、実施例3で用いたモリブ
デン製のフィルターよりも、その他の実施例で用いたア
ルミナ、ジルコニアからなるフィルターの方が耐食性が
優れていた。As is clear from Table 1, according to the manufacturing method of the present invention, a radiation image conversion panel with fewer image defects can be obtained. In particular, if the pore diameter d of the filter is 1 mm or less, almost no image defects will occur. Furthermore, a filter made of cloth or a porous material has fewer image defects than a filter made of a plate with holes. In addition, when the corrosion resistance of the filter was also investigated, it was found that the filters made of alumina and zirconia used in the other Examples had better corrosion resistance than the filter made of molybdenum used in Example 3.
【0039】[0039]
【発明の効果】以上詳細に説明したように、本発明によ
れば、画像欠陥の少ない放射線画像変換パネルが得られ
る。As described above in detail, according to the present invention, a radiation image conversion panel with fewer image defects can be obtained.
【図1】フィルターの配置例を示す説明図である。FIG. 1 is an explanatory diagram showing an example of arrangement of filters.
【図2】フィルターの配置例を示す説明図である。FIG. 2 is an explanatory diagram showing an example of arrangement of filters.
【図3】フィルターの配置例を示す説明図である。FIG. 3 is an explanatory diagram showing an example of arrangement of filters.
【図4】フィルターの配置例を示す説明図である。FIG. 4 is an explanatory diagram showing an example of arrangement of filters.
【図5】フィルターの配置例を示す説明図である。FIG. 5 is an explanatory diagram showing an example of arrangement of filters.
【図6】フィルターの構成例を示す説明図である。FIG. 6 is an explanatory diagram showing a configuration example of a filter.
【図7】フィルターの構成例を示す説明図である。FIG. 7 is an explanatory diagram showing a configuration example of a filter.
【図8】フィルターの構成例を示す説明図である。FIG. 8 is an explanatory diagram showing an example of the configuration of a filter.
【図9】放射線画像変換パネルの構成例を示す説明図で
ある。FIG. 9 is an explanatory diagram showing a configuration example of a radiation image conversion panel.
【図10】放射線画像変換装置の概略を示す説明図であ
る。FIG. 10 is an explanatory diagram showing an outline of a radiation image conversion device.
【図11】実施例で用いた熱処理容器の概略を示す説明
図である。FIG. 11 is an explanatory diagram schematically showing a heat treatment container used in Examples.
【図12】実施例で用いた熱処理容器の概略を示す説明
図である。FIG. 12 is an explanatory diagram schematically showing a heat treatment container used in Examples.
【図13】実施例で用いた蒸着装置の概略を示す説明図
である。FIG. 13 is an explanatory diagram schematically showing a vapor deposition apparatus used in Examples.
【図14】フィルターの構成例を示す説明図である。FIG. 14 is an explanatory diagram showing a configuration example of a filter.
1 熱処理容器
1A 室1B 室
2 輝尽性蛍光体層またはその母体層3
基板
4 付活剤を含有する粉末
5 フィルター
5A 穴6 連通路
7 蒸気流
調節バルブ
8 ヒーター
10 基板11 輝尽性蛍光体層
12 保護層13
スペーサ
14 低屈折率層
20 放射線発生装置
21 被写体22 放射線画像変換パネル
23 輝尽励起光源
24 光電変換装置
25 再生装置26 表示装置
27 フィルター
P プレート
30 調整板30A スリット
31
ベルジャー
32 膜厚モニタ
33 加熱ヒータ
34 基板
35 ルツボ36 エレク
トロンビームガン 36A エレクトロン
ビーム
37 RbBr蒸発源
38 電流導入線
39 水冷用パイプ
40 補助バルブ
41 メインバルブ
42 リークバルブ
43 フィルター1 Heat treatment container
1A Chamber 1B Chamber 2 Stimulable phosphor layer or its matrix layer 3
substrate
4 Powder containing activator 5 Filter
5A Hole 6 Communication path
7 Steam flow control valve 8 Heater
10 Substrate 11 Stimulable phosphor layer
12 Protective layer 13
Spacer
14 Low refractive index layer 20 Radiation generator
21 Subject 22 Radiation image conversion panel
23 Photostimulation excitation light source 24 Photoelectric conversion device
25 Playback device 26 Display device
27 Filter P plate
30 Adjustment plate 30A slit
31
Bell jar 32 film thickness monitor
33 Heater 34 Substrate
35 Crucible 36 Electron beam gun 36A Electron beam 37 RbBr evaporation source
38 Current introduction line 39 Water cooling pipe
40 Auxiliary valve 41 Main valve
42 Leak valve 43 Filter
Claims (1)
成した後、これを付活剤を含有する粉末の存在下で熱処
理する工程を含む放射線画像変換パネルの製造方法にお
いて、付活剤を含有する粉末が配置された雰囲気と、輝
尽性蛍光体層またはその母体層が配置された雰囲気とを
仕切るフィルターを設けて熱処理することを特徴とする
放射線画像変換パネルの製造方法。Claim 1. A method for producing a radiation image conversion panel, which comprises a step of forming a stimulable phosphor layer or its base layer and then heat-treating it in the presence of a powder containing an activator. 1. A method for producing a radiation image conversion panel, comprising heat-treating the panel by providing a filter that partitions an atmosphere in which a powder containing the stimulable phosphor layer or its base layer is placed from an atmosphere in which a stimulable phosphor layer or its matrix layer is placed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17572091A JP3228527B2 (en) | 1991-06-21 | 1991-06-21 | Manufacturing method of radiation image conversion panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17572091A JP3228527B2 (en) | 1991-06-21 | 1991-06-21 | Manufacturing method of radiation image conversion panel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04372900A true JPH04372900A (en) | 1992-12-25 |
JP3228527B2 JP3228527B2 (en) | 2001-11-12 |
Family
ID=16001063
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Application Number | Title | Priority Date | Filing Date |
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JP17572091A Expired - Fee Related JP3228527B2 (en) | 1991-06-21 | 1991-06-21 | Manufacturing method of radiation image conversion panel |
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JP (1) | JP3228527B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006193545A (en) * | 2005-01-11 | 2006-07-27 | Konica Minolta Medical & Graphic Inc | Method for producing radiation image conversion panel and vacuum deposition apparatus |
-
1991
- 1991-06-21 JP JP17572091A patent/JP3228527B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006193545A (en) * | 2005-01-11 | 2006-07-27 | Konica Minolta Medical & Graphic Inc | Method for producing radiation image conversion panel and vacuum deposition apparatus |
Also Published As
Publication number | Publication date |
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JP3228527B2 (en) | 2001-11-12 |
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