JPH04322452A - Semiconductor device housing container of semiconductor element manufacture of semicondcutor device - Google Patents

Abstract

PURPOSE:To increase the heat-dissipating performance of a semiconductor element. CONSTITUTION:A block mounting hole 12 is formed in a frame 10; a heat- dissipating block 20 is mounted inside the block mounting hole 12. A semiconductor element 30 is mounted on the heat-dissipating block 20. Thereby, heat discharged from the semiconductor element 30 is discharged to a printed-circuit board 50 with good efficiency via the heat-dissipating block 20; the heat- dissipating performance of the semiconductor element 30 can be increased.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to an improvement for increasing the heat dissipation performance of a semiconductor element.

0002

2. Description of the Related Art As is well known, semiconductor devices are often used mounted on a printed circuit board or the like. However, when the size of a semiconductor element is minute, handling thereof is not easy, and unreasonable force is likely to be applied to the semiconductor element during the mounting process. If excessive force is applied to a semiconductor element, not only will its characteristics be adversely affected, but in some cases, the semiconductor element may be destroyed.

[0003] In order to deal with this situation, a technique has been proposed in which a semiconductor element is housed in a storage container with a planar size of approximately 1 cm x 1 cm, and the semiconductor element is handled together with this storage container.

FIG. 23 is a sectional view showing a semiconductor device SD using such a storage container, in which a semiconductor element 8 is housed in the semiconductor element storage container SC. Storage container SC
is equipped with a ceramic frame 1, and the ceramic frame 1 has a semiconductor element accommodating recess 2 in the center of its upper surface.
is formed, and leads 4 are inserted into both sides of the ceramic frame 1 from the top surface side to the bottom surface side. Further, electrodes 5 connected to the upper ends of the leads 4 are provided on both sides of the upper surface of the ceramic frame 1, and signal input/output electrodes connected to the lower ends of the leads 4 are provided on both sides of the lower surface of the ceramic frame 1. 6 is provided.

Furthermore, a die bonding pad 7 made of copper plated with nickel is attached to the bottom surface of the semiconductor element housing recess 2 of the ceramic frame 1. Furthermore, a semiconductor element 8 is attached onto the die bonding pad 7 via a die bonding bonding material 3 such as solder. Further, an electrode portion is formed on the upper surface side of the semiconductor element 8, and the electrode portion and the electrode 5 of the ceramic frame 1 are connected by a thin metal wire 9.

To mount such a semiconductor device SD on a printed circuit board or the like, the electrodes 6 of the semiconductor device SD are fixed with solder onto a conductive pattern on the printed circuit board. Since the semiconductor element 8 is housed in the insulating ceramic frame 1, the semiconductor element 8 will not be electrically short-circuited with surrounding members at parts other than the electrodes 6.

[0007]

However, in the conventional semiconductor device SD, since the semiconductor element 8 is attached to the ceramic frame 1 with low thermal conductivity via the die bonding pad 7, the semiconductor element 8 is The heat generated during operation is hardly emitted to the ceramic frame 1 side, but is emitted directly from the semiconductor element 8 into the air, or is emitted to the ceramic frame 1 and the printed circuit board via the thin metal wire 9. However, the amount of heat dissipation is limited. For this reason, the conventional semiconductor device SD has a problem in that it is not possible to use a high-power semiconductor element that generates a large amount of heat.

[0008] A first object of the present invention is to provide a semiconductor device which solves the problems of the prior art described above, improves heat dissipation performance, and allows the use of semiconductor elements that generate a large amount of heat.

A second object of the present invention is to provide a semiconductor device that is easy to manufacture in addition to achieving the first object.

A third object of the present invention is to further improve the ability to protect semiconductor elements and wiring members, in addition to achieving the first object.

A fourth object of the present invention is to provide a semiconductor element storage container that can be used in a semiconductor device that achieves the first object.

A fifth object of the present invention is to provide a method for manufacturing a semiconductor device that achieves each of the above objects.

[0013]

[Means for Solving the Problems] A semiconductor device according to a first configuration described in claim 1 is provided with a window hole penetrating in the vertical direction at the bottom of an insulating frame, and at least one of a metal and an alloy is provided. A heat dissipation block made of one side is inserted into the window hole.

In the semiconductor device having the second structure described in claim 2, the height of the lower surface of the portion of the conductive structure fixed to the lower surface of the insulating frame and the height of the lower surface of the heat radiation block are substantially equal to each other. are considered to be the same.

In the semiconductor device having the third structure, a combination frame is used in which first and second insulating frames, each having a window hole, are stacked on top of each other. However, the window hole of the second insulating frame has a larger size than the window hole of the first insulating frame, and the first insulating frame is on the bottom in the above-mentioned superposition.

Further, the heat dissipation block is inserted into the window hole of the first insulating frame, and the semiconductor element is mounted on the heat dissipation block. Furthermore, the conductive structure extends along the first insulating frame.

[0017] In the semiconductor device having the fourth configuration described in claim 4, the step-like window hole defined by the combination frame is filled with resin so that the upper surface of the semiconductor element and the conductive wire connected thereto are filled with resin. and are sealed.

Further, each of the semiconductor element storage containers according to the first to third configurations described in claims 5 to 7 has a structure used in the semiconductor device according to the first to third configurations. In both cases, a heat dissipation block is inserted into the window hole of the insulating frame.

On the other hand, the first to fourth manufacturing methods described in claims 8 to 11 specify the manufacturing process of the above semiconductor device. Either method includes the step of fixing the semiconductor element onto the heat radiation block after obtaining a structure in which the heat radiation block is inserted into the window hole of the insulating frame.

In the first method, a heat dissipation block is inserted into the window hole of the insulating frame after the conductive structure is attached to the insulating frame, but in the second method, a combination structure of the insulating frame and the heat dissipation block is used. Then install the conductive structure. A semiconductor device having the first configuration can be obtained by either of these first and second methods.

In the third method, the first and second insulating frames are used, but after the semiconductor element is fixed on the heat dissipation block and wiring is performed, the first and second insulating frames are The feature is that the frames are joined together. A semiconductor device having the third configuration can be obtained by this method.

Furthermore, the fourth method adds a resin sealing step, and by this method, a semiconductor device having the fourth configuration can be obtained.

[0023] The correspondence relationship between each of the embodiments described later and each claim is as follows.

Claim 1...First to sixth embodimentsClaim 2...First to sixth embodimentsClaim 3...Fifth embodiment and sixth embodimentClaim 4...
Fifth and sixth embodimentsClaim 5...First to fourth embodimentsClaim 6...First to fourth embodimentsClaim 7...Fifth and sixth embodimentsClaim 8 ...Production method of the first and second embodimentsClaim 9
...Manufacturing method of the third and fourth embodimentsClaim 10...Fifth
and the manufacturing method of the sixth embodiment.Claim 11...The manufacturing method of the fifth and sixth embodiments.

[0025]

[Operation] In any of the semiconductor devices of the first to fourth configurations of the present invention, the heat generated in the semiconductor element is radiated downward through the heat radiation block, so that a high-power semiconductor element can be used. (corresponds to the first purpose).

In particular, in the semiconductor device of the second configuration, when the semiconductor device is mounted on a wiring board or the like, the ability of the heat dissipation block to contact the board is enhanced.

Furthermore, in the semiconductor device of the third configuration, the wiring process between the semiconductor element and the conductive structure can be performed within a relatively wide space, and the manufacturing thereof is easy (corresponding to the second objective).

Furthermore, in the semiconductor device of the fourth configuration, since the upper surface of the semiconductor element and the conductive wires connected thereto are sealed with resin, the protection ability of the upper surface of the semiconductor element and the conductive wires connected thereto is further improved. Improve (corresponds to the third objective).

[0029] Since the semiconductor element storage containers of the first to third configurations of the present invention each specify the container portion that accommodates the semiconductor element of the semiconductor device of the first to third configurations, It can be used in semiconductor devices having the first to third configurations described above (corresponding to the fourth purpose).

Furthermore, the method of manufacturing a semiconductor device having the first to fourth configurations of the present invention can achieve the fifth object.

First, in the first method, a heat radiation block is inserted into a window hole of an insulating frame, and a semiconductor element is fixed onto the heat radiation block. On the other hand, in the second method, a combination structure of an insulating frame and a heat dissipation block is obtained, and then a semiconductor element is fixed on the heat dissipation block. There is no difference in the fact that a semiconductor device can be obtained.

In the third method, a heat dissipation block is inserted into the window hole of the first insulating frame, a semiconductor element is fixed on the heat dissipation block, and then a second insulating frame is inserted into the first insulating frame. I'm trying to join the frame. In this way, a semiconductor device having the third configuration is obtained.

Furthermore, in the fourth method, a semiconductor device having the fourth configuration is obtained by adding a resin sealing step to the third method.

[0034]

【Example】

<A. Configuration of First Embodiment> FIG. 1 is a perspective view showing a semiconductor device SD1 as a first embodiment of the present invention, and FIG. 2 is a sectional view thereof. Further, FIG. 3 is a cross-sectional view showing the frame 10 used in the semiconductor device SD1, and FIG. 4 is a perspective view showing the heat dissipation block 20 similarly used in the semiconductor device SD1.

As shown in FIGS. 1 and 2, this semiconductor device SD1 includes a semiconductor element storage container SC and a semiconductor element 30 housed therein. Among these, the semiconductor element storage container SC consists of a ceramic frame 10 and members attached thereto.

The frame 10 has a downwardly recessed semiconductor element housing recess 11 formed on its upper surface side, and a rectangular block mounting hole (window hole) 12 formed in the bottom surface of the recess 11 that penetrates to the lower end. be done. Furthermore, lead attachment holes 13a are formed on both sides of the frame 10 from the top side to the bottom side of the frame 10, and the leads 13 are inserted into the lead attachment holes 13a. Furthermore, first electrodes (first conductive parts) connected to the upper ends of leads (third conductive parts) 13 are provided on both sides of the upper surface of the frame 10.
14, and signal input/output electrodes (second electrodes) 15 connected to the lower ends of the leads 13 are provided on both sides of the lower surface side of the frame 10 (second conductive portions).

On the other hand, the block mounting hole 12 of the frame 10
The heat dissipation block 20 fitted therein is a cubic block made of metal or alloy. This heat radiation block 20
may be a single block made of copper, for example, but as shown in FIG.
It may also be a composite block formed by joining together. Of these, the first block piece 21 is made of copper, for example, and the second block piece 22 is made of molybdenum. The second block piece 22 is joined to the upper surface of the first block piece 21 by solder.

The planar size of the heat dissipation block 20 matches the opening size of the block attachment hole 12. The heat dissipation block 20 is inserted into the block attachment hole 12 and fixed within the block attachment hole 12 with an adhesive. Further, in this installation, the height is adjusted so that the height of the lower surface 20a of the heat dissipation block 20 is the same as the height of the lower surface 15a of the signal input/output electrode 15. In other words, the lower surface 20a of the heat radiation block 20 and the lower surface 15a of the signal input/output electrode 15 are in a height relationship such that they belong to the same plane.

Furthermore, the semiconductor element 30 is fixed onto the heat radiation block 20 by die bonding using a bonding material 31 such as solder. The semiconductor element 30 includes a circuit element formed inside the semiconductor element 30 and an electrode part (not shown) formed on the upper surface side thereof. Furthermore, the semiconductor element 3
One end (first end) of a thin metal wire (conductive wire) 40 is connected to the electrode section 0, and the other end (second end) of the thin metal wire 40 is connected to the electrode 14. Thereby, the semiconductor element 30 and the electrode 14 are electrically connected.

FIG. 5 is a diagram showing a state in which this semiconductor device SD1 is mounted on a printed circuit board 50. The printed circuit board 50 has an insulating substrate 55 and a conductive pattern 51 thereon. This conductive pattern 51 is a pattern for inputting and outputting signals to and from the semiconductor device SD1, and is connected to other circuit components (not shown) on the printed circuit board 50.
It is connected to the. Further, on the substrate 55, a bonding pad 53 for mounting the semiconductor device SD1 is formed. This bonding pad 53 may be a rectangular conductive pattern formed at the same time as the conductive pattern 51, for example. This bonding pad 53 is an isolated pattern electrically insulated from circuit parts other than the semiconductor device SD1.

The signal input/output electrodes 15 of the frame 10 are connected to the conductive pattern 51 by a bonding material 52 . Further, the lower surface of the heat dissipation block 20 is fixed onto the bonding pad 53 by a bonding material 54. For example, solder is used as the bonding materials 51 and 52.

In this semiconductor device SD1, the semiconductor element 3
0 to the printed circuit board 50, the bonding material 31
, molybdenum plate 22, heat radiation block 20 and bonding material 5
There is a heat conduction path consisting of 4. Since the components of this heat conduction path are made of metal or alloy, the thermal conductivity of this heat conduction path is high. As a result, this heat conduction path acts as a radiation path for heat generated in the semiconductor element 30, and the heat radiation performance of the semiconductor element 30 is improved. Therefore, it is also possible to use semiconductor elements with a large amount of heat and high power.

Furthermore, in this embodiment, the heat dissipation block 2
The lower surface 20a of the frame 10 is connected to the signal input/output electrode 15 of the frame 10.
Since the height is the same as that of the lower surface 15a of the heat dissipation block 20, when the semiconductor device SD1 is mounted on the printed circuit board 50, the entire lower surface 20a of the heat dissipation block 20 is reliably covered with the printed circuit board 50.
come into contact with. Therefore, the heat transferred from the semiconductor element 30 to the heat radiation block 20 is efficiently released to the printed circuit board 50. Note that the configuration in which the height of the lower surface of the heat dissipation block is made substantially the same as the height of the lower surface of the signal input/output electrode is also applied to other embodiments described below.

Note that the bonding pad 5 of the printed circuit board 50
3 is electrically insulated from the conductive pattern 51 for signal transmission and other components, so that no electrical short circuit occurs between the semiconductor element 30 and the conductive pattern 51 or the like.

Furthermore, since the lower surface side of the semiconductor element 30 is often grounded, the semiconductor element 30 is connected to the heat dissipation block 20.
There is no harm caused by being electrically connected to the In particular, when the bonding pad 53 is connected to the ground potential level,
There is also the advantage that a grounding path via the heat dissipation block 20 can be secured.

<B. Manufacturing method of first embodiment> This semiconductor device SD1 is manufactured as follows.

First, as shown in FIG. 6, a ceramic frame 10 is created. The frame 10 has a recess 11, and a rectangular block attachment hole 12 is formed at the bottom of the recess 11. A lead attachment hole 13a is also formed.

Next, the lead 13 shown in FIG. 7 is inserted into the lead attachment hole 13a, and metal electrode plates 14 and 15 are installed at the ends of the upper and lower surfaces of the frame 10 and connected to the lead 13. This state corresponds to FIG. 3 described above. Note that a conductive lead structure D (conductive structure) is constituted by the lead 13, the first electrode 14, and the second electrode 15 shown in FIG.

Thereafter, as shown in FIG. 8, adhesive is applied to the side surface of the heat dissipation block 20 prepared in advance, and the heat dissipation block 20 is inserted into the block mounting hole 1 of the frame 10.
2 and let the adhesive harden. At this time, the height of the lower surface 20a of the heat radiation block 20 is equal to the lower surface 15 of the electrode plate 15.
Make sure that the height is the same as that of a. Note that the state shown in FIG. 8, that is, the frame 10 and the conductive lead structure D
and the semiconductor element storage container S by the heat dissipation block 20.
C1 is configured.

Next, as shown in FIG. 9, the bonding material 31
The semiconductor element 30 is fixed on the heat dissipation block 20 using the heat dissipation block 20. Finally, as shown in FIG. 2, the electrode portion of the semiconductor element 30 and the electrode 14 are connected by a thin metal wire 40 to obtain a semiconductor device SD1.

<B. Second Embodiment> FIG. 10 is a sectional view showing a semiconductor device SD2 which is a second embodiment of the present invention. As shown in the figure, this semiconductor device SD2 includes a semiconductor element storage container SC2, and the semiconductor element storage container SC2 includes a ceramic frame 60 having the same shape as the frame 10 in FIG. frame 60
A semiconductor element storage recess 61 is formed in the center of the semiconductor element storage recess 61, and a block attachment hole 62 is formed in the bottom surface of the semiconductor element storage recess 61.

Electrodes 64 and 65 attached to frame 60
Among them, the electrode 65 on the lower surface side of the frame 60 is similar to the electrode 14 in the first embodiment (FIG. 2), but the electrode 64 on the upper surface side of the frame 60 has a double key shape (Double K shape).
ink). This electrode 64 fits from the upper surface 60a of the frame 60 to the inner step surface 61a of the block mounting hole 62.

Of each part of the electrode 64, a part 64a existing on the upper surface 60a of the frame 60 is connected to the lead 63, and is connected to the inner step surface 6 of the block mounting hole 62.
The portion 64b existing above 1a and the electrode portion of the semiconductor element 80 are connected by a thin metal wire 90.

A heat dissipation block 70 is inserted and fixed in the block attachment hole 62 of the frame 60. This heat radiation block 70 is the heat radiation block 2 in the first embodiment.
0, but its thickness is set smaller than that of the heat dissipation block 20 of the first embodiment. That is, when the heat dissipation block 70 is fixed in the block attachment hole 62 so that the height of the lower surface 70a of the heat dissipation block 70 is the same as the lower surface 65a of the electrode 65,
The thickness of the heat radiation block 70 is determined such that the height of the upper surface 70b of the heat radiation block 70 is lower than the internal step surface 61a of the block attachment hole 62.

Further, a potting material 1 such as silicon resin or epoxy resin is placed in the semiconductor element storage recess 61.
05 is filled, and the potting material 105 (resin layer)
The semiconductor element 80 and the thin metal wire 90 are sealed. Portion 64b of electrode 64 is also sealed with potting material 105.

The other configurations are the same as those of the first embodiment.

Also in this semiconductor device SD2, since the semiconductor element 80 is mounted on the heat radiation block 70, the heat radiation performance of the semiconductor element 80 is improved.

Further, the thin metal wire 90 is accommodated in the semiconductor element storage recess 61, and the potting material 1 is placed in the recess 61.
05, the thin metal wire 90 and the semiconductor element 80 are sealed with the potting material 105, and the thin metal wire 90 and the semiconductor element 80 are sufficiently protected.

<D. Manufacturing method of second embodiment> In manufacturing this semiconductor device SD2, first, the structure shown in FIG. 11 is obtained by the same process as the semiconductor device SD1 of the first embodiment. That is, the heat dissipation block 70 is attached within the block attachment hole 62 of the frame 60. Next, after mounting the semiconductor element 80 on the heat dissipation block 70,
The electrode portion of the semiconductor element 80 and the electrode 64 are connected by a thin metal wire 90.

Thereafter, a curing agent is filled together with the potting material 105 into the semiconductor element storage recess 61, and they are heated and cured to obtain the semiconductor device SD2.

<E. Third embodiment and its manufacturing method>Figure 1
2 is a sectional view showing a semiconductor device SD3 according to a third embodiment of the present invention, and FIG. 13 is a perspective view showing a heat dissipation block 120 used in the semiconductor device SD3. As shown in both figures, a pair of ribs 120a are integrally formed on both side walls of a heat radiation block 120 of this semiconductor device so as to project laterally. Furthermore, a pair of grooves 112a that fit with the ribs 120a are formed in the inner wall portion of the block attachment hole 112 of the frame 110.

The rest of the structure is the same as that of the semiconductor device SD1 of the first embodiment.

In this semiconductor device SD3, the heat dissipation block 120 and the frame 110 are fixed by the rib 120a and the groove 1.
12a, it is possible to particularly effectively prevent a situation in which mutual displacement occurs between them or a situation in which they become separated from each other.

This semiconductor device SD3 is manufactured as follows.

That is, by disposing a ceramic material around the outer periphery of the heat dissipation block 120 on which the ribs 120a are formed and sintering the ceramic material, the heat dissipation block 120
A structure is obtained in which the ceramic frame 110 and the ceramic frame 110 are integrated. In the structure thus formed, a heat dissipation block 120 is present at the bottom of the semiconductor element storage recess 111. Further, lead attachment holes 113a penetrating from the upper surface to the lower surface of the frame 110 are formed on both sides of the frame 110.

Next, the lead 113 is inserted into the lead attachment hole 113a. Next, electrodes 114 are fixed to both sides of the upper surface of the frame 110 so as to be connected to the upper ends of the leads 113, and signal input/output electrodes 115 are fixed to both sides of the lower surface of the frame 110.
Connect to the bottom end of 3.

Next, the semiconductor element 130 is mounted on the heat dissipation block 120 in the semiconductor element storage recess 111 by die bonding. Finally, the electrode portion of the semiconductor element 130 and the electrode 114 are connected by the thin metal wire 140.

<F. Fourth embodiment and its manufacturing method>Figure 1
4 is a perspective view showing a semiconductor device SD4 according to a fourth embodiment of the present invention, and FIG. 15 is an exploded cross-sectional view of a main part of the semiconductor device SD4. As shown in both figures, this semiconductor device SD
The differences between the semiconductor device SD3 and the semiconductor device SD3 of the third embodiment are as follows.

That is, frame 1 of semiconductor device SD3
10 is made of ceramic, and the frame 160 of this semiconductor device SD4 is made of resin such as epoxy resin or glass epoxy resin. Also,
The frame 160 is made up of a pair of frame pieces 116a. The other configurations are similar to the semiconductor device SD3 of the third embodiment.

This semiconductor device SD4 has the advantage that a storage container SD4 similar to the semiconductor element storage container SC3 of the third embodiment can be obtained while using the resin frame 160 that cannot be integrated with the heat dissipation block 170 through the sintering process. .

In manufacturing this semiconductor device SD4, a pair of frame pieces 160a are prepared in advance. These frame pieces 160a have a shape that is the same as the frame 110 of FIG. 12 when connected to each other.

First, the leads 163 are inserted into the lead attachment holes 163a of each frame piece 160a, and the electrodes 164 and signal input/output electrodes 165 are connected to the leads 163.

On the other hand, the heat radiation block 170 has the same shape as the heat radiation block 120 shown in FIG. 13, and has a pair of ribs 1 that fit into the grooves 166 formed in each frame piece 160a.
20a is formed. And each frame piece 160
Apply adhesive to the opposite sides of a, and attach each frame piece 16.
The heat radiation block 170 is sandwiched between the pair of frame pieces 160a so that the rib 170a fits into the groove 166 of 0a. By curing the adhesive, the pair of frame pieces 160a become the frame 160, and the frame 160 and the heat radiation block 170 are integrated, thereby obtaining the semiconductor element storage container SC4.

Thereafter, the semiconductor element 180 is die-bonded and fixed on the heat dissipation block 170 in the semiconductor element storage recess 161, and then the electrode portion of the semiconductor element 180 and the electrode 164 are connected by a thin metal wire 190 to form the semiconductor device SD4. get.

<G. Fifth Embodiment> FIG. 16 is a sectional view showing a semiconductor device SD5 according to a fifth embodiment of the present invention, and FIG. 17 is a sectional view showing a first frame 210a used in the semiconductor device SD5.

As shown in both figures, the first frame 210a
is a rectangular ring member made of an insulating member, for example, a resin such as epoxy resin or glass epoxy resin, and has a rectangular block attachment hole (first window hole) 212 in the center. Furthermore, lead attachment holes 213a are formed on both sides of the first frame 210a, into which leads (third conductive portions) 213 are inserted.

[0077] On both sides of the first frame 210a, electrodes (first conductive part) 214 connected to leads (third conductive part) 213 and signal input/output electrodes (
A second electrically conductive portion) 215 is provided. The electrode 214 is
It extends to the peripheral edge of the block attachment hole 212.

Block attachment hole 2 of first frame 210a
A heat dissipation block 220 having the same shape and the same material as the heat dissipation block 70 in FIG. 10 is attached inside the heat dissipation block 12 with an adhesive.

A semiconductor element 230 is fixed onto the heat dissipation block 220 via a die bonding bonding material 231. The upper surface 230a of the semiconductor element 230 is approximately at the same height as the upper surface of the first frame 210a.

Further, the electrode 214 at the peripheral edge of the block attachment hole 212 and the electrode portion of the semiconductor element 230 are connected by a thin metal wire 240.

[0081] On the upper surface side of the first frame 210a, a first
A second frame 210b made of resin and made of the same material as the frame 210a is attached with an adhesive. This second frame 210b is formed in a rectangular ring shape,
The planar size of the frame hole (second window hole) 211 is larger than the planar size of the block attachment hole 212 of the first frame 210a. Further, a part of the electrode 214 is sandwiched between the first and second frames 210a and 210b. A frame 210 is configured by a combination of these first and second frames 210a and 210b, and frame 2
A recess 210s is defined by the inner wall surface of 10.

The recess 210s is filled with a potting material 255 such as silicon resin or epoxy resin, and the semiconductor element 230 and the thin metal wire 240 are sealed with the potting material 255.

Note that among the above-mentioned configurations, the first frame 210a, the second frame 210b, the leads 213, the electrodes 214, the signal input/output electrodes 215, and the heat dissipation block 2
20 constitutes a semiconductor element storage container SC5.

Since this semiconductor device SD5 has a configuration similar to that of the semiconductor device SD2 in FIG.
It has the same advantages as the above, but it also has other advantages such as ease of manufacture, as will be described later.

<H. Fifth Embodiment and Manufacturing Method>In manufacturing this semiconductor device SD5, first, FIG.
As shown, electrodes 214, 215 and leads 213
is attached to the first frame 210a.

Next, as shown in FIG. 18, the heat radiation block 22 is installed in the block attachment hole 212 of the first frame 210a.
Fix 0.

Furthermore, as shown in FIG. 19, the bonding material 23
1, the semiconductor element 230 is placed on the heat dissipation block 220 using
join. Continuing, as shown in FIG. 20, the electrode portion of the semiconductor element 230 and the electrode 214 of the first frame 210a
and are connected by a thin metal wire 240.

Thereafter, as shown in FIG. 21, the second frame 210b is attached onto the first frame 210a using adhesive. As a result, a recess 210s is formed, and the thin metal wire 240 and the semiconductor element 230 are accommodated therein.

Finally, as shown in FIG.
10s is filled with resin as a potting material 255, and the resin is heated and hardened to obtain a semiconductor device SD5.

[0090] In the first to fourth embodiments described above, it is necessary to prepare in advance an integral frame having a step in its central section. When resin is used as the material, it is troublesome to mold an integral frame with such steps. On the other hand, in this fifth embodiment, first and second rectangular ring-shaped frames 210a and 210b, which do not themselves have a step, are prepared, and by joining them, a frame 210 with a step is formed. Therefore, there is an advantage that manufacturing of the semiconductor device SD5 becomes easy.

[0091] Also, the semiconductor element 230 is placed in the second frame 2.
Since the thin metal wire 240 is connected before being surrounded by the second frame 210b, the connection work can be performed in a wide space without being restricted by the second frame 210b. Therefore, it is not necessary to connect the thin metal wires 90 in a narrow space within the semiconductor element housing recess 61, as in the semiconductor device SD2 shown in FIG. 10, for example.

<I. Sixth embodiment and its manufacturing method>Figure 22
is a sectional view showing a semiconductor device SD6 which is a sixth embodiment of the invention. As shown in the figure, this semiconductor device S
At D6, an electrode 263 in which three parts 263a to 263c are integrated is attached to the first frame 260a. The first portion 263a of this electrode 263 is connected to the first frame 2.
60a, and the second portion 263b is present on the outer surface 260s of the first frame 260a. Further, the third portion 263c is attached to the lower surface of the first frame 260a.

Note that the first frame 260a, the second frame 210b, the heat radiation block 220, and the electrode 263 constitute a semiconductor element storage container SC6.

In this semiconductor device SD6, the semiconductor element 23
The electrical connection between 0 and the printed circuit board (not shown) is the electrode 2.
63, there is no need to form a lead insertion hole in the first frame 260a for inserting the lead. Therefore, the semiconductor device SD6 can be manufactured relatively easily.

The other configuration is the semiconductor device SD in FIG.
5, the same parts are given the same reference numerals and the explanation thereof will be omitted. Further, the manufacturing procedure is also the same as that described in the fifth embodiment.

This semiconductor device SD6 is manufactured using the first frame 21 in the manufacturing process of the semiconductor device SD5 shown in FIG.
Using the first frame 260a instead of 0a, the electrode 2
14, 215 and the electrode 263 instead of the lead 213.
It can be manufactured by using

<J. Modification> In any of the above embodiments, the material of the frame is not limited, and various electrically insulating materials can be used. The illustrated ceramics and resins are representative examples.

[0098] Furthermore, the heat dissipation block in each example is as follows:
In general, it can be formed of a metal, an alloy, or a laminated structure thereof.

[0099]

Effects of the Invention In any of the semiconductor devices according to claims 1 to 4, the heat generated in the semiconductor element is radiated downward through the heat radiation block, so that the heat radiation performance is improved and the semiconductor element with high power can be used. can be used.

In particular, in the semiconductor device of claim 2, the height of the lower surface of the portion of the conductive structure fixed to the lower surface of the insulating frame is the same as the height of the lower surface of the heat dissipation block. The contact ability of the heat dissipation block to the substrate is increased, and the heat dissipation performance is further improved.

Furthermore, in the semiconductor device of the third aspect, since a combination frame is used in which the first and second insulating frames each having a window hole are superimposed, the first and second insulating frames By performing a wiring process between the semiconductor element and the conductive structure before bonding the semiconductor element and the conductive structure, the process can be performed within a relatively large space, which facilitates manufacturing.

Further, in the semiconductor device according to claim 4, the stepped window hole defined by the combination frame is filled with resin, and the upper surface of the semiconductor element and the conductive wire connected thereto are sealed with the resin. This further improves the ability to protect the conductive wire.

[0103] The semiconductor device storage containers according to claims 5 to 7 each specify the container portion that houses the semiconductor device of the semiconductor device according to claims 1 to 3, so that It can be used in the semiconductor device according to claim 3.

[0104] In the manufacturing method according to claims 8 to 11,
Since the manufacturing process of the above semiconductor device is specified,
The above semiconductor device can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the invention.

FIG. 2 is a cross-sectional view showing the semiconductor device of the first embodiment.

FIG. 3 is a sectional view showing a frame used in the semiconductor device of the first embodiment.

FIG. 4 is a perspective view showing a heat dissipation block used in the semiconductor device of the first embodiment.

FIG. 5 is a cross-sectional view showing the mounting state of the semiconductor device of the first embodiment.

FIG. 6 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the first embodiment.

FIG. 7 is a perspective view for explaining the method of manufacturing the semiconductor device of the first embodiment.

FIG. 8 is a cross-sectional view for explaining the method for manufacturing the semiconductor device of the first embodiment.

FIG. 9 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the first embodiment.

FIG. 10 is a sectional view showing a semiconductor device according to a second embodiment of the invention.

FIG. 11 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the second embodiment.

FIG. 12 is a sectional view showing a semiconductor device according to a third embodiment of the invention.

FIG. 13 is a perspective view showing a heat dissipation block used in the semiconductor device of the third embodiment.

FIG. 14 is a perspective view showing a semiconductor device according to a fourth embodiment of the invention.

FIG. 15 is an exploded sectional view showing essential parts of the semiconductor device of the fourth embodiment.

FIG. 16 is a sectional view showing a semiconductor device according to a fifth embodiment of the invention.

FIG. 17 is a sectional view showing a first frame used in the semiconductor device of the fifth embodiment.

FIG. 18 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the fifth embodiment.

FIG. 19 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the fifth embodiment.

FIG. 20 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the fifth embodiment.

FIG. 21 is a cross-sectional view for explaining the method of manufacturing the semiconductor device of the fifth embodiment.

FIG. 22 is a sectional view showing a semiconductor device according to a sixth embodiment of the invention.

FIG. 23 is a cross-sectional view showing a conventional semiconductor device.

[Explanation of symbols]

10, 60, 110 Frame 11, 61, 111, 161 Semiconductor element storage recess 12, 62, 212 Block mounting hole 13, 1
13,163,213,263 Lead 14,6
4,114,164,214,264 Electrode (first electrode) 15,115,165,215,264 Signal input/output electrode (second electrode) 20,70,120,170,220 Heat radiation block 30,80,130, 180, 230 Semiconductor element 40, 90, 140, 190, 240 Fine metal wire 210a, 260a First frame 210
b Second frame C Conductive lead structures SC1 to SC6 Semiconductor element storage containers SD1 to S
D6 Semiconductor device

Claims (11)

[Claims] 1. A semiconductor device comprising: (a) an insulating frame defining a recess depressed from above to below and a window hole penetrating in the vertical direction at the bottom of the recess; and (b) metal. and (c) a heat dissipation block made of at least one of the following: and an alloy, and inserted into the window hole and fixed to the insulating frame; (c) on the top surface of the insulating frame or the bottom surface of the recess. a conductive structure extending from a predetermined area to a lower surface of the insulating frame; (d) a semiconductor element mounted on the heat dissipation block; (e) a first end connected to the semiconductor element; a second end portion connected to the conductive structure in a region thereof, and a conductive line electrically connecting the semiconductor element and the conductive structure. 2. The semiconductor device according to claim 1, wherein the conductive structure includes (d-1) a first conductive structure fixed to the predetermined region;
(d-2) a second conductive part fixed to the lower surface of the insulating frame; and (d-3) a third conductive part connecting the second conductive part from the predetermined area. a lower surface of the heat radiation block is positioned at substantially the same height as a lower surface of the second conductive portion. 3. A semiconductor device comprising: (a) first and second insulating frames, that is, (a-1) a first insulating frame having a first window hole opened in the vertical direction; , (a-2) a second insulating frame that opens in the vertical direction and has a second window hole that is larger in size than the first window hole, and the first and second window holes are (b) a combination frame in which the second insulating frame is stacked and joined to the first insulating frame so as to communicate with each other to form a stepped window hole; and (b) metal and alloy. (c) a heat dissipation block made of at least one of the materials, inserted into the first window hole and fixed to the first insulating frame; and (c) a semiconductor mounted on the heat dissipation block. and (d) the first to third elements.
(d-1) a first conductive portion fixed on the step surface of the stepped window hole; and (d-2)
) a second conductive portion fixed to the lower surface of the first insulating frame; and (d-3) extending along the first insulating frame to connect the first and second conductive portions. (e) the conductive structure having a third conductive portion;
a first end connected to the semiconductor element;
a second end connected to a conductive portion of the semiconductor device, and a conductive line that electrically connects the semiconductor element and the conductive structure. 4. The semiconductor device according to claim 3, further comprising: (e) a resin layer filled in the stepped window hole and sealing the upper surface of the semiconductor element and the conductive wire. Semiconductor equipment. 5. A semiconductor device storage container that can be used to store semiconductor devices and mount them on a wiring board, the container comprising:
a) an insulating frame that defines a recess that is sunken downward from above and a window hole that penetrates in the vertical direction at the bottom of the recess, and (b) made of at least one of metal and alloy. a heat radiation block inserted into the window hole and fixed to the insulating frame;
c) A conductive structure extending from a predetermined area on the upper surface of the insulating frame or the bottom surface of the recess to the lower surface of the insulating frame. 6. The semiconductor device storage container according to claim 5, wherein the conductive structure includes (c-1) a first conductive portion fixed to the predetermined area; and (c-2) the first conductive portion of the insulating frame. a second conductive portion fixed to the lower surface;
3) a third conductive part that connects the predetermined position to the second conductive part, and the lower surface of the heat dissipation block is
A semiconductor device storage container positioned at substantially the same height as a lower surface of the second conductive portion. 7. A semiconductor element storage container that can be used when housing semiconductor elements and mounting them on a wiring board, the container comprising:
a) The first and second insulating frames, namely (a-
1) a first insulating frame having a first window hole that opens in the vertical direction, and (a-2) a second window hole that opens in the vertical direction and has a larger size than the first window hole. a second insulating frame having a second insulating frame, the second insulating frame having a second insulating frame having a second insulating property, such that the first and second window holes communicate with each other to form a stepped window hole. (b) a combination frame which is overlapped and joined to the frame;
(c) a heat dissipation block made of at least one of metal and alloy, inserted into the first window hole and fixed to the first insulating frame; A conductive part, i.e. (c-1) a first conductive part fixed on the step surface of the step-shaped window hole;
c-2) a second conductive portion fixed to the lower surface of the first insulating frame; and (c-3) a second conductive portion extending along the first insulating frame and connecting the first and second conductive portions. a third conductive portion connecting the portions;
A semiconductor device storage container comprising: 8. A method for manufacturing a semiconductor device, comprising: (a
) obtaining an insulating frame that defines a recess that is depressed from above to below and a window hole that penetrates in the vertical direction at the bottom of the recess; (b) the top surface of the insulating frame or the bottom surface of the recess; (c) attaching a conductive structure extending from a predetermined area on the insulating frame to the lower surface of the insulating frame; (c) attaching a heat dissipation block made of at least one of metal and alloy to the window hole; (d) attaching a semiconductor element onto the heat dissipation block; (e) extending a conductive wire between the semiconductor element and the predetermined area; A method for manufacturing a semiconductor device, comprising the step of electrically connecting the semiconductor element and the conductive structure. 9. A method for manufacturing a semiconductor device, comprising: (a
) an insulating frame that defines a recess that is sunken downward from above and a window hole that penetrates in the vertical direction at the bottom of the recess; A step of obtaining a combined structure with a heat dissipation block inserted and fixed in the hole,
b) attaching to the insulating frame a conductive structure extending from a predetermined area on the top surface of the insulating frame or the bottom surface of the recess to the bottom surface of the insulating frame;
c) inserting a heat dissipation block made of at least one of metal and alloy into the window hole and fixing it to the insulating frame; (d) attaching a semiconductor element onto the heat dissipation block. A method for manufacturing a semiconductor device, comprising: (e) electrically connecting the semiconductor element and the conductive structure by extending a conductive line between the semiconductor element and the predetermined region. . 10. A method for manufacturing a semiconductor device, comprising:
a) A first insulating frame having a first window hole that opens in the vertical direction; and a second insulating frame that opens in the vertical direction and has a second window hole that is larger in size than the first window hole. (b) first to third conductive parts, that is, the first conductive part fixed on the step surface of the step-like window hole; and the step of obtaining the first insulating frame. the conductive portion having a second conductive portion fixed to the lower surface of the frame; and a third conductive portion extending along the first insulating frame and connecting the first and second conductive portions. (c) inserting a heat dissipation block made of at least one of a metal and an alloy into the first window hole to attach the structure to the first insulating frame; a step of fixing it to an insulating frame; (d) a step of mounting a semiconductor element on the heat dissipation block; and (e)
a step of extending a conductive wire between the semiconductor element and the first conductive portion to electrically connect the semiconductor element and the conductive structure; (f) after the step (e)
The second insulating frame is connected to the first insulating frame so that the first and second window holes communicate with each other to form a stepped window hole.
A method for manufacturing a semiconductor device, comprising: stacking and bonding on an insulating frame. 11. The method of manufacturing a semiconductor device according to claim 10, further comprising: (g) filling an internal space of a combined frame obtained by joining the first and second insulating frames with a resin. A method for manufacturing a semiconductor device, comprising a step of curing the semiconductor device.